SiC Ceramic Tray End Effector Wafer Ho sebetsana le Likarolo tse entsoeng ka tloaelo
SiC Ceramic & Alumina Ceramic Custom Components
Silicon Carbide (SiC) Lisebelisoa tsa Ceramic Custom
Silicon Carbide (SiC) likarolo tsa tloaelo tsa ceramic ke lisebelisoa tsa ceramic tsa indasteri tse sebetsang hantle tse tsebahalang ka tsona.boima bo phahameng haholo, botsitso bo botle ba mocheso, ho hanyetsa kutu e ikhethang, le conductivity e phahameng ea mocheso.. Silicon Carbide (SiC) likarolo tsa tloaelo tsa ceramic li thusa ho boloka botsitso ba sebopeho homaemo a mocheso o phahameng ha a ntse a hanela khoholeho e tsoang ho acid e matla, alkalis, le tšepe e qhibilihisitsoeng.. Li-ceramics tsa SiC li etsoa ka mekhoa e kangho lla ho se na kgatello ya maikutlo, ho etsa sintering, kapa ho penya ka sehatsetsi'me e ka etsoa hore e be libopeho tse rarahaneng, ho kenyeletsoa mehele e tiisitsoeng ea mochini, matsoho a shaft, li-nozzles, li-tubes tsa sebōpi, liketsoana tsa liphaephe le lipoleiti tse sa tsoeng.
Alumina Ceramic Custom Components
Alumina (Al₂O₃) likarolo tsa tloaelo tsa ceramic li hatisahigh insulation, matla a matle a mochine, le ho roala ho hanyetsa. E khethiloe ka limaraka tsa bohloeki (mohlala, 95%, 99%), Alumina (Al₂O₃) likarolo tsa tloaelo tsa ceramic tse nang le machining a nepahetseng li li lumella ho etsoa ka li-insulators, li-bearings, lisebelisoa tsa ho itšeha le li-implants tsa bongaka. Li-ceramics tsa alumina li entsoe ka mokhoa o ikhethilengkhatello e omeletseng, ho bopa ente, kapa mekhoa ea ho hatella ea isostatic, e nang le bokaholimo bo benyang ho fihlela seipone.
XKH e sebetsa ka ho khetheha ho R&D le tlhahiso ea tloaelo easilicon carbide (SiC) le alumina (Al₂O₃) ceramics. Lihlahisoa tsa ceramic tsa SiC li shebana le mocheso o phahameng, ho apara ka holimo le ho senya, ho koahela lisebelisoa tsa semiconductor (mohlala, liketsoana tsa li-wafer, cantilever paddles, li-tubes tsa sebōpi) hammoho le likarolo tsa tšimo ea mocheso le litiiso tse phahameng bakeng sa likarolo tse ncha tsa matla. Lihlahisoa tsa alumina ceramic li totobatsa ho kenya letsoho, ho tiisa, le thepa ea biomedical, ho kenyeletsoa li-substrates tsa elektroniki, mehele ea tiiso ea mochini, le li-implants tsa bongaka. Ho sebelisa mahlale a kangho hatella ka isostatic, sintering e se nang khatello, le machining a nepahetseng, re fana ka litharollo tse entsoeng ka mokhoa o phahameng oa ts'ebetso bakeng sa liindasteri tse kenyeletsang li-semiconductors, photovoltaics, aerospace, bongaka, le ts'ebetso ea lik'hemik'hale, ho netefatsa hore likarolo li finyella litlhoko tse thata bakeng sa ho nepahala, ho phela nako e telele le ho tšepahala maemong a feteletseng.
