4H-N Mofuta oa SiC Epitaxial Wafer High Voltage Frequency

Setšoantšo se Hlahisitsoeng sa 4H-N SiC Epitaxial Wafer High Voltage High Frequency

Tlhaloso e Khutšoanyane:

Ha liindasteri li ntse li tsoela pele ho sebetsa hantle haholo, li-module tsa motlakase o kopaneng, le ts'ebetso ea maemo a feteletseng, SiC Epitaxial Wafer e hlahile e le thepa e fetolang bakeng sa li-semiconductor tsa moloko o latelang. SiC Epitaxial Wafer, e entsoeng ka lera la silicon carbide le holisitsoeng ka epitaxial holim'a substrate ea SiC, e nolofalletsa ts'ebetso ea motlakase le ea mocheso e e-so ka e bonoa. Ho tloha ho li-converter tsa motlakase o phahameng ho ea ho li-grid tse bohlale, theknoloji ea SiC Epitaxial Wafer e bapala karolo ea bohlokoa ho bōpeng bocha sebaka sa elektroniki.

Meaho ea SiC Epitaxial Wafer e sebelisetsoa ho etsa lisebelisoa tse sebetsang hantle tse ka sebetsanang le motlakase o feteletseng le maqhubu a motlakase ha ka nako e ts'oanang li fokotsa tahlehelo ea matla le khatello ea mocheso. Sena se etsa hore SiC Epitaxial Wafer e be ea bohlokoa bakeng sa lits'ebetso tsa bohlokoa ba matla.

Romella imeile ho rona

Likaroloana

Setšoantšo se qaqileng

Kakaretso

Sebopeho le Sebopeho

Khopolo-taba ea mantlha ea SiC Epitaxial Wafer e lutse kholong ea eona ea epitaxial—mokhoa oa ho beha lera la kristale le etsisang sebopeho sa lattice sa substrate e ka tlase. Tabeng ea SiC Epitaxial Wafer, lera lena hangata le tšeloa ka naetrojene kapa aluminium ho theha liprofaele tsa conductivity ea mofuta oa n kapa oa mofuta oa p, ho latela litlhoko tsa sesebelisoa.

Ho etsoa ha SiC Epitaxial Wafer hangata ho kenyeletsa:

Ho Hloekisa Bokaholimo: Karoloana ea SiC e hloekisoa ka lik'hemik'hale le ka mechine ho felisa tšilafalo le ho netefatsa hore e lula ka mokhoa o ts'oanang.
Khōlo ea Epitaxial: Lera la carbide ea silicon e nang le sekoli se tlase le kenngoa ka ho sebelisa li-reactor tsa CVD tse bataletseng kapa tse otlolohileng tlas'a maemo a bohloeki bo phahameng haholo.
Taolo e Nepahetseng ea ho Sebelisa Meriana e Fokotsang Meriana: Ka ho fetola dikarolelano tsa phallo ya kgase ya di-dopants tse kang naetrojene (n-type) kapa aluminium (p-type), dibopeho tsa motlakase tsa SiC Epitaxial Wafer di ka lokiswa hantle.
Ho Thibela Sekoli ka ho Phethahetseng: Ka ntlafatso ea ts'ebetso, liphaephe tse nyane le ho falla ka har'a SiC Epitaxial Wafer lia fokotsoa ho ntlafatsa ts'epo ea sesebelisoa.

Boleng ba SiC Epitaxial Wafer bo lekanngoa ka diparamente tse kang bophelo ba carrier, ho tshwana ha resistivity, ho ba thata ha bokaholimo, le ho se tsitse ha basal plane (BPD).

Tlhaloso

Paramethara	Tlhaloso
Lihlopha	Saense ea Lisebelisoa, Li-substrate tsa kristale e le 'Ngoe
Mofuta oa Polytype	4H
Ho sebelisa lithethefatsi	Mofuta oa N
Bophara	101 mm
Mamello ea bophara	± 5%
Botenya	0.35 mm
Mamello ea Botenya	± 5%
Bolelele ba Sephara ba Motheo	22 mm (± 10%)
TTV (Phetoho ea Botenya Bohle)	≤10 µm
Koahela	≤25 µm
FWHM	≤30 Arc-sec
Qetello ea Bokaholimo	Rq ≤0.35 nm

Likopo tsa Liindasteri

Ho ata ha SiC Epitaxial Wafer liindastering tse fapaneng ho bontša bohlokoa ba eona ba maano:

Li-inverter tsa ho hula motlakase ka har'a li-EV: Tšebeliso ea SiC Epitaxial Wafer e nolofalletsa li-converter tsa motlakase tse nyane, tse sebetsang hantle haholoanyane, tse atolosang sebaka sa ho khanna.
Phetiso ea DC ea Motlakase o Phahameng: Dikarolo tsa SiC Epitaxial Wafer di tshehetsa di-module tsa matla tsa sehlopha sa 3.3kV ho isa ho 15kV ka tahlehelo e nyane.
Lisebelisoa tsa Bongaka: Li-semiconductor tse thehiloeng ho SiC Epitaxial Wafer tse tšepahalang haholo li fumanoa mehloling ea motlakase ea MRI le lisebelisoa tsa tlhahlobo.
Litsi tsa Lintlha: Taolo ea motlakase le pholiso li ntlafalitsoe haholo ho sebelisoa theknoloji ea SiC Epitaxial Wafer.
Mekhoa ea Radar ea Tšireletso: Ka lebaka la ho thatafala ha mahlaseli le bokgoni ba ho fetola ka potlako, thepa ya SiC Epitaxial Wafer e loketse di-platform tsa radar le sathelaete.

