Silicon Carbide (SiC) Substrate e le 'Ngoe ea Crystal – 10×10mm Wafer

Tlhaloso e Khutšoanyane:

Sefaha sa substrate sa 10×10mm Silicon Carbide (SiC) sa 10×10mm ke thepa ea semiconductor e sebetsang hantle e etselitsoeng lisebelisoa tsa motlakase tsa moloko o latelang le lits'ebetso tsa optoelectronic. Ka ho fana ka motlakase o ikhethang, lekhalo le leholo la band, le botsitso bo botle ba lik'hemik'hale, li-substrate tsa SiC li fana ka motheo oa lisebelisoa tse sebetsang hantle tlas'a maemo a mocheso o phahameng, maqhubu a phahameng le motlakase o phahameng. Li-substrate tsena li sehiloe ka nepo ka li-chip tsa lisekoere tsa 10×10mm, tse loketseng lipatlisiso, prototyping le tlhahiso ea lisebelisoa.

Romella imeile ho rona

Likaroloana

Setšoantšo se qaqileng sa wafer ea substrate ea Silicon Carbide (SiC)

Kakaretso ea wafer ea substrate ea Silicon Carbide (SiC)

TheWafer ea substrate ea 10 × 10mm Silicon Carbide (SiC) ea kristale e le 'ngoeke thepa ea semiconductor e sebetsang hantle e etselitsoeng lisebelisoa tsa motlakase tsa moloko o latelang le lits'ebetso tsa optoelectronic. E nang le conductivity e ikhethang ea mocheso, lekhalo le leholo la band, le botsitso bo botle ba lik'hemik'hale, Silicon Carbide (SiC) substrate wafer e fana ka motheo oa lisebelisoa tse sebetsang hantle tlas'a maemo a mocheso o phahameng, maqhubu a phahameng le motlakase o phahameng. Lisebelisoa tsena li arotsoe ka ho nepahalaLi-chips tse sekwere tse 10 × 10mm, e loketseng bakeng sa lipatlisiso, ho etsa li-prototyping le ho etsa lisebelisoa.

Molao-motheo oa Tlhahiso ea Silicon Carbide (SiC) substrate wafer

Sehlahisoa sa substrate sa Silicon Carbide (SiC) se etsoa ka mekhoa ea ho tsamaisa mouoane oa 'mele (PVT) kapa mekhoa ea ho holisa sublimation. Ts'ebetso e qala ka phofo ea SiC e hloekileng haholo e kenngoeng ka har'a graphite crucible. Tlas'a mocheso o feteletseng o fetang 2,000°C le tikoloho e laoloang, phofo e kenella mouoaneng ebe e e beha hape holim'a kristale ea peo e shebaneng ka hloko, e etsa ingot e kholo ea kristale e le 'ngoe e fokolitsoeng ke sekoli.

Hang ha SiC boule e se e holile, e feta:

Ho seha ha Ingot: Lisakha tsa terata tsa taemane tse nepahetseng li seha ingot ea SiC hore e be li-wafer kapa li-chips.

Ho lahla le ho sila: Libaka li batalatsoa ho tlosa matšoao a sakha le ho fihlela botenya bo lekanang.

Ho Hloekisa Mekaniki ea Lik'hemik'hale (CMP): E fihlela qetello ea seipone e loketse epi ka ho ba le bokaholimo bo sa tsitsang haholo.

Ho sebelisa doping ka boikhethelo: Ho sebelisa doping ka naetrojene, aluminium, kapa boron ho ka etsoa ho fetola thepa ea motlakase (mofuta oa n kapa mofuta oa p).

Tlhahlobo ea boleng: Metrology e tsoetseng pele e netefatsa hore wafer e bataletse, ho tšoana ha botenya, le ho ba le sekoli ho fihlela litlhoko tse thata tsa sehlopha sa semiconductor.

Ts'ebetso ena ea mehato e mengata e fella ka li-chips tse matla tsa substrate wafer tsa 10×10mm Silicon Carbide (SiC) tse loketseng kholo ea epitaxial kapa tlhahiso ea sesebelisoa ka kotloloho.

Litšobotsi tsa thepa ea Silicon Carbide (SiC) substrate wafer

Sefaha sa substrate sa Silicon Carbide (SiC) se entsoe haholo-holo ka4H-SiC or 6H-SiCmefuta e mengata:

4H-SiC:E na le motsamao o phahameng oa lielektrone, e leng se etsang hore e be ntle bakeng sa lisebelisoa tsa motlakase tse kang MOSFET le Schottky diodes.
6H-SiC:E fana ka thepa e ikhethang bakeng sa likarolo tsa RF le tsa optoelectronic.

Litšobotsi tsa bohlokoa tsa 'mele tsa Silicon Carbide (SiC) substrate wafer:

Lekhalo le leholo:~3.26 eV (4H-SiC) – e nolofalletsa motlakase o nang le phallo e phahameng le tahlehelo e tlase ea switching.
Ho tsamaisa mocheso:3–4.9 W/cm·K – e qhala mocheso ka katleho, e netefatsa botsitso lits'ebetsong tse nang le matla a mangata.
Boima:~9.2 ka tekanyo ea Mohs – e netefatsa ho tšoarella ha mechini nakong ea ts'ebetso le ts'ebetso ea sesebelisoa.

