Sejana sa SiC sa mofuta oa P 4H/6H-P 3C-N Botenya ba lisenthimithara tse 6 350 μm se nang le Orientation ea Motheo e bataletseng

Tlhaloso e Khutšoanyane:

Wafer ea mofuta oa P, 4H/6H-P 3C-N, ke thepa ea semiconductor ea lisenthimithara tse 6 e nang le botenya ba 350 μm le tataiso ea mantlha e bataletseng, e etselitsoeng lits'ebetso tse tsoetseng pele tsa elektroniki. E tsebahala ka ho tsamaisa mocheso ka matla, motlakase o phahameng oa ho senyeha, le ho hanyetsa mocheso o feteletseng le libaka tse senyang, wafer ena e loketse lisebelisoa tsa elektroniki tse sebetsang hantle. Doping ea mofuta oa P e hlahisa masoba e le lijari tsa mantlha tsa ho tjhaja, e leng se etsang hore e be e loketseng lisebelisoa tsa elektroniki tsa motlakase le tsa RF. Sebopeho sa eona se tiileng se netefatsa ts'ebetso e tsitsitseng tlas'a maemo a motlakase o phahameng le maqhubu a phahameng, e leng se etsang hore e tšoanelehe hantle bakeng sa lisebelisoa tsa motlakase, lisebelisoa tsa elektroniki tsa mocheso o phahameng, le phetoho ea matla a phahameng. Tsamaiso ea mantlha e bataletseng e netefatsa ho lumellana ho nepahetseng ts'ebetsong ea tlhahiso, e fana ka botsitso tlhahisong ea lisebelisoa.


Likaroloana

Tlhaloso4H/6H-P Mofuta oa SiC Composite Substrates Tafole ea liparamente tse tloaelehileng

6 Sekoti sa Silicon Carbide (SiC) sa bophara ba lisenthimithara tse 10 Tlhaloso

Sehlopha Tlhahiso ea MPD ha e eoSehlopha (Z) Sehlopha) Tlhahiso e TloaelehilengSehlopha (P) Sehlopha) Sehlopha sa Mashano (D Sehlopha)
Bophara 145.5 mm ~ 150.0 mm
Botenya 350 μm ± 25 μm
Boikutlo ba Wafer -OffMothapo: 2.0°-4.0° ho ya ho [1120] ± 0.5° bakeng sa 4H/6H-P, Mothapong:〈111〉± 0.5° bakeng sa 3C-N
Botebo ba Micropipe 0 cm-2
Ho hanyetsa mofuta oa p 4H/6H-P ≤0.1 Ωꞏcm ≤0.3 Ωꞏcm
mofuta oa n 3C-N ≤0.8 mΩꞏcm ≤1 m Ωꞏcm
Boikutlo ba Motheo bo bataletseng 4H/6H-P -{1010} ± 5.0°
3C-N -{110} ± 5.0°
Bolelele ba Sephara ba Motheo 32.5 mm ± 2.0 mm
Bolelele ba Bobedi bo Sephara 18.0 mm ± 2.0 mm
Boikutlo bo Bobedi bo bataletseng Silicon e shebile holimo: 90° CW. ho tloha ho Prime flat ± 5.0°
Ho se kenyeletsoe ha Moeli 3 mm 6 mm
LTV/TTV/Seqha/Sekotwana ≤2.5 μm/≤5 μm/≤15 μm/≤30 μm ≤10 μm/≤15 μm/≤25 μm/≤40 μm
Ho ba le makukuno Ra≤1 nm ea Poland
CMP Ra≤0.2 nm Ra≤0.5 nm
Mapetso a Moeli ka Leseli le Matla a Phahameng Ha ho letho Bolelele bo bokellaneng ≤ 10 mm, bolelele bo le bong ≤2 mm
Lipoleiti tsa Hex ka Leseli le Phahameng la Matla Sebaka se bokellaneng ≤0.05% Sebaka se bokellaneng ≤0.1%
Libaka tsa Polytype ka Leseli le Matla a Phahameng Ha ho letho Sebaka se bokellaneng ≤3%
Ho kenyeletsoa ha Khabone e Bonahalang Sebaka se bokellaneng ≤0.05% Sebaka se bokellaneng ≤3%
Ho ngoatheloa ha bokaholimo ba Silicon ke Leseli le Matla a Phahameng Ha ho letho Bolelele bo bokellaneng ≤1 × bophara ba wafer
Li-chips tsa Edge tse Phahameng ka Matla a Phahameng Ha ho letho le dumelletsweng bophara le botebo ba ≥0.2mm 5 e lumelletsoe, ≤1 mm ka 'ngoe
Tšilafalo ea Bokaholimo ba Silicon ka Matla a Phahameng Ha ho letho
Sephutheloana Cassette ea wafer e nang le li-wafer tse ngata kapa setshelo se le seng sa wafer

