Substrate
-
SiC wafer 4H-N 6H-N HPSI 4H-semi 6H-semi 4H-P 6H-P 3C mofuta 2inch 3inch 4inch 6inch 8inch
-
safire ingot 3inch 4inch 6inch Monocrystal CZ KY mokhoa Customizable
-
2inch 3inch 4inch InP epitaxial wafer substrate APD detector bakeng sa likhokahano tsa fiber optic kapa LiDAR
-
selikalikoe sa safire se entsoeng ka thepa ea maiketsetso ea safire e Transparent and customizable Mohs hardness of 9
-
2 inch Sic silicon carbide substrate 6H-N Mofuta oa 0.33mm 0.43mm ho belisoa ka mahlakoreng a mabeli
-
GaAs high-power epitaxial wafer substrate gallium arsenide wafer power laser wavelength 905nm bakeng sa kalafo ya laser ya bongaka
-
GaAs laser epitaxial wafer 4 inch 6 inch VCSEL vertical cavity surface emission laser wavelength 940nm single junction
-
selikalikoe sa safire se entsoeng ka safire ka botlalo se entsoe ka thepa ea safire e Transparent lab e entsoeng ka safire
-
Sapphire ingot dia 4inch×80mm Monocrystalline Al2O3 99.999% Single Crystal
-
Sapphire Prism Sapphire Lens High transparency Al2O3 BK7 JGS1 JGS2 Material Optical Instrument
-
SiC substrate 3inch 350um botenya HPSI mofuta Prime Grade Dummy grade
-
Silicon Carbide SiC Ingot 6inch N mofuta Dummy/prime grade botenya ka ba customized