SiC Ceramic Functional Chucks & CMP Grinding Discs Kenyelletso
SiC Ceramic Vacuum Chucks
Silicon Carbide (SiC) Ceramic Vacuum Chucks ke lisebelisoa tsa papatso tse nepahetseng haholo tse entsoeng ka lisebelisoa tsa ceramic tsa silicon carbide (SiC) tse sebetsang hantle haholo. Li etselitsoe lits'ebetso tse hlokang bohloeki bo feteletseng le botsitso, joalo ka semiconductor, photovoltaic, le liindasteri tsa tlhahiso e nepahetseng. Melemo ea bona ea mantlha e kenyelletsa: bokaholimo bo bentšitsoeng ba seipone (seo se bataletseng se laoloang ka har'a 0.3-0.5 μm), ho satalla ho hoholo le ho fokotseha ho hoholo ha mocheso (ho netefatsa sebopeho sa nano-level le botsitso ba boemo), sebopeho se bobebe haholo ((ho fokotsa boima ba 'mele), ho theola boima ba 'mele ho isa ho 9.5, ho feta nako ea bophelo ea li-chucks tsa tšepe) . Thepa ena e nolofalletsa ts'ebetso e tsitsitseng tikolohong e nang le mocheso o phahameng le o tlase o feto-fetohang, kutu e matla, le ho sebetsana ka lebelo le phahameng, ho ntlafatsa haholo tlhahiso le katleho ea tlhahiso bakeng sa likarolo tse nepahetseng joalo ka li-wafers le li-optical elements.
Silicon Carbide (SiC) Bump Vacuum Chuck bakeng sa Metrology le Tlhahlobo
E etselitsoe lits'ebetso tsa tlhahlobo ea bofokoli, sesebelisoa sena sa adsorption se nepahetseng haholo se entsoe ka thepa ea ceramic ea silicone carbide (SiC). Sebopeho sa eona se ikhethileng se fana ka matla a matla a vacuum adsorption, ha se ntse se fokotsa sebaka sa ho ikopanya le sephaphatha, ka hona se thibela tšenyo kapa tšilafalo holim'a bokaholimo le ho netefatsa botsitso le ho nepahala nakong ea tlhahlobo. Chuck e na le boreleli bo ikhethang (0.3-0.5 μm) le bokaholimo bo bentšitsoeng ka seipone, bo kopantsoeng le boima bo bobebe haholo, le ho satalla ho hoholo, ho netefatsa botsitso nakong ea ho sisinyeha ka lebelo le holimo. Coefficient ea eona e tlase haholo ea katoloso ea mocheso, e tiisa botsitso ba maemo tlas'a maemo a feto-fetohang a mocheso, athe khanyetso e matla ea ho sesa e eketsa bophelo ba ts'ebeletso. Sehlahisoa se ts'ehetsa ho itloaetsa ho 6, 8, le 12-inch, ho fihlela litlhoko tsa tlhahlobo ea boholo bo fapaneng ba wafer.
Flip Chip Bonding Chuck
Flip chip bonding chuck ke karolo ea mantlha ts'ebetsong ea li-chip flip-chip bonding, e etselitsoeng ka kotloloho li-wafers tse bapatsang hantle, ho netefatsa botsitso nakong ea ts'ebetso ea lebelo le holimo, e nepahetseng haholo. E na le bokaholimo bo bentšitsoeng ka seipone ((phatness/parallelism ≤1 μm) le li-groove tsa kanale tsa khase tse nepahetseng, ho fihlela matla a ts'oanang a vacuum adsorption, ho thibela ho falla kapa ho senyeha. Ho satalla ha eona ho phahameng le coefficient e tlase haholo ea katoloso ea mocheso (haufi le thepa ea silicon) e netefatsa botsitso ba maemo maemong a maqhama a mocheso o phahameng, athe lisebelisoa tse phahameng haholo (mohlala, silicon carbide kapa ceramics tse khethehileng) li thibela ka nepo ho kenella ha khase, ho boloka ts'ebetso ea nako e telele ea vacuum. Litšobotsi tsena ka kopanelo li tšehetsa ho nepahala ha bonding ba boemo ba micron, 'me li ntlafatsa haholo tlhahiso ea liphutheloana tsa chip.
