Sekepe sa Wafer sa Silicon Carbide (SiC)

Tlhaloso e Khutšoanyane:

Sekepe sa wafer sa Silicon Carbide (SiC) ke sesebelisoa sa ho tsamaisa di-semiconductor se entsoeng ka thepa ea SiC e hloekileng haholo, e etselitsoeng ho tšoara le ho tsamaisa di-wafer nakong ea lits'ebetso tsa bohlokoa tsa mocheso o phahameng tse kang epitaxy, oxidation, diffusion, le annealing.

Romella imeile ho rona

Likaroloana

Setšoantšo se qaqileng

Kakaretso ea Khalase ea Quartz

Ka ntshetsopele e potlakileng ya di-semiconductor tsa motlakase le disebediswa tse se nang le lekhalo le leholo, dikepe tse tlwaelehileng tsa quartz di tobana le mefokolo e kang ho fetoha ha mocheso dithempereichara tse phahameng, tshilafatso e matla ya dikarolwana, le bophelo bo bokgutshwane ba tshebeletso. Dikepe tsa SiC wafer, tse nang le botsitso bo phahameng ba mocheso, tshilafatso e tlase, le bophelo bo bolelele, di ntse di nkela dikepe tsa quartz sebaka ka ho eketsehileng mme di fetoha kgetho e kgethwang tlhahisong ya disebediswa tsa SiC.

Likarolo tsa Bohlokoa

1. Melemo ea Lintho tse bonahalang

E entsoe ka SiC e hloekileng haholo e nang leboima bo phahameng le matla.
Boemo ba ho qhibiliha bo kaholimo ho 2700°C, bo phahameng haholo ho feta quartz, bo netefatsang botsitso ba nako e telele libakeng tse feteletseng.

2. Thepa ea Thermal

Ho tsamaisa mocheso ka potlako le ka mokhoa o ts'oanang, ho fokotsa khatello ea wafer.
Coefficient of thermal expansion (CTE) e tsamaellana haufi-ufi le li-substrate tsa SiC, e fokotsa ho kobeha le ho petsoha ha wafer.

3. Ho Tsitsisa Lik'hemik'hale

E tsitsitse tlas'a mocheso o phahameng le sepakapaka se fapaneng (H₂, N₂, Ar, NH₃, jj.).
Ho hanyetsa oxidation ka mokhoa o babatsehang, ho thibela ho bola le tlhahiso ea likaroloana.

4. Tshebetso ea Ts'ebetso

Bokaholimo bo boreleli le bo teteaneng bo fokotsa ho qhalana ha dikarolwana le tshilafatso.
E boloka botsitso ba boholo le bokgoni ba ho jara ka mora tshebediso ya nako e telele.

5. Ho Boloka Litšenyehelo

Bophelo ba tšebeletso bo bolelele ka makhetlo a 3-5 ho feta likepe tsa quartz.
Ho fokotsa makhetlo a tlhokomelo, ho fokotsa nako ea ho se sebetse le litšenyehelo tsa ho nkela sebaka.

Likopo

SiC Epitaxy: Ho tšehetsa li-substrate tsa SiC tsa lisenthimithara tse 4, lisenthimithara tse 6, le lisenthimithara tse 8 nakong ea kholo ea epitaxial ea mocheso o phahameng.
Tlhahiso ea Sesebelisoa sa Matla: E loketse SiC MOSFET, Schottky Barrier Diodes (SBDs), IGBTs, le disebediswa tse ding.
Kalafo ea Thermal: Mekhoa ea ho bokella metsi, ho a ntša nitridation, le ho etsa hore lintho li be le khabone.
Ho hema le ho Hasana: Sethala sa tšehetso sa wafer se tsitsitseng bakeng sa oxidation le ho hasana mochesong o phahameng.

