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Hobaneng ha SiC e thibelang mocheso ka halofo ho feta SiC e tsamaisang motlakase?
SiC e thibelang mocheso ka semi-insulation e fana ka resistivity e phahameng haholo, e leng se fokotsang maqhubu a ho dutla ha metsi disebedisweng tse nang le motlakase o phahameng le maqhubu a phahameng. SiC e tsamaisang motlakase e loketse haholoanyane bakeng sa ditshebediso moo ho hlokahalang ho tsamaisa motlakase. -
Na di-wafer tsena di ka sebediswa bakeng sa kgolo ya epitaxial?
E, di-wafer tsena di se di loketse ho sebediswa mme di ntlafaditswe bakeng sa MOCVD, HVPE, kapa MBE, ka kalafo ya bokahodimo le taolo ya diphoso ho netefatsa boleng bo hodimo ba lera la epitaxial. -
U etsa bonnete ba hore o hlwekile joang ka wafer?
Ts'ebetso ea kamore ea ho hloekisa ea Sehlopha sa 100, tlhoekiso ea ultrasonic ea mehato e mengata, le sephutheloana se koetsoeng ka naetrojene li tiisa hore li-wafer ha li na litšila, masalla le ho taboha ho honyenyane. -
Nako ea ho etella pele bakeng sa liodara ke efe?
Hangata disampole di romelwa matsatsing a kgwebo a 7-10, athe diotara tsa tlhahiso hangata di romelwa ka dibeke tse 4-6, ho latela boholo ba wafer le dibopeho tse ikgethileng. -
Na o ka fana ka dibopeho tse ikgethileng?
E, re ka etsa di-substrate tse ikgethileng ka dibopeho tse fapaneng tse kang difensetere tse planar, di-groove tsa V, dilense tse chitja, le tse ding.
Semi-Insulating Silicon Carbide (SiC) Substrate High-Purity Bakeng sa Likhalase tsa Ar
Setšoantšo se qaqileng
Kakaretso ea Sehlahisoa sa Li-wafer tsa SiC tse Sireletsang ka Semi-Insulation
Li-Wafer tsa rona tsa High-Purity Semi-Insulating SiC li etselitsoe lisebelisoa tsa elektroniki tse tsoetseng pele tsa motlakase, likarolo tsa RF/microwave, le lits'ebetso tsa optoelectronic. Li-wafer tsena li entsoe ka likristale tse le 'ngoe tsa boleng bo holimo tsa 4H- kapa 6H-SiC, ho sebelisoa mokhoa oa kholo o ntlafalitsoeng oa Physical Vapor Transport (PVT), o lateloang ke ho kenngoa ha puseletso ea boemo bo tebileng. Sephetho ke wafer e nang le litšobotsi tse latelang tse ikhethang:
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Ho hanyetsa ka ho phahameng haholo: ≥1×10¹² Ω·cm, e fokotsang maqhubu a ho dutla ha motlakase ka katleho disebedisweng tsa ho fetola motlakase tse nang le motlakase o phahameng.
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Sekheo se Sephara sa Band (~3.2 eV): E netefatsa tshebetso e ntle haholo dibakeng tse nang le mocheso o phahameng, tse nang le matla a maholo, le tse nang le mahlaseli a mangata.
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Ho khanna ho ikhethang ha mocheso: >4.9 W/cm·K, e fanang ka ho qhala mocheso ka katleho lits'ebetsong tse nang le matla a maholo.
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Matla a Phahameng a Mechini: Ka boima ba Mohs ba 9.0 (bo latelang daemane feela), katoloso e tlase ea mocheso, le botsitso bo matla ba lik'hemik'hale.
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Bokaholimo bo Boreledi ba Atomiki: Ra < 0.4 nm le botenya ba sekoli < 1/cm², e loketse bakeng sa tlhahiso ea MOCVD/HVPE epitaxy le micro-nano.
Boholo bo fumanehang: Boholo bo tloaelehileng bo kenyelletsa 50, 75, 100, 150, le 200 mm (2"–8"), ka bophara bo ikhethileng bo fumanehang ho fihlela ho 250 mm.
Botenya ba mefuta e fapaneng: 200–1,000 μm, ka mamello ea ±5 μm.
Mokhoa oa Tlhahiso ea Li-wafer tsa SiC tse Sireletsang ka Semi-Insulation
Tokisetso ea Phofo ea SiC e Hloekileng Haholo
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Boitsebiso ba ho Qala: Phofo ea SiC ea sehlopha sa 6N, e hloekisitsoeng ka ho sebelisa sublimation ea vacuum ea mekhahlelo e mengata le kalafo ea mocheso, ho netefatsa tšilafalo e tlase ea tšepe (Fe, Cr, Ni < 10 ppb) le li-inclusions tse fokolang tsa polycrystalline.
Khōlo ea PVT e le 'Ngoe ea Crystal e Fetotsoeng
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Tikoloho: Haufi le vacuum (10⁻³–10⁻² Torr).
