SiC substrate P-mofuta 4H/6H-P 3C-N 4inch e nang le botenya ba 350um Sehlopha sa Tlhahiso ea Dummy

SiC substrate P-mofuta 4H/6H-P 3C-N 4inch e botenya ba 350um Mophato oa Tlhahiso ea Dummy grade Featured Image

Tlhaloso e Khutšoanyane:

Mofuta oa P-mofuta oa 4H/6H-P 3C-N 4-inch SiC substrate, e nang le botenya ba 350 μm, ke lisebelisoa tsa semiconductor tse sebetsang hantle tse sebelisoang haholo tlhahisong ea lisebelisoa tsa elektroniki. E tsejoa ka mokhoa o ikhethang oa ho tsamaisa mocheso, matla a phahameng a ho senyeha, le ho hanyetsa mocheso o feteletseng le tikoloho e senyang, substrate ena e loketse lisebelisoa tsa motlakase oa motlakase. Substrate ea boemo ba tlhahiso e sebelisoa tlhahisong e kholo, ho netefatsa taolo e tiileng ea boleng le ts'epahalo e phahameng lisebelisoa tse tsoetseng pele tsa elektroniki. Ho sa le joalo, dummy-grade substrate e sebelisoa haholo bakeng sa ho lokisa bothata, ho lekanya lisebelisoa, le prototyping. Thepa e phahameng ea SiC e etsa hore e be khetho e babatsehang bakeng sa lisebelisoa tse sebetsang sebakeng sa mocheso o phahameng, o nang le matla a matla a matla le a maqhubu a phahameng, ho kenyeletsa lisebelisoa tsa matla le lisebelisoa tsa RF.

Re romelle lengolo-tsoibila

Lintlha tsa Sehlahisoa

Li-tag tsa Sehlahisoa

4inch SiC substrate P-mofuta 4H/6H-P 3C-N parameter tafole

4 silika bophara ba lisenthimitharaKarolo e nyenyane ea Carbide (SiC). Tlhaloso

Kereiti			Zero MPD Tlhahiso Kereiti (Z Kereiti)	Tlhahiso e Tloaelehileng Kereiti (P Kereiti)	Sehlopha sa Dummy (D Kereiti)
Diameter			99.5 limilimithara ~ 100.0 limilimithara
Botenya			350 μm ± 25 μm
Wafer Orientation			Ka thoko: 2.0°-4.0° ho leba [112(-)0] ± 0.5° bakeng sa 4H/6H-P, On axis:〈111〉± 0.5° bakeng sa 3C-N
Boima ba Micropipe			0cm-2
Ho hanyetsa	mofuta oa 4H/6H-P		≤0.1 Ωꞏcm		≤0.3 Ωꞏcm
	n-mofuta 3C-N		≤0.8 mΩꞏcm		≤1 m Ωꞏcm
Mokhoa oa mantlha oa Flat		4H/6H-P	- {1010} ± 5.0°
		3C-N	- {110} ± 5.0°
Bolelele ba Phatlalatso ba Pele			32.5 limilimithara ± 2.0 limilimithara
Bolelele ba Bokhabane ba Bobeli			18.0 limilimithara ± 2.0 limilimithara
Boemo ba Bobeli ba Flat			Sefahleho sa silicon holimo: 90° CW. ho tloha ho Prime flat±5.0°
Kenyelletso ea Edge			3 limilimithara		6 limilimithara
LTV/TTV/Bow /Warp			≤2.5 μm/≤5 μm/≤15 μm/≤30 μm		≤10 μm/≤15 μm/≤25 μm/≤40 μm
Boqhobane			Polish Ra≤1 nm
			CMP Ra≤0.2 nm		Ra≤0.5 nm
Edge Cracks By High Intensity Leseli			Ha ho letho		Bolelele bo akaretsang ≤ 10 mm, bolelele bo le bong≤2 mm
Hex Plates By High Intensity Light			Kakaretso ≤0.05%		Kakaretso ≤0.1%
Libaka tsa Polytype Ka Leseli le Matla a Phahameng			Ha ho letho		Kakaretso≤3%
Likakaretso tsa Carbon tse bonoang			Kakaretso ≤0.05%		Kakaretso ≤3%
Silicon Surface Scratches By High Intensity Light			Ha ho letho		Bolelele ba kakaretso≤1× bophara ba wafer
Edge Chips Phahameng ka ho Matla Leseli			Ha ho e lumelletsoeng ≥0.2mm bophara le botebo		5 e lumelletsoe, ≤1 mm ka 'ngoe
Tšilafalo ea Sefahleho sa Silicon Ka Matla a Phahameng			Ha ho letho
Sephutheloana			Multi-wafer Cassette kapa Single Wafer Container

Lintlha:

※ Meeli ea bofokoli e sebetsa sebakeng sohle sa wafer ntle le sebaka se ka thoko. # Mengoallo e lokela ho hlahlojoa ho Si face feela.

