4H-N 8 inch SiC substrate wafer Silicon Carbide Dummy Research grade 500um botenya

Tlhaloso e Khutšoanyane:

Li-wafer tsa silicon carbide li sebelisoa lisebelisoa tsa elektroniki tse kang li-diode tsa motlakase, li-MOSFET, lisebelisoa tsa microwave tse matla a phahameng, le li-transistors tsa RF, e leng se nolofalletsang phetoho e sebetsang ea matla le taolo ea matla. Li-wafer tsa SiC le li-substrate li boetse li sebelisoa lisebelisoa tsa elektroniki tsa likoloi, litsamaisong tsa lifofane le mahlale a matla a nchafatsoang.


Likaroloana

U Khetha Li-Wafer tsa Silicon Carbide le Li-substrate tsa SiC Joang?

Ha o kgetha di-wafer tsa silicon carbide (SiC) le di-substrate, ho na le dintlha tse mmalwa tseo o lokelang ho di nahana. Mona ke dintlha tse ding tsa bohlokwa:

Mofuta oa Thepa: Fumana mofuta oa thepa ea SiC e lumellanang le ts'ebeliso ea hau, joalo ka 4H-SiC kapa 6H-SiC. Sebopeho sa kristale se sebelisoang haholo ke 4H-SiC.

Mofuta oa Doping: Etsa qeto ea hore na u hloka substrate ea SiC e nang le doping kapa e sa senyeheng. Mefuta e tloaelehileng ea doping ke mofuta oa N (n-doped) kapa mofuta oa P (p-doped), ho latela litlhoko tsa hau tse ikhethileng.

Boleng ba kristale: Lekola boleng ba kristale ba di-wafer tsa SiC kapa di-substrate. Boleng bo lakatsehang bo laolwa ke diparamente tse kang palo ya diphoso, tjhebahalo ya kristale, le ho ba thata ha bokahodimo.

Bophara ba Wafer: Khetha boholo bo loketseng ba wafer ho latela ts'ebeliso ea hau. Boholo bo tloaelehileng bo kenyelletsa lisenthimithara tse 2, lisenthimithara tse 3, lisenthimithara tse 4, le lisenthimithara tse 6. Ha bophara bo le boholo, u ka fumana chai e ngata ka wafer.

Botenya: Nahana ka botenya bo lakatsehang ba di-wafer tsa SiC kapa di-substrate. Dikgetho tse tlwaelehileng tsa botenya di tloha ho di-micrometer tse mmalwa ho isa ho di-micrometer tse makgolo a mmalwa.

Tsela ea ho Lebisa: Fumana tsela ea ho shebana le kristale e lumellanang le litlhoko tsa kopo ea hau. Tsela e tloaelehileng ea ho shebana le kristale e kenyelletsa (0001) bakeng sa 4H-SiC le (0001) kapa (0001̅) bakeng sa 6H-SiC.

Qetello ea Bokaholimo: Hlahloba qetello ea bokaholimo ba li-wafer kapa li-substrate tsa SiC. Bokaholimo bo lokela ho ba bo boreleli, bo bentšitsoeng, 'me bo se na maqeba kapa litšila.

Botumo ba Mofani: Khetha mofani ea nang le botumo bo botle ea nang le boiphihlelo bo boholo ba ho hlahisa li-wafer tsa SiC tsa boleng bo holimo le li-substrate. Nahana ka lintlha tse kang bokhoni ba tlhahiso, taolo ea boleng, le litlhahlobo tsa bareki.

Litšenyehelo: Nahana ka litlamorao tsa litšenyehelo, ho kenyeletsoa theko ka wafer kapa substrate le litšenyehelo life kapa life tse ling tsa ho iketsetsa.

Ho bohlokoa ho hlahloba lintlha tsena ka hloko le ho buisana le litsebi tsa indasteri kapa bafepedi ho netefatsa hore li-wafer le li-substrate tse khethiloeng tsa SiC li fihlela litlhoko tsa hau tse ikhethileng tsa ts'ebeliso.

Setšoantšo se qaqileng

4H-N 8 inch SiC substrate wafer Silicon Carbide Dummy Research grade 500um botenya (1)
4H-N 8 inch SiC substrate wafer Silicon Carbide Dummy Research grade 500um botenya (2)
4H-N 8 inch SiC substrate wafer Silicon Carbide Dummy Research grade 500um botenya (3)
4H-N 8 inch SiC substrate wafer Silicon Carbide Dummy Research grade 500um botenya (4)

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