Terei ea SiC ceramic chuck
Litšobotsi tsa thepa:
1.Bothata bo phahameng: Bothata ba Mohs ba silicon carbide ke 9.2-9.5, bo latela daemane feela, bo na le khanyetso e matla ea ho tsofala.
2. Phepelo e phahameng ea mocheso: phepelo e phahameng ea mocheso ea silicon carbide e fihla ho 120-200 W/m·K, e ka qhalang mocheso kapele 'me e loketse tikoloho ea mocheso o phahameng.
3. Koefficient e tlase ea katoloso ea mocheso: koefficient ea katoloso ea mocheso ea silicon carbide e tlase (4.0-4.5×10⁻⁶/K), e ntse e ka boloka botsitso ba litekanyo mochesong o phahameng.
4. Botsitso ba lik'hemik'hale: silicon carbide acid le khanyetso ea alkali ea mafome, e loketseng ho sebelisoa tikolohong e senyang ea lik'hemik'hale.
5. Matla a maholo a mechini: silicon carbide e na le matla a holimo a kobehang le matla a ho hatella, 'me e ka mamella khatello e kholo ea mechini.
Likaroloana:
1. Indastering ea semiconductor, li-wafer tse tšesaane haholo li hloka ho beoa ka koping ea vacuum draining, vacuum draining e sebelisoa ho lokisa li-wafer, 'me ts'ebetso ea ho tlotsa ka wax, ho tšesa, ho tlotsa ka wax, ho hloekisa le ho seha e etsoa holim'a li-wafer.
2. Silicon carbide sucker e na le conductivity e ntle ea mocheso, e ka khutsufatsa nako ea ho tlotsa le ho tlotsa ka wax ka katleho, ea ntlafatsa katleho ea tlhahiso.
3. Silicon carbide vacuum sucker e boetse e na le khanyetso e ntle ea asiti le alkali.
4. Ha e bapisoa le poleiti ea setso ea ho jara corundum, e khutsufatsa nako ea ho kenya le ho jarolla le ho pholisa, e ntlafatsa katleho ea mosebetsi; Ka nako e ts'oanang, e ka fokotsa ho tsofala pakeng tsa lipoleiti tse ka holimo le tse ka tlase, ea boloka ho nepahala ha sefofane hantle, 'me ea eketsa bophelo ba tšebeletso ka hoo e ka bang 40%.
5. Karolo ea thepa e nyane, boima bo bobebe. Ho bonolo hore basebetsi ba jare liphalete, e leng se fokotsang kotsi ea tšenyo ea ho thulana e bakoang ke mathata a lipalangoang ka hoo e ka bang 20%.
6. Boholo: bophara bo boholo ba 640mm; Bophara: 3um kapa ka tlase ho moo
Tšimo ea kopo:
1. Tlhahiso ea semiconductor
●Ts'ebetso ea wafer:
Bakeng sa ho tiisa wafer ho photolithography, ho tjhesa, ho beha filimi e tšesaane le lits'ebetso tse ling, ho netefatsa ho nepahala ho hoholo le botsitso ba ts'ebetso. Mocheso oa eona o phahameng le ho hanyetsa mafome li loketse tikoloho e thata ea tlhahiso ea semiconductor.
●Khōlo ea Epitaxial:
Kholo ea SiC kapa GaN epitaxial, e le sesebelisoa sa ho futhumatsa le ho lokisa li-wafer, ho netefatsa hore mocheso o ts'oana le boleng ba kristale mochesong o phahameng, ho ntlafatsa ts'ebetso ea sesebelisoa.
2. Lisebelisoa tsa motlakase oa letsatsi
●Tlhahiso ea LED:
E sebelisoa ho lokisa substrate ea safire kapa SiC, le joalo ka sesebelisoa sa ho futhumatsa ts'ebetsong ea MOCVD, ho netefatsa ho lekana ha kholo ea epitaxial, ho ntlafatsa bokhoni le boleng ba khanya ea LED.