Mofuta oa P-mofuta oa 4H/6H-P 3C-N 4-inch SiC substrate e nang le botenya ba 350 μm e sebelisoa haholo tlhahisong e tsoetseng pele ea lisebelisoa tsa elektroniki le lisebelisoa tsa matla. Ka conductivity e ntle ea mocheso, matla a phahameng a ho senyeha, le khanyetso e matla ea tikoloho e feteletseng, substrate ena e loketse lisebelisoa tsa motlakase tse sebetsang hantle tse kang li-switches tse phahameng, li-inverters le lisebelisoa tsa RF. Li-substrates tsa boemo ba tlhahiso li sebelisoa tlhahisong e kholo, ho netefatsa ts'ebetso ea lisebelisoa tse tšepahalang, tse nepahetseng haholo, tse bohlokoa bakeng sa lisebelisoa tsa elektronike tsa matla le lisebelisoa tse phahameng tsa maqhubu. Ka lehlakoreng le leng, li-substrates tsa dummy-grade li sebelisoa haholo bakeng sa ho lekanya ts'ebetso, tlhahlobo ea lisebelisoa, le nts'etsopele ea prototype, ho thusa ho boloka taolo ea boleng le ts'ebetso e tsitsitseng tlhahisong ea semiconductor.

SpecificationMelemo ea N-mofuta oa SiC composite substrates e kenyeletsa

High Thermal Conductivity: Ho senya mocheso o sebetsang hantle ho etsa hore substrate e be e loketseng bakeng sa lisebelisoa tse phahameng tsa mocheso le matla a phahameng.
Motlakase o phahameng oa ho senya: E ts'ehetsa ts'ebetso ea matla a phahameng, ho netefatsa ho ts'epahala ho lisebelisoa tsa elektronike le lisebelisoa tsa RF.
Ho hanyetsana le Tikoloho e thata: E tšoarella maemong a feteletseng joalo ka mocheso o phahameng le tikoloho e senyang, e netefatsang ts'ebetso e tšoarellang nako e telele.
Tlhahiso-Kereiti Precision: E netefatsa ts'ebetso ea boleng bo holimo le e tšepahalang tlhahisong e kholo, e loketseng matla a tsoetseng pele le lits'ebetso tsa RF.
Dummy-Grade bakeng sa Tlhahlobo: E thusa ho lekanya ts'ebetso e nepahetseng, tlhahlobo ea lisebelisoa, le prototyping ntle le ho senya li-wafers tsa boemo ba tlhahiso.

Ka kakaretso, mofuta oa P-mofuta oa 4H/6H-P 3C-N 4-inch SiC substrate e nang le botenya ba 350 μm e fana ka melemo e mengata bakeng sa lisebelisoa tsa elektronike tse sebetsang hantle. Mocheso oa eona o phahameng oa mocheso le motlakase oa ho senya o etsa hore e be o loketseng bakeng sa libaka tse phahameng tsa matla le mocheso o phahameng, ha ho hanyetsa maemo a thata ho tiisa ho tšoarella le ho tšepahala. Substrate ea boemo ba tlhahiso e netefatsa ts'ebetso e nepahetseng le e tsitsitseng tlhahisong e kholo ea lisebelisoa tsa motlakase le lisebelisoa tsa RF. Ho sa le joalo, substrate ea boemo ba dummy e bohlokoa bakeng sa ho lekanya ts'ebetso, tlhahlobo ea lisebelisoa, le prototyping, e ts'ehetsang taolo ea boleng le botsitso tlhahisong ea semiconductor. Likarolo tsena li etsa hore li-substrates tsa SiC li fetohe haholo bakeng sa lits'ebetso tse tsoetseng pele.