Silicon carbide ho hanyetsa sebōpi se selelele sa kristale se holang 6/8/12inch SiC ingot crystal PVT mokhoa

Tlhaloso e Khutšoanyane:

Silicon carbide resistance growth sebōpi (mokhoa oa PVT, mokhoa oa phetiso ea mouoane oa 'mele) ke sesebelisoa sa bohlokoa bakeng sa kholo ea silicon carbide (SiC) kristale e le 'ngoe ka molao-motheo o phahameng oa sublimation-recrystallization. Theknoloji e sebelisa mocheso oa ho hanyetsa ('mele oa ho futhumatsa oa graphite) ho fokotsa thepa e tala ea SiC mocheso o phahameng oa 2000 ~ 2500 ℃, le ho tsosolosa sebakeng se tlaase sa mocheso (kristale ea peo) ho theha kristale e le 'ngoe ea boleng ba SiC (4H / 6H-SiC). Mokhoa oa PVT ke mokhoa o tloaelehileng oa tlhahiso ea boima ba li-substrates tsa SiC tsa lisenthimithara tse 6 ho ea tlase, tse sebelisoang haholo ho lokiseng substrate ea li-semiconductors tsa matla (tse kang MOSFETs, SBD) le lisebelisoa tsa maqhubu a seea-le-moea (GaN-on-SiC).

Re romelle lengolo-tsoibila

Lintlha tsa Sehlahisoa

Li-tag tsa Sehlahisoa

Molao-motheo oa tšebetso:

1. Lisebelisoa tse tala: bohloeki bo phahameng ba SiC phofo (kapa thibela) e behiloeng ka tlaase ho graphite crucible (sebaka se phahameng sa mocheso).

2. Tikoloho ya vacuum/inert: vacuum phaposi ya bobopi (<10⁻³ mbar) kapa fetisa khase e inelang (Ar).

3. Mocheso o phahameng oa mocheso: ho hanyetsa mocheso ho 2000 ~ 2500 ℃, ho senyeha ha SiC ho Si, Si₂C, SiC₂ le likarolo tse ling tsa khase ea khase.

4. Phatlalatso ea khase ea khase: mocheso oa mocheso o khanna ho ata ha thepa ea khase sebakeng se tlaase sa mocheso (peo ea peo).

5. Khōlo ea Crystal: Karolo ea khase e tsosolosa holim'a Crystal ea Peō 'me e hola ka tsela e lebisang lehlakoreng la C-axis kapa A-axis.

Lintlha tsa bohlokoa:

1. Mocheso oa mocheso: 20 ~ 50 ℃ / cm (taola sekhahla sa kholo le sekoli se nang le bokooa).

2. Khatello: 1 ~ 100mbar (khatello e tlaase ea ho fokotsa ho kenngoa ha litšila).

3.Sekhahla sa kholo: 0.1 ~ 1mm / h (e amang boleng ba kristale le katleho ea tlhahiso).

Lintlha tse ka sehloohong:

(1) Boleng ba kristale
Bophahamo bo tlase: boima ba microtubule <1 cm⁻², boholo ba sebaka sa ho kheloha 10³~10⁴ cm⁻² (ka ho ntlafatsa peo le taolo ea tšebetso).

Taolo ea mofuta oa Polycrystalline: e ka hōla 4H-SiC (ka sehloohong), 6H-SiC, 4H-SiC tekanyo> 90% (e hloka ho laola ka nepo mocheso oa mocheso le khase ea khase ea stoichiometric).

(2) Ts'ebetso ea lisebelisoa
Botsitso bo phahameng ba mocheso: mocheso oa 'mele oa graphite> 2500 ℃,' mele oa sebōpi o amohela moralo o nang le mekhahlelo e mengata (joalo ka baki ea graphite + e pholileng ka metsi).

Taolo e ts'oanang: Ho feto-fetoha ha mocheso oa axial / radial ea ± 5 ° C ho netefatsa hore bophara ba kristale bo sa fetohe (6-inch substrate thick deviation <5%).

