Ho hanyetsa silicon carbide ka sebōpi se selelele sa kristale se holang 6/8/12inch inch SiC ingot kristale PVT mokhoa

Ho hanyetsa silicon carbide e telele ea kristale e holang 6/8/12inch inch SiC ingot kristale PVT mokhoa Setšoantšo se Hlahisitsoeng

Tlhaloso e Khutšoanyane:

Sebōpi sa khōlo sa khanyetso ea silicon carbide (mokhoa oa PVT, mokhoa oa phetisetso ea mouoane oa 'mele) ke sesebelisoa sa bohlokoa bakeng sa kholo ea kristale e le 'ngoe ea silicon carbide (SiC) ka molao-motheo oa sublimation-recrystallization oa mocheso o phahameng. Theknoloji ena e sebelisa ho futhumatsa ho hanyetsang ('mele oa ho futhumatsa oa graphite) ho sublimate thepa e tala ea SiC mochesong o phahameng oa 2000 ~ 2500℃, le ho e sebelisa hape sebakeng sa mocheso o tlase (kristale ea peo) ho theha kristale e le 'ngoe ea SiC ea boleng bo holimo (4H/6H-SiC). Mokhoa oa PVT ke ts'ebetso e kholo bakeng sa tlhahiso e kholo ea li-substrate tsa SiC tsa lisenthimithara tse 6 le ka tlase, e sebelisoang haholo ho lokiseng substrate ea li-semiconductor tsa matla (joalo ka li-MOSFET, SBD) le lisebelisoa tsa maqhubu a seea-le-moea (GaN-on-SiC).

Romella imeile ho rona

Likaroloana

Molao-motheo oa ho sebetsa:

1. Ho jara thepa e tala: phofo ea SiC e hloekileng haholo (kapa boloko) e behiloeng tlase ho graphite crucible (sebaka sa mocheso o phahameng).

2. Tikoloho ea vacuum/e sa sebetseng: ka vacuum cleaner kamoreng ea sebōpi (<10⁻³ mbar) kapa u fetise khase e sa sebetseng (Ar).

3. Sublimation ea mocheso o phahameng: ho futhumatsa ho hanyetsang ho fihlela ho 2000 ~ 2500℃, ho bola ha SiC ho ba Si, Si₂C, SiC₂ le likarolo tse ling tsa mokhahlelo oa khase.

4. Phetiso ea mokhahlelo oa khase: mokhahlelo oa mocheso o khanna ho hasana ha thepa ea mokhahlelo oa khase sebakeng sa mocheso o tlase (qetellong ea peo).

5. Kgolo ya kristale: Mokgahlelo wa kgase o boela o hlaha hodima bokahodimo ba kristale ya Peo mme o hola ka lehlakoreng le leng ho latela C-axis kapa A-axis.

Liparamente tsa bohlokoa:

1. Phapang ea mocheso: 20~50℃/cm (sekhahla sa kholo ea taolo le bongata ba sekoli).

2. Khatello: 1 ~ 100mbar (khatello e tlase ho fokotsa ho kenngoa ha litšila).

3. Sekhahla sa kgolo: 0.1 ~ 1mm/h (e amang boleng ba kristale le bokgoni ba tlhahiso).

Likarolo tse ka sehloohong:

(1) Boleng ba kristale
Botenya bo tlase ba sekoli: botenya ba microtubule <1 cm⁻², botenya ba dislocation 10³~10⁴ cm⁻² (ka ho ntlafatsa peo le taolo ya tshebetso).

Taolo ea mofuta oa polycrystalline: e ka hola ka 4H-SiC (e tloaelehileng), 6H-SiC, karolo ea 4H-SiC >90% (e hloka ho laola ka nepo gradient ea mocheso le karolelano ea stoichiometric ea karolo ea khase).

(2) Tshebetso ea lisebelisoa
Boiketlo bo phahameng ba mocheso: mocheso oa 'mele oa graphite o futhumatsang> 2500℃, 'mele oa sebōpi o amohela moralo oa ho thibela mocheso oa mekhahlelo e mengata (joalo ka graphite felt + baki e pholileng ka metsi).

