SiC Epitaxial Wafer bakeng sa Lisebelisoa tsa Matla - 4H-SiC, mofuta oa N, Boikoetliso bo fokolang
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Selelekela
SiC Epitaxial Wafer e bohareng ba lisebelisoa tsa semiconductor tsa morao-rao tse sebetsang hantle haholo, haholo-holo tse etselitsoeng ts'ebetso ea matla a phahameng, maqhubu a phahameng le mocheso o phahameng. E khuts'oane bakeng sa Silicon Carbide Epitaxial Wafer, SiC Epitaxial Wafer e na le SiC epitaxial layer ea boleng bo holimo, e tšesaane e holisitsoeng holim'a substrate e ngata ea SiC. Tšebeliso ea theknoloji ea SiC Epitaxial Wafer e ntse e eketseha ka potlako likoloing tsa motlakase, li-grids tse bohlale, lisebelisoa tsa matla a tsosolositsoeng, le sebaka sa sefofane ka lebaka la thepa ea eona e phahameng ea 'mele le ea elektronike ha e bapisoa le liphaphatha tse tloaelehileng tsa silicon.
Melao-motheo ea Boqapi ea SiC Epitaxial Wafer
Ho theha SiC Epitaxial Wafer ho hloka ts'ebetso e laoloang haholo ea mouoane oa lik'hemik'hale (CVD). Epitaxial layer e atisa ho lengoa holim'a substrate ea monocrystalline SiC e sebelisa likhase tse kang silane (SiH₄), propane (C₃H₈), le hydrogen (H₂) mocheso o fetang 1500 ° C. Khōlo ena e phahameng ea mocheso oa epitaxial e tiisa ho lumellana ho babatsehang ha kristale le mefokolo e fokolang pakeng tsa epitaxial layer le substrate.
Tshebetso ena e kenyelletsa mekhahlelo e mengata ea bohlokoa:
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Tokiso ea Substrate: Sephaphatha sa SiC sa motheo sea hloekisoa le ho belisoa hore e be boreleli ba athomo.
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Khōlo ea CVD: Ka setsing se phahameng sa bohloeki, likhase li arabela ho beha lesela le le leng la kristale la SiC holim'a substrate.
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Taolo ea Doping: Doping ea mofuta oa N kapa P e hlahisoa nakong ea epitaxy ho finyella thepa ea motlakase e lakatsehang.
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Tlhahlobo le Metrology: Ho sebelisoa ha microscopy ea Optical, AFM, le X-ray diffraction ho netefatsa botenya ba lera, mahloriso a doping le bofokoli.
SiC Epitaxial Wafer e 'ngoe le e' ngoe e behiloe leihlo ka hloko ho boloka mamello e tiileng ka ho lekana ha botenya, ho bata ha bokaholimo le ho hanyetsa. Bokhoni ba ho hlophisa liparamente tsena hantle bo bohlokoa bakeng sa li-MOSFET tse matla a phahameng, li-Schottky diode le lisebelisoa tse ling tsa motlakase.
Tlhaloso
Paramethara | Tlhaloso |
Lihlopha | Saense ea Lisebelisoa, Li-substrates tse le 'ngoe tsa Crystal |
Polytype | 4H |
Doping | Mofuta oa N |
Diameter | 101 limilimithara |
Mamello ea Diameter | ± 5% |
Botenya | 0.35 limilimithara |
Botenya Mamello | ± 5% |
Bolelele ba Phatlalatso ba Pele | 22 mm (± 10%) |
TTV (Total Thickness Variation) | ≤10 µm |
Warp | ≤25µm |
FWHM | ≤30 Arc-sec |
Surface Finish | Rq ≤0.35 nm |
Lisebelisoa tsa SiC Epitaxial Wafer
Lihlahisoa tsa SiC Epitaxial Wafer li bohlokoa haholo makaleng a mangata:
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Likoloi tsa Motlakase (EVs): Lisebelisoa tse thehiloeng ho SiC Epitaxial Wafer li eketsa katleho ea matla le ho fokotsa boima ba 'mele.
