Sehlahisoa se secha sa P-type SiC substrate SiC wafer Dia2inch

Li-substrate tsa silicon carbide tsa mofuta oa P li atisa ho sebelisoa ho etsa lisebelisoa tsa motlakase, tse kang li-transistors tsa Insulate-Gate Bipolar (IGBTs).

IGBT= MOSFET+BJT, e leng switch e timang. MOSFET=IGFET(thupa ya phello ya tshimo ya semiconductor ya tshepe, kapa transistor ya phello ya tshimo ya mofuta wa heke e insulated). BJT(Bipolar Junction Transistor, e tsejwang hape e le transistor), bipolar e bolela hore ho na le mefuta e mmedi ya dijari tsa dielektrone le masoba tse amehang tshebetsong ya ho tsamaisa motlakase mosebetsing, ka kakaretso ho na le kopano ya PN e amehang ho tsamaisa motlakase.

Wafer ea silicon carbide (SiC) ea mofuta oa p ea lisenthimithara tse 2 e ka har'a polytype ea 4H kapa 6H. E na le thepa e tšoanang le ea li-wafer tsa silicon carbide (SiC) tsa mofuta oa n, tse kang ho hanyetsa mocheso o phahameng, ho khanna ha mocheso o phahameng, le ho khanna ha motlakase o phahameng. Li-substrate tsa p-type SiC li sebelisoa hangata tlhahisong ea lisebelisoa tsa motlakase, haholo-holo bakeng sa tlhahiso ea li-transistors tsa bipolar tse nang le insulated-gate (IGBTs). Moralo oa li-IGBT hangata o kenyelletsa li-junctions tsa PN, moo p-type SiC e leng molemo bakeng sa ho laola boitšoaro ba sesebelisoa.