Litlhaloso tsa Tekheniki

Ntho	Tlhaloso
Thepa	Silicon Carbide e hloekileng haholo (SiC)
Boholo ba Wafer	4-inch / 6-inch / 8-inch (e ka fetoloang)
Mocheso o Phahameng oa Ts'ebetso.	≤ 1800°C
CTE ea Katoloso ea Thermal	4.2 × 10⁻⁶ /K (haufi le substrate ea SiC)
Ho khanna ha mocheso	120–200 W/m·K
Bokakang ba Bokaholimo	Ra < 0.2 μm
Ho tšoana ha lintho	± 0.1 mm
Bophelo ba Tšebeletso	≥ 3× nako e telele ho feta likepe tsa quartz

Papiso: Sekepe sa Quartz khahlanong le Sekepe sa SiC

Tekanyo	Sekepe sa Quartz	Sekepe sa SiC
Khanyetso ea Mocheso	≤ 1200°C, phetoho mochesong o phahameng.	≤ 1800°C, e tsitsitse mochesong
Papali ea CTE le SiC	Ho se lumellane ho hoholo, kotsi ea khatello ea maikutlo ea wafer	Ho bapisa haufi, ho fokotsa ho petsoha ha wafer
Tšilafalo ea Likaroloana	E phahameng, e hlahisa litšila	Bokaholimo bo tlaase, bo boreleli le bo teteaneng
Bophelo ba Tšebeletso	Phetolo e khutšoanyane, e etsoang khafetsa	Nako e telele, nako e telele ea bophelo ke 3–5 ×
Mokhoa o Loketseng	Si epitaxy e tloaelehileng	E ntlafalitsoe bakeng sa lisebelisoa tsa SiC epitaxy le tsa motlakase

Lipotso Tse Botsoang Khafetsa - Likepe tsa Wafer tsa Silicon Carbide (SiC)

1. Sekepe sa SiC sa wafer ke eng?

Sekepe sa SiC wafer ke sesebelisoa sa ho tsamaisa di-semiconductor se entsweng ka silicon carbide e hlwekileng haholo. Se sebediswa ho tshwara le ho tsamaisa di-wafer nakong ya ditsamaiso tsa mocheso o phahameng tse kang epitaxy, oxidation, diffusion, le annealing. Ha di bapiswa le dikepe tsa quartz tsa setso, dikepe tsa SiC wafer di fana ka botsitso bo phahameng ba mocheso, tshilafatso e tlase, le bophelo bo bolelele ba tshebeletso.

2. Ke hobane'ng ha u khetha likepe tsa SiC wafer ho feta likepe tsa quartz?

Ho hanyetsa mocheso o phahameng: E tsitsitse ho fihlela ho 1800°C khahlano le quartz (≤1200°C).
Papali e betere ea CTE: Haufi le li-substrate tsa SiC, ho fokotsa khatello ea wafer le ho petsoha.
Tlhahiso e tlase ea likaroloana: Bokaholimo bo boreleli, bo teteaneng bo fokotsa tšilafalo.
Nako e telele ea bophelo: Nako e telele ka makhetlo a 3–5 ho feta likepe tsa quartz, e leng se fokotsang litšenyehelo tsa beng.

3. Likepe tsa SiC tsa wafer li ka tšehetsa boholo bofe ba wafer?

Re fana ka meralo e tloaelehileng bakeng saLi-inch tse 4, lisenthimithara tse 6, le lisenthimithara tse 8li-wafer, tse nang le mokhoa o felletseng oa ho iketsetsa lintho ho fihlela litlhoko tsa bareki.

4. Ke lits'ebetsong life tse sebelisoang haholo ke likepe tsa SiC wafer?

Kholo ea SiC epitaxial
Tlhahiso ea lisebelisoa tsa semiconductor tsa matla (SiC MOSFET, SBD, IGBTs)
Ho annealing ka mocheso o phahameng, ho nitratea, le ho etsa hore carbonization e be teng
Mekhoa ea ho ntša oksijene le ho hasana

Mabapi le rona

XKH e ikhethile ka nts'etsopele ea theknoloji e phahameng, tlhahiso le thekiso ea khalase e khethehileng ea mahlo le thepa e ncha ea kristale. Lihlahisoa tsa rona li sebeletsa lisebelisoa tsa elektroniki tsa mahlo, lisebelisoa tsa elektroniki tsa bareki le sesole. Re fana ka likarolo tsa mahlo tsa Sapphire, likoahelo tsa lense ea mohala oa thekeng, Ceramics, LT, Silicon Carbide SIC, Quartz, le li-wafer tsa kristale tsa semiconductor. Ka boiphihlelo bo nang le boiphihlelo le lisebelisoa tsa sejoale-joale, re ipabola ts'ebetsong ea lihlahisoa tse seng tsa maemo a holimo, re ikemiselitse ho ba khoebo e etellang pele ea theknoloji e phahameng ea lisebelisoa tsa optoelectronic.