6 Inch 4H SEMI Type SiC composite substrate Botenya 500μm TTV≤5μm Kereiti ea MOS

Tlhaloso e Khutšoanyane:

Ka tsoelo-pele e potlakileng ea puisano ea 5G le theknoloji ea radar, substrate ea SiC e kopantsoeng ea lisenthimithara tse 6 e fetohile thepa ea mantlha bakeng sa tlhahiso ea lisebelisoa tse nang le maqhubu a phahameng. Ha e bapisoa le li-substrate tsa GaAs tsa setso, substrate ena e boloka resistivity e phahameng (>10⁸ Ω·cm) ha e ntse e ntlafatsa conductivity ea mocheso ka makhetlo a fetang 5, e sebetsana ka katleho le liphephetso tsa ho qhala mocheso lisebelisoa tsa maqhubu a millimeter. Li-amplifier tsa matla ka har'a lisebelisoa tsa letsatsi le letsatsi tse kang li-smartphone tsa 5G le li-terminal tsa puisano tsa sathelaete ho ka etsahala hore ebe li hahiloe holim'a substrate ena. Ha re sebelisa theknoloji ea rona ea "buffer layer doping compensation", re fokolitse bongata ba micropipe ho ea ka tlase ho 0.5/cm² 'me ra fumana tahlehelo e tlase haholo ea microwave ea 0.05 dB/mm.


Likaroloana

Litekanyetso tsa tekheniki

Lintho

Tlhaloso

Lintho

Tlhaloso

Bophara

150±0.2 mm

Ho ba thata ka pele (Si-face)

Ra≤0.2 nm (5μm×5μm)

Mofuta oa Polytype

4H

Edge Chip, Ho ngoapa, Ho petsoha (tlhahlobo ea pono)

Ha ho letho

Ho hanyetsa

≥1E8 Ω·cm

TTV

≤5 μm

Botenya ba lera la phetisetso

≥0.4 μm

Koahela

≤35 μm

Ha e na letho (2mm>D>0.5mm)

≤5 ka 'ngoe/Wafer

Botenya

500±25 μm

Likarolo tsa Bohlokoa

1. Tshebetso e Ikhethang ya Maqhubu a Phahameng
Substrate e kopaneng ea SiC ea lisenthimithara tse 6 e sebelisa moralo oa lera la dielectric le hlophisitsoeng ka lihlopha, ho netefatsa phetoho e sa fetoheng ea dielectric ea <2% ho Ka-band (26.5-40 GHz) le ho ntlafatsa botsitso ba mekhahlelo ka 40%. Keketseho ea 15% ea bokhoni le tšebeliso e tlase ea matla ka 20% ho li-module tsa T/R tse sebelisang substrate ena.

2. Tsamaiso ea Thermal e Tsoelang Pele
Sebopeho se ikhethang sa "borokho bo futhumatsang" se kopanyang se nolofalletsa ho tsamaisa mocheso ka lehlakoreng la 400 W/m·K. Li-moduleng tsa PA tsa setsi sa 28 GHz 5G, mocheso oa junction o nyoloha ka 28°C feela kamora lihora tse 24 tsa ts'ebetso e tsoelang pele—50°C e tlase ho feta litharollo tse tloaelehileng.

3. Boleng bo Phahameng ba Wafer
Ka mokhoa o ntlafalitsoeng oa ho Tsamaisa Mouoane oa 'Mele (PVT), re fihlela bongata ba ho falla ha lintho tse ka tlase ho 500/cm² le Phapang ea Botenya Bohle (TTV) <3 μm.
4. Ts'ebetso e Bonolo ho Tlhahiso
Mokhoa oa rona oa ho annealing ka laser o entsoeng ka ho khetheha bakeng sa substrate ea SiC e kopantsoeng ea lisenthimithara tse 6 o fokotsa bongata ba boemo ba bokaholimo ka lihlopha tse peli tsa boholo pele ho epitaxy.

Likopo tse ka Sehloohong

1. Likarolo tsa Motheo tsa Setsi sa Motheo sa 5G
Ho li-antenna tse kholo tsa MIMO, lisebelisoa tsa GaN HEMT tse holim'a li-substrate tse kopantsoeng tsa SiC tse semi-insulating tse 6-inch li fihlella matla a tlhahiso a 200W le katleho e ka holimo ho 65%. Liteko tsa tšimo ho 3.5 GHz li bontšitse keketseho ea 30% ho radius ea sekoahelo.