SiC Bonding Chuck
Silicone carbide (SiC) bonding chuck ke sesebelisoa sa mantlha sa ts'ebetso ea li-chip bonding, e etselitsoeng ka ho khetheha ho bapatsa le ho boloka li-wafers, ho netefatsa ts'ebetso e tsitsitseng haholo tlas'a maemo a phahameng a mocheso le khatello e phahameng. E entsoe ka silicon carbide ceramic e phahameng-density (porosity <0.1%), e fihlella kabo ea matla a adsorption e ts'oanang (ho kheloha <5%) ka ho belisoa ha seipone sa nanometer (boemo ba bokaholimo ba Ra <0.1 μm) le li-grooves tse nepahetseng tsa kanale ea khase ((pore 0 μ μm) ho thibela ho senyeha ha sebaka sa 5m - 5m), Coefficient ea eona e tlase haholo ea katoloso ea mocheso(4.5×10⁻⁶/℃) e ts'oana hantle le ea li-wafers tsa silicon, e fokotsang matla a ntoa a bakoang ke khatello ea maikutlo. Ha e kopantsoe le ho satalla ho hoholo(elastic modulus> 400 GPa) le ≤1 μm flatness/parallelism, e tiisa ho nepahala ha khokahano ea maqhama. E sebelisoa haholo ho paka ka semiconductor, 3D stacking, le kopanyo ea Chiplet, e ts'ehetsa lits'ebetso tsa tlhahiso ea maemo a holimo tse hlokang ho nepahala ha nanoscale le botsitso ba mocheso.
CMP Grinding Disc
Letlapa la ho sila la CMP ke karolo ea mantlha ea lisebelisoa tsa ho belisoa ha lik'hemik'hale (CMP), tse etselitsoeng ka ho khetheha ho ts'oara le ho tsitsisa li-wafers nakong ea ho belisoa ka lebelo le phahameng, ho nolofalletsang tlhophiso ea lefats'e ea boemo ba nanometer. E entsoe ka thepa e thata haholo, e nang le matla a phahameng (mohlala, lirafshoa tsa silicon carbide kapa li-alloys tse khethehileng), e netefatsa hore ho na le li-vacuum adsorption ka mokhoa o nepahetseng oa li-grooves tse entsoeng ka mokhoa o nepahetseng. Sebaka sa eona se bentšitsoeng ka seipone ((ho batalla / ho bapisa ≤3 μm) se tiisa ho kopana ntle le khatello ea maikutlo le li-wafers, athe coefficient e tlase haholo ea katoloso ea mocheso (e ts'oanang le silicon) le liteishene tse pholileng tsa ka hare li hatella ka nepo deformation ea mocheso. E tsamaellana le li-wafers tsa 12-inch (750 mm bophara), thekenoloji ea "diffusion bonding" ea "disc" ho netefatsa kopanyo e se nang moeli le ts'epo ea nako e telele ea meaho ea multilayer tlas'a mocheso o phahameng le likhatello, e ntlafatsa haholo ts'ebetso ea CMP le chai.
Kenyelletso ea likarolo tse fapaneng tsa SiC Ceramics
Silicon Carbide (SiC) Square Mirror
Silicon Carbide (SiC) Square Mirror ke karolo ea optical e phahameng ka ho fetesisa e entsoeng ka silicon carbide ceramic e tsoetseng pele, e etselitsoeng ka ho khetheha lisebelisoa tsa ho etsa semiconductor tse phahameng joalo ka mechini ea lithography. E fihlella boima bo bobebe haholo, le ho tiea ho hoholo (elastic modulus> 400 GPa) ka moralo o bobebe o bobebe (mohlala, sekoti se ka morao sa mahe a linotsi), athe mocheso oa eona o tlase haholo oa katoloso ea mocheso (≈4.5×10⁻⁶ boemo ba mocheso o tlase). Bokaholimo ba seipone, ka mor'a ho belisoa ka mokhoa o nepahetseng, bo fumana ≤1 μm ho bata/ ho bapa, 'me ho se mamelle ha eona ho ikhethang (Mohs hardness 9.5) ho lelefatsa bophelo ba ts'ebeletso. E sebelisoa haholo litsing tsa ho sebetsa tsa mochini oa lithography, likhalase tsa laser, le libonela-hōle tsa sebaka moo ho nepahala le botsitso bo phahameng haholo li leng bohlokoa.
