Sekoahelo sa SiC P-type 4H/6H-P 3C-N 4inch withe botenya ba 350um Kereiti ea tlhahiso Kereiti ea Dummy
Tafole ea liparamente tsa 4H/6H-P 3C-N substrate ea 4inch SiC
4 Silicone bophara ba lisenthimitharaKarolo e ka tlase ea Carbide (SiC) Tlhaloso
| Sehlopha | Tlhahiso ea MPD ha e eo Sehlopha (Z) Sehlopha) | Tlhahiso e Tloaelehileng Sehlopha (P) Sehlopha) | Sehlopha sa Mashano (D Sehlopha) | ||
| Bophara | 99.5 mm ~ 100.0 mm | ||||
| Botenya | 350 μm ± 25 μm | ||||
| Boikutlo ba Wafer | Mothati o sa sebetseng: 2.0°-4.0° ho ya ho [11]20] ± 0.5° bakeng sa 4H/6H-P, Omothapo oa n:〈111〉± 0.5° bakeng sa 3C-N | ||||
| Botebo ba Micropipe | 0 cm-2 | ||||
| Ho hanyetsa | mofuta oa p 4H/6H-P | ≤0.1 Ωꞏcm | ≤0.3 Ωꞏcm | ||
| mofuta oa n 3C-N | ≤0.8 mΩꞏcm | ≤1 m Ωꞏcm | |||
| Boikutlo ba Motheo bo bataletseng | 4H/6H-P | - {1010} ± 5.0° | |||
| 3C-N | - {110} ± 5.0° | ||||
| Bolelele ba Sephara ba Motheo | 32.5 mm ± 2.0 mm | ||||
| Bolelele ba Bobedi bo Sephara | 18.0 mm ± 2.0 mm | ||||
| Boikutlo bo Bobedi bo bataletseng | Silicon e shebile holimo: 90° CW. ho tloha Prime flat±5.0° | ||||
| Ho se kenyeletsoe ha Moeli | 3 mm | 6 mm | |||
| LTV/TTV/Seqha/Sekotwana | ≤2.5 μm/≤5 μm/≤15 μm/≤30 μm | ≤10 μm/≤15 μm/≤25 μm/≤40 μm | |||
| Ho ba le makukuno | Ra≤1 nm ea Poland | ||||
| CMP Ra≤0.2 nm | Ra≤0.5 nm | ||||
| Mapetso a Moeli ka Leseli le Matla a Phahameng | Ha ho letho | Bolelele bo bokellaneng ≤ 10 mm, bolelele bo le bong ≤2 mm | |||
| Lipoleiti tsa Hex ka Leseli le Phahameng la Matla | Sebaka se bokellaneng ≤0.05% | Sebaka se bokellaneng ≤0.1% | |||
| Libaka tsa Polytype ka Leseli le Matla a Phahameng | Ha ho letho | Sebaka se bokellaneng ≤3% | |||
| Ho kenyeletsoa ha Khabone e Bonahalang | Sebaka se bokellaneng ≤0.05% | Sebaka se bokellaneng ≤3% | |||
| Ho ngoatheloa ha bokaholimo ba Silicon ke Leseli le Matla a Phahameng | Ha ho letho | Bolelele bo bokellaneng ≤1 × bophara ba wafer | |||
| Li-chips tsa Edge tse Phahameng ka Matla a Phahameng | Ha ho letho le dumelletsweng bophara le botebo ba ≥0.2mm | 5 e lumelletsoe, ≤1 mm ka 'ngoe | |||
| Tšilafalo ea Bokaholimo ba Silicon ka Matla a Phahameng | Ha ho letho | ||||
| Sephutheloana | Cassette ea wafer e nang le li-wafer tse ngata kapa setshelo se le seng sa wafer | ||||
Lintlha:
※Meeli ea liphoso e sebetsa holim'a wafer eohle ntle le sebaka se ka thoko ho moeli. # Mengoapo e lokela ho hlahlojoa sefahlehong sa Si feela.
