Sebaka se ka tlas'a lefatše
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Substrate ea SiC 3inch 350um botenya ba HPSI mofuta oa Prime Kereiti ea Dummy
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Silicon Carbide SiC Ingot 6inch N mofuta Dummy/prime grade grade botenya e ka ba e etselitsoeng
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6 ka hare ho Silicon Carbide 4H-SiC Semi-Insulating Ingot, Sehlopha sa Dummy
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Mofuta oa SiC Ingot 4H Dia 4inch 6inch Botenya 5-10mm Patlisiso / Kereiti e sa hlakang
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Sapphire ea lisenthimithara tse 6 Boule Sapphire e se nang letho kristale e le 'ngoe Al2O3 99.999%
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Sic Substrate Silicon Carbide Wafer 4H-N Type High Hardness Resistance Corrosion Resistance Prime Grade Polishing
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2inch Silicon Carbide Wafer 6H-N Mofuta oa Prime Kereiti ea Patlisiso Kereiti ea Dummy Kereiti ea 330μm 430μm Botenya
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Sekoahelo sa silicon carbide sa 2inch 6H-N bophara bo bentšitsoeng ba mahlakore a mabeli 50.8mm kereiti ea lipatlisiso tsa tlhahiso
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mofuta oa p 4H/6H-P 3C-N TYPE SIC substrate 4inch 〈111〉± 0.5°Zero MPD
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Sekoahelo sa SiC P-type 4H/6H-P 3C-N 4inch withe botenya ba 350um Kereiti ea tlhahiso Kereiti ea Dummy
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4H/6H-P 6inch SiC wafer Kereiti ea Tlhahiso ea Zero MPD Kereiti ea Dummy Kereiti
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Sejana sa SiC sa mofuta oa P 4H/6H-P 3C-N Botenya ba lisenthimithara tse 6 350 μm se nang le Orientation ea Motheo e bataletseng