Tekanyo ea boiketsetso: Sistimi e kopaneng ea taolo ea PLC, ho lekola mocheso oa nako ea nnete, khatello le sekhahla sa kholo.

(3) Melemo ea theknoloji
Tšebeliso e phahameng ea thepa: sekhahla sa phetoho ea thepa e tala> 70% (e molemo ho feta mokhoa oa CVD).

Khokahano e kholo ea boholo: tlhahiso ea boima ba 6-inch e fihletsoe, 8-inch e sethaleng sa nts'etsopele.

(4) Tšebeliso ea matla le litšenyehelo
Tšebeliso ea matla ea sebōpi se le seng ke 300 ~ 800kW · h, e leng karolo ea 40% ~ 60% ea litšenyehelo tsa tlhahiso ea SiC substrate.

Matsete a thepa a phahame (1.5M 3M ka yuniti), empa theko ea substrate ea unit e tlase ho feta mokhoa oa CVD.

Lisebelisoa tsa mantlha:

1. Lisebelisoa tsa motlakase: SiC MOSFET substrate bakeng sa inverter ea koloi ea motlakase le photovoltaic inverter.

2. Lisebelisoa tsa Rf: 5G setsi sa setsi sa GaN-on-SiC epitaxial substrate (haholo-holo 4H-SiC).

3. Lisebelisoa tsa tikoloho tse feteletseng: mocheso o phahameng le lisensara tsa khatello e phahameng bakeng sa sepakapaka le thepa ea matla a nyutlelie.

Litekanyetso tsa tekheniki:

Tlhaloso	Lintlha
Litekanyo (L × W × H)	2500 × 2400 × 3456 limilimithara kapa u iketsetse khetho
Crucible Diameter	900 limilimithara
Khatello e Feletseng ea Vacuum	6 × 10⁻⁴ Pa (kamora 1.5h ea vacuum)
Leakage Rate	≤5 Pa/12h (ho baka)
Rotation Shaft Diameter	50 limilimithara
Lebelo la ho potoloha	0.5-5 rpm
Mokhoa oa ho futhumatsa	Ho futhumatsa ho hanyetsa motlakase
Boholo ba Mocheso oa Sebōpi	2500°C
Matla a ho futhumatsa	40 kW × 2 × 20 kW
Tekanyo ea Mocheso	Pyrometer ea mebala e 'meli ea infrared
Mocheso Range	900–3000°C
Ho Nepaha ha Mocheso	±1°C
Khatello Range	1-700 mbar
Ho Nepaha ha Taolo ea Khatello	1-10 mbar: ± 0.5% FS; 10-100 mbar: ± 0.5% FS; 100-700 mbar: ± 0.5% FS
Mofuta oa Ts'ebetso	Ho kenya ka tlase, likhetho tsa ts'ireletso tsa matsoho / tse iketsang
Likarolo tsa boikhethelo	Tekanyo ea mocheso o habeli, libaka tse ngata tsa ho futhumatsa

Litšebeletso tsa XKH:

XKH e fana ka ts'ebeletso eohle ea ts'ebetso ea sebōpi sa SiC PVT, ho kenyelletsa le mokhoa oa ho etsa lisebelisoa (moqapi oa tšimo ea mocheso, ho laola ka mokhoa o itekanetseng), nts'etsopele ea ts'ebetso (taolo ea sebopeho sa kristale, ho ntlafatsa sekoli), koetliso ea theknoloji (ts'ebetso le tlhokomelo) le tšehetso ea morao-rao ea thekiso (likarolo tsa graphite sebaka, mocheso oa tšimo ea mocheso) ho thusa bareki ho finyella boleng bo phahameng ba tlhahiso ea boima ba sic. Re boetse re fana ka lits'ebeletso tsa ntlafatso ea ts'ebetso ho tsoela pele ho ntlafatsa chai ea kristale le katleho ea kholo, ka nako e tloaelehileng ea ho etella pele ea likhoeli tse 3-6.