Tšebeliso ea wafer ea substrate ea Silicon Carbide (SiC)

Ho tenyetseha ha Silicon Carbide (SiC) substrate wafer ho etsa hore e be ea bohlokoa liindastering tse ngata:

Matla a Elektroniki: Motheo oa li-MOSFET, li-IGBT, le li-diode tsa Schottky tse sebelisoang likoloing tsa motlakase (li-EV), phepelo ea motlakase ea indasteri, le li-inverter tsa matla a nchafatsoang.

Lisebelisoa tsa RF le Microwave: Li tšehetsa li-transistors, li-amplifier, le likarolo tsa radar bakeng sa lits'ebetso tsa 5G, sathelaete le tsa ts'ireletso.

Lisebelisoa tsa Optoelectronics: Li sebelisoa ho li-LED tsa UV, li-photodetector le li-diode tsa laser moo ho pepeneneng le botsitso bo phahameng ba UV li leng bohlokoa.

Sefofane le Tšireletso: Sebaka se ka tšeptjoang bakeng sa lisebelisoa tsa elektroniki tse thatafalitsoeng ke mahlaseli a mocheso o phahameng.

Litsi tsa Lipatlisiso le Liunivesithi: E loketse lithuto tsa mahlale a thepa, nts'etsopele ea lisebelisoa tsa mohlala, le ho leka lits'ebetso tse ncha tsa epitaxial.

Litlhaloso tsa Li-chips tsa wafer tsa substrate tsa Silicon Carbide (SiC)

Thepa	Boleng
Boholo	10mm × 10mm sekwere
Botenya	330–500 μm (e ka fetoloang)
Mofuta oa Polytype	4H-SiC kapa 6H-SiC
Boikutlo	Sefofane sa C, se sa tsamaellaneng le maemo (0°/4°)
Qetello ea Bokaholimo	E bentšitsoe ka lehlakore le le leng kapa ka mahlakore a mabeli; e loketse ho ba le epi e fumaneha
Dikgetho tsa ho sebelisa lithethefatsi	Mofuta oa N kapa mofuta oa P
Sehlopha	Kereiti ea lipatlisiso kapa kereiti ea sesebelisoa

Lipotso Tse Botsoang Khafetsa mabapi le wafer ea substrate ea Silicon Carbide (SiC)

P1: Ke eng e etsang hore wafer ea substrate ea Silicon Carbide (SiC) e be molemo ho feta wafer ea silicon ea setso?
SiC e fana ka matla a tšimo a ho senyeha ha 10x a phahameng, ho hanyetsa mocheso ho phahameng, le tahlehelo e tlase ea ho chencha, e leng se etsang hore e be e loketseng lisebelisoa tse sebetsang hantle haholo, tse matla haholo tseo silicon e ke keng ea li tšehetsa.

P2: Na wafer ea substrate ea 10×10mm Silicon Carbide (SiC) e ka fanoa ka likarolo tsa epitaxial?
E. Re fana ka li-substrate tse itokiselitseng epi 'me re ka fana ka li-wafer tse nang le likarolo tse ikhethileng tsa epitaxial ho fihlela litlhoko tse itseng tsa sesebelisoa sa motlakase kapa tlhahiso ea LED.

P3: Na boholo bo ikhethileng le maemo a doping a fumaneha?
Ehlile. Leha di-chip tsa 10×10mm e le maemo a tlwaelehileng bakeng sa dipatlisiso le ho nka disampole tsa disebediswa, boholo bo ikgethileng, botenya, le diprofaele tsa doping di a fumaneha ha ho kopuwa.

P4: Li-wafer tsena li tšoarella hakae libakeng tse feteletseng?
SiC e boloka botsitso ba sebopeho le ts'ebetso ea motlakase kaholimo ho 600°C le tlas'a mahlaseli a mangata, e leng se etsang hore e be e loketseng bakeng sa lisebelisoa tsa elektroniki tsa sefofane le tsa sesole.

Mabapi le rona

XKH e ikhethile ka nts'etsopele ea theknoloji e phahameng, tlhahiso le thekiso ea khalase e khethehileng ea mahlo le thepa e ncha ea kristale. Lihlahisoa tsa rona li sebeletsa lisebelisoa tsa elektroniki tsa mahlo, lisebelisoa tsa elektroniki tsa bareki le sesole. Re fana ka likarolo tsa mahlo tsa Sapphire, likoahelo tsa lense ea mohala oa thekeng, Ceramics, LT, Silicon Carbide SIC, Quartz, le li-wafer tsa kristale tsa semiconductor. Ka boiphihlelo bo nang le boiphihlelo le lisebelisoa tsa sejoale-joale, re ipabola ts'ebetsong ea lihlahisoa tse seng tsa maemo a holimo, re ikemiselitse ho ba khoebo e etellang pele ea theknoloji e phahameng ea lisebelisoa tsa optoelectronic.