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Matla a Tsosolositsoeng: E sebelisoa ka li-inverters bakeng sa lisebelisoa tsa matla a letsatsi le moea.
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Lisebelisoa tsa Matla a Liindasteri: E nolofalletsa ho feto-fetoha ha maemo a holimo, mocheso o phahameng ka tahlehelo e tlase.
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Sepakapaka le Tšireletso: E loketse tikoloho e thata e hlokang li-semiconductors tse matla.
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5G Base Stations: Likarolo tsa SiC Epitaxial Wafer li tšehetsa matla a phahameng a matla bakeng sa likopo tsa RF.
SiC Epitaxial Wafer e thusa meralo e kopaneng, ho fetoha ka potlako, le ts'ebetso e phahameng ea phetolo ea matla ha e bapisoa le li-wafers tsa silicon.
Melemo ea SiC Epitaxial Wafer
Theknoloji ea SiC Epitaxial Wafer e fana ka melemo ea bohlokoa:
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Motlakase o phahameng oa ho senya: E mamella voltages ho fihla ho makhetlo a 10 ho feta li-wafers tsa Si.
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Thermal Conductivity: SiC Epitaxial Wafer e tlosa mocheso ka potlako, e lumella lisebelisoa hore li sebetse ka mokhoa o pholileng le ka botšepehi haholoanyane.
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Ho Fetola Mabelo a Phahameng: Litahlehelo tse tlase tsa switching li nolofalletsa katleho e phahameng le miniaturization.
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Bandgap e pharaletseng: E netefatsa botsitso ho li-voltages tse phahameng le mocheso.
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Matla a Lintho: SiC ha e sebetse ka lik'hemik'hale 'me e matla ka mochini, e loketse lits'ebetso tse batloang haholo.
Melemo ena e etsa hore SiC Epitaxial Wafer e be thepa ea khetho bakeng sa moloko o latelang oa li-semiconductors.
FAQ: SiC Epitaxial Wafer
Q1: Phapano ke efe pakeng tsa sephaphatha sa SiC le SiC Epitaxial Wafer?
Sesepa sa SiC se bua ka substrate e ngata, ha SiC Epitaxial Wafer e kenyelletsa lesela le holisitsoeng ka ho khetheha le sebelisoang ho etsa lisebelisoa.
Q2: Ke botenya bofe bo fumanehang bakeng sa likarolo tsa SiC Epitaxial Wafer?
Likarolo tsa Epitaxial hangata li tloha ho li-micrometer tse seng kae ho ea ho tse fetang 100 μm, ho latela litlhoko tsa kopo.
Q3: Na SiC Epitaxial Wafer e loketse maemo a mocheso o phahameng?
E, SiC Epitaxial Wafer e ka sebetsa maemong a ka holimo ho 600 ° C, e feta silicon haholo.
Q4: Ke hobane'ng ha sekhahla sa bokooa se le bohlokoa ho SiC Epitaxial Wafer?
Bophahamo bo tlase bo ntlafatsa ts'ebetso le tlhahiso ea sesebelisoa, haholo bakeng sa lits'ebetso tsa motlakase o phahameng.
Q5: Na li-SiC Epitaxial Wafers tsa mofuta oa N le P li fumaneha ka bobeli?
E, mefuta ena ka bobeli e hlahisoa ho sebelisoa taolo e nepahetseng ea khase ea dopant nakong ea ts'ebetso ea epitaxial.
Q6: Ke mefuta efe ea liphaephe e tloaelehileng bakeng sa SiC Epitaxial Wafer?
Li-diameter tse tloaelehileng li kenyelletsa 2-inch, 4-inch, 6-inch, le lisenthimithara tse 8 tse ntseng li eketseha bakeng sa tlhahiso ea boleng bo phahameng.
Q7: SiC Epitaxial Wafer e ama litšenyehelo le katleho joang?
Le hoja qalong e ne e le theko e boima ho feta silicon, SiC Epitaxial Wafer e fokotsa boholo ba tsamaiso le tahlehelo ea matla, e ntlafatsa katleho ea litšenyehelo ka nako e telele.