Sebōpi sa Khōlo sa SiC Ingot bakeng sa Mekhoa e Meholo ea SiC Crystal TSSG/LPE

Sebōpi sa Khōlo sa SiC Ingot bakeng sa Sebōpi se Seholo sa SiC Crystal TSSG/LPE Mekhoa e Hlahetsoeng

Tlhaloso e Khutšoanyane:

XKH's liquid-phase silicon carbide ingot kholo sebōpi se sebelisa theknoloji ea TSSG (Top-Seeded Solution Growth) le LPE (Liquid Phase Epitaxy), e etselitsoeng ka ho khetheha bakeng sa khōlo ea kristale e le 'ngoe ea SiC. Mokhoa oa TSSG o thusa ho hola ha li-ingots tse 4-8 inch tse kholo-diameter 4H / 6H-SiC ka lebelo le nepahetseng la mocheso le taolo ea lebelo la ho phahamisa peo, ha mokhoa oa LPE o thusa kholo e laoloang ea likarolo tsa SiC epitaxial ka mocheso o tlase, haholo-holo tse loketseng likarolo tsa ultra-low defect thick epitaxial. Sistimi ena ea khōlo ea mokelikeli oa silicon carbide ingot e sebelisitsoe ka katleho tlhahisong ea indasteri ea likristale tse fapaneng tsa SiC ho kenyelletsa mofuta oa 4H / 6H-N le mofuta oa insulating oa 4H / 6H-SEMI, o fanang ka tharollo e felletseng ho tloha lisebelisoa ho isa lits'ebetsong.

Re romelle lengolo-tsoibila

Likaroloana

Molao-motheo oa ho Sebetsa

Molao-motheo oa kholo ea silicon carbide ingot o kenyelletsa ho qhaqha lisebelisoa tse tala tsa SiC tse hloekileng ka tšepe e qhibilihisitsoeng (mohlala, Si, Cr) ho 1800-2100 ° C ho etsa tharollo e tletseng, e lateloang ke kholo e laoloang ea likristale tse le 'ngoe tsa SiC holim'a likristale tsa peo ka mokhoa o nepahetseng oa ho fokotsa mocheso le ho fokotsa mocheso. Theknoloji ena e loketse ka ho khetheha bakeng sa ho hlahisa bohloeki bo phahameng (> 99.9995%) 4H / 6H-SiC e le 'ngoe ea likristale tse nang le bokooa bo tlaase (<100/cm²), e finyellang litlhoko tse thata tsa substrate bakeng sa lisebelisoa tsa motlakase le lisebelisoa tsa RF. Sistimi ea kholo ea karolo ea mokelikeli e etsa hore ho be le taolo e nepahetseng ea mofuta oa kristale (mofuta oa N / P) le ho hanyetsa ka mokhoa o ntlafalitsoeng oa tharollo le mekhahlelo ea kholo.

Likaroloana tsa mantlha

1. Sistimi e Khethehileng ea Crucible: High-purity graphite / tantalum composite crucible, ho hanyetsa mocheso> 2200 ° C, e hanyetsanang le SiC e qhibilihisang kutu.

2. Multi-zone Heating System: Ho kopanya ho hanyetsa / ho futhumala ha mocheso ka mokhoa o nepahetseng oa ho laola mocheso oa ± 0.5 ° C (1800-2100 ° C range).

3. Precision Motion System: Ho laola ka makhetlo a mabeli a koetsoeng bakeng sa ho potoloha ha peo (0-50rpm) le ho phahamisa (0.1-10mm / h).

4. Setsi sa Taolo ea Sepakapaka: Tšireletso e phahameng ea argon / nitrogen, khatello ea ho sebetsa e feto-fetohang (0.1-1atm).

5. Sistimi e Bohlale ea Taolo: PLC + indasteri ea taolo e sa sebetseng ea PC e nang le tlhaiso-leseling ea kholo ea nako ea nnete.

6. Mokhoa o pholileng oa ho Pholisa: Moralo oa ho pholile oa metsi o hlophisitsoeng o netefatsa ts'ebetso e tsitsitseng ea nako e telele.

TSSG vs. LPE Papiso

Litšobotsi	Mokhoa oa TSSG	Mokhoa oa LPE
Khōlo Temp	2000-2100°C	1500-1800°C
Sekhahla sa Khōlo	0.2-1mm/h	5-50μm/h
Boholo ba Crystal	lisenthimithara tse 4-8	50-500μm li-epi-layers
Kopo e ka Sehloohong	Tokiso ea substrate	Lisebelisoa tsa matla tsa epi-layers
Defect Density	<500/cm²	<100/cm²
Li-Polytypes tse loketseng	4H/6H-SiC	4H/3C-SiC

