Sebōpi sa Kholo sa SiC Ingot bakeng sa Mekhoa ea SiC Crystal TSSG/LPE e Bophara bo Boholo

Sebōpi sa Kholo sa SiC Ingot bakeng sa Mekhoa e Meholo ea SiC Crystal TSSG/LPE Setšoantšo se Hlahisitsoeng

Tlhaloso e Khutšoanyane:

Sebōpi sa XKH sa ingot sa silicon carbide se nang le mokelikeli se sebelisa theknoloji e etellang pele lefatšeng ea TSSG (Top-Seeded Solution Growth) le LPE (Liquid Phase Epitaxy), e etselitsoeng ka ho khetheha kholo ea kristale ea SiC ea boleng bo holimo. Mokhoa oa TSSG o nolofalletsa kholo ea li-ingot tse kholo tsa 4H/6H-SiC tse bophara ba lisenthimithara tse 4-8 ka gradient e nepahetseng ea mocheso le taolo ea lebelo la ho phahamisa peo, ha mokhoa oa LPE o thusa kholo e laoloang ea li-layer tsa SiC epitaxial mochesong o tlase, haholo-holo e loketseng li-layer tse teteaneng tsa epitaxial tse nang le sekoli se tlase. Sistimi ena ea kholo ea li-ingot tsa silicon carbide e nang le mokelikeli e sebelisitsoe ka katleho tlhahisong ea indasteri ea likristale tse fapaneng tsa SiC ho kenyeletsoa mofuta oa 4H/6H-N le mofuta oa insulating oa 4H/6H-SEMI, e fanang ka litharollo tse felletseng ho tloha lisebelisoa ho ea lits'ebetsong.

Romella imeile ho rona

Likaroloana

Molao-motheo oa ho Sebetsa

Molao-motheo oa mantlha oa kholo ea ingot ea silicon carbide ea mokhahlelo oa metsi o kenyelletsa ho qhala thepa e tala ea SiC e hloekileng haholo ka har'a litšepe tse qhibilihisitsoeng (mohlala, Si, Cr) ka 1800-2100°C ho theha litharollo tse tletseng, tse lateloang ke kholo e laoloang ea likristale tse le 'ngoe tsa SiC holim'a likristale tsa peo ka gradient e nepahetseng ea mocheso le taolo ea supersaturation. Theknoloji ena e loketse haholo ho hlahisa likristale tse le 'ngoe tsa 4H/6H-SiC tse hloekileng haholo (>99.9995%) tse nang le density e tlase ea sekoli (<100/cm²), li fihlela litlhoko tse thata tsa substrate bakeng sa lisebelisoa tsa motlakase tsa motlakase le lisebelisoa tsa RF. Sistimi ea kholo ea mokhahlelo oa metsi e nolofalletsa taolo e nepahetseng ea mofuta oa conductivity ea kristale (mofuta oa N/P) le resistivity ka sebopeho se ntlafalitsoeng sa tharollo le liparamente tsa kholo.

Likarolo tsa Bohlokoa

1. Sistimi e Ikhethang ea ho Chesa ka Sebopi: Sebopi se kopantsoeng sa graphite/tantalum se hloekileng haholo, se hanyetsa mocheso >2200°C, se hanela ho bola ha SiC.

2. Sistimi ea ho Futhumatsa ea Libaka tse Ngata: Ho futhumatsa ho kopantsoeng ha khanyetso/induction ka ho nepahala ha taolo ea mocheso oa ± 0.5°C (sebaka sa 1800-2100°C).

3. Sistimi ea ho Tsamaea ka ho Nepahetseng: Taolo e habeli e koetsoeng bakeng sa ho potoloha peo (0-50rpm) le ho phahamisa (0.1-10mm/h).

4. Sistimi ea Taolo ea Sepakapaka: Tšireletso ea argon/naetrojene e hloekileng haholo, khatello ea ts'ebetso e ka fetoloang (0.1-1atm).

