SiC Ceramic Tray ea Wafer Carrier e nang le khanyetso e phahameng ea mocheso

Tlhaloso e Khutšoanyane:

Silicon carbide (SiC) literei tsa ceramic li entsoe ka ultra-high-purity SiC powder (> 99.1%) sintered ho 2450 ° C, e nang le boima ba 3.10g/cm³, ho hanyetsa mocheso o phahameng ho fihlela ho 1800 ° C, le conductivity ea mocheso ea 250-m · 00. Ba ipabola lits'ebetsong tsa semiconductor MOCVD le ICP etching e le bajari ba li-wafer, ba eketsa katoloso e tlase ea mocheso (4×10⁻⁶/K) bakeng sa botsitso tlas'a mocheso o phahameng, ho felisa likotsi tsa tšoaetso tse teng ho bajari ba setso ba graphite. Li-diameter tse tloaelehileng li fihla ho 600mm, ka likhetho tsa ho huloa ka vacuum le li-grooves tse tloaelehileng. Ho sebetsa ka mokhoa o nepahetseng ho tiisa ho kheloha ha botenya <0.01mm, ho ntlafatsa ho tšoana ha filimi ea GaN le lihlahisoa tsa LED chip.


Likaroloana

Terei ea Ceramic ea Silicon Carbide (SiC Tray).

Karolo e phahameng ea ts'ebetso ea ceramic e thehiloeng holim'a thepa ea silicon carbide (SiC), e entsoeng bakeng sa lisebelisoa tse tsoetseng pele tsa indasteri tse kang tlhahiso ea semiconductor le tlhahiso ea LED. Mesebetsi ea eona ea mantlha e kenyelletsa ho sebetsa e le sejari sa liphaephe, sethala sa ts'ebetso ea etching, kapa ts'ehetso ea ts'ebetso ea mocheso o phahameng, ho fana ka ts'ebetso e ikhethang ea mocheso, ho hanyetsa mocheso o phahameng, le botsitso ba lik'hemik'hale ho netefatsa ts'ebetso e ts'oanang le lihlahisoa tsa lihlahisoa.

Lintlha tsa bohlokoa

1. Thermal Performance

  • High Thermal Conductivity​: 140–300 W/m·K, e fetang haholo graphite e tlwaelehileng (85 W/m·K), e thusang ho qhalana ha mocheso ka potlako le ho fokotsa kgatello ya mocheso.
  • Thermal Expansion Coefficient​: 4.0×10⁻⁶/℃ (25–1000℃), e bapisang silicon e haufi (2.6×10⁻⁶/℃), e fokotsang likotsi tsa ho senyeha ha mocheso.

2. Thepa ea Mechanical

  • Matla a Phahameng: Matla a Flexural ≥320 MPa (20 ℃), e hanyetsanang le khatello le tšusumetso.
  • Matla a Phahameng: Mohs hardness 9.5, ea bobeli ho daemane, e fanang ka khanyetso e phahameng ea ho apara.

3. Ho tsitsa ha lik'hemik'hale

  • Corrosion Resistance: E hanana le li-acid tse matla (mohlala, HF, H₂SO₄), e loketseng maemo a ts'ebetso ea etching.
  • Non-Magnetic​: Ts'oaetso ea makenete ea kahare <1×10⁻⁶ emu/g, ho qoba ho kena-kenana le lisebelisoa tse nepahetseng.

4. Mamello e Feteletseng ea Tikoloho

  • Ho tšoarella ha Mocheso o Phahameng: Mocheso oa nako e telele oa ts'ebetso ho fihlela ho 1600-1900 ℃; khanyetso ea nako e khuts'oane ho fihla ho 2200 ℃ (tikoloho e se nang oksijene).
  • Thermal Shock Resistance: E mamella liphetoho tsa tšohanyetso tsa mocheso (ΔT> 1000℃) ntle le ho phatloha.

https://www.xkh-semitech.com/sic-ceramic-tray-for-wafer-carrier-with-high-temperature-resistance%e2%80%8b%e2%80%8b-product/

Lisebelisoa

Sebaka sa Likopo

Specific Scenarios

Boleng ba Tekheniki

Tlhahiso ea Semiconductor

Wafer etching (ICP), tšesaane-filimi deposition (MOCVD), CMP polishing

Boima bo phahameng ba mocheso bo tiisa hore ho na le libaka tse tšoanang tsa mocheso; katoloso e tlase ea mocheso e fokotsa leqephe la wafer.

Tlhahiso ea LED

Khōlo ea Epitaxial (mohlala, GaN), li-wafer dicing, ho paka

E hatella mefokolo ea mefuta e mengata, e ntlafatsa ts'ebetso e khanyang ea LED le nako ea bophelo.

Indasteri ea Photovoltaic

Lisebelisoa tsa silicon wafer sintering, lisebelisoa tsa PECVD li tšehetsa

Mocheso o phahameng le ho hanyetsa mocheso oa mocheso o eketsa nako ea bophelo ba lisebelisoa.

Laser & Optics

Li-substrates tse futhumatsang tsa laser tse matla, li tšehetsa sistimi ea optical

Mocheso o phahameng oa mocheso o nolofalletsa ho senya mocheso ka potlako, ho tsitsisa likarolo tsa optical.

Lisebelisoa tsa Analytical

TGA/DSC ba nang le sampole

Mocheso o tlase le karabo e potlakileng ea mocheso li ntlafatsa ho lekanya ho nepahala.