Lintlha:

※ Meeli ea liphoso e sebetsa holim'a wafer eohle ntle le sebaka se ka thoko ho lehlakore. # Maqeba a lokela ho hlahlojoa sefahlehong sa Si o

Wafer ea mofuta oa P SiC, 4H/6H-P 3C-N, e nang le boholo ba lisenthimithara tse 6 le botenya ba 350 μm, e bapala karolo ea bohlokoa tlhahisong ea indasteri ea lisebelisoa tsa motlakase tse sebetsang hantle. Ho tsamaisa mocheso hantle le motlakase o phahameng ho etsa hore e be ntle bakeng sa likarolo tsa tlhahiso tse kang li-switch tsa motlakase, li-diode le li-transistors tse sebelisoang libakeng tse nang le mocheso o phahameng joalo ka likoloi tsa motlakase, li-grid tsa motlakase le litsamaiso tsa matla a tsosolositsoeng. Bokhoni ba wafer ba ho sebetsa hantle maemong a thata bo netefatsa ts'ebetso e tšepahalang lits'ebetsong tsa indasteri tse hlokang matla a mangata le ts'ebetso e ntle ea matla. Ho feta moo, tataiso ea eona ea mantlha e bataletseng e thusa ho hokahanya ka nepo nakong ea tlhahiso ea sesebelisoa, ho ntlafatsa ts'ebetso ea tlhahiso le botsitso ba sehlahisoa.

Melemo ea li-substrate tsa mofuta oa N SiC tse kopaneng e kenyelletsa

  • Ho khanna ho Phahameng ha Thermal: Li-wafer tsa mofuta oa P SiC li tlosa mocheso ka katleho, e leng se etsang hore li be ntle bakeng sa lits'ebetso tsa mocheso o phahameng.
  • Motlakase o Phahameng oa ho Aroha: E khona ho mamella motlakase o phahameng, e netefatsa hore lisebelisoa tsa motlakase le tsa motlakase o phahameng lia tšepahala.
  • Ho Hanela Tikoloho e Bohloko: E tšoarella hantle haholo maemong a feteletseng, joalo ka mocheso o phahameng le libaka tse senyang.
  • Phetoho e Sebetsang ea Matla: Ho sebelisa doping ea mofuta oa P ho nolofatsa ts'ebetso e sebetsang ea matla, e leng se etsang hore wafer e lokele litsamaiso tsa phetoho ea matla.
  • Boikutlo ba Motheo bo bataletseng: E netefatsa ho otloloha hantle nakong ea tlhahiso, e ntlafatsa ho nepahala le botsitso ba sesebelisoa.
  • Sebopeho se Sesesaane (350 μm): Botenya bo botle ba wafer bo tšehetsa ho kopanngoa ha lisebelisoa tsa elektroniki tse tsoetseng pele, tse nang le sebaka se fokolang.

Ka kakaretso, wafer ea mofuta oa P, 4H/6H-P 3C-N, e fana ka melemo e mengata e etsang hore e lokele haholo lits'ebetso tsa indasteri le tsa elektroniki. Ho tsamaisa mocheso le motlakase oa eona o phahameng ho nolofalletsa ts'ebetso e tšepahalang libakeng tse nang le mocheso o phahameng le motlakase o phahameng, ha ho hanyetsa ha eona maemong a thata ho netefatsa ho tšoarella. Ho sebelisa P-type doping ho lumella phetoho e sebetsang hantle ea motlakase, e leng se etsang hore e be e loketseng lisebelisoa tsa motlakase le litsamaiso tsa matla. Ho feta moo, tataiso ea mantlha ea wafer e bataletseng e netefatsa ho lumellana hantle nakong ea ts'ebetso ea tlhahiso, e ntlafatsa botsitso ba tlhahiso. Ka botenya ba 350 μm, e loketse hantle ho kopanngoa le lisebelisoa tse tsoetseng pele, tse nyane.

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