Substrate
-
6 ho Silicon Carbide 4H-SiC Semi-Insulating Ingot, Dummy Grade
-
3 inch High Purity (Undoped) Silicon Carbide Wafers semi-Insulating Sic Substrates (HPSl)
-
SiC substrate 3inch 350um botenya HPSI mofuta Prime Grade Dummy grade
-
Silicon Carbide SiC Ingot 6inch N mofuta Dummy/prime grade botenya ka ba customized
-
SiC Ingot 4H mofuta oa Dia 4inch 6inch Thickness 5-10mm Research / Dummy Grade
-
6inch safire Boule sapphire blank single crystal Al2O3 99.999%
-
Sic Substrate Silicon Carbide Wafer 4H-N Type High Hardness Corrosion Resistance Prime Grade Polishing
-
2inch Silicon Carbide Wafer 6H-N Type Prime Grade Research Kereiting ea Dummy Kereiti 330μm 430μm Botenya
-
2inch silicon carbide substrate 6H-N habeli mahlakoreng a bentšitsoeng bophara ba 50.8mm sehlopha sa lipatlisiso tsa sehlopha sa tlhahiso.
-
p-mofuta 4H/6H-P 3C-N MOFUTA SIC substrate 4inch 〈111〉± 0.5°Zero MPD
-
SiC substrate P-mofuta 4H/6H-P 3C-N 4inch e nang le botenya ba 350um Sehlopha sa Tlhahiso ea Dummy
-
4H/6H-P 6inch SiC wafer Zero MPD kereiti ya Tlhahiso Kereiti ya Dummy