Substrate
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2Inch 6H-N Silicon Carbide Substrate Sic Wafer Habedi Conductive Prime Grade Mos
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SiC silicon carbide wafer SiC wafer 4H-N 6H-N HPSI (High purity Semi-Insulating) 4H/6H-P 3C -n mofuta 2 3 4 6 8inch fumaneha
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safire ingot 3inch 4inch 6inch Monocrystal CZ KY mokhoa Customizable
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selikalikoe sa safire se entsoeng ka thepa ea maiketsetso ea safire e Transparent and customizable Mohs hardness of 9
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2 inch Sic silicon carbide substrate 6H-N Mofuta oa 0.33mm 0.43mm ho belisoa ka mahlakoreng a mabeli
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GaAs high-power epitaxial wafer substrate gallium arsenide wafer power laser wavelength 905nm bakeng sa kalafo ya laser ya bongaka
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GaAs laser epitaxial wafer 4 inch 6 inch VCSEL vertical cavity surface emission laser wavelength 940nm single junction
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2inch 3inch 4inch InP epitaxial wafer substrate APD detector bakeng sa likhokahano tsa fiber optic kapa LiDAR
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selikalikoe sa safire se entsoeng ka safire ka botlalo se entsoe ka thepa ea safire e Transparent lab e entsoeng ka safire
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Sapphire ingot dia 4inch×80mm Monocrystalline Al2O3 99.999% Single Crystal
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Sapphire Prism Sapphire Lens High transparency Al2O3 BK7 JGS1 JGS2 Material Optical Instrument
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SiC substrate 3inch 350um botenya HPSI mofuta Prime Grade Dummy grade