●Diode ea laser:
Jwalo ka sesebediswa se nepahetseng haholo, se lokisang le ho futhumatsa substrate ho netefatsa botsitso ba mocheso wa tshebetso, se ntlafatsa matla a tlhahiso le botshepehi ba diode ya laser.
3. Ho sebetsa ka ho nepahala
●Ts'ebetso ea likarolo tsa optical:
E sebelisetsoa ho lokisa likarolo tse nepahetseng tse kang lilense tsa mahlo le li-filter ho netefatsa ho nepahala ho hoholo le tšilafalo e tlase nakong ea ts'ebetso, 'me e loketse ho sebelisoa ha mechini e matla haholo.
●Ts'ebetso ea letsopa:
Jwalo ka sesebediswa se nang le botsitso bo phahameng, e loketse ho sebetsa ka nepo ho lokisa thepa ya letsopa ho netefatsa ho nepahala ha ho sebetsa le ho tsitsisa ha ho sebetsa tlasa mocheso o phahameng le tikoloho e senyang.
4. Liteko tsa saense
●Teko ea mocheso o phahameng:
Jwalo ka sesebediswa sa ho lokisa sampole dibakeng tse nang le mocheso o phahameng, se tshehetsa diteko tsa mocheso o feteletseng tse fetang 1600°C ho netefatsa hore mocheso o tshwana le botsitso ba sampole.
●Teko ea vacuum:
Jwalo ka sesebelisoa sa ho lokisa le ho futhumatsa sampole tikolohong ya vacuum, ho netefatsa ho nepahala le ho pheta-pheta ha teko, e loketse ho kwahela vacuum le kalafo ya mocheso.
Litlhaloso tsa tekheniki:
| (Thepa ea thepa) | (Yuniti) | (e bonolo) | |
| (Dikahare tsa SiC) |
| (Boima)% | >99 |
| (Boholo bo tloaelehileng ba lijo-thollo) |
| micron | 4-10 |
| (Botebo) |
| kg/dm3 | >3.14 |
| (Ho bonahala eka ho na le masoba a manyane) |
| Vo1% | <0.5 |
| (Bothata ba Vickers) | HV 0.5 | GPa | 28 |
| *( Matla a ho tenyetseha) | 20ºC | MPa | 450 |
| (Matla a khatello) | 20ºC | MPa | 3900 |
| (Modulus ea Elastic) | 20ºC | GPa | 420 |
| (Bothata ba ho robeha) |
| MPa/m'% | 3.5 |
| (Ho tsamaisa mocheso) | 20°ºC | Bophahamo/(m*K) | 160 |
| (Ho hanyetsa) | 20°ºC | Ohm.cm | 106-108 |
|
| a(RT**...80ºC) | K-1*10-6 | 4.3 |
|
|
| oºC | 1700 |
Ka lilemo tse ngata tsa ho bokellana ha tekheniki le boiphihlelo ba indasteri, XKH e khona ho etsa liparamente tsa bohlokoa tse kang boholo, mokhoa oa ho futhumatsa le moralo oa ho monya ha chuck ka vacuum ho latela litlhoko tse ikhethileng tsa moreki, ho netefatsa hore sehlahisoa se ikamahanya hantle le ts'ebetso ea moreki. Li-chuck tsa ceramic tsa SiC silicon carbide li fetohile likarolo tsa bohlokoa ts'ebetsong ea wafer, kholo ea epitaxial le lits'ebetso tse ling tsa bohlokoa ka lebaka la ho tsamaisa ha tsona mocheso hantle, botsitso ba mocheso o phahameng le botsitso ba lik'hemik'hale. Haholo-holo tlhahisong ea thepa ea semiconductor ea moloko oa boraro joalo ka SiC le GaN, tlhoko ea li-chuck tsa ceramic tsa silicon carbide e ntse e hola. Nakong e tlang, ka nts'etsopele e potlakileng ea 5G, likoloi tsa motlakase, bohlale ba maiketsetso le mahlale a mang, menyetla ea ts'ebeliso ea li-chuck tsa ceramic tsa silicon carbide indastering ea semiconductor e tla ba kholo.
Setšoantšo se qaqileng
