Karolo e ka tlase ea 12 Inch SiC Bophara 300mm Botenya 750μm 4H-N Mofuta o ka fetoloa

Karolo e ka tlase ea SiC ea lisenthimithara tse 12 Bophara 300mm Botenya 750μm 4H-N Mofuta o ka fetoloa Setšoantšo se Hlahisitsoeng

Tlhaloso e Khutšoanyane:

Nakong ea bohlokoa phetohong ea indasteri ea semiconductor ho ea litharollong tse sebetsang hantle le tse nyane, ho hlaha ha substrate ea SiC ea lisenthimithara tse 12 (substrate ea silicon carbide ea lisenthimithara tse 12) ho fetotse sebaka ka botlalo. Ha ho bapisoa le litlhaloso tsa setso tsa lisenthimithara tse 6 le lisenthimithara tse 8, molemo o moholo oa substrate ea lisenthimithara tse 12 o eketsa palo ea li-chips tse hlahisoang ka wafer ka makhetlo a fetang a mane. Ho feta moo, litšenyehelo tsa yuniti ea substrate ea SiC ea lisenthimithara tse 12 li fokotsehile ka 35-40% ha li bapisoa le substrate tse tloaelehileng tsa lisenthimithara tse 8, e leng habohlokoa bakeng sa ho amoheloa ha lihlahisoa tsa ho qetela ka bongata.
Ka ho sebelisa theknoloji ea rona ea kholo ea lipalangoang tsa mouoane, re fihletse taolo e etellang pele indastering holim'a bongata ba ho falla ha likristale tsa lisenthimithara tse 12, e leng se fanang ka motheo o ikhethang oa thepa bakeng sa tlhahiso ea lisebelisoa tse latelang. Tsoelo-pele ena e bohlokoa haholo har'a khaello ea li-chip lefatšeng ka bophara hona joale.

Lisebelisoa tsa bohlokoa tsa motlakase lits'ebetsong tsa letsatsi le letsatsi—tse kang liteishene tsa ho tjhaja ka potlako tsa EV le liteishene tsa motheo tsa 5G—li ntse li sebelisa substrate ena e kholo ka ho eketsehileng. Haholo-holo libakeng tse nang le mocheso o phahameng, motlakase o phahameng, le libaka tse ling tse thata tsa ts'ebetso, substrate ea SiC ea lisenthimithara tse 12 e bontša botsitso bo phahameng haholo ha e bapisoa le thepa e thehiloeng ho silicon.

Romella imeile ho rona

Likaroloana

Litekanyetso tsa tekheniki

Tlhaloso ea Substrate ea Silicon Carbide (SiC) ea lisenthimithara tse 12
Sehlopha		Tlhahiso ea ZeroMPD Sehlopha (Kereiti ea Z)	Tlhahiso e Tloaelehileng Sehlopha (Kereiti ea P)		Sehlopha sa Mashano (Kereiti ea D)
Bophara		3 0 0 mm~1305mm
Botenya	4H-N	750μm±15 μm	750μm±25 μm
	4H-SI	750μm±15 μm	750μm±25 μm
Boikutlo ba Wafer		Mothapo o sa sebetseng: 4.0° ho ya ho <1120 >±0.5° bakeng sa 4H-N, Mothapo o sa sebetseng: <0001>±0.5° bakeng sa 4H-SI
Botebo ba Micropipe	4H-N	≤0.4cm-2	≤4cm-2		≤25cm-2
	4H-SI	≤5cm-2	≤10cm-2		≤25cm-2
Ho hanyetsa	4H-N	0.015~0.024 Ω·cm			0.015~0.028 Ω·cm
	4H-SI	≥1E10 Ω·cm			≥1E5 Ω·cm
Boikutlo ba Motheo bo bataletseng		{10-10} ±5.0°
Bolelele ba Sephara ba Motheo	4H-N	Ha e eo
	4H-SI	Notch
Ho se kenyeletsoe ha Moeli		3 mm
LTV/TTV/Seqha/Sekotwana		≤5μm/≤15μm/≤35 μm/≤55 μm			≤5μm/≤15μm/≤35 □ μm/≤55 □ μm
Ho ba le makukuno		Ra≤1 nm ea Poland
		CMP Ra≤0.2 nm			Ra≤0.5 nm
Mapetso a Moeli ka Leseli le Matla a Phahameng Lipoleiti tsa Hex ka Leseli le Phahameng la Matla Libaka tsa Polytype ka Leseli le Matla a Phahameng Ho kenyeletsoa ha Khabone e Bonahalang Mengoapo ea Silicon Bokaholimo ka Leseli le Matla a Phahameng		Ha ho letho Sebaka se bokellaneng ≤0.05% Ha ho letho Sebaka se bokellaneng ≤0.05% Ha ho letho			Bolelele bo bokellaneng ≤ 20 mm, bolelele bo le bong ≤2 mm Sebaka se bokellaneng ≤0.1% Sebaka se bokellaneng ≤3% Sebaka se bokellaneng ≤3% Bolelele bo bokellaneng ≤1 × bophara ba wafer
Li-chips tsa Edge ka Leseli le Phahameng la Matla		Ha ho letho le dumelletsweng bophara le botebo ba ≥0.2mm			7 e lumelletsoe, ≤1 mm ka 'ngoe
(TSD) Ho qhaqha ha sekurufu sa khoele		≤500 cm-2		Ha e eo
(BPD) Ho falla ha sefofane sa motheo		≤1000 cm-2		Ha e eo
Tšilafalo ea Bokaholimo ba Silicon ke Leseli le Matla a Phahameng		Ha ho letho
Sephutheloana		Cassette ea wafer e nang le li-multi-wafer kapa setshelo se le seng sa wafer
Lintlha:
1 Meeli ea liphoso e sebetsa holim'a wafer eohle ntle le sebaka se ka thoko se ka thoko. 2Maqeba a lokela ho hlahlojwa sefahlehong sa Si feela. 3 Lintlha tsa ho falla li tsoa feela ho li-wafer tse betliloeng tsa KOH.

