SiC Ingot 4H mofuta oa Dia 4inch 6inch Thickness 5-10mm Research / Dummy Grade

SiC Ingot 4H mofuta Dia 4inch 6inch Thickness 5-10mm Patlisiso / Dummy Kereiti Featured Image

Tlhaloso e Khutšoanyane:

Silicon Carbide (SiC) e hlahile e le thepa ea bohlokoa lits'ebetsong tse tsoetseng pele tsa elektroniki le tsa optoelectronic ka lebaka la thepa ea eona e phahameng ea motlakase, e futhumatsang le ea mochini. Ingot ea 4H-SiC, e fumanehang ka bophara ba 4-inch le 6-inch ka botenya ba 5-10 mm, ke sehlahisoa sa motheo bakeng sa merero ea lipatlisiso le nts'etsopele kapa e le thepa ea dummy-grade. Ingot ena e etselitsoe ho fa bafuputsi le bahlahisi li-substrates tsa SiC tsa boleng bo holimo tse loketseng ho etsoa ha lisebelisoa tsa mohlala, lithuto tsa liteko, kapa mekhoa ea ho lekanya le ho etsa liteko. Ka sebopeho sa eona se ikhethang sa kristale sa hexagonal, ingot ea 4H-SiC e fana ka ts'ebeliso e pharaletseng ho lisebelisoa tsa elektroniki tsa matla, lisebelisoa tsa maqhubu a phahameng, le lits'ebetso tse hananang le radiation.

Re romelle lengolo-tsoibila

Lintlha tsa Sehlahisoa

Li-tag tsa Sehlahisoa

Thepa

1. Sebopeho sa Crystal le Boikarabelo
Polytype: 4H (sebopeho sa hexagonal)
Lattice Constants:
e = 3.073 Å
c = 10.053 Å
Boithuto: Ka tloaelo [0001] (C-plane), empa mekhoa e meng e kang [11\overline{2}0] (A-plane) le eona e teng ha u e kopa.

2. Litekanyo tsa 'Mele
Diameter:
Likhetho tse tloaelehileng: lisenthimithara tse 4 (100 mm) le lisenthimithara tse 6 (150 mm)
Botenya:
E fumaneha ka har'a 5-10 mm, e ka tloaeleha ho latela litlhoko tsa kopo.

3. Thepa ea Motlakase
Mofuta oa Doping: E fumaneha ka har'a intrinsic (semi-insulating), n-type (e entsoeng ka naetrojene), kapa mofuta oa p (o entsoeng ka aluminium kapa boron).

4. Thermal le Mechanical Thepa
Thermal Conductivity: 3.5-4.9 W/cm·K mocheso oa kamore, e nolofalletsang ho ntša mocheso o babatsehang.
Boima: Mohs tekanyo ea 9, e etsang SiC ea bobeli ho daemane ka thata.

Paramethara	Lintlha	Yuniti
Mokhoa oa Kholo	PVT (Sepalangoang sa 'Mele sa Mouoane)
Diameter	50.8 ± 0.5 / 76.2 ± 0.5 / 100.0 ± 0.5 / 150 ± 0.5	mm
Polytype	4H / 6H (50.8 mm), 4H (76.2 mm, 100.0 mm, 150 mm)
Boemo ba Bokaholimo	0.0˚ / 4.0˚ / 8.0˚ ± 0.5˚ (50.8 mm), 4.0˚ ± 0.5˚ (tse ling)	tekanyo
Mofuta	N-mofuta
Botenya	5-10 / 10-15 / >15	mm
Maemo a Motheo a Flat	(10-10) ± 5.0˚	tekanyo
Bolelele ba Phatlalatso ba Pele	15.9 ± 2.0 (50.8 mm), 22.0 ± 3.5 (76.2 mm), 32.5 ± 2.0 (100.0 mm), 47.5 ± 2.5 (150 mm)	mm
Boemo ba Bobeli ba Flat	90˚ CCW ho tloha ho ± 5.0˚	tekanyo
Bolelele ba Bokhabane ba Bobeli	8.0 ± 2.0 (50.8 mm), 11.2 ± 2.0 (76.2 mm), 18.0 ± 2.0 (100.0 limilimithara), Ha ho (150 mm)	mm
Kereiti	Patlisiso / Dummy

Lisebelisoa

1. Lipatlisiso le Ntlafatso

Ingot ea sehlopha sa lipatlisiso sa 4H-SiC e loketse lilaboratori tsa thuto le tsa indasteri tse shebaneng le nts'etsopele ea lisebelisoa tse thehiloeng ho SiC. Boleng ba eona bo phahameng ba kristale bo nolofalletsa liteko tse nepahetseng ho thepa ea SiC, joalo ka:
Lithuto tsa motsamao oa Carrier.
Litšobotsi tsa bofokoli le mekhoa ea ho fokotsa.
Ntlafatso ea mekhoa ea kholo ea epitaxial.

