Substrate
-
4H-N 8 inch SiC substrate wafer Silicon Carbide Dummy Sehlopha sa lipatlisiso 500um botenya
-
4H-N/6H-N SiC Wafer Reasearch tlhahiso ea Dummy grade Dia150mm Silicon carbide substrate
-
8inch 200mm Silicon Carbide SiC Wafers 4H-N mofuta oa tlhahiso ea sehlopha sa 500um botenya
-
Dia300x1.0mmt Thickness Sapphire Wafer C-Plane SSP/DSP
-
HPSI SiC wafer dia:3inch botenya:350um± 25 µm bakeng sa Power Electronics
-
8 inch 200mm Sapphire substrate sapphire wafer e tšesaane botenya 1SP 2SP 0.5mm 0.75mm
-
Single kristale Al2O3 99.999% Dia200mm safire wafers 1.0mm 0.75mm botenya
-
156mm 159mm 6 inch Sapphire Wafer bakeng sa carrierC-Plane DSP TTV
-
C/A/M axis 4 inch sapphire wafers single crystal Al2O3,SSP DSP high hardness sapphire substrate
-
3inch High purity Semi-Insulating (HPSI) SiC wafer 350um Dummy grade grade
-
P-mofuta oa SiC substrate SiC wafer Dia2inch sehlahisoa se secha
-
2Inch 6H-N Silicon Carbide Substrate Sic Wafer Habedi Conductive Prime Grade Mos