Melemo ea Sehlahisoa

  1. Ts'ebetso e Felletseng: Ts'ebetso ea mocheso, matla, le ho hanyetsa kutu ho feta lirafshoa tsa alumina le silicon nitride, tse fihlelang litlhoko tse feteletseng tsa ts'ebetso.
  2. Moralo oa Boima bo Bobebe: Boima ba 3.1–3.2 g/cm³ (40% ea tšepe), e fokotsang boima ba 'mele le ho ntlafatsa ho nepahala ha motsamao.
  3. Nako e telele le ho ts'epahala: Bophelo ba ts'ebeletso bo feta lilemo tse 5 ho 1600 ℃, ho fokotsa nako ea ho theola le ho theola litšenyehelo tsa ts'ebetso ka 30%.
  4. Itokisetso: E ts'ehetsa li-geometri tse rarahaneng (mohlala, likomiki tse monyang tse nang le li-porous, li-tray tse nang le likarolo tse ngata) tse nang le phoso ea ho batalla <15 μm bakeng sa lits'ebetso tse nepahetseng.

Litlhaloso tsa Tekheniki

Sehlopha sa Parameter

Letšoao

Thepa ea 'Mele

Botenya

≥3.10 g/cm³

Flexural Strength (20℃)

320–410 MPa

Thermal Conductivity (20 ℃)

140–300 W/(m·K)

Mocheso oa Katoloso ea Mocheso (25–1000℃)

4.0×10⁻⁶/℃

Thepa ea lik'hemik'hale

Ho hanyetsa Acid (HF/H₂SO₄)

Ha ho kutu ka mor'a ho qoelisoa ka lihora tse 24

Machining Precision

Bophatlalatsi

≤15 μm (300×300 limilimithara)

Bokhopo ba Sefahleho (Ra)

≤0.4 μm

Litšebeletso tsa XKH

XKH e fana ka litharollo tse felletseng tsa indasteri tse mabapi le nts'etsopele ea moetlo, machining a nepahetseng, le taolo e matla ea boleng. Bakeng sa nts'etsopele ea moetlo, e fana ka tharollo ea lisebelisoa tsa bohloeki bo phahameng (> 99.999%) le porous (30-50% porosity), e kopantsoeng le mohlala oa 3D le papiso ho ntlafatsa li-geometri tse rarahaneng bakeng sa lits'ebetso tse kang li-semiconductors le sefofane. Ho sebetsa ka mokhoa o nepahetseng ho latela mokhoa o hlophisitsoeng: ho sebetsa ka phofo → ho hatella ka isostatic/dry → 2200°C sintering → CNC/diamond grinding → tlhahlobo, ho netefatsa hore nanometer-level polishing le ±0.01 mm dimensional mamello. Taolo ea boleng e kenyelletsa tlhahlobo ea ts'ebetso e felletseng (sebopeho sa XRD, sebopeho sa SEM, ho kobeha lintlha tse 3) le tšehetso ea tekheniki (ts'ebetso ea ts'ebetso, lipuisano tsa 24/7, tlhahiso ea sampole ea lihora tse 48), ho fana ka likarolo tse tšepahalang, tse sebetsang hantle bakeng sa litlhoko tse tsoetseng pele tsa indasteri.

https://www.xkh-semitech.com/sic-ceramic-tray-for-wafer-carrier-with-high-temperature-resistance%e2%80%8b%e2%80%8b-product/

Lipotso tse atisang ho botsoa (FAQ)

 1. Q: Ke liindasteri life tse sebelisang literei tsa silicon carbide ceramic?

A: E sebelisoa haholo tlhahisong ea li-semiconductor (ho sebetsana le li-wafer), matla a letsatsi (mekhoa ea PECVD), lisebelisoa tsa bongaka (likarolo tsa MRI), le sebaka sa sefofane (likarolo tse phahameng tsa mocheso) ka lebaka la ho hanyetsa mocheso o feteletseng le botsitso ba lik'hemik'hale.

2. P: Ke joang silicon carbide e fetang quartz/glass trays?

A: Ho hanyetsa mocheso o phahameng oa mocheso (ho fihla ho 1800 ° C vs. quartz's 1100 ° C), tšitiso ea zero magnetic, le nako e telele ea bophelo (lilemo tse 5+ khahlanong le likhoeli tse 6-12 tsa quartz).

3. P: Na literei tsa silicon carbide li khona ho sebetsana le maemo a asiti?

A: Ho joalo. E hanyetsana le HF, H2SO4, le NaOH ka <0.01mm corrosion/selemo, e li etsang hore e be tse loketseng bakeng sa ho hloekisa lik'hemik'hale le ho hloekisa liphaphatha.

4. P: Na literei tsa silicon carbide lia lumellana le boiketsetso?

A: Ho joalo. E etselitsoe ho phunya le ho ts'oara liroboto, e nang le bokaholimo bo bataletseng <0.01mm ho thibela tšilafalo ea likaroloana maselang a ikemetseng.

5. P: Papiso ea litšenyehelo ke bokae ha e bapisoa le thepa ea setso?

A: Theko e phahameng ea pele (3-5x quartz) empa TCO e tlase ho 30-50% ka lebaka la nako e telele ea bophelo, nako e fokotsehileng, le ho baballa matla ho tsoa ho mocheso o phahameng oa mocheso.


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