Mochini oa ho seha terata oa silicon carbide daemane 4/6/8/12 inch SiC ingot processing

Mochini oa ho seha terata ea silicon carbide daemane 4/6/8/12 inch SiC ingot processing Featured Image

Tlhaloso e Khutšoanyane:

Mochini oa ho seha terata ea Silicon carbide Diamond Wire ke mofuta oa lisebelisoa tsa ho sebetsana le silicon carbide (SiC) ingot slice, o sebelisang theknoloji ea Diamond Wire Saw, ka terata ea daemane e tsamaeang ka lebelo le phahameng (bophara ba mola oa 0.1 ~ 0.3mm) ho ea ho SiC ingot multi-wire cutting, ho fihlela tokisetso ea wafer e nepahetseng haholo, e se nang tšenyo e kholo. Lisebelisoa li sebelisoa haholo ho SiC power semiconductor (MOSFET/SBD), sesebelisoa sa maqhubu a seea-le-moea (GaN-on-SiC) le ts'ebetso ea substrate ea sesebelisoa sa optoelectronic, ke sesebelisoa sa bohlokoa ketane ea indasteri ea SiC.

Romella imeile ho rona

Likaroloana

Molao-motheo oa ho sebetsa:

1. Ho lokisa Ingot: Ingot ea SiC (4H/6H-SiC) e tsitsitsoe sethaleng sa ho seha ka har'a sesebelisoa ho netefatsa ho nepahala ha sebaka (± 0.02mm).

2. Motsamao wa mola wa taemane: mola wa taemane (dikarolwana tsa taemane tse nang le motlakase hodima metsi) o kgannwa ke sistimi ya lebili le tataisang bakeng sa ho potoloha ka lebelo le phahameng (lebelo la mola 10 ~ 30m/s).

3. Seha dijo: ingot e fepuoa ho latela tsela e behiloeng, mme mola wa taemane o sehuwa ka nako e le nngwe le mela e mengata e bapileng (mela e 100 ~ 500) ho etsa di-wafer tse ngata.

4. Ho phodisa le ho tlosa ditshipi: Fafatsa sephodisa (metsi a se nang di-ion + di-additives) sebakeng sa ho seha ho fokotsa tshenyo ya mocheso le ho tlosa ditshipi.

Liparamente tsa bohlokoa:

1. Lebelo la ho seha: 0.2 ~ 1.0mm/min (ho latela tataiso ea kristale le botenya ba SiC).

2. Kgatelelo ya mola: 20~50N (mola o phahameng haholo ho bonolo ho o roba, o tlase haholo o ama ho nepahala ha ho seha).

3. Botenya ba wafer: standard 350~500μm, wafer e ka fihla ho 100μm.

Likarolo tse ka sehloohong:

(1) Ho nepahala ha ho seha
Ho mamella botenya: ± 5μm (@ 350μm wafer), e betere ho feta ho seha seretse se tloaelehileng (± 20μm).

Ho se tsitse ha bokaholimo: Ra<0.5μm (ha ho hlokahale ho sila ho eketsehileng ho fokotsa bongata ba ts'ebetso e latelang).

Leqephe la ho tjheseletsa: <10μm (fokotsa bothata ba ho bentsha ka morao ho moo).

(2) Bokgoni ba ho sebetsana le tshebetso
Ho seha ka mela e mengata: ho seha likotoana tse 100-500 ka nako, ho eketsa bokgoni ba tlhahiso ka makhetlo a 3-5 (ha ho bapisoa le ho seha ka mola o le mong).

Bophelo ba mola: Mohala oa taemane o ka seha 100 ~ 300km SiC (ho latela boima ba ingot le ntlafatso ea ts'ebetso).

(3) Ts'ebetso e tlase ea tšenyo
Ho robeha ha moedi: <15μm (ho seha ka mokhoa oa setso >50μm), ho ntlafatsa chai ea wafer.

Lera la tshenyo e ka tlase ho lefatshe: <5μm (fokotsa ho tloswa ha ho benya).

(4) Tšireletso ea tikoloho le moruo
Ha ho na tšilafalo ea seretse: Litšenyehelo tse fokotsehileng tsa ho lahla litšila ha li bapisoa le ho seha seretse.

Tšebeliso ea thepa: Ho seha tahlehelo <100μm/ seha, ho boloka thepa e tala ea SiC.

Phello ea ho itšeha:

1. Boleng ba wafer: ha ho na mapetso a maholo holim'a metsi, liphoso tse fokolang tse nyenyane haholo (katoloso e laoloang ea ho falla). E ka kena ka ho toba sehokelong sa ho bentša se bataletseng, ea khutsufatsa phallo ea ts'ebetso.

2. Ho tsitsa: botenya ba ho kheloha ha wafer ka har'a sehlopha ke <±3%, e loketse tlhahiso e iketsang.

3.Tšebeliso: Tšehetsa ho seha ha ingot ea 4H/6H-SiC, e lumellana le mofuta oa conductive/semi-insulated.

Tlhaloso ea Tekheniki:

Tlhaloso	Lintlha tse qaqileng
Litekanyo (L × W × H)	2500x2300x2500 kapa u iketsetse
Mefuta e fapaneng ea boholo ba thepa e sebelisoang	4, 6, 8, 10, 12 inches ea silicon carbide
Ho se tsitse ha bokaholimo	Ra≤0.3u
Lebelo le tloaelehileng la ho seha	0.3mm/motsotso
Boima ba 'mele	5.5t
Mehato ea ho beha mokhoa oa ho khaola	Mehato e ≤30
Lerata la lisebelisoa	≤80 dB
Tsitsipano ea terata ea tšepe	0~110N(khohlano ea terata ea 0.25 ke 45N)
Lebelo la terata ea tšepe	0~30m/S
Matla ohle	50kw
Bophara ba terata ea daemane	≥0.18mm
Qetello e bataletseng	≤0.05mm
Sekhahla sa ho seha le ho roba	≤1% (ntle le mabaka a batho, thepa ea silicon, mohala, tlhokomelo le mabaka a mang)

Litšebeletso tsa XKH:

XKH e fana ka ts'ebeletso eohle ea ts'ebetso ea mochini oa ho seha terata ea daemane oa silicon carbide, ho kenyeletsoa khetho ea lisebelisoa (ho bapisa bophara ba terata/lebelo la terata), nts'etsopele ea ts'ebetso (ntlafatso ea liparamente tsa ho seha), phepelo ea lisebelisoa (terata ea daemane, lebili la tataiso) le tšehetso ea kamora thekiso (tlhokomelo ea lisebelisoa, tlhahlobo ea boleng ba ho seha), ho thusa bareki ho fihlela chai e phahameng (>95%), tlhahiso ea boima ba SiC wafer e theko e tlase. E boetse e fana ka lintlafatso tse ikhethileng (joalo ka ho seha ho tšesaane haholo, ho kenya le ho jarolla ka boiketsetso) ka nako ea libeke tse 4-8.