12 inch SiC Substrate N Type Large Size High Performance RF Applications

Tlhaloso e Khutšoanyane:

Substrate ea SiC ea lisenthimithara tse 12 e emela tsoelo-pele e kholo theknolojing ea thepa ea semiconductor, e fanang ka melemo e fetolang bakeng sa lisebelisoa tsa motlakase le lits'ebetso tsa maqhubu a phahameng. Jwalo ka sebopeho se seholo ka ho fetisisa sa wafer ea silicon carbide e fumanehang khoebong indastering, substrate ea SiC ea lisenthimithara tse 12 e nolofalletsa moruo o sa tloaelehang oa boholo ha e ntse e boloka melemo ea tlhaho ea thepa ea litšobotsi tse pharaletseng tsa bandgap le thepa e ikhethang ea mocheso. Ha e bapisoa le li-wafer tsa SiC tsa lisenthimithara tse 6 kapa tse nyane tse tloaelehileng, sethala sa lisenthimithara tse 12 se fana ka sebaka se ka sebelisoang ho feta 300% ka wafer, se eketsa chai ea die haholo le ho fokotsa litšenyehelo tsa tlhahiso bakeng sa lisebelisoa tsa motlakase. Phetoho ena ea boholo e bonahatsa phetoho ea nalane ea li-wafer tsa silicon, moo keketseho e 'ngoe le e 'ngoe ea bophara e tlisitseng phokotso e kholo ea litšenyehelo le ntlafatso ea ts'ebetso. Ho khanna ha mocheso ho phahameng ha substrate ea SiC ea lisenthimithara tse 12 (hoo e ka bang 3 × ea silicon) le matla a maholo a tšimo a ho senyeha ho etsa hore e be ea bohlokoa haholo bakeng sa litsamaiso tsa likoloi tsa motlakase tsa moloko o latelang tsa 800V, moo e nolofalletsang li-module tsa motlakase tse nyane le tse sebetsang hantle. Meralong ea motheo ea 5G, lebelo le phahameng la ho sata ha elektrone ea thepa le lumella lisebelisoa tsa RF ho sebetsa maqhubung a phahameng ka tahlehelo e tlase. Ho tsamaellana ha substrate le disebediswa tsa tlhahiso ya silicon tse fetotsweng ho boetse ho thusa ho amohelwa ha thepa e seng e ntse e le teng ka bonolo, leha ho hlokahala tlhokomelo e ikgethang ka lebaka la ho thatafala ho feteletseng ha SiC (9.5 Mohs). Ha bongata ba tlhahiso bo ntse bo eketseha, substrate ya SiC ya di-inch tse 12 e lebelletswe ho ba tekanyetso ya indasteri bakeng sa ditshebediso tse nang le matla a maholo, e leng se kgannang boqapi ho pholletsa le ditsamaiso tsa ho fetola matla a dikoloi, matla a ntjhafatswang, le matla a indasteri.

Romella imeile ho rona

Likaroloana

Litekanyetso tsa tekheniki

Tlhaloso ea Substrate ea Silicon Carbide (SiC) ea lisenthimithara tse 12
Sehlopha		Tlhahiso ea ZeroMPD Sehlopha (Kereiti ea Z)	Tlhahiso e Tloaelehileng Sehlopha (Kereiti ea P)		Sehlopha sa Mashano (Kereiti ea D)
Bophara		3 0 0 mm~1305mm
Botenya	4H-N	750μm±15 μm	750μm±25 μm
	4H-SI	750μm±15 μm	750μm±25 μm
Boikutlo ba Wafer		Mothapo o sa sebetseng: 4.0° ho ya ho <1120 >±0.5° bakeng sa 4H-N, Mothapo o sa sebetseng: <0001>±0.5° bakeng sa 4H-SI
Botebo ba Micropipe	4H-N	≤0.4cm-2	≤4cm-2		≤25cm-2
	4H-SI	≤5cm-2	≤10cm-2		≤25cm-2
Ho hanyetsa	4H-N	0.015~0.024 Ω·cm			0.015~0.028 Ω·cm
	4H-SI	≥1E10 Ω·cm			≥1E5 Ω·cm
Boikutlo ba Motheo bo bataletseng		{10-10} ±5.0°
Bolelele ba Sephara ba Motheo	4H-N	Ha e eo
	4H-SI	Notch
Ho se kenyeletsoe ha Moeli		3 mm
LTV/TTV/Seqha/Sekotwana		≤5μm/≤15μm/≤35 μm/≤55 μm			≤5μm/≤15μm/≤35 □ μm/≤55 □ μm
Ho ba le makukuno		Ra≤1 nm ea Poland
		CMP Ra≤0.2 nm			Ra≤0.5 nm
Mapetso a Moeli ka Leseli le Matla a Phahameng Lipoleiti tsa Hex ka Leseli le Phahameng la Matla Libaka tsa Polytype ka Leseli le Matla a Phahameng Ho kenyeletsoa ha Khabone e Bonahalang Ho ngoatheloa ha bokaholimo ba Silicon ke Leseli le Matla a Phahameng		Ha ho letho Sebaka se bokellaneng ≤0.05% Ha ho letho Sebaka se bokellaneng ≤0.05% Ha ho letho			Bolelele bo bokellaneng ≤ 20 mm, bolelele bo le bong ≤2 mm Sebaka se bokellaneng ≤0.1% Sebaka se bokellaneng ≤3% Sebaka se bokellaneng ≤3% Bolelele bo bokellaneng ≤1 × bophara ba wafer
Li-chips tsa Edge ka Leseli le Phahameng la Matla		Ha ho letho le dumelletsweng bophara le botebo ba ≥0.2mm			7 e lumelletsoe, ≤1 mm ka 'ngoe
(TSD) Ho qhaqha ha sekurufu sa khoele		≤500 cm-2		Ha e eo
(BPD) Ho falla ha sefofane sa motheo		≤1000 cm-2		Ha e eo
Tšilafalo ea Bokaholimo ba Silicon ke Leseli le Matla a Phahameng		Ha ho letho
Sephutheloana		Cassette ea wafer e nang le li-multi-wafer kapa setshelo se le seng sa wafer
Lintlha:
1 Meeli ea liphoso e sebetsa holim'a wafer eohle ntle le sebaka se ka thoko se ka thoko. 2Maqeba a lokela ho hlahlojwa sefahlehong sa Si feela. 3 Lintlha tsa ho falla li tsoa feela ho li-wafer tse betliloeng tsa KOH.