5. Sistimi ea Taolo e Bohlale: Taolo e sa hlokahaleng ea PLC + PC ea indasteri ka tlhokomelo ea sebopeho sa kholo ea nako ea sebele.

6. Sistimi e Sebetsang ea ho Pholisa: Moralo oa ho pholisa metsi o hlophisitsoeng ka lihlopha o netefatsa ts'ebetso e tsitsitseng ea nako e telele.

Papiso ea TSSG khahlanong le LPE

Litšobotsi	Mokhoa oa TSSG	Mokhoa oa LPE
Mocheso oa Kholo	2000-2100°C	1500-1800°C
Sekhahla sa Kgolo	0.2-1mm/h	5-50μm/h
Boholo ba kristale	Li-ingot tse bolelele ba lisenthimithara tse 4-8	50-500μm epi-layers
Kopo e ka Sehloohong	Tokisetso ea substrate	Li-epi-layers tsa sesebelisoa sa motlakase
Botenya bo Phethahetseng ba Sekoli	<500/cm²	<100/cm²
Mefuta e Loketseng ea Polytype	4H/6H-SiC	4H/3C-SiC

Litšebeliso tsa Bohlokoa

1. Matla a Elektroniki: Li-substrate tsa 4H-SiC tsa lisenthimithara tse 6 bakeng sa li-MOSFET/diode tsa 1200V+.

2. Lisebelisoa tsa 5G RF: Lisebelisoa tsa SiC tse thibelang mocheso ka mokhoa o itekanetseng bakeng sa li-PA tsa seteishene sa motheo.

3. Ditshebediso tsa EV: Di-epi-layers tse teteaneng haholo (>200μm) bakeng sa di-module tsa maemo a dikoloi.

4. Li-Inverter tsa PV: Li-substrate tse nang le sekoli se tlase tse nolofalletsang katleho ea phetoho ea >99%.

Melemo ea Bohlokoa

1. Bophahamo ba Theknoloji
1.1 Moralo o Kopantsoeng oa Mekhoa e Mengata
Sistimi ena ea kholo ea ingot ea SiC ea mokhahlelo oa metsi e kopanya ka boqapi mahlale a kholo a TSSG le LPE. Sistimi ea TSSG e sebelisa kholo ea tharollo e nang le peo e holimo ka taolo e nepahetseng ea ho qhibiliha le mocheso (ΔT≤5℃/cm), e nolofalletsang kholo e tsitsitseng ea li-ingot tsa SiC tse bophara ba lisenthimithara tse 4-8 tse nang le chai e le 'ngoe ea 15-20kg bakeng sa likristale tsa 6H/4H-SiC. Sistimi ea LPE e sebelisa motsoako o ntlafalitsoeng oa solvent (sistimi ea alloy ea Si-Cr) le taolo ea supersaturation (±1%) ho holisa likarolo tse teteaneng tsa epitaxial tsa boleng bo holimo tse nang le defect density <100/cm² mochesong o tlase haholo (1500-1800℃).

1.2 Sistimi ea Taolo e Bohlale
E hlomelitsoe ka taolo e bohlale ea kholo ea moloko oa bone e nang le:
• Tlhokomelo ea li-spectral tse ngata sebakeng se le seng (sebaka sa bolelele ba maqhubu a 400-2500nm)
• Ho lemoha boemo ba ho qhibiliha bo thehiloeng ho laser (± 0.01mm ho nepahala)
• Taolo ea bophara bo koetsoeng e thehiloeng ho CCD (<±1mm ho fetoha)
• Ntlafatso ea liparamente tsa kholo tse tsamaisoang ke AI (poloko ea matla ea 15%)

