Mofuta oa SiC Ingot 4H Dia 4inch 6inch Botenya 5-10mm Patlisiso / Kereiti e sa hlakang
Matlo
1. Sebopeho sa kristale le tataiso
Mofuta oa polytype: 4H (sebopeho sa mahlakore a tšeletseng)
Li-constant tsa Lattice:
a = 3.073 Å
c = 10.053 Å
Tsela ea ho Lebisa: Ka tloaelo [0001] (C-plane), empa litsela tse ling tse kang [11\overline{2}0] (A-plane) le tsona lia fumaneha ha li kopuoa.
2. Litekanyo tsa 'Mele
Bophara:
Dikgetho tse tloaelehileng: lisenthimithara tse 4 (100 mm) le lisenthimithara tse 6 (150 mm)
Botenya:
E fumaneha ka boholo ba 5-10 mm, e ka fetoloa ho latela litlhoko tsa ts'ebeliso.
3. Thepa ea Motlakase
Mofuta oa Doping: E fumaneha ka har'a intrinsic (semi-insulating), mofuta oa n (e nang le naetrojene), kapa mofuta oa p (e nang le aluminium kapa boron).
4. Thepa ea Mocheso le ea Mekaniki
Ho tsamaisa mocheso: 3.5-4.9 W/cm·K mochesong oa kamore, e leng se nolofalletsang ho qhala mocheso hantle.
Bothata: Sekala sa Mohs ke 9, e leng se etsang hore SiC e be ea bobeli ka ho ba thata kamora daemane.
| Paramethara | Lintlha tse qaqileng | Yuniti |
| Mokhoa oa Kholo | PVT (Sepalangoang sa Mouoane oa 'Mele) | |
| Bophara | 50.8 ± 0.5 / 76.2 ± 0.5 / 100.0 ± 0.5 / 150 ± 0.5 | mm |
| Mofuta oa Polytype | 4H / 6H (50.8 mm), 4H (76.2 mm, 100.0 mm, 150 mm) | |
| Boikutlo ba Bokaholimo | 0.0˚ / 4.0˚ / 8.0˚ ± 0.5˚ (50.8 mm), 4.0˚ ± 0.5˚ (tse ling) | tekanyo |
| Mofuta | Mofuta oa N | |
| Botenya | 5-10 / 10-15 / >15 | mm |
| Boikutlo ba Motheo bo bataletseng | (10-10) ± 5.0˚ | tekanyo |
| Bolelele ba Sephara ba Motheo | 15.9 ± 2.0 (50.8 mm), 22.0 ± 3.5 (76.2 mm), 32.5 ± 2.0 (100.0 mm), 47.5 ± 2.5 (150 mm) | mm |
| Boikutlo bo Bobedi bo bataletseng | 90˚ CCW ho tloha tataisong ± 5.0˚ | tekanyo |
| Bolelele ba Bobedi bo Sephara | 8.0 ± 2.0 (50.8 mm), 11.2 ± 2.0 (76.2 mm), 18.0 ± 2.0 (100.0 mm), Ha ho letho (150 mm) | mm |
| Sehlopha | Patlisiso / Bosaoana |
Likopo
1. Patlisiso le Nts'etsopele
Ingot ea sehlopha sa lipatlisiso sa 4H-SiC e loketse lilaboratori tsa thuto le tsa indasteri tse shebaneng le nts'etsopele ea lisebelisoa tse thehiloeng ho SiC. Boleng ba eona bo phahameng ba kristale bo nolofalletsa liteko tse nepahetseng mabapi le thepa ea SiC, joalo ka:
Lithuto tsa ho tsamaea ha moketjana.
Mekhoa e metle ea ho hlalosa le ho fokotsa liphoso.
Ntlafatso ea lits'ebetso tsa kholo ea epitaxial.
2. Sebaka se ka tlas'a lefatše se sa tloaelehang
Ingot ea sehlopha sa dummy e sebelisoa haholo lits'ebetsong tsa liteko, tlhahlobo le prototyping. Ke mokhoa o mong o theko e tlaase bakeng sa:
Tekanyo ea liparamente tsa ts'ebetso ho Chemical Vapor Deposition (CVD) kapa Physical Vapor Deposition (PVD).