Substrate ea P-type 4H/6H-P 3C-N 4-inch SiC e nang le botenya ba 350 μm e sebelisoa haholo tlhahisong e tsoetseng pele ea lisebelisoa tsa elektroniki le tsa motlakase. Ka motlakase o motle oa ho tsamaisa mocheso, motlakase o phahameng oa ho senyeha, le ho hanyetsa ka matla tikolohong e feteletseng, substrate ena e loketse lisebelisoa tsa elektroniki tsa motlakase tse sebetsang hantle joalo ka li-switch tsa motlakase o phahameng, li-inverter le lisebelisoa tsa RF. Lisebelisoa tsa tlhahiso li sebelisoa tlhahisong e kholo, ho netefatsa ts'ebetso e tšepahalang le e nepahetseng ea lisebelisoa, e leng ea bohlokoa bakeng sa lisebelisoa tsa elektroniki tsa motlakase le lits'ebetso tsa maqhubu a phahameng. Ka lehlakoreng le leng, li-substrate tsa mofuta oa dummy li sebelisoa haholo bakeng sa ho lekanya ts'ebetso, liteko tsa lisebelisoa, le nts'etsopele ea prototype, ho thusa ho boloka taolo ea boleng le botsitso ba ts'ebetso tlhahisong ea semiconductor.
TlhalosoMelemo ea li-substrate tse kopaneng tsa mofuta oa N SiC e kenyelletsa
- Ho khanna ho Phahameng ha Thermal: Ho qhala mocheso ka katleho ho etsa hore substrate e be e loketseng bakeng sa lits'ebetso tsa mocheso o phahameng le matla a phahameng.
- Motlakase o Phahameng oa ho Aroha: E tšehetsa ts'ebetso ea motlakase o phahameng, e netefatsa ts'epo ea lisebelisoa tsa elektroniki tsa motlakase le lisebelisoa tsa RF.
- Ho Hanela Tikoloho e Bohloko: E tšoarella maemong a feteletseng joalo ka mocheso o phahameng le libaka tse senyang, e netefatsa ts'ebetso e tšoarellang nako e telele.
- Ho nepahala ha Tlhahiso-Kereiti: E netefatsa tshebetso ya boleng bo hodimo le e tshepahalang tlhahisong e kgolo, e loketse matla a tswetseng pele le ditshebediso tsa RF.
- Teko ea Sehlopha se sa Tšoaneng: E nolofalletsa ho lekanya ts'ebetso ka nepo, ho hlahloba lisebelisoa, le ho etsa mohlala ntle le ho beha li-wafer tsa boemo ba tlhahiso kotsing.
Ka kakaretso, substrate ea P-type 4H/6H-P 3C-N 4-inch SiC e nang le botenya ba 350 μm e fana ka melemo e meholo bakeng sa lits'ebetso tsa elektroniki tse sebetsang hantle. Ho khanna ha eona mocheso o phahameng le motlakase o senyehang ho etsa hore e be ntle bakeng sa libaka tse nang le matla a phahameng le mocheso o phahameng, ha ho hanyetsa ha eona maemo a thata ho netefatsa ho tšoarella le ho tšepahala. Substrate ea boemo ba tlhahiso e netefatsa ts'ebetso e nepahetseng le e tsitsitseng tlhahisong e kholo ea lisebelisoa tsa elektroniki tsa motlakase le lisebelisoa tsa RF. Ho sa le joalo, substrate ea boemo ba dummy e bohlokoa bakeng sa ho lekanya ts'ebetso, liteko tsa lisebelisoa, le prototyping, e tšehetsang taolo ea boleng le botsitso tlhahisong ea semiconductor. Likarolo tsena li etsa hore substrate tsa SiC li be le mekhoa e mengata haholo bakeng sa lits'ebetso tse tsoetseng pele.
Setšoantšo se qaqileng