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Thempereichara: Sebopi sa graphite se futhumatsoang ho fihlela ho ~2,500 °C ka mocheso o laoloang oa ΔT ≈ 10–20 °C/cm.
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Phallo ea Khase le Moralo oa Sebopi: Li-separator tse entsoeng ka ho khetheha tse nang le masoba le tse entsoeng ka ho khetheha li netefatsa kabo e tšoanang ea mouoane le ho thibela nucleation e sa batleheng.
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Phepelo e Fetohang le Potoloho: Ho tlatswa ha phofo ea SiC le ho potoloha ha kristale-rod nako le nako ho fella ka ho se lekane ho fokolang (<3,000 cm⁻²) le ho shebana ho tsitsitseng ha 4H/6H.
Ho Hlophisa Matšeliso a Boemo bo Tebileng
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Hydrogen Anneal: E tsamaisoa sepakapakeng sa H₂ mochesong o pakeng tsa 600–1,400 °C ho kenya tšebetsong maraba a tebileng le ho tsitsisa bajari ba ka hare.
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N/Al Co-Doping (Boikhethelo): Ho kenyelletsoa ha Al (moamoheli) le N (mofani) nakong ea kholo kapa kamora kholo ea CVD ho theha lipara tse tsitsitseng tsa mofani-moamoheli, tse khannang litlhōrō tsa ho hanyetsa.
Ho Seha ka ho Nepahala le ho Lapsa ka Mehato e Mengata
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Ho Seha ka Terata ea Taemane: Li-wafer tse khaotsoeng ho fihlela li le botenya ba 200–1,000 μm, tse nang le tšenyo e nyane le mamello ea ±5 μm.
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Mokhoa oa ho kopanya: Di-abrasives tsa taemane tse latellanang tse tlohang ho isa ho tse nyane di tlosa tshenyo ya saga, di lokisa wafer bakeng sa ho bentsha.
Ho Polisha ha Mechine ea Lik'hemik'hale (CMP)
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Media ea ho bentša: Nano-oxide (SiO₂ kapa CeO₂) seretse se ka har'a tharollo e bonolo ea alkaline.
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Taolo ea Ts'ebetso: Ho bentsha ka kgatello e tlase ho fokotsa ho rarahana, ho fihlella ho rarahana ha RMS ha 0.2–0.4 nm le ho tlosa ho taboha ho honyenyane.
Ho Hloekisa le ho Paka ha ho Qetela
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Ho Hloekisa ka Ultrasonic: Ts'ebetso ea ho hloekisa ka mehato e mengata (solvent ea tlhaho, kalafo ea asiti/base, le ho hlatsoa ka metsi a hloekisitsoeng) tikolohong ea kamore e hloekileng ea Sehlopha sa 100.
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Ho tiisa le ho paka: Ho omisa wafer ka ho hloekisa naetrojene, ho koetsoe ka mekotleng e sireletsang e tletseng naetrojene mme ho pakiloe ka mabokoseng a kantle a thibelang ho sisinyeha, a thothomelang.
Litlhaloso tsa Li-Wafer tsa SiC tse Sireletsang ka Semi-Insulation
| Tshebetso ea Sehlahisoa | Sehlopha sa P | Sehlopha sa D |
|---|---|---|
| I. Li-parameter tsa kristale | I. Li-parameter tsa kristale | I. Li-parameter tsa kristale |
| Mofuta oa kristale oa Polytype | 4H | 4H |
| Index ea Refractive a | >2.6 @589nm | >2.6 @589nm |
| Sekhahla sa ho monya a | ≤0.5% @450-650nm | ≤1.5% @450-650nm |
| Phetiso ea MP (E sa koaheloang) | ≥66.5% | ≥66.2% |
| Haze a | ≤0.3% | ≤1.5% |
| Ho kenyelletsoa ha mefuta e mengata | Ha ea lumelloa | Sebaka se bokellaneng ≤20% |
| Botenya ba Micropipe a | ≤0.5 /cm² | ≤2 /cm² |
| Hexagonal Sekheo a | Ha ea lumelloa | Ha e eo |
| Ho kenyeletsoa ka mahlakoreng a | Ha ea lumelloa | Ha e eo |
| Ho kenyelletsoa ha MP | Ha ea lumelloa | Ha e eo |
| II. Liparamente tsa Mekaniki | II. Liparamente tsa Mekaniki | II. Liparamente tsa Mekaniki |
| Bophara | 150.0 mm +0.0 mm / -0.2 mm | 150.0 mm +0.0 mm / -0.2 mm |
| Boikutlo ba Bokaholimo | {0001} ±0.3° | {0001} ±0.3° |
| Bolelele ba Sephara ba Motheo | Notch | Notch |
