Li-wafer tsa substrate tsa 3inch 76.2mm 4H-Semi SiC tse nang le Silicon Carbide tse nyelisang hanyane

Wafer ea substrate ea 3inch 76.2mm 4H-Semi SiC ea Silicon Carbide Li-wafer tsa SiC tse se nang litšoso Setšoantšo se Hlahisitsoeng

Tlhaloso e Khutšoanyane:

Wafer ea boleng bo holimo ea SiC ea kristale e le 'ngoe (Silicon Carbide) ho ea indastering ea elektroniki le ea optoelectronic. Wafer ea SiC ea 3inch ke thepa ea moloko o latelang ea semiconductor, li-wafer tsa silicon-carbide tse thibelang mocheso tse bophara ba lisenthimithara tse 3. Li-wafer tsena li etselitsoe ho etsa lisebelisoa tsa motlakase, RF le tsa optoelectronic.

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Tlhaloso ea Sehlahisoa

Li-wafer tsa substrate tsa 4H tse se nang insulation ea SiC (silicon carbide) tse 3-inch ke thepa ea semiconductor e sebelisoang haholo. 4H e bontša sebopeho sa kristale ea tetrahexahedral. Semi-insulation e bolela hore substrate e na le litšobotsi tse phahameng tsa ho hanyetsa 'me e ka aroloa ka tsela e itseng ho phallo ea motlakase.

Li-wafer tse joalo tsa substrate li na le litšobotsi tse latelang: ho tsamaisa mocheso ka bongata, tahlehelo e tlase ea ho tsamaisa mocheso, ho hanyetsa mocheso o phahameng haholo, le botsitso bo botle ba mechine le lik'hemik'hale. Hobane carbide ea silicon e na le sekheo se seholo sa matla 'me e ka mamella mocheso o phahameng le maemo a phahameng a tšimo ea motlakase, li-wafer tsa 4H-SiC tse nang le insulation e tlase li sebelisoa haholo lisebelisoa tsa motlakase tsa motlakase le tsa maqhubu a seea-le-moea (RF).

Litšebeliso tse ka sehloohong tsa li-wafer tse nang le insulation e tlase ea 4H-SiC li kenyelletsa:

1--Elektroniki tsa motlakase: Li-wafer tsa 4H-SiC li ka sebelisoa ho etsa lisebelisoa tsa ho fetola motlakase tse kang MOSFET (Metal Oxide Semiconductor Field Effect Transistors), IGBTs (Insulated Gate Bipolar Transistors) le Schottky diodes. Lisebelisoa tsena li na le tahlehelo e tlase ea ho tsamaisa motlakase le ho fetola motlakase libakeng tse phahameng tsa motlakase le mocheso o phahameng 'me li fana ka bokhoni le ts'epo e phahameng.

2--Disebediswa tsa Maqhubu a Radio (RF): Di-wafer tsa 4H-SiC tse nang le insulation e tlase di ka sebediswa ho etsa di-amplifier tsa matla a phahameng, tse nang le maqhubu a phahameng a RF, di-resistors tsa chip, di-filters le disebediswa tse ding. Carbide ya silicon e na le tshebetso e betere ya maqhubu a phahameng le botsitso ba mocheso ka lebaka la sekgahla sa yona se seholo sa ho tjhesa ha di-electron le ho tsamaisa mocheso ho hoholo.

3--Disebediswa tsa Optoelectronic: Di-wafer tsa 4H-SiC tse nang le insulation e tlase di ka sebediswa ho etsa di-diode tsa laser tse matla haholo, di-detector tsa mabone a UV le dipotoloho tse kopaneng tsa optoelectronic.

Mabapi le tataiso ea 'maraka, tlhoko ea li-wafer tse nang le insulation e sa fetoheng ea 4H-SiC e ntse e eketseha ka masimo a ntseng a hola a lisebelisoa tsa motlakase, RF le optoelectronics. Sena se bakoa ke taba ea hore carbide ea silicon e na le mefuta e mengata ea lits'ebetso, ho kenyeletsoa le ts'ebeliso e ntle ea matla, likoloi tsa motlakase, matla a nchafatsoang le puisano. Nakong e tlang, 'maraka oa li-wafer tse nang le insulation e sa fetoheng ea 4H-SiC o ntse o tšepisa haholo 'me ho lebelletsoe hore o tla nkela thepa ea silicon e tloaelehileng sebaka lits'ebetsong tse fapaneng.