Sekoahelo sa SIC sa lisenthimithara tse 12 sa silicon carbide prime grade bophara 300mm boholo bo boholo 4H-N E loketse ho qhala mocheso oa sesebelisoa se nang le matla a mangata

Tlhaloso e Khutšoanyane:

Substrate ea silicon carbide ea lisenthimithara tse 12 (substrate ea SiC) ke substrate ea thepa ea semiconductor e kholo, e sebetsang hantle e entsoeng ka kristale e le 'ngoe ea silicon carbide. Silicon carbide (SiC) ke thepa ea semiconductor e nang le lekhalo le leholo la sehlopha se seholo e nang le thepa e ntle ea motlakase, mocheso le mechini, e sebelisoang haholo tlhahisong ea lisebelisoa tsa elektroniki maemong a matla a phahameng, maqhubu a phahameng le mocheso o phahameng. Substrate ea 12-inch (300mm) ke tlhaloso e tsoetseng pele ea theknoloji ea silicon carbide, e ka ntlafatsang haholo katleho ea tlhahiso le ho fokotsa litšenyehelo.

Romella imeile ho rona

Likaroloana

Litšobotsi tsa sehlahisoa

1. Ho khanna ha mocheso o phahameng: ho khanna ha mocheso oa silicon carbide ho feta makhetlo a 3 ho feta silicon, e leng se loketseng ho qhala mocheso oa sesebelisoa se nang le matla a mangata.

2. Matla a tšimo a ho senyeha ho hoholo: Matla a tšimo a ho senyeha ho hoholo a feta silicon ka makhetlo a 10, a loketse lits'ebetso tsa khatello e phahameng.

3. Sekheo se Sephara sa Band: Sekheo sa Band ke 3.26eV (4H-SiC), se loketse bakeng sa lits'ebetso tsa mocheso o phahameng le maqhubu a phahameng.

4. Bothata bo phahameng: Bothata ba Mohs ke 9.2, bo latela daemane feela, bo hanyetsa ho tsofala hantle le matla a mechini.

5. Botsitso ba lik'hemik'hale: ho hanyetsa ho ts'enyeha ho matla, ts'ebetso e tsitsitseng mochesong o phahameng le tikolohong e thata.

6. Boholo bo boholo: substrate ea lisenthimithara tse 12 (300mm), ntlafatsa katleho ea tlhahiso, fokotsa litšenyehelo tsa yuniti.

7. Bongata ba sekoli bo tlase: theknoloji ea kholo ea kristale e le 'ngoe ea boleng bo holimo ho netefatsa bongata ba sekoli bo tlase le botsitso bo phahameng.

Tataiso ea kopo ea mantlha ea sehlahisoa

1. Lisebelisoa tsa motlakase:

Li-Mosfet: Li sebelisoa likoloing tsa motlakase, li-drive tsa liindasteri le li-converter tsa motlakase.

Diode: tse kang diode tsa Schottky (SBD), tse sebediswang bakeng sa ho lokisa le ho fetola phepelo ya motlakase ka katleho.

2. Lisebelisoa tsa Rf:

Seholisa-molumo sa motlakase sa Rf: se sebelisoa liteisheneng tsa motheo tsa puisano tsa 5G le puisanong ea sathelaete.

Disebediswa tsa microwave: E loketse ditsamaiso tsa radar le tsa puisano tse se nang mohala.

3. Likoloi tse ncha tsa eneji:

Mekhoa ea ho khanna motlakase: balaoli ba li-engine le li-inverter bakeng sa likoloi tsa motlakase.

Qubu ea ho tjhaja: Mojule oa motlakase bakeng sa lisebelisoa tsa ho tjhaja ka potlako.

4. Likopo tsa indasteri:

Inverter ea motlakase o phahameng: bakeng sa taolo ea enjene ea indasteri le tsamaiso ea matla.

Gridi e bohlale: Bakeng sa phetiso ea HVDC le li-transformer tsa motlakase.

5. Sefofane:

Lisebelisoa tsa elektroniki tse nang le mocheso o phahameng: li loketse libaka tse nang le mocheso o phahameng tsa lisebelisoa tsa lifofane.

6. Lefapha la lipatlisiso:

Patlisiso e pharaletseng ea semiconductor ea bandgap: bakeng sa nts'etsopele ea thepa le lisebelisoa tse ncha tsa semiconductor.

Karoloana ea silicon carbide ea lisenthimithara tse 12 ke mofuta oa karoloana ea thepa ea semiconductor e sebetsang hantle e nang le thepa e ntle haholo e kang ho tsamaisa mocheso o phahameng, matla a tšimo a ho senyeha ho hoholo le lekhalo le pharaletseng la lebanta. E sebelisoa haholo lielektronikeng tsa motlakase, lisebelisoa tsa maqhubu a seea-le-moea, likoloi tse ncha tsa matla, taolo ea indasteri le lifofane, 'me ke thepa ea bohlokoa ho khothaletsa nts'etsopele ea moloko o latelang oa lisebelisoa tsa elektroniki tse sebetsang hantle le tse matla haholo.

Leha di-substrate tsa silicon carbide hajoale di na le ditshebediso tse fokolang tse tobileng di-elektroniki tsa bareki tse kang digalase tsa AR, bokgoni ba tsona tsamaisong e sebetsang hantle ya matla le di-elektroniki tse nyane di ka tshehetsa ditharollo tse bobebe, tsa phepelo ya motlakase e sebetsang hantle bakeng sa disebediswa tsa AR/VR tsa nakong e tlang. Hona jwale, ntshetsopele e kgolo ya substrate ya silicon carbide e shebane le masimo a diindasteri a kang dikoloi tse ntjha tsa eneji, meralo ya motheo ya puisano le othomathike ya diindasteri, mme e kgothaletsa indasteri ya semiconductor ho ntshetsa pele ka tsela e sebetsang hantle le e tshepahalang.