2. Dummy Substrate
Ingot ea boemo ba dummy e sebelisoa haholo litekong, ho lekanya, le lits'ebetsong tsa prototyping. Ke khetho e baballang litšenyehelo bakeng sa:
Tekanyo ea paramethara ea ts'ebetso ho Chemical Vapor Deposition (CVD) kapa Physical Vapor Deposition (PVD).
Ho lekola lits'ebetso tsa etching le polishing libakeng tsa tlhahiso.

3. Matla a Elektronike
Ka lebaka la sekhahla sa eona se sephara le phepelo e phahameng ea mocheso, 4H-SiC ke lejoe la sekhutlo la lisebelisoa tsa elektroniki tse kang:
Li-MOSFET tse matla haholo.
Schottky Barrier Diodes (SBDs).
Junction Field-Effect Transistors (JFETs).
Likopo li kenyelletsa li-inverter tsa koloi ea motlakase, li-solar inverters, le li-grids tse bohlale.

4. Lisebelisoa tse Phahameng ka ho Fetisisa
Ho tsamaea ha elektronike e phahameng le tahlehelo ea matla a tlase ho etsa hore e tšoanelehe bakeng sa:
Radio Frequency (RF) transistors.
Mekhoa ea puisano e se nang mohala, ho kenyeletsoa lisebelisoa tsa 5G.
Lisebelisoa tsa sefofane le ts'ireletso tse hlokang lisebelisoa tsa radar.

5. Mekhoa e hanyetsanang le mahlaseli
Khanyetso ea tlhaho ea 4H-SiC ho ts'enyo ea mahlaseli e etsa hore e be ea bohlokoa haholo libakeng tse thata tse kang:
Lisebelisoa tsa ho hlahloba sebaka.
Thepa ea ho shebella setsi sa matla a nyutlelie.
Lisebelisoa tsa elektronike tsa boemo ba sesole.

6. Emerging Technologies
Ha theknoloji ea SiC e ntse e tsoela pele, lits'ebetso tsa eona li ntse li tsoela pele ho hola ho ba likarolo tse kang:
Lipatlisiso tsa lifoto le quantum computing.
Nts'etsopele ea li-LED tse nang le matla a phahameng le li-sensor tsa UV.
Ho kopanngoa ho li-heterostructures tsa semiconductor tse pharaletseng-bandgap.
Melemo ea 4H-SiC Ingot
Bohloeki bo Phahameng: E entsoe ka tlas'a maemo a thata ho fokotsa litšila le sekoli.
Scalability: E fumaneha ka bophara ba 4-inch le 6-inch ho tšehetsa litlhoko tse tloaelehileng tsa indasteri le tsa lipatlisiso.
Ho feto-fetoha ha maemo: Ho ikamahanya le mefuta e fapaneng ea li-doping le litloaelo ho fihlela litlhoko tse ikhethang tsa kopo.
Ts'ebetso e Matla: Ho ba le botsitso bo phahameng ba mocheso le mochini tlas'a maemo a feteletseng a ts'ebetso.

Qetello

Ingot ea 4H-SiC, e nang le thepa ea eona e ikhethang le lits'ebetso tse fapaneng tse fapaneng, e eme ka pele ho boqapi ba thepa bakeng sa lisebelisoa tsa elektronike tsa moloko o latelang le li-optoelectronics. Ebang e sebelisoa bakeng sa lipatlisiso tsa thuto, prototyping ea indasteri, kapa tlhahiso ea lisebelisoa tse tsoetseng pele, li-ingots tsena li fana ka sethala se tšepahalang sa ho sutumelletsa meeli ea theknoloji. Ka litekanyo tse ikhethileng, li-doping, le litloaelo, ingot ea 4H-SiC e etselitsoe ho fihlela litlhoko tse tsoelang pele tsa indasteri ea semiconductor.
Haeba u thahasella ho ithuta ho eketsehileng kapa ho etsa odara, ka kopo ikutloe u lokolohile ho ikopanya le lintlha tse qaqileng le therisano ea botekgeniki.