2. Melemo ea Tshebetso ea Ts'ebetso
2.1 Mokhoa oa TSSG Matla a Motheo
• Bokhoni ba boholo bo boholo: E tšehetsa kholo ea kristale ea lisenthimithara tse 8 ka ho lekana ha bophara ba >99.5%.
• Kristalini e phahameng ka ho fetisisa: Bongata ba ho falla <500/cm², bongata ba micropipe <5/cm²
• Ho tšoana ha doping: Phapang ea ho hanyetsa mofuta oa n e ka tlaase ho 8% (li-wafer tsa lisenthimithara tse 4)
• Sekhahla sa kgolo se ntlafaditsweng: E ka fetolwa 0.3-1.2mm/h, 3-5× ka potlako ho feta mekgwa ya mouoane-phase

2.2 Mokhoa oa LPE Matla a Motheo
• Epitaxy e nang le sekoli se tlase haholo: Bongata ba boemo ba sebopeho <1×10¹¹cm⁻²·eV⁻¹
• Taolo e nepahetseng ea botenya: 50-500μm epi-layers tse nang le phapang ea botenya ba <±2%.
• Bokgoni ba mocheso o tlase: 300-500℃ e tlase ho feta lits'ebetso tsa CVD
• Kgolo e rarahaneng ya sebopeho: E tshehetsa dikopano tsa pn, di-superlattice, jj.

3. Melemo ea ho Sebetsa ka Botlalo Tlhahisong
3.1 Taolo ea Litšenyehelo
• Tšebeliso ea thepa e tala ea 85% (ha e bapisoa le 60% ea setso)
• Tšebeliso ea matla e tlase ka 40% (ha e bapisoa le HVPE)
• 90% ea nako ea ho sebetsa ea lisebelisoa (moralo oa modular o fokotsa nako ea ho sebetsa)

3.2 Netefatso ea Boleng
• Taolo ea ts'ebetso ea 6σ (CPK>1.67)
• Ho lemoha sekoli inthaneteng (boikemisetso ba 0.1μm)
• Ho latela data ka botlalo (liparamente tse fetang 2000 tsa nako ea sebele)

3.3 Ho Kgona ho Kgolofala
• E lumellana le mefuta e fapaneng ea 4H/6H/3C
• E ka ntlafatsoa ho ba di-module tsa tshebetso tsa di-inch tse 12
• E tšehetsa ho kopanngoa ha SiC/GaN hetero

4. Melemo ea Kopo ea Indasteri
4.1 Lisebelisoa tsa Motlakase
• Lisebelisoa tse sa hanyetseng haholo (0.015-0.025Ω·cm) bakeng sa lisebelisoa tsa 1200-3300V
• Lisebelisoa tse sireletsang mocheso ka semi-insulation (>10⁸Ω·cm) bakeng sa lits'ebetso tsa RF

4.2 Mahlale a Hlahang
• Puisano ea Quantum: Lisebelisoa tsa lerata le tlase haholo (lerata la 1/f<-120dB)
• Libaka tse feteletseng: Likristale tse hanelang mahlaseli (<5% ea ho senyeha ha mahlaseli ka mor'a 1×10¹⁶n/cm²)

Litšebeletso tsa XKH

1. Lisebelisoa tse Ikhethileng: Litlhophiso tsa sistimi ea TSSG/LPE tse etselitsoeng uena.
2. Thupelo ea Ts'ebetso: Mananeo a felletseng a koetliso ea botekgeniki.
3. Tšehetso ea Kamora Thekiso: Karabelo ea botekgeniki le tlhokomelo ea 24/7.
4. Litharollo tsa Turnkey: Tšebeletso ea li-spectrum tse felletseng ho tloha ho kenyeng ho isa ho netefatsong ea ts'ebetso.
5. Phepelo ea thepa: Li-substrate tsa SiC tsa lisenthimithara tse 2-12/li-epi-wafer lia fumaneha.

Melemo ea bohlokoa e kenyelletsa:
• Bokhoni ba ho hola ha kristale bo fihlang ho lisenthimithara tse 8.
• Ho tšoana ha ho hanyetsa <0.5%.
• Nako ea ho sebetsa ha lisebelisoa >95%.
• Tšehetso ea tekheniki ea 24/7.