Likarolo tsa Bohlokoa

1. Bokgoni ba Tlhahiso le Melemo ya Ditjeo: Tlhahiso e kgolo ya substrate ya SiC ya di-inch tse 12 (substrate ya silicon carbide ya di-inch tse 12) e tshwaya mehla e metjha tlhahisong ya di-semiconductor. Palo ya di-chips tse ka fumanwang ho tswa ho wafer e le nngwe e fihla makgetlo a 2.25 ho feta ya substrate ya di-inch tse 8, e leng se etsang hore tlhahiso e be kgolo ka ho toba. Maikutlo a bareki a bontsha hore ho amohela substrate ya di-inch tse 12 ho fokoditse ditjeo tsa bona tsa tlhahiso ya module ya motlakase ka 28%, e leng se etsang hore ho be le monyetla wa tlholisano o tiileng mmarakeng o qothisanang lehlokoa haholo.
2. Litšobotsi tse Ikhethang tsa 'Mele: Substrate ea SiC ea lisenthimithara tse 12 e rua melemo eohle ea thepa ea carbide ea silicon - ho tsamaisa ha eona mocheso ho feta silicon ka makhetlo a 3, ha matla a eona a tšimo a ho senyeha a fihla makhetlo a 10 ho feta silicon. Litšobotsi tsena li nolofalletsa lisebelisoa tse thehiloeng ho substrate ea lisenthimithara tse 12 ho sebetsa ka botsitso libakeng tse nang le mocheso o phahameng o fetang 200°C, e leng se etsang hore li tšoanelehe haholo bakeng sa lits'ebetso tse thata joalo ka likoloi tsa motlakase.
3. Theknoloji ea Kalafo ea Bokaholimo: Re ntlafalitse mokhoa o mocha oa ho bentša ka mechine ea lik'hemik'hale (CMP) ka ho khetheha bakeng sa li-substrate tsa SiC tsa lisenthimithara tse 12, ho fihlela boemo ba ho batalla ha bokaholimo ba athomo (Ra<0.15nm). Katleho ena e rarolla phephetso ea lefats'e ka bophara ea kalafo ea bokaholimo ba silicon carbide ea bophara bo boholo, e tlosa litšitiso bakeng sa kholo ea boleng bo holimo ea epitaxial.
4. Tshebetso ya Taolo ya Thermal: Ditshebedisong tse sebetsang, di-substrate tsa SiC tsa di-inch tse 12 di bontsha bokgoni bo makatsang ba ho qhala mocheso. Lintlha tsa teko di bontsha hore tlasa matla a tshwanang a matla, disebediswa tse sebedisang di-substrate tsa di-inch tse 12 di sebetsa mochesong o ka tlase ho 40-50°C ho feta disebediswa tse thehilweng ho silicon, e leng se eketsang bophelo ba tshebeletso ya disebediswa haholo.

