SiC ceramic tray plate graphite e nang le CVD SiC coating bakeng sa lisebelisoa
Li-ceramics tsa silicon carbide ha li sebelisoe feela sethaleng se tšesaane sa ho beha filimi, joalo ka epitaxy kapa MOCVD, kapa ho sebetsa ka sephaphatha, ka pelong ea li-trays tsa carrier carrier bakeng sa MOCVD pele li tlas'a tikoloho ea deposition, 'me ka hona li hanyetsa haholo mocheso le corrosion.SiC-coated carriers e boetse e na le thepa e phahameng ea mocheso oa mocheso le thepa e ntle ea ho fana ka mocheso.
Lisebelisoa tse hloekileng tsa lik'hemik'hale tsa Mouoane oa Silicon Carbide (CVD SiC) bakeng sa mocheso o phahameng oa Metal Organic Chemical Vapor Deposition (MOCVD).
Lijana tse hloekileng tsa CVD SiC li phahame haholo ho lijari tse tloaelehileng tse sebelisoang ts'ebetsong ena, e leng graphite 'me e koahetsoe ka lera la CVD SiC. lijari tsena tse koahetsoeng ka graphite ha li khone ho mamella mocheso o phahameng (1100 ho isa ho 1200 likhato tsa Celsius) tse hlokahalang bakeng sa ho beoa ha GaN ea khanya e phahameng ea kajeno ea led e putsoa le e tšoeu. Lithempereichara tse phahameng li etsa hore ho be le masoba a manyenyane ao lik'hemik'hale li senyang graphite ka tlaase ho 'ona. Joale likaroloana tsa graphite lia fofa ebe li silafatsa GaN, e leng se etsang hore sejari se koahetsoeng se nkeloe sebaka.
CVD SiC e na le bohloeki ba 99.999% kapa ho feta mme e na le conductivity e phahameng ea mocheso le ho hanyetsa mocheso oa mocheso. Ka hona, e ka mamella mocheso o phahameng le maemo a thata a khanya e phahameng ea tlhahiso ea LED. Ke thepa e tiileng ea monolithic e fihlang ho tekano ea theoretical, e hlahisa likaroloana tse fokolang, 'me e bonts'a kutu e phahameng haholo le ho hanyetsa khoholeho. Boitsebiso bo ka fetola opacity le conductivity ntle le ho hlahisa litšila tsa tšepe. Li-wafer carriers hangata li bophara ba lisenthimithara tse 17 'me li ka tšoara liphaephe tse fihlang ho 40 2-4 inch.
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