Ho lekola lits'ebetso tsa ho hlaba le ho bentša libakeng tsa tlhahiso.
3. Matla a Elektroniki
Ka lebaka la lekhalo la eona le leholo la bandgap le conductivity e phahameng ea mocheso, 4H-SiC ke lejoe la motheo bakeng sa lisebelisoa tsa motlakase tsa motlakase, tse kang:
Li-MOSFET tse nang le motlakase o phahameng.
Diode tsa Schottky Barrier (SBDs).
Litransistor tsa Tšusumetso ea Tšimo ea Junction (JFET).
Lisebelisoa li kenyelletsa li-inverter tsa likoloi tsa motlakase, li-inverter tsa letsatsi le li-grid tse bohlale.
4. Lisebelisoa tse nang le maqhubu a phahameng
Ho tsamaea ha dielektrone tse ngata tsa thepa le tahlehelo e tlase ya bokgoni ba yona di etsa hore e lokele:
Li-transistor tsa maqhubu a seea-le-moea (RF).
Litsamaiso tsa puisano tse se nang mohala, ho kenyeletsoa le meralo ea motheo ea 5G.
Lisebelisoa tsa lifofane le tsa tšireletso tse hlokang litsamaiso tsa radar.
5. Mekhoa e Hanelang Mahlaseli
Ho hanyetsa ha 4H-SiC tšenyo ea mahlaseli ho etsa hore e be ea bohlokoa haholo libakeng tse thata tse kang:
Lisebelisoa tsa ho hlahloba sebaka.
Lisebelisoa tsa ho beha leihlo setsi sa matla a nyutlelie.
Lisebelisoa tsa elektroniki tsa boemo ba sesole.
6. Mahlale a Hlahang
Ha theknoloji ea SiC e ntse e tsoela pele, lits'ebetso tsa eona li ntse li tsoela pele ho hola ho ba masimo a kang:
Lipatlisiso tsa Photonics le quantum computing.
Ntlafatso ea li-LED tse matla haholo le li-sensor tsa UV.
Ho kopanngoa ha dibopeho tse fapaneng tsa di-semiconductor tsa semiconductor tse nang le lekhalo le leholo.
Melemo ea 4H-SiC Ingot
Bohloeki bo Phahameng: E entsoe tlas'a maemo a thata ho fokotsa litšila le bongata ba liphoso.
Ho Kgona ho Kgoloha: E fumaneha ka bophara ba lisenthimithara tse 4 le lisenthimithara tse 6 ho tshehetsa ditlhoko tsa maemo a indasteri le tsa dipatlisiso.
Ho feto-fetoha ha maemo: E ikamahanya le mefuta e fapaneng ea lithethefatsi le litloaelo ho fihlela litlhoko tse itseng tsa ts'ebeliso.
Tshebetso e Matla: Botsitso bo phahameng ba mocheso le ba mechini tlasa maemo a feteletseng a tshebetso.
Qetello
Ingot ea 4H-SiC, e nang le thepa ea eona e ikhethang le lits'ebetso tse pharaletseng, e eme ka pele ho boqapi ba thepa bakeng sa lisebelisoa tsa elektroniki tsa moloko o latelang le lisebelisoa tsa optoelectronics. Ebang e sebelisetsoa lipatlisiso tsa thuto, prototyping ea indasteri, kapa tlhahiso ea lisebelisoa tse tsoetseng pele, li-ingot tsena li fana ka sethala se tšepahalang sa ho sutumelletsa meeli ea theknoloji. Ka litekanyo tse ka fetoloang, doping, le tataiso, ingot ea 4H-SiC e etselitsoe ho fihlela litlhoko tse ntseng li fetoha tsa indasteri ea semiconductor.
Haeba o na le tjantjello ea ho ithuta ho eketsehileng kapa ho etsa odara, ka kopo ikutloe u lokolohile ho ikopanya le rona bakeng sa litlhaloso tse qaqileng le likeletso tsa tekheniki.
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