Litaelo tsa Silicon Carbide (SiC) Air Floatation Guides
Litaelo tsa Silicon Carbide (SiC) Air Floatation Guides li sebelisa thekenoloji e sa amaneng le aerostatic, moo khase e hatelitsoeng e etsang filimi ea moea ea boemo ba micron (hangata 3-20μm) ho finyella motsamao o boreleli o sa tsitsang le o sa sisinyeheng. Li fana ka ho nepahala ha motsamao oa nanometric (ho nepahala ha boemo bo pheta-phetoang ho fihla ho ± 75nm) le ho nepahala ha li-geometric tsa sub-micron (ho otloloha ± 0.1-0.5μm, flatness ≤1μm) , e nolofalitsoeng ke taolo ea maikutlo e koetsoeng ka sekala se nepahetseng sa grating kapa li-interferometer tsa laser. The core silicon carbide ceramic material (dikgetho li kenyelletsa Coresic® SP/Marvel Sic series) e fana ka thipa e phahameng haholo(elastic modulus>400 GPa) , ultra-low thermal expansion coefficient(4.0–4.5×10⁻⁶/K, matching silicons poro) . Moralo oa eona o bobebe ((density 3.1g/cm³, ea bobeli ho aluminium) e fokotsa inertia ea ho sisinyeha, athe khanyetso e ikhethang ea moaparo (Mohs hardness 9.5) le botsitso ba mocheso, ho netefatsa ts'epo ea nako e telele tlasa lebelo le phahameng (1m / s) le maemo a lebelo le phahameng (4G). Litataiso tsena li sebelisoa haholo ho semiconductor lithography, tlhahlobo ea li-wafer, le machining a nepahetseng haholo.
Silicon Carbide (SiC) Cross-Beams
Silicon Carbide (SiC) Cross-Beams ke likarolo tsa mantlha tsa motsamao tse etselitsoeng lisebelisoa tsa semiconductor le lits'ebetso tsa indasteri tse phahameng haholo, tse sebetsang haholo ho jara methati ea liphaephe le ho li tataisa litseleng tse boletsoeng bakeng sa motsamao oa lebelo le holimo, o nepahetseng haholo. U sebelisa silicon carbide ceramic e sebetsang hantle haholo (likhetho li kenyelletsa letoto la Coresic® SP kapa Marvel Sic) le moralo o bobebe oa sebopeho, li fihlella boima bo bobebe bo bobebe ka ho satalla ho hoholo (elastic modulus> 400 GPa), hammoho le coefficient e tlase haholo ea katoloso ea mocheso 5 × 10/⁶ ⁉⁄⁶ e phahameng. density (porosity <0.1%), ho netefatsa botsitso ba nanometric( flatness/parallelism ≤1μm) tlasa khatello ea mocheso le mochini. Thepa ea bona e kopaneng e ts'ehetsa ts'ebetso e potlakileng le e potlakileng haholo (mohlala, 1m / s, 4G), e etsa hore e be tse loketseng mechini ea lithography, litsamaiso tsa tlhahlobo ea li-wafer, le tlhahiso e nepahetseng, e matlafatsang ho nepahala ha motsamao le ts'ebetso e matla ea karabo.
Likarolo tsa Motion tsa Silicon Carbide (SiC).
Likarolo tsa Motion tsa Silicon Carbide (SiC) ke likarolo tsa bohlokoa tse etselitsoeng lits'ebetso tsa motsamao oa semiconductor tse phahameng ka ho fetesisa, tse sebelisang lisebelisoa tsa SiC tse phahameng haholo (mohlala, Coresic® SP kapa Marvel Sic series, porosity <0.1%) le moralo o bobebe oa sebopeho, ho fihlela boima bo bobebe bo bobebe (400 stifflus e phahameng ka ho fetesisa). Ka coefficient e tlase haholo ea katoloso ea mocheso(≈4.5×10⁻⁶/℃), ba netefatsa botsitso ba nanometric (ho batalla/ho bapisa ≤1μm) tlas'a ho feto-fetoha ha mocheso. Thepa ena e kopaneng e ts'ehetsa ts'ebetso e potlakileng le e potlakileng haholo (mohlala, 1m / s, 4G), e etsa hore e be e loketseng mechini ea lithography, litsamaiso tsa tlhahlobo ea li-wafer, le tlhahiso e nepahetseng, e matlafatsang ho nepahala ha motsamao le ts'ebetso e matla ea karabo.