| Bolelele ba Bobedi bo Sephara | Ha ho folete ea bobeli | Ha ho folete ea bobeli |
| Boikutlo ba Notch | <1-100> ±2° | <1-100> ±2° |
| Angle ea Notch | 90° +5° / -1° | 90° +5° / -1° |
| Botebo ba Notch | 1 mm ho tloha moeling +0.25 mm / -0.0 mm | 1 mm ho tloha moeling +0.25 mm / -0.0 mm |
| Phekolo ea Bokaholimo | Sefahleho sa C, Si-face: Chemo-Mechanical Polishing (CMP) | Sefahleho sa C, Si-face: Chemo-Mechanical Polishing (CMP) |
| Moeli oa Wafer | E nang le Chamfere (e chitja) | E nang le Chamfere (e chitja) |
| Bokgopo ba Bokaholimo (AFM) (5μm x 5μm) | Si-sefahleho, C-sefahleho: Ra ≤ 0,2 nm | Si-sefahleho, C-sefahleho: Ra ≤ 0,2 nm |
| Botenya ba (Tropel) | 500.0 μm ± 25.0 μm | 500.0 μm ± 25.0 μm |
| LTV (Tropel) (40mm x 40mm) a | ≤ 2 μm | ≤ 4 μm |
| Phapang ea Botenya Bohle (TTV) a (Tropel) | ≤ 3 μm | ≤ 5 μm |
| Bow (Boleng bo felletseng) a (Tropel) | ≤ 5 μm | ≤ 15 μm |
| Warp a (Tropel) | ≤ 15 μm | ≤ 30 μm |
| III. Liparamente tsa Bokaholimo | III. Liparamente tsa Bokaholimo | III. Liparamente tsa Bokaholimo |
| Chip/Notch | Ha ea lumelloa | ≤ dikhomphutha tse 2, bolelele le bophara ba e 'ngoe le e 'ngoe ≤ 1.0 mm |
| Ngola (Si-face, CS8520) | Bolelele bohle ≤ 1 x Bophara | Bolelele bohle ≤ 3 x Bophara |
| Karoloana a (Si-face, CS8520) | ≤ likhomphutha tse 500 | Ha e eo |
| Lekhalo | Ha ea lumelloa | Ha ea lumelloa |
| Tšilafalo a | Ha ea lumelloa | Ha ea lumelloa |
Litšebeliso tsa Bohlokoa tsa Li-Wafer tsa SiC tse Sireletsang ka Semi-Insulation
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Lisebelisoa tsa Elektroniki tse Matla a Phahameng: Li-MOSFET tse thehiloeng ho SiC, di-diode tsa Schottky, le li-module tsa motlakase bakeng sa likoloi tsa motlakase (li-EV) li rua molemo ho tsoa bokhoning ba SiC ba ho hanyetsa ka tlase le ba motlakase o phahameng.
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RF le Microwave: Tshebetso ya maqhubu a phahameng a SiC le khanyetso ya mahlaseli di loketse di-amplifiers tsa seteishene sa motheo sa 5G, di-module tsa radar, le puisano ya sathelaete.
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Lisebelisoa tsa Optoelectronics: Li-LED tsa UV, li-diode tsa laser e putsoa, le li-photodetector li sebelisa li-substrate tsa SiC tse boreleli ka athomo bakeng sa kholo e ts'oanang ea epitaxial.
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Ho Utloisisa Tikoloho e Feteletseng: Ho tsitsa ha SiC mochesong o phahameng (>600 °C) ho etsa hore e be e loketseng li-sensor libakeng tse thata, ho kenyeletsoa li-turbine tsa khase le li-detector tsa nyutlelie.
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Lifofane le Tšireletso: SiC e fana ka ho tšoarella bakeng sa lisebelisoa tsa elektroniki tsa motlakase ho lisathelaete, litsamaiso tsa limisaele le lisebelisoa tsa elektroniki tsa lifofane.
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Lipatlisiso tse Tsoetseng Pele: Litharollo tse ikhethileng bakeng sa khomphutha ea quantum, micro-optics, le lits'ebetso tse ling tse ikhethileng tsa lipatlisiso.
Lipotso Tse Botsoang Khafetsa
Mabapi le rona
XKH e ikhethile ka nts'etsopele ea theknoloji e phahameng, tlhahiso le thekiso ea khalase e khethehileng ea mahlo le thepa e ncha ea kristale. Lihlahisoa tsa rona li sebeletsa lisebelisoa tsa elektroniki tsa mahlo, lisebelisoa tsa elektroniki tsa bareki le sesole. Re fana ka likarolo tsa mahlo tsa Sapphire, likoahelo tsa lense ea mohala oa thekeng, Ceramics, LT, Silicon Carbide SIC, Quartz, le li-wafer tsa kristale tsa semiconductor. Ka boiphihlelo bo nang le boiphihlelo le lisebelisoa tsa sejoale-joale, re ipabola ts'ebetsong ea lihlahisoa tse seng tsa maemo a holimo, re ikemiselitse ho ba khoebo e etellang pele ea theknoloji e phahameng ea lisebelisoa tsa optoelectronic.