2. Mekhoa ea Puisano ea Sathelaete
Li-transceiver tsa sathelaete tsa Low-Earth orbit (LEO) tse sebelisang substrate ena li bontša EIRP e phahameng ka 8 dB ho sehlopha sa Q (40 GHz) ha li ntse li fokotsa boima ka 40%. Li-terminal tsa SpaceX Starlink li e sebelisitse bakeng sa tlhahiso ea bongata.

3. Mekhoa ea Radar ea Sesole
Di-module tsa T/R tsa radar tse nang le mekhahlelo e itseng karolong ena ya motheo di fihlella bandwidth ya 6-18 GHz le palo ya lerata e ka tlase ho 1.2 dB, e atolosa sebaka sa ho lemoha ka 50 km ditsamaisong tsa radar tsa temoso ya pele.

4. Radar ea Maqhubu a Millimeter-Automotive
Li-chip tsa radar tsa likoloi tsa 79 GHz tse sebelisang substrate ena li ntlafatsa qeto ea angular ho 0.5°, li fihlela litlhoko tsa ho khanna ka boikemelo tsa L4.

Re fana ka tharollo e felletseng ea tšebeletso e ikhethileng bakeng sa li-substrate tsa SiC tse kopantsoeng tse semi-insulating tse 6-inch. Mabapi le ho etsa liparamente tsa thepa ka mokhoa o ikhethileng, re tšehetsa taolo e nepahetseng ea resistivity ka har'a mefuta ea 10⁶-10¹⁰ Ω·cm. Haholo-holo bakeng sa lits'ebetso tsa sesole, re ka fana ka khetho ea khanyetso e phahameng haholo ea >10⁹ Ω·cm. E fana ka litlhaloso tse tharo tsa botenya ba 200μm, 350μm le 500μm ka nako e le 'ngoe, ka mamello e laoloang ka thata ka har'a ±10μm, e fihlelang litlhoko tse fapaneng ho tloha lisebelisoa tse nang le maqhubu a phahameng ho ea lits'ebetsong tse nang le matla a phahameng.

Mabapi le lits'ebetso tsa kalafo ea bokaholimo, re fana ka litharollo tse peli tsa profeshenale: Ho Hloekisa Mechanical ea Lik'hemik'hale (CMP) ho ka fihlella ho batalla ha bokaholimo ba athomo ka Ra<0.15nm, ho fihlela litlhoko tse batloang haholo tsa kholo ea epitaxial; Theknoloji ea kalafo ea bokaholimo e loketseng epitaxial bakeng sa litlhoko tsa tlhahiso e potlakileng e ka fana ka libaka tse boreleli haholo tse nang le Sq<0.3nm le botenya ba oxide e setseng <1nm, e leng se nolofatsang haholo ts'ebetso ea pele ho kalafo qetellong ea moreki.

XKH e fana ka ditharollo tse felletseng tse ikgethileng bakeng sa di-substrate tse kopaneng tsa SiC tse semi-insulating tsa di-inch tse 6

1. Ho iketsetsa paramethara ea thepa
Re fana ka tokiso e nepahetseng ea resistivity ka har'a mefuta e pakeng tsa 10⁶-10¹⁰ Ω·cm, ka likhetho tse ikhethileng tsa resistivity tse phahameng haholo >10⁹ Ω·cm tse fumanehang bakeng sa lits'ebetso tsa sesole/sepakapaka.

2. Litlhaloso tsa Botenya
Likhetho tse tharo tse tloaelehileng tsa botenya:

· 200μm (e ntlafalitsoe bakeng sa lisebelisoa tse nang le maqhubu a phahameng)

· 350μm (tlhaloso e tloaelehileng)

· 500μm (e etselitsoeng lits'ebetso tse matla haholo)
· Mefuta yohle e boloka mamello e tiileng ya botenya ba ±10μm.

3. Mahlale a Kalafo ea Bokaholimo

Ho Hloekisa Mekaniki ea Lik'hemik'hale (CMP): E fihlella ho batalatsa ha bokaholimo ba athomo ka Ra<0.15nm, e fihlela litlhoko tse thata tsa kholo ea epitaxial bakeng sa RF le lisebelisoa tsa motlakase.

4. Ts'ebetso ea Bokaholimo bo Loketseng ho Epi

· E fana ka libaka tse boreleli haholo tse nang le ho hlaka ha Sq<0.3nm

· E laola botenya ba oxide ea tlhaho ho fihlela ho <1nm

· E felisa mehato e fihlang ho e 3 ea pele ho ts'ebetso litsing tsa bareki

Substrate e kopaneng ea SiC e nang le semi-insulating ea lisenthimithara tse 6 1
Substrate e kopaneng ea SiC ea lisenthimithara tse 6 e sireletsang mocheso ka semi-insulation 4

  • E fetileng:
  • E 'ngoe:

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