Taolo ea ho tšoana: Ho feto-fetoha ha mocheso oa axial/radial oa ± 5 ° C ho netefatsa botsitso ba bophara ba kristale (ho kheloha ha botenya ba substrate ea lisenthimithara tse 6 <5%).

Tekanyo ea boiketsetso: Sistimi e kopaneng ea taolo ea PLC, ho beha leihlo mocheso ka nako ea sebele, khatello le sekhahla sa kholo.

(3) Melemo ea theknoloji
Tšebeliso e phahameng ea thepa: sekhahla sa phetoho ea thepa e tala >70% (ho molemo ho feta mokhoa oa CVD).

Ho lumellana ha boholo bo boholo: Tlhahiso ea boima ba lisenthimithara tse 6 e fihletsoe, lisenthimithara tse 8 li se li le mohatong oa nts'etsopele.

(4) Tšebeliso ea matla le litšenyehelo
Tšebeliso ea matla ea sebōpi se le seng ke 300~800kW·h, e leng se etsang 40%~60% ea litšenyehelo tsa tlhahiso ea substrate ea SiC.

Matsete a lisebelisoa a holimo (1.5M 3M ka yuniti), empa litšenyehelo tsa substrate ea yuniti li tlase ho feta mokhoa oa CVD.

Likopo tsa mantlha:

1. Lisebelisoa tsa motlakase: Substrate ea SiC MOSFET bakeng sa inverter ea koloi ea motlakase le inverter ea photovoltaic.

2. Disebediswa tsa Rf: Setsi sa motheo sa 5G GaN-on-SiC epitaxial substrate (haholo-holo 4H-SiC).

3. Lisebelisoa tsa tikoloho e feteletseng: li-sensor tsa mocheso o phahameng le khatello e phahameng bakeng sa lisebelisoa tsa lifofane le matla a nyutlelie.

Litekanyetso tsa tekheniki:

Tlhaloso	Lintlha tse qaqileng
Litekanyo (L × W × H)	2500 × 2400 × 3456 mm kapa o iketsetse
Bophara ba Sebopi	900 mm
Khatello ea ho Qetela ea ho Hloekisa	6 × 10⁻⁴ Pa (kamora hora e le 1.5 ea vacuum)
Sekhahla sa ho Dutla	≤5 Pa/12h (ho baka)
Bophara ba Shaft ea Potoloho	50 mm
Lebelo la ho Potoloha	0.5–5 rpm
Mokhoa oa ho Futhumatsa	Ho futhumatsa ho hanyetsa motlakase
Mocheso o phahameng ka ho fetisisa oa Sebōpi	2500°C
Matla a ho Futhumatsa	40 kW × 2 × 20 kW
Tekanyo ea mocheso	Pirometara ea infrared ea mebala e 'meli
Boemo ba Thempereichara	900–3000°C
Ho nepahala ha mocheso	±1°C
Khatello ea Maemo	1–700 mbar
Ho nepahala ha Taolo ea Khatello	1–10 mbar: ± 0.5% FS; 10–100 mbar: ± 0.5% FS; 100–700 mbar: ±0.5% FS
Mofuta oa Ts'ebetso	Likhetho tsa polokeho tse tlatsitsoeng, tse tsamaisoang ka letsoho/tse iketsang
Likarolo tse Ikhethelang	Tekanyo ea mocheso o habeli, libaka tse ngata tsa ho futhumatsa

Litšebeletso tsa XKH:

XKH e fana ka ts'ebeletso eohle ea ts'ebetso ea sebōpi sa SiC PVT, ho kenyeletsoa le ho iketsetsa lisebelisoa (moralo oa tšimo ea mocheso, taolo ea othomathiki), nts'etsopele ea ts'ebetso (taolo ea sebopeho sa kristale, ntlafatso ea sekoli), koetliso ea tekheniki (ts'ebetso le tlhokomelo) le ts'ehetso ea kamora thekiso (ho nkela likarolo tsa graphite sebaka, ho lekanya tšimo ea mocheso) ho thusa bareki ho fihlela tlhahiso ea boleng bo holimo ea boima ba kristale. Re boetse re fana ka lits'ebeletso tsa ntlafatso ea ts'ebetso ho ntlafatsa chai ea kristale le katleho ea kholo ka ho tsoelang pele, ka nako e tloaelehileng ea likhoeli tse 3-6.