Likarolo tsa Bohlokoa

1. Molemo oa Boholo bo Boholo: Substrate ea SiC ea lisenthimithara tse 12 (substrate ea silicon carbide ea lisenthimithara tse 12) e fana ka sebaka se seholo sa wafer e le 'ngoe, e leng se nolofalletsang ho hlahisoa li-chips tse ngata ka wafer, ka hona ho fokotsa litšenyehelo tsa tlhahiso le ho eketsa chai.
2. Thepa e Sebetsang ka Botlalo: Khanyetso e phahameng ea silicon carbide le matla a tšimo a ho senyeha ho hoholo li etsa hore substrate ea lisenthimithara tse 12 e be e loketseng lits'ebetso tsa motlakase o phahameng le maqhubu a phahameng, joalo ka li-inverter tsa EV le litsamaiso tsa ho tjhaja ka potlako.
3. Ho Tsamaisana ha Ts'ebetso: Ho sa tsotelehe bothata bo phahameng le mathata a ts'ebetso a SiC, substrate ea SiC ea lisenthimithara tse 12 e fihlella liphoso tse tlase tsa bokaholimo ka mekhoa e ntlafalitsoeng ea ho seha le ho bentša, e ntlafatsang chai ea sesebelisoa.
4. Tsamaiso e Phahameng ea Thermal: Ka ho tsamaisa mocheso hantle ho feta thepa e thehiloeng ho silicon, substrate ea lisenthimithara tse 12 e sebetsana ka katleho le ho qhalana ha mocheso lisebelisoa tse nang le matla a maholo, e leng se eketsang nako ea bophelo ba lisebelisoa.

Likopo tse ka Sehloohong

1. Likoloi tsa Motlakase: Substrate ea SiC ea lisenthimithara tse 12 (substrate ea silicon carbide ea lisenthimithara tse 12) ke karolo ea bohlokoa ea litsamaiso tsa motlakase tsa moloko o latelang, e nolofalletsang li-inverter tse sebetsang hantle tse ntlafatsang sebaka le ho fokotsa nako ea ho tjhaja.

2. Liteishene tsa Motheo tsa 5G: Li-substrate tse kholo tsa SiC li tšehetsa lisebelisoa tsa RF tse nang le maqhubu a phahameng, li fihlela litlhoko tsa liteishene tsa motheo tsa 5G bakeng sa matla a phahameng le tahlehelo e tlase.

3. Lisebelisoa tsa Motlakase tsa Indasteri: Li-inverter tsa letsatsi le li-grid tse bohlale, substrate ea lisenthimithara tse 12 e ka mamella li-voltage tse phahameng ha e ntse e fokotsa tahlehelo ea matla.

4. Lisebelisoa tsa Elektroniki tsa Bareki: Litjhaja tse potlakileng tsa nakong e tlang le lisebelisoa tsa motlakase tsa setsi sa data li ka sebelisa li-substrate tsa SiC tsa lisenthimithara tse 12 ho fihlela boholo bo kopaneng le katleho e phahameng.

Litšebeletso tsa XKH

Re ikhethile ka lits'ebeletso tsa ts'ebetso tse ikhethileng bakeng sa li-substrate tsa SiC tsa lisenthimithara tse 12 (li-substrate tsa silicon carbide tsa lisenthimithara tse 12), ho kenyeletsoa:
1. Ho seha le ho polisha: Ts'ebetso ea substrate e nang le tšenyo e tlase, e bataletseng haholo e etselitsoeng litlhoko tsa bareki, e netefatsa ts'ebetso e tsitsitseng ea sesebelisoa.
2. Tšehetso ea Kholo ea Epitaxial: Litšebeletso tsa epitaxial wafer tsa boleng bo holimo ho potlakisa tlhahiso ea li-chip.
3. Prototype ea Sehlopha se Senyenyane: E tšehetsa netefatso ea R&D bakeng sa litsi tsa lipatlisiso le likhoebo, e khutsufatsa lipotoloho tsa nts'etsopele.
4. Boeletsi ba Tekheniki: Litharollo tsa ho tloha qetellong ho isa qetellong ho tloha khethong ea thepa ho isa ntlafatsong ea ts'ebetso, ho thusa bareki ho hlola liphephetso tsa ts'ebetso ea SiC.
Ebang ke bakeng sa tlhahiso e kgolo kapa ho iketsetsa dintho ka boikgethelo, ditshebeletso tsa rona tsa substrate tsa SiC tsa di-inch tse 12 di tsamaellana le ditlhoko tsa projeke ya hao, di matlafatsa kgatelopele ya theknoloji.