XKH e ikemiselitse ho fana ka li-substrate tsa SIC tsa boleng bo holimo tse 12 "tse nang le tšehetso le lits'ebeletso tse felletseng tsa tekheniki, ho kenyeletsoa:

1. Tlhahiso e etselitsoeng motho ka mong: Ho ea ka litlhoko tsa bareki ho fana ka resistivity e fapaneng, tataiso ea kristale le substrate ea kalafo ea holim'a metsi.

2. Ntlafatso ea ts'ebetso: Fana ka tšehetso ea tekheniki bakeng sa kholo ea epitaxial, tlhahiso ea lisebelisoa le lits'ebetso tse ling ho ntlafatsa ts'ebetso ea sehlahisoa.

3. Teko le setifikeiti: Fana ka tlhahlobo e tiileng ea liphoso le setifikeiti sa boleng ho netefatsa hore substrate e fihlela maemo a indasteri.

Tšebelisano-'moho ea 4.R&D: Kopanelang ho nts'etsapele lisebelisoa tse ncha tsa carbide ea silicon le bareki ho khothaletsa boqapi ba theknoloji.

Chate ea lintlha

Tlhaloso ea Substrate ea Silicon Carbide (SiC) ea lisenthimithara tse 1 2
Sehlopha		Tlhahiso ea ZeroMPD Sehlopha (Kereiti ea Z)	Tlhahiso e Tloaelehileng Sehlopha (Kereiti ea P)		Sehlopha sa Mashano (Kereiti ea D)
Bophara		3 0 0 mm~305mm
Botenya	4H-N	750μm±15 μm	750μm±25 μm
	4H-SI	750μm±15 μm	750μm±25 μm
Boikutlo ba Wafer		Mothapo o sa sebetseng: 4.0° ho ya ho <1120 >±0.5° bakeng sa 4H-N, Mothapo o sa sebetseng: <0001>±0.5° bakeng sa 4H-SI
Botebo ba Micropipe	4H-N	≤0.4cm-2	≤4cm-2		≤25cm-2
	4H-SI	≤5cm-2	≤10cm-2		≤25cm-2
Ho hanyetsa	4H-N	0.015~0.024 Ω·cm			0.015~0.028 Ω·cm
	4H-SI	≥1E10 Ω·cm			≥1E5 Ω·cm
Boikutlo ba Motheo bo bataletseng		{10-10} ±5.0°
Bolelele ba Sephara ba Motheo	4H-N	Ha e eo
	4H-SI	Notch
Ho se kenyeletsoe ha Moeli		3 mm
LTV/TTV/Seqha/Sekotwana		≤5μm/≤15μm/≤35 μm/≤55 μm			≤5μm/≤15μm/≤35 □ μm/≤55 □ μm
Ho ba le makukuno		Ra≤1 nm ea Poland
		CMP Ra≤0.2 nm			Ra≤0.5 nm
Mapetso a Moeli ka Leseli le Matla a Phahameng Lipoleiti tsa Hex ka Leseli le Phahameng la Matla Libaka tsa Polytype ka Leseli le Matla a Phahameng Ho kenyeletsoa ha Khabone e Bonahalang Ho ngoatheloa ha bokaholimo ba Silicon ke Leseli le Matla a Phahameng		Ha ho letho Sebaka se bokellaneng ≤0.05% Ha ho letho Sebaka se bokellaneng ≤0.05% Ha ho letho			Bolelele bo bokellaneng ≤ 20 mm, bolelele bo le bong ≤2 mm Sebaka se bokellaneng ≤0.1% Sebaka se bokellaneng ≤3% Sebaka se bokellaneng ≤3% Bolelele bo bokellaneng ≤1 × bophara ba wafer
Li-chips tsa Edge ka Leseli le Phahameng la Matla		Ha ho letho le dumelletsweng bophara le botebo ba ≥0.2mm			7 e lumelletsoe, ≤1 mm ka 'ngoe
(TSD) Ho qhaqha ha sekurufu sa khoele		≤500 cm-2		Ha e eo
(BPD) Ho falla ha sefofane sa motheo		≤1000 cm-2		Ha e eo
Tšilafalo ea Bokaholimo ba Silicon ke Leseli le Matla a Phahameng		Ha ho letho
Sephutheloana		Cassette ea wafer e nang le li-multi-wafer kapa setshelo se le seng sa wafer
Lintlha:
1 Meeli ea liphoso e sebetsa holim'a wafer eohle ntle le sebaka se ka thoko se ka thoko. 2Maqeba a lokela ho hlahlojwa sefahlehong sa Si feela. 3 Lintlha tsa ho falla li tsoa feela ho li-wafer tse betliloeng tsa KOH.

XKH e tla tswela pele ho tsetela dipatlisisong le ntshetsopeleng ho kgothaletsa katleho ya di-substrate tsa silicon carbide tsa di-inch tse 12 ka boholo bo boholo, diphoso tse tlase le botsitso bo hodimo, ha XKH e ntse e hlahloba ditshebediso tsa yona dibakeng tse ntseng di hlaha tse kang di-elektroniki tsa bareki (jwalo ka di-module tsa motlakase bakeng sa disebediswa tsa AR/VR) le dikhomphutha tsa quantum. Ka ho fokotsa ditjeo le ho eketsa bokgoni, XKH e tla tlisa katleho indastering ya semiconductor.