Li-wafer tsa Epitaxial tsa 4H-SiC bakeng sa li-MOSFET tsa Motlakase o Phahameng ka ho Fetisisa (100–500 μm, lisenthimithara tse 6)
Setšoantšo se qaqileng
Kakaretso ea Sehlahisoa
Khōlo e potlakileng ea likoloi tsa motlakase, li-grid tse bohlale, litsamaiso tsa matla a nchafatsoang, le lisebelisoa tsa indasteri tse matla haholo li bakile tlhoko e potlakileng ea lisebelisoa tsa semiconductor tse khonang ho sebetsana le li-voltage tse phahameng, matla a mangata a matla, le bokhoni bo boholo. Har'a li-semiconductor tse nang le lekhalo le leholo,khabide ea silicon (SiC)e hlahella ka lebaka la lekhalo la eona le leholo la motlakase, ho khanna mocheso o phahameng, le matla a maholo a motlakase a bohlokoa.
Ea ronaLi-wafer tsa epitaxial tsa 4H-SiCli entsoe ka mokhoa o khethehileng bakeng saLisebelisoa tsa MOSFET tsa motlakase o phahameng haholoKa mekhahlelo ea epitaxial e tlohang ho100 μm ho isa ho 500 μm on Li-substrate tsa lisenthimithara tse 6 (150 mm), di-wafer tsena di fana ka dibaka tse atolositsweng tsa ho tjheseletsa tse hlokahalang bakeng sa disebediswa tsa sehlopha sa kV ha ka nako e ts'oanang di boloka boleng bo ikgethang ba kristale le bokgoni ba ho hola. Botenya bo tlwaelehileng bo kenyeletsa 100 μm, 200 μm, le 300 μm, mme ho na le mokhoa wa ho iketsetsa o fumanehang.
Botenya ba Lera la Epitaxial
Lera la epitaxial le bapala karolo ea bohlokoa ho khetholleng ts'ebetso ea MOSFET, haholo-holo tekano pakeng tsamotlakase oa ho senyehalee sa haneleng.
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100–200 μm: E ntlafalitsoe bakeng sa li-MOSFET tsa motlakase o mahareng ho isa ho o phahameng, e fanang ka tekano e ntle ea bokhoni ba ho tsamaisa motlakase le matla a ho thibela.
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200–500 μm: E loketse disebediswa tsa motlakase o phahameng haholo (10 kV+), e leng se nolofalletsang dibaka tse telele tsa ho phaphamala bakeng sa dibopeho tse matla tsa ho senyeha.
Ho pholletsa le mefuta eohle,ho lekana ha botenya ho laoloa ka hare ho ±2%, ho netefatsa botsitso ho tloha ho wafer ho ea ho wafer le sehlopha se seng ho ea ho se seng. Ho tenyetseha hona ho lumella baqapi ho ntlafatsa ts'ebetso ea sesebelisoa bakeng sa lihlopha tsa bona tsa motlakase tse reretsoeng ha ba ntse ba boloka mokhoa oa ho ikatisa hape tlhahisong ea bongata.
Mokhoa oa Tlhahiso
Li-wafer tsa rona li etsoa ka ho sebelisaepitaxy ea sejoale-joale ea CVD (Chemical Vapor Deposition), e leng se nolofalletsang taolo e nepahetseng ea botenya, tšebeliso ea lithethefatsi, le boleng ba kristale, esita le bakeng sa mealo e teteaneng haholo.
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Epitaxy ea CVD– Likhase tse hloekileng haholo le maemo a ntlafalitsoeng li netefatsa libaka tse boreleli le ho se be le sekoli se lekaneng.
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Khōlo e Teteaneng ea Lera– Diresepe tsa tshebetso ya beng ba thepa di dumella botenya ba epitaxial ho fihlela ho500 μmka ho tšoana ho babatsehang.
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Taolo ea ho sebelisa lithethefatsi– Ho tsepamisa maikutlo ho ka fetoloang pakeng tsa1×10¹⁴ – 1×10¹⁶ cm⁻³, ka ho tšoana ho betere ho feta ± 5%.
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Tokisetso ea Bokaholimo– Li-wafer lia fetaHo bentša CMPle tlhahlobo e matla, e netefatsang ho tsamaellana le lits'ebetso tse tsoetseng pele joalo ka oxidation ea heke, photolithography, le metallization.
