Silicon carbide diamond terata mochini o sehang 4/6/8/12 inch SiC ingot process

Tlhaloso e Khutšoanyane:

Mochini oa ho itšeha oa Silicon carbide Diamond Wire ke mofuta oa lisebelisoa tsa ho sebetsa ka mokhoa o nepahetseng haholo tse inehetseng ho silicon carbide (SiC) selae sa ingot, se sebelisa theknoloji ea Diamond Wire Saw, ka terata ea daemane e tsamaeang ka lebelo le phahameng (le bophara ba mohala oa 0.1 ~ 0.3mm) ho ea ho SiC ingot ho itšeha ka lithapo tse ngata, ho fihlela boitokiso bo phahameng, bo senyehileng bo tlase. Thepa e sebelisoa haholo ho SiC power semiconductor (MOSFET/SBD), sesebelisoa sa maqhubu a seea-le-moea (GaN-on-SiC) le sesebelisoa sa substrate sa optoelectronic, ke sesebelisoa sa bohlokoa ho ketane ea indasteri ea SiC.

Re romelle lengolo-tsoibila

Lintlha tsa Sehlahisoa

Li-tag tsa Sehlahisoa

Molao-motheo oa tšebetso:

1. Ho lokisa li-ingot: SiC ingot (4H / 6H-SiC) e tsitsitse sethaleng sa ho itšeha ka mokhoa oa ho etsa bonnete ba hore boemo bo nepahetse (± 0.02mm).

2. Motsamao oa mohala oa daemane: mohala oa daemane (likaroloana tsa daemane tse entsoeng ka motlakase holim'a metsi) o tsamaisoa ke tsamaiso ea lebili la tataiso bakeng sa ho potoloha ka lebelo le phahameng (lebelo la line 10 ~ 30m / s).

3. Lijo tsa ho khaola: ingot e feptjoa ka tsela e behiloeng, 'me mohala oa daemane o khaola ka nako e le' ngoe le mela e mengata e tšoanang (100 ~ 500 lines) ho etsa li-wafers tse ngata.

4. Ho pholisa le ho tlosa chip: Fafatsa sepholi (metsi a hloekisitsoeng + li-additives) sebakeng sa ho itšeha ho fokotsa tšenyo ea mocheso le ho tlosa litsupa.

Lintlha tsa bohlokoa:

1. Lebelo la ho itšeha: 0.2 ~ 1.0mm / min (ho itšetlehile ka tataiso ea kristale le botenya ba SiC).

2. Khatello ea mohala: 20 ~ 50N (e phahameng haholo e bonolo ho senya mohala, e tlaase haholo e ama ho nepahala ho itšeha).

3.Wafer botenya: standard 350 ~ 500μm, sephaphatha ka fihla 100μm.

Lintlha tse ka sehloohong:

(1) Ho seha ho nepahala
Mamello ea botenya: ± 5μm (@350μm wafer), e molemo ho feta ho seha seretse se tloaelehileng (± 20μm).

Bokhopo ba sefahleho: Ra<0.5μm (ha ho na ho sila ho eketsehileng ho hlokahalang ho fokotsa palo ea ts'ebetso e latelang).

Warpage: <10μm (fokotsa bothata ba ho bentša ho latelang).

(2) Ts'ebetso e sebetsang hantle
Multi-line ho itšeha: ho itšeha 100 ~ 500 likotoana ka nako e le 'ngoe, ho eketsa bokhoni ba tlhahiso ka makhetlo a 3 ~ 5 (vs. Single line cut).

Bophelo ba mohala: Mohala oa daemane o ka khaola 100 ~ 300km SiC (ho ipapisitse le boima ba ingot le ts'ebetso ea ts'ebetso).

(3) Ts'ebetso ea tšenyo e tlase
Ho robeha ha moeli: <15μm (setso sa setso> 50μm), ntlafatsa tlhahiso ea sephaphatha.

Lera la tšenyo e ka tlas'a lefatše: <5μm (fokotsa ho tlosoa ha polishing).

(4) Tšireletso ea tikoloho le moruo
Ha ho tšilafalo ea seretse: Litsenyehelo tse fokotsehileng tsa ho lahla metsi a litšila ha li bapisoa le ho seha seretse.

Tšebeliso ea lintho tse bonahalang: Ho fokotsa tahlehelo <100μm/ sehahi, ho boloka thepa e tala ea SiC.

Phello ea ho fokotsa:

1. Boleng ba Wafer: ha ho na mapetsong a macroscopic holim'a metsi, likoli tse fokolang tse nyenyane (katoloso e laolehang ea dislocation). E ka kena ka ho toba sehokelong sa polishing, khutsufatsa phallo ea ts'ebetso.

2. Ho lumellana: ho kheloha ha botenya ba sephaphatha ka har'a batch ke <± 3%, e loketseng tlhahiso e ikemetseng.

3.Ho sebetsa: Tšehetsa 4H / 6H-SiC ingot ho itšeha, e lumellanang le mofuta oa conductive / semi-insulated.

Tlhaloso ea tekheniki:

Tlhaloso	Lintlha
Litekanyo (L × W × H)	2500x2300x2500 kapa u iketsetse
Mefuta ea boholo ba lisebelisoa	4, 6, 8, 10, 12 inches ea silicon carbide
Bokhoakhoa ba bokaholimo	Ra≤0.3u
Karolelano ea lebelo la ho itšeha	0.3mm/mots
Boima ba 'mele	5.5t
Mehato ea ho seha mokhoa oa ho seha	≤30 mehato
Lerata la lisebelisoa	≤80 dB
Khatello ea tšepe ea tšepe	0~110N(0.25 terata tsitsipano ke 45N)
Lebelo la terata ea tšepe	0~30m/S
Kakaretso ea matla	50kw
Diamond terata bophara	≥0.18mm
Qetella ho bata	≤0.05mm
Sekhahla sa ho khaola le ho senya	≤1% (ntle le mabaka a batho, thepa ea silicon, mohala, tlhokomelo le mabaka a mang)

Litšebeletso tsa XKH:

XKH e fana ka tshebetso eohle tšebeletso ea silicon carbide taemane terata ho itšeha mochine, ho akarelletsa le thepa khetha (terata bophara / terata lebelo matching), tshebetso ntshetsopele (seha paramethara optimization), consumables phepelo (taemane terata, tataiso lebili) le ka mor'a-thekiso tshehetso (lisebediswa tlhokomelo, ho itšeha boleng and analysis), ho thusa bareki ho finyella chai e ngata (> 95%), theko e tlaase SiC wafer boima tlhahiso. E boetse e fana ka lintlafatso tse ikhethileng (tse kang ho itšeha haholo, ho jarolla ka bohona le ho laolla) ka nako ea pele ea libeke tse 4-8.