Li-wafer tsa SiC tsa Silicon Carbide tse 8inch 200mm 4H-N mofuta oa tlhahiso ea sehlopha sa 500um botenya

Li-wafer tsa SiC tsa Silicon Carbide tse 8inch 200mm Mofuta oa 4H-N oa tlhahiso ea sehlopha sa 500um botenya Setšoantšo se Hlahisitsoeng

Tlhaloso e Khutšoanyane:

Shanghai Xinkehui Tech. Co., Ltd e fana ka khetho e ntle ka ho fetisisa le litheko bakeng sa li-wafer tsa carbide tsa silicon tsa boleng bo holimo le li-substrate tse fihlang ho bophara ba lisenthimithara tse 8 tse nang le mefuta ea N le semi-insulating. Likhamphani tse nyane le tse kholo tsa lisebelisoa tsa semiconductor le li-laboratori tsa lipatlisiso lefatšeng ka bophara li sebelisa le ho itšetleha ka li-wafer tsa rona tsa carbide tsa silicone.

Romella imeile ho rona

Likaroloana

Tlhaloso ea Substrate ea SiC ea 200mm 8inch

Boholo: 8inch;

Bophara: 200mm±0.2;

Botenya: 500um±25;

Tsela ea ho sheba bokaholimo: 4 ho ea ho [11-20]±0.5°;

Tsela ea ho shebana le li-notch:[1-100]±1°；

Botebo ba notch: 1±0.25mm；

Peipi e nyenyane: <1cm2;

Lipoleiti tsa Hex: Ha ho letho le lumelloeng;

Ho hanyetsa: 0.015~0.028Ω;

EPD:<8000cm2;

TED:<6000cm2

BPD:<2000cm2

TSD:<1000cm2

SF: sebaka<1%

TTV≤15um；

Sekoti ≤40um ；

Seqha ≤25um ；

Libaka tse ngata: ≤5%;

Ho ngoapa: <5 le Bolelele bo Kopantsweng< 1 Wafer Diameter;

Li-chips/Li-Indents: Ha ho letho le lumellang D>0.5mm Bophara le Botebo;

Mapetso: Ha ho letho;

Letheba: Ha ho letho

Moeli oa wafer: Chamfer;

Qetello ea bokaholimo: Double Side Polish, Si Face CMP;

Pakete: Cassette ea wafer e ngata kapa setshelo sa wafer se le seng;

Mathata a hajwale a ho lokisa dikristale tsa 200mm 4H-SiC tse kgolo

1) Ho lokisoa ha likristale tsa peo ea boleng bo holimo tsa 200mm 4H-SiC;

2) Taolo ea ts'ebetso ea mocheso oa boholo bo boholo e sa ts'oane le ea nucleation;

3) Bokgoni ba ho tsamaisa le ho tswela pele ha dikarolo tsa kgase ditsamaisong tsa kgolo ya kristale e kgolo;

4) Ho petsoha ha kristale le ho ata ha sekoli ho bakoang ke keketseho e kholo ea khatello ea mocheso.

Ho hlola liphephetso tsena le ho fumana li-wafer tsa SiC tsa boleng bo holimo tsa 200mm ho sisinngoa litharollo:

Mabapi le ho lokisa kristale ea peo ea 200mm, tšimo e loketseng ea phallo ea tšimo ea mocheso, le kopano e atolohang li ithutiloe 'me tsa etsoa ho ela hloko boleng ba kristale le boholo bo atolohang; Ho qala ka kristale ea 150mm SiC se:d, etsa tlhahlobo ea kristale ea peo ho atolosa butle-butle kristale ea SiC ho fihlela e fihla ho 200mm; Ka kholo ea kristale e mengata le ts'ebetso, butle-butle ntlafatsa boleng ba kristale sebakeng se atolohang sa kristale, le ho ntlafatsa boleng ba kristale ea peo ea 200mm.

Mabapi le tokisetso ea kristale e tsamaisang le substrate ea 200mm, lipatlisiso li ntlafalitse moralo oa feld le tšimo ea phallo ea mocheso bakeng sa kholo ea kristale e kholo, li tsamaisa kholo ea kristale ea SiC e tsamaisang ea 200mm, le ho laola ho tšoana ha doping. Kamora ts'ebetso e mpe le ho bopa kristale, ho ile ha fumanoa ingot ea 4H-SiC e tsamaisang motlakase ea lisenthimithara tse 8 e nang le bophara bo tloaelehileng. Kamora ho seha, ho sila, ho polisha, ho sebetsana le ho fumana li-wafer tsa SiC 200mm tse nang le botenya ba 525um kapa ho feta.