Sephaephe sa Silicon Dioxide sa SiO2 se tenya se hloekisitsoeng, se phahameng le sa Tlhahlobo

Sephaphatha sa Silicon Dioxide SiO2 sephara se teteaneng se bentšitsoeng, sa Prime And Test Grade Featured Image

Tlhaloso e Khutšoanyane:

Thermal oxidation ke phello ea ho pepesa sephaphatha sa silicon ho motsoako oa li-oxidizing agents le mocheso ho etsa lera la silicon dioxide (SiO2) .Khampani ea rona e ka etsa li-flakes tsa silicon dioxide oxide ka mekhoa e fapaneng bakeng sa bareki, ka boleng bo botle; botenya ba oxide layer, compactness, uniformity le resistivity kristale orientation kaofela li kenngoa ts'ebetsong ho latela maemo a naha.

Re romelle lengolo-tsoibila

Lintlha tsa Sehlahisoa

Li-tag tsa Sehlahisoa

Hlahisa lebokose la wafer

Sehlahisoa	Li-wafers tsa Thermal Oxide (Si+SiO2).
Mokhoa oa Tlhahiso	LPCVD
Ho benya ha Bokaholimo	SSP/DSP
Diameter	2inch/3inch/4inch/5inch/6inch
Mofuta	Mofuta oa P / N
Botenya ba Lera la Oxidation	100nm ~ 1000nm
Boitloaelo	<100> <111>
Restivity ea motlakase	0.001-25000(Ω•cm)
Kopo	E sebelisetsoa ho tsamaisa sampole ea mahlaseli a synchrotron, ho roala ha PVD/CVD joalo ka substrate, sampole ea kholo ea magnetron sputtering, XRD, SEM,Matla a atomic, spectroscopy ea infrared, fluorescence spectroscopy le likaroloana tse ling tsa tlhahlobo ea tlhahlobo, li-molecular beam epitaxial growth substrates, tlhahlobo ea X-ray ea crystalline semiconductors.

Li-wafers tsa Silicon oxide ke lifilimi tsa silicon dioxide tse hōlileng holim'a liphaphatha tsa silicon ka ho sebelisa oksijene kapa mouoane oa metsi mochesong o phahameng (800 ° C ~ 1150 ° C) ho sebelisoa mokhoa oa ho futhumatsa oxidation ka thepa ea sebōpi sa khatello ea sepakapaka. Botenya ba ts'ebetso bo tloha ho li-nanometers tse 50 ho isa ho li-microns tse 2, mocheso oa ts'ebetso o fihla ho likhato tse 1100 tsa Celsius, mokhoa oa ho hōla o arotsoe ka "oksijene e metsi" le "oksijene e omileng" mefuta e 'meli. Thermal Oxide ke "khōlō" ea oxide layer, e nang le ho tšoana ho holimo, ho teteana ho molemo le matla a phahameng a dielectric ho feta CVD deposited layers oxide, e hlahisang boleng bo holimo.

Oxygen Oxidation e omileng

Silicon e sebetsana le oksijene 'me lesela la oxide le lula le lebile ho substrate layer. Oxidation e omileng e hloka ho etsoa ka mocheso ho tloha ho 850 ho isa ho 1200 ° C, ka sekhahla sa kholo e tlase, 'me e ka sebelisoa bakeng sa kholo ea heke e sirelelitsoeng ea MOS. Oxidation e ommeng e ratoa ho feta ea oxidation e metsi ha ho hlokahala lesela la boleng bo holimo, le tšesaane haholo la silicon. Matla a oxidation a omileng: 15nm ~ 300nm.

2. Metsi a Oxidation

Mokhoa ona o sebelisa mouoane oa metsi ho etsa lera la oxide ka ho kenya tube ea sebōpi tlas'a maemo a phahameng a mocheso. The densification ea metsi oksijene oxidation e mpe hanyenyane ho feta oksijene e omeletseng ea oksijene, empa ha e bapisoa le oxidation e omeletseng ea oksijene molemo oa eona ke hore e na le sekhahla se phahameng sa khōlo, se loketseng ho feta khōlo ea filimi ea 500nm. Bokhoni ba oxidation ea metsi: 500nm ~ 2µm.

AEMD's atmospheric pressure oxidation furnace tube ke sebopi sa Czech se otlolohileng, se khetholloang ka botsitso bo phahameng ba ts'ebetso, ho tšoana hantle ha filimi le taolo e phahameng ea likaroloana. Thepa ea silicon oxide sebōpi e ka sebetsa ho fihla ho li-wafers tse 50 ka tube ka 'ngoe, e nang le ts'ebetso e ntle ea intra- le inter-wafers.