Sejana se seng le se seng sa SiC Epitaxial Wafer se hlahisitsoeng se sebetsa e le motheo oa lisebelisoa tse kang MOSFET, JFET, Schottky diode, le li-module tsa hybrid litsamaisong tse sebetsang hantle haholo.

Melemo ea Tlholisano

Theknoloji ea SiC Epitaxial Wafer e na le melemo e 'maloa ea theknoloji le ea khoebo ho feta mekhoa e meng ea silicon le gallium arsenide:

Matla a Phahameng a Tšimo ea Motlakase: SiC Epitaxial Wafer e tshehetsa matla a bohlokwa a tshimo a ~3 MV/cm — a phahame haholo ho feta silicon.
Sekheo se Sephara sa Band (~3.26 eV): E fana ka botsitso ba mocheso, e loketse di-module tsa sefofane le tsa dikoloi.
Litlhoko tsa ho Pholisa tse Fokolitsoeng: Disistimi tse thehilweng ho SiC Epitaxial Wafer di hlahisa mocheso o monyane, e leng se fokotsang tlhoko ya disinki tse matla tsa mocheso.
Bokgoni bo Eketsehileng: Motlakase o fokolang o hanyetsang le o dutlang o thusa ho fokotsa tahlehelo yohle ya sistimi.
Miniaturization: Likarolo tse nyane tse hahiloeng ka SiC Epitaxial Wafer li nolofalletsa meralo ea sistimi e bobebe le e teteaneng.

Ho feta moo, tlhahlobo ea potoloho ea bophelo e bontša hore ho amohela litsamaiso tsa motlakase tse thehiloeng ho SiC Epitaxial Wafer ho ka fokotsa tšebeliso ea matla le mesi e tsoang nakong ea bophelo ba sehlahisoa.

Mekhoa ea 'Maraka le Pono ea Tlhahiso

Tlhoko ea lihlahisoa tsa SiC Epitaxial Wafer e bone kholo e kholo. Ho latela likhakanyo tsa morao tjena tsa indasteri, 'maraka oa lefats'e oa SiC Epitaxial Wafer o lebelletsoe ho feta $3 bilione ka 2028. Ka keketseho ea wafer ea lisenthimithara tse 6 le lisenthimithara tse 8 e ntseng e ata haholo, bahlahisi ba tsetela bokhoning ba reactor, tlhokomelo ea kahare ho sebaka, le litsamaiso tsa taolo ea boleng tse thehiloeng ho AI.

Ho phaella moo, kopanyo e otlolohileng e se e fetoha leano la bohlokoa—baetsi ba bang ba disebediswa jwale ba hlahisa SiC Epitaxial Wafer ya bona ho netefatsa phepelo ya thepa le botsitso.

Lipotso Tse Botsoang Khafetsa (Lipotso Tse Botsoang Khafetsa)

P1: Ke hobane'ng ha u khetha SiC Epitaxial Wafer ho feta li-wafer tsa silicon tse tloaelehileng?
SiC Epitaxial Wafer e fana ka mamello e phahameng ea mocheso, bokhoni bo phahameng ba motlakase, le ts'ebeliso e ntle ea matla lits'ebetsong tsa ho fetola.

P2: Na di-wafer tsa SiC Epitaxial tsa di-inch tse 8 di fumaneha kgwebong?
Leha di-wafer tsa lisenthimithara tse 4 le tse 6 li sebelisoa haholo, bahlahisi ba 'maloa ba ntse ba leka tlhahiso ea SiC Epitaxial Wafer ea lisenthimithara tse 8 bakeng sa tlhoko e phahameng.

P3: Ke mamello efe e tloaelehileng ea botenya ba lera la epitaxial?
Hangata mamello ke ±1 μm bakeng sa mekhahlelo e mesesaane le ho fihlela ho ±5 μm bakeng sa mekhahlelo e teteaneng, ho latela sekhahla sa kgolo le sebopeho sa reactor.

P4: Liphoso li fumanoa joang ho SiC Epitaxial Wafer?
Lisebelisoa tse tsoetseng pele tsa metrology tse kang KOH etching, XRD, le PL mapping li sebelisoa ho khetholla le ho lekanya liphoso.

P5: Na SiC Epitaxial Wafer e ka etsoa bakeng sa liprofaele tse itseng tsa resistivity le doping?
E, tlhahiso ea SiC Epitaxial Wafer e ikhethileng e tšehetsa maemo a mangata a doping (ho tloha ho 1E14 ho isa ho 1E19 cm⁻³) ho lumellana le meralo e fapaneng ea lisebelisoa.

P6: Ke lintlha life tse amang theko ea SiC Epitaxial Wafer?
Theko e susumetsoa ke boleng ba substrate, botenya ba epitaxial, ho nepahala ha doping, le mahlale a taolo ea liphoso.

P7: Ketane ea phepelo e fetoha joang bakeng sa SiC Epitaxial Wafer?
Matsete a maholo a ntse a etsoa lefatšeng ka bophara kholong ea kristale ea SiC, ho bentša substrate, le mela ea epitaxy ho holisa tlhahiso le ho fokotsa litšenyehelo.

E fetileng: Sejana sa SiC Epitaxial bakeng sa Lisebelisoa tsa Matla – 4H-SiC, mofuta oa N, Botenya bo Fokolang

E 'ngoe: Mochini oa ho Tšoaea oa Faeba Laser o Ngotsoeng ka ho Sebetsa bakeng sa Litšepe tsa Liindasteri tsa Plastiki