Silicon Carbide (SiC) Optical Path Plate
Silicon Carbide (SiC) Optical Path Plate ke sethala sa mantlha se etselitsoeng litsamaiso tse peli tsa optical-path lisebelisoa tsa tlhahlobo ea wafer. E entsoe ka silicon carbide ceramic e sebetsang hantle haholo, e fihlela boima bo bobebe (" density ≈3.1 g/cm³) le ho tiea ho hoholo (elastic modulus> 400 GPa) ka moralo o bobebe oa sebopeho, ha e ntse e na le ts'ebetso e tlase e tlase haholo ea thermo. (≈4.5×10⁻⁶/℃) le boima bo phahameng(porosity <0.1%), ho netefatsa botsitso ba nanometric( flatness/parallelism ≤0.02mm) tlas’a ho feto-fetoha ha mocheso le mochini. Ka boholo ba eona bo boholo bo boholo (900 × 900mm) le ts'ebetso e ikhethang e felletseng, e fana ka motheo oa nako e telele o tsitsitseng oa lisebelisoa tsa optical, e ntlafatsang ho nepahala le ho ts'epahala ha tlhahlobo. E sebelisoa haholo ho metrology ea semiconductor, optical alignment, le litsamaiso tsa litšoantšo tse nepahetseng haholo.
Graphite + Tantalum Carbide Coated Guide Ring
The Graphite + Tantalum Carbide Coated Guide Ring ke karolo ea bohlokoa e etselitsoeng silicon carbide (SiC) sesebelisoa sa khōlo ea kristale e le 'ngoe. Mosebetsi oa eona oa mantlha ke ho tsamaisa phallo ea khase ea mocheso o phahameng ka nepo, ho netefatsa ho ts'oana le botsitso ba mocheso le libaka tsa phallo kahare ho phaposi ea karabelo. E entsoe ka "high-purity graphite substrate" (bohloeki > 99.99%) e koahetsoeng ka "CVD-deposited tantalum carbide (TaC) layer" (e nang le litšila tse koahelang <5 ppm), e bonts'a mocheso o ikhethang oa mocheso (≈120 W / m · K) (ka tlas'a mocheso o phahameng oa lik'hemik'hale). 2200 ° C), e thibelang ho bola ha mouoane oa silicon le ho hatella ho hasana ha litšila. Ho lumellana ho phahameng ha koae(ho kheloha <3%, tšireletso ea sebaka se felletseng) e netefatsa tataiso e tsitsitseng ea khase le ts'epo ea nako e telele ea ts'ebeletso, e ntlafatsang boleng le chai ea kholo ea SiC e le 'ngoe ea kristale.
Silicon Carbide (SiC) Furnace Tube Abstract
Silicon Carbide (SiC) Vertical Furnace Tube
Silicon Carbide (SiC) Vertical Furnace Tube ke karolo ea bohlokoa e etselitsoeng lisebelisoa tsa indasteri tse nang le mocheso o phahameng oa mocheso, haholo-holo e sebetsang e le tube ea ts'ireletso ea kantle, ho netefatsa phepelo e ts'oanang ea mocheso ka har'a sebōpi tlas'a sepakapaka sa moea, ka mocheso o tloaelehileng oa ho sebetsa o ka bang 1200 ° C. E entsoe ka theknoloji e kopaneng ea khatiso ea 3D, e na le litaba tse sa hloekang tsa motheo <300 ppm, mme e ka hlomelloa ka boikhethelo ka CVD silicon carbide coating, (litšila tse koahelang <5 ppm). Ho kopanya mocheso o phahameng oa mocheso (≈20 W / m · K) le botsitso bo ikhethang ba mocheso oa mocheso (ho hanyetsa likhahla tsa mocheso> 800 ° C), e sebelisoa haholo lits'ebetsong tsa mocheso o phahameng joalo ka kalafo ea mocheso oa semiconductor, sintering ea thepa ea photovoltaic, le tlhahiso e nepahetseng ea ceramic, e ntlafatsang nako e telele ea lisebelisoa.
Silicon Carbide (SiC) Horizontal Furnace Tube
Silicon Carbide (SiC) Horizontal Furnace Tube ke karolo ea mantlha e etselitsoeng lits'ebetso tsa mocheso o phahameng, e sebetsa joalo ka ts'ebetso e sebetsang libakeng tse nang le oksijene (khase e sebetsang), