Sebaka se ka tlas'a lefatše
-
InSb wafer 2inch 3inch undoped Ntype P type orientation 111 100 bakeng sa Infrared Detectors
-
Li-wafer tsa Indium Antimonide (InSb) mofuta oa N mofuta oa P Epi e se e loketse ho se etsoe Li-wafer tsa Te tse nang le dope kapa Ge tse nang le dope Botenya ba 2inch 3inch 4inch Indium Antimonide (InSb)
-
SiC wafer 4H-N 6H-N HPSI 4H-semi 6H-semi 4H-P 6H-P 3C mofuta 2inch 3inch 4inch 6inch 8inch
-
Mokhoa oa Sapphire Ingot 3inch 4inch 6inch Monocrystal CZ KY E ka fetoloang
-
Substrate ea carbide ea Sic silicon ea lisenthimithara tse 2 6H-N Mofuta 0.33mm 0.43mm polishing e mahlakore a mabeli Conductivity e phahameng ea mocheso Tšebeliso e tlase ea matla
-
GaAs e nang le matla a phahameng a epitaxial wafer substrate gallium arsenide wafer power laser wavelength 905nm bakeng sa kalafo ea bongaka ea laser
-
GaAs laser epitaxial wafer 4 inch VCSEL vertical cavity surface emission wavelength 940nm single conference
-
Sesebelisoa sa ho lemoha leseli sa APD sa InP epitaxial wafer substrate sa 2inch 3inch 4inch bakeng sa puisano ea fiber optic kapa LiDAR
-
Lesale la safire le entsoeng ka thepa ea safire ea maiketsetso
-
Lesale la safire le entsoeng ka safire ka botlalo, lesela la safire le entsoeng ka laboratoring, le bonaletsang
-
Sapphire ingot dia 4inch× 80mm Monocrystalline Al2O3 99.999% Single Crystal
-
Lense ea Sapphire Prism Sapphire e nang le ponaletso e phahameng Al2O3 BK7 JGS1 JGS2 Sesebelisoa sa Optical sa Material