SiC
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6 ka hare ho Silicon Carbide 4H-SiC Semi-Insulating Ingot, Sehlopha sa Dummy
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Mofuta oa SiC Ingot 4H Dia 4inch 6inch Botenya 5-10mm Patlisiso / Kereiti e sa hlakang
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Sic Substrate Silicon Carbide Wafer 4H-N Type High Hardness Resistance Corrosion Resistance Prime Grade Polishing
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2inch Silicon Carbide Wafer 6H-N Mofuta oa Prime Kereiti ea Patlisiso Kereiti ea Dummy Kereiti ea 330μm 430μm Botenya
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Sekoahelo sa silicon carbide sa 2inch 6H-N bophara bo bentšitsoeng ba mahlakore a mabeli 50.8mm kereiti ea lipatlisiso tsa tlhahiso
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Li-substrate tsa N-Type SiC Composite Dia6inch Monocrystaline ea boleng bo holimo le substrate ea boleng bo tlase
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Li-substrate tse kopantsoeng tsa SiC tse sa thibeleng mocheso ka halofo Dia2inch 4inch 6inch 8inch HPSI
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SiC ea Mofuta oa N ho Si Composite Substrates Dia6inch
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Karolo ea SiC ea Dia200mm 4H-N le HPSI Silicon carbide
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Substrate ea SiC ea lisenthimithara tse 3 ea tlhahiso Dia76.2mm 4H-N
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Karolo ea SiC ea sehlopha sa P le D Dia50mm 4H-N 2inch
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Mofuta oa SiC Ingot 4H-N Dummy grade 2inch 3inch 4inch 6inch botenya: ＞10mm