Likopo tse ka Sehloohong

1. Tikoloho e Ncha ea Likoloi tsa Matla: Substrate ea SiC ea lisenthimithara tse 12 (substrate ea silicon carbide ea lisenthimithara tse 12) e fetola meralo ea motlakase oa likoloi tsa motlakase. Ho tloha ho li-charger tse ka hare ho sekepe (OBC) ho ea ho li-inverter tse kholo tsa ho khanna le litsamaiso tsa taolo ea libeteri, ntlafatso ea bokhoni e tlisoang ke substrate ea lisenthimithara tse 12 e eketsa sebaka sa likoloi ka 5-8%. Litlaleho tse tsoang ho moetsi oa likoloi ea ka sehloohong li bontša hore ho amohela substrate tsa rona tsa lisenthimithara tse 12 ho fokolitse tahlehelo ea matla tsamaisong ea tsona ea ho tjhaja ka potlako ka 62%. e tsotehang.
2. Lekala la Matla a Nchafatswang: Liteisheneng tsa motlakase tsa photovoltaic, li-inverter tse thehiloeng holim'a li-substrate tsa SiC tsa lisenthimithara tse 12 ha li na feela lintlha tse nyane tsa sebopeho empa hape li fihlella katleho ea phetoho e fetang 99%. Haholo-holo maemong a tlhahiso e ajoang, katleho ena e phahameng e fetolela poloko ea selemo le selemo ea li-yuan tse makholo a likete tahlehelong ea motlakase bakeng sa basebetsi.
3. Boiketsetso ba Indasteri: Li-converter tsa maqhubu tse sebelisang li-substrate tsa lisenthimithara tse 12 li bontša ts'ebetso e ntle haholo lirobotong tsa indasteri, lisebelisoa tsa mochini oa CNC, le lisebelisoa tse ling. Litšobotsi tsa tsona tsa ho fetola maqhubu a phahameng li ntlafatsa lebelo la karabelo ea enjene ka 30% ha li ntse li fokotsa tšitiso ea motlakase ho karolo ea boraro ea litharollo tse tloaelehileng.
4. Ntlafatso ea Lisebelisoa tsa Elektroniki tsa Bareki: Mahlale a ho tjhaja ka potlako a li-smartphone tsa moloko o latelang a qalile ho amohela li-substrate tsa SiC tsa lisenthimithara tse 12. Ho hakanngoa hore lihlahisoa tse tjhajang ka potlako tse fetang 65W li tla fetohela ka botlalo ho litharollo tsa silicon carbide, 'me li-substrate tsa lisenthimithara tse 12 li hlahella e le khetho e ntle ka ho fetisisa ea ts'ebetso ea litšenyehelo.

Litšebeletso tse Ikhethileng tsa XKH bakeng sa Substrate ea SiC ea lisenthimithara tse 12

Ho fihlela litlhoko tse itseng bakeng sa li-substrate tsa SiC tsa lisenthimithara tse 12 (li-substrate tsa silicon carbide tsa lisenthimithara tse 12), XKH e fana ka tšehetso e felletseng ea litšebeletso:
1.Tlhophiso ea Boima:
Re fana ka li-substrate tsa lisenthimithara tse 12 ka litlhaloso tse fapaneng tsa botenya ho kenyeletsoa le 725μm ho fihlela litlhoko tse fapaneng tsa ts'ebeliso.
2. Ho sebelisa lithethefatsi tse ngata:
Tlhahiso ea rona e tšehetsa mefuta e mengata ea conductivity ho kenyeletsoa le substrates tsa mofuta oa n le mofuta oa p, ka taolo e nepahetseng ea resistivity e pakeng tsa 0.01-0.02Ω·cm.
3. Litšebeletso tsa Teko:
Ka lisebelisoa tse felletseng tsa tlhahlobo ea boemo ba wafer, re fana ka litlaleho tse felletseng tsa tlhahlobo.
XKH e utloisisa hore moreki e mong le e mong o na le litlhoko tse ikhethang bakeng sa li-substrate tsa SiC tsa lisenthimithara tse 12. Ka hona, re fana ka mehlala ea tšebelisano-'moho ea khoebo e tenyetsehang ho fana ka litharollo tse hlōlisanang ka ho fetisisa, ebang ke bakeng sa:
· Disampole tsa R&D
· Litheko tsa tlhahiso ea bongata
Litšebeletso tsa rona tse ikhethileng li netefatsa hore re ka fihlela litlhoko tsa hau tse ikhethang tsa tekheniki le tlhahiso bakeng sa li-substrate tsa SiC tsa lisenthimithara tse 12.