Melemo ea Bohlokoa
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Bokgoni ba Motlakase o Phahameng ka ho Fetisisa– Mealo e teteaneng ea epitaxial (100–500 μm) e tšehetsa meralo ea MOSFET ea sehlopha sa kV.
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Boleng bo Ikhethang ba Crystal– Ho se phutholohe ha sebaka le ho se sebetse hantle ha karolo e ka tlase ya leqhubu ho netefatsa botshepehi le ho fokotsa ho dutla ha metsi.
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Li-substrate tse kholo tsa lisenthimithara tse 6– Tšehetso bakeng sa tlhahiso e phahameng, litšenyehelo tse fokotsehileng ka sesebelisoa, le ho lumellana ha thepa ka mokhoa o motle.
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Matlotlo a Phahameng a Thermal– Ho tsamaisa mocheso ka matla a phahameng le lekhalo le leholo la leqhubu ho nolofalletsa ts'ebetso e sebetsang hantle ka matla le mocheso o phahameng.
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Liparamente tse ka fetoloang– Botenya, ho sebelisa lithethefatsi, ho shebana le ho qeta bokaholimo bo ka etsoa ho latela litlhoko tse itseng.
Litlhaloso tse Tloaelehileng
| Paramethara | Tlhaloso |
|---|---|
| Mofuta oa ho khanna | Mofuta oa N (o nang le naetrojene) |
| Ho hanyetsa | Leha e le efe |
| Angle e sa Lekaneng le Axis | 4° ± 0.5° (ho ea ho [11-20]) |
| Boikutlo ba kristale | (0001) Si-face |
| Botenya | 200–300 μm (e ka fetoloang 100–500 μm) |
| Qetello ea Bokaholimo | Ka pele: CMP e bentšitsoeng (e loketse ho beoa ka epi) Ka morao: e kobehileng kapa e bentšitsoeng |
| TTV | ≤ 10 μm |
| Seqha/Koba | ≤ 20 μm |
Libaka tsa Kopo
Li-wafer tsa epitaxial tsa 4H-SiC li loketse hantle bakeng saLi-MOSFET litsamaisong tsa motlakase o phahameng haholo, ho kenyeletsoa:
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Li-inverter tsa ho hula ha koloi ea motlakase le li-module tsa ho tjhaja tsa motlakase o phahameng
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Lisebelisoa tsa phetiso le kabo ea gridi e bohlale
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Li-inverter tsa matla a ntjhafatswang (letsatsi, moya, polokelo)
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Lisebelisoa tsa indasteri tse matla haholo le litsamaiso tsa ho fetola
LBH
P1: Mofuta oa conductivity ke ofe?
A1: Mofuta wa N, o nang le naetrojene — tekanyetso ya indasteri bakeng sa di-MOSFET le disebediswa tse ding tsa motlakase.
P2: Ke botenya bofe ba epitaxial bo fumanehang?
A2: 100–500 μm, ka dikgetho tse tloaelehileng tsa 100 μm, 200 μm, le 300 μm. Botenya bo ikgethileng bo fumaneha ha ho kopuwa.
P3: Tsela eo wafer e shebaneng le yona le sekhutlo sa off-axis ke efe?
A3: (0001) Si-face, e nang le 4° ± 0.5° off-axis ho ya ka lehlakoreng la [11-20].
Mabapi le rona
XKH e ikhethile ka nts'etsopele ea theknoloji e phahameng, tlhahiso le thekiso ea khalase e khethehileng ea mahlo le thepa e ncha ea kristale. Lihlahisoa tsa rona li sebeletsa lisebelisoa tsa elektroniki tsa mahlo, lisebelisoa tsa elektroniki tsa bareki le sesole. Re fana ka likarolo tsa mahlo tsa Sapphire, likoahelo tsa lense ea mohala oa thekeng, Ceramics, LT, Silicon Carbide SIC, Quartz, le li-wafer tsa kristale tsa semiconductor. Ka boiphihlelo bo nang le boiphihlelo le lisebelisoa tsa sejoale-joale, re ipabola ts'ebetsong ea lihlahisoa tse seng tsa maemo a holimo, re ikemiselitse ho ba khoebo e etellang pele ea theknoloji e phahameng ea lisebelisoa tsa optoelectronic.