Lisebelisoa tsa Bohlokoa

1. Matla a Elektronike: 6-inch 4H-SiC substrates bakeng sa 1200V + MOSFETs / diode.

2. Lisebelisoa tsa RF tsa 5G: Li-substrates tsa Semi-insulating SiC bakeng sa li-PA tsa li-base station.

3. EV Applications: Ultra-thick (> 200μm) epi-layers bakeng sa likoloi-grade modules.

4. Li-Inverters tsa PV: Li-substrates tse fokolang tse fokolang tse nolofalletsang>99% ea ho fetola katleho.

Melemo ea Konokono

1. Bophahamo ba Theknoloji
1.1 Moralo o Kopantsoeng oa Mekhoa e Mengata
Sistimi ena ea kholo ea SiC ingot ea mohato oa mokelikeli e kopanya ka boqhetseke litheknoloji tsa kholo ea kristale ea TSSG le LPE. Sistimi ea TSSG e sebelisa kholo ea peo ea peo e holimo e nang le convection e nepahetseng ea ho qhibiliha le taolo ea mocheso oa mocheso (ΔT≤5℃/cm), e nolofalletsang kholo e tsitsitseng ea li-ingots tsa SiC tse bophara ba 4-8 inch tse nang le chai e le 'ngoe ea 15-20kg bakeng sa likristale tsa 6H / 4H-SiC. Sistimi ea LPE e sebelisa motsoako o ntlafalitsoeng oa solvent (Si-Cr alloy system) le taolo ea supersaturation (± 1%) ho holisa likarolo tsa boleng bo holimo tsa epitaxial tse nang le sekoli <100/cm² ka mocheso o batlang o le tlase (1500-1800 ℃).

1.2 Sistimi ea Taolo e Bohlale
E na le taolo e bohlale ea kholo ea 4th e nang le:
• Tlhokomelo ea li-spectral in-situ tse ngata (400-2500nm wavelength range)
• Ho lemoha boemo ba ho qhibiliha ho thehiloeng ka laser (± 0.01mm ho nepahala)
• Taolo e koetsoeng e nang le bophara ba CCD (<±1mm fluctuation)
• Kaonafatso ea kholo ea matla a AI (15% ea ho boloka matla)

2. Melemo ea Ts'ebetso ea Ts'ebetso
2.1 TSSG Method Core Strength
• Bokhoni ba boholo bo boholo: E ts'ehetsa kholo ea kristale e fihlang ho 8-inch ka > 99.5% ea bophara bo lekanang
• Khanya e phahameng ka ho fetesisa: Density deslocation <500/cm², micropipe density <5/cm²
• Doping uniform: <8% n-type resistivity variation (4-inch wafers)
• Sekhahla se ntlafalitsoeng sa kholo: E ka feto-fetoha 0.3-1.2mm/h, 3-5× ka potlako ho feta mekhoa ea mouoane

2.2 Mokhoa oa LPE Matla a Motheo
• Epitaxy e nang le sekoli e tlase haholo: Boima ba boemo ba Sehokelo <1×10¹¹cm⁻²·eV⁻¹
• Taolo e nepahetseng ea botenya: 50-500μm epi-layers e nang le <±2% phapang ea botenya
• Ho sebetsa hantle ha mocheso o tlase: 300-500 ℃ tlase ho feta mekhoa ea CVD
• Khōlo e rarahaneng ea sebopeho: E tšehetsa li-pn junctions, superlattices, joalo-joalo.

3. Melemo ea Phatlalatso ea Tlhahiso
3.1 Taolo ea Litšenyehelo
• 85% ea tšebeliso ea thepa e tala (ha e bapisoa le 60% e tloaelehileng)
• 40% e tlase ea tšebeliso ea matla (ha e bapisoa le HVPE)
• 90% ea ho sebetsa ha lisebelisoa (moralo oa modular o fokotsa nako ea ho theoha)

3.2 Tiisetso ea Boleng
• 6σ process control (CPK>1.67)
• Ho lemoha bofokoli ba Marang-rang (0.1μm resolution)
• Ts'ebetso e felletseng ea ts'ebetso ea data (2000+ liparamente tsa nako ea nnete)

3.3 Scalability
• E lumellana le 4H / 6H / 3C polytypes
• E ka ntlafatsoa ho isa ho 12-inch process modules
• E tšehetsa SiC/GaN hetero-integration

4. Melemo ea Kopo ea Indasteri
4.1 Lisebelisoa tsa Matla
• Li-substrates tse tlase-tlase (0.015-0.025Ω·cm) bakeng sa lisebelisoa tsa 1200-3300V
• Semi-insulating substrates (>10⁸Ω·cm) bakeng sa ditshebediso tsa RF

4.2 Litheknoloji tse Hlahang
• Puisano ea palo: Li-substrates tsa lerata tse tlase haholo (1/f lerata<-120dB)
• Tikoloho e feteletseng: Likristale tse hananang le mahlaseli (<5% ho senyeha ka mor'a 1×10¹⁶n/cm² mahlaseli)

Litšebeletso tsa XKH

1. Thepa e Khethiloeng: Litlhophiso tsa tsamaiso ea TSSG / LPE e hlophisitsoeng.
2. Koetliso ea Ts'ebetso: Mananeo a felletseng a koetliso ea tekheniki.
3. Ka mor'a-thekiso Tšehetso: 24/7 karabelo botekgeniki le tlhokomelo.
4. Litharollo tsa Turnkey: Tšebeletso e feletseng ho tloha ho kenya ho ea ho ts'ebetsong ea ho netefatsa.
5. Phepelo ea lintho tse bonahalang: 2-12 inch SiC substrates / epi-wafers fumaneha.

Melemo ea bohlokoa e kenyelletsa:
• Ho fihla ho 8-inch kgolo ea kristale bokhoni.
• Resistivity uniform <0.5%.
• Nako ea ho qetela ea lisebelisoa >95%.
• 24/7 tšehetso ea botekgeniki.