N-Mofuta oa SiC ho Si Composite Substrates Dia6inch
| 等级Kereiti | U 级 | P级 | D级 |
| Kereiti e tlase ea BPD | Kereiti ya Tlhahiso | Sehlopha sa Dummy | |
| 直径Diameter | 150.0 mm± 0.25mm | ||
| 厚度Botenya | 500 μm±25μm | ||
| 晶片方向Wafer Orientation | Off axis : 4.0° ho ea <11-20 > ±0.5° bakeng sa 4H-N Holima axis : <0001>±0.5°bakeng sa 4H-SI | ||
| 主定位边方向Primary Flat | {10-10}±5.0° | ||
| 主定位边长度Bolelele ba Phatlalatso ba Pele | 47.5 mm± 2.5 limilimithara | ||
| 边缘Kenyelletso ea moeli | 3 limilimithara | ||
| 总厚度变化/弯曲度/翘曲度 TTV/Bow /Warp | ≤15μm /≤40μm /≤60μm | ||
| 微管密度和基面位错MPD & BPD | MPD≤1 cm-2 | MPD≤5 cm-2 | MPD≤15 cm-2 |
| BPD≤1000cm-2 | |||
| 电阻率Ho hanyetsa | ≥1E5 Ω·cm | ||
| 表面粗糙度Boqhobane | Polish Ra≤1 nm | ||
| CMP Ra≤0.5 nm | |||
| 裂纹(强光灯观测) # | Ha ho letho | Bolelele bo akaretsang ≤10mm, bolelele bo le bong≤2mm | |
| Mapetso ka khanya e phahameng | |||
| 六方空洞（强光灯观测）* | Kakaretso ≤1% | Kakaretso ≤5% | |
| Hex Plates ka khanya e matla e phahameng | |||
| 多型(强光灯观测)* | Ha ho letho | Kakaretso≤5% | |
| Libaka tsa Polytype ka khanya e matla e phahameng | |||
| 划痕(强光灯观测)*& | Mekhoro e 3 ho isa ho 1 × bophara ba wafer | Mengoako e 5 ho isa ho 1 × bophara ba wafer | |
| E mengoapo ka khanya e matla haholo | bolelele bo bokellaneng | bolelele bo bokellaneng | |
| 崩边# Chip ea Edge | Ha ho letho | 5 e lumelletsoe, ≤1 mm ka 'ngoe | |
| 表面污染物 (强光灯观测） | Ha ho letho | ||
| Ho silafatsoa ke khanya e matla haholo | |||
Setšoantšo se qaqileng
