Li-wafer tsa SiC tsa lisenthimithara tse 2, tse nang le li-substrate tse 6H kapa tse 4H tse sa thibeleng mocheso ka ho feletseng, Dia 50.8mm

Li-wafer tsa SiC tsa lisenthimithara tse 2, tse nang le li-substrate tse sa thibeleng mocheso tsa SiC tse 6H kapa 4H, tse nang le Diameter ea 50.8mm. Setšoantšo se Hlahisitsoeng

Tlhaloso e Khutšoanyane:

Silicon carbide (SiC) ke motsoako oa binary oa Sehlopha sa IV-IV, ke motsoako o tiileng o tsitsitseng feela Sehlopha sa IV sa Tafole ea Lintho tsa Nako le Nako, Ke semiconductor ea bohlokoa. SiC e na le thepa e ntle ea mocheso, ea mechine, ea lik'hemik'hale le ea motlakase, e leng se etsang hore e be e 'ngoe ea thepa e ntle ka ho fetisisa ea ho etsa lisebelisoa tsa elektroniki tse nang le mocheso o phahameng, maqhubu a phahameng le tse matla haholo.

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Likaroloana

Tšebeliso ea substrate ea silicon carbide

Karoloana ea silicon carbide e ka aroloa ka mofuta oa conductive le mofuta oa semi-insulation ho latela resistivity. Lisebelisoa tsa silicon carbide tse tsamaisang motlakase li sebelisoa haholo-holo likoloing tsa motlakase, tlhahiso ea motlakase oa photovoltaic, lipalangoang tsa terene, litsi tsa data, ho tjhaja le meralo e meng ea motheo. Indasteri ea likoloi tsa motlakase e na le tlhoko e kholo ea likaroloana tsa silicon carbide tse tsamaisang motlakase, 'me hajoale, lik'hamphani tse ling tsa Tesla, BYD, NIO, Xiaopeng le likoloi tse ling tse ncha tsa eneji li rerile ho sebelisa lisebelisoa kapa li-module tse arohaneng tsa silicon carbide.

Disebediswa tsa carbide ya silicon e sa keneng mochesong di sebediswa haholoholo dikgokahanong tsa 5G, dikgokahanong tsa dikoloi, ditshebedisong tsa tshireletso ya naha, phetisong ya data, difofaneng le mafapheng a mang. Ka ho hodisa lera la gallium nitride epitaxial hodima substrate ya carbide ya silicon e sa keneng mochesong, wafer ya gallium nitride epitaxial e thehilweng hodima silicon e ka etswa hape hore e be disebediswa tsa microwave RF, tse sebediswang haholoholo tshimong ya RF, tse kang di-amplifier tsa matla kgokahanong ya 5G le di-radio detector tshireletsong ya naha.

Tlhahiso ea lihlahisoa tsa substrate ea silicon carbide e kenyelletsa nts'etsopele ea lisebelisoa, tlhahiso ea thepa e tala, kholo ea kristale, ho seha kristale, ts'ebetso ea wafer, ho hloekisa le ho leka, le lihokelo tse ling tse ngata. Mabapi le thepa e tala, indasteri ea Songshan Boron e fana ka thepa e tala ea silicon carbide bakeng sa 'maraka,' me e fihletse thekiso e nyane ea sehlopha. Thepa ea semiconductor ea moloko oa boraro e emeloang ke silicon carbide e bapala karolo ea bohlokoa indastering ea sejoale-joale, ka ho potlakisa ho kenella ha likoloi tse ncha tsa matla le lits'ebetso tsa photovoltaic, tlhoko ea substrate ea silicon carbide e haufi le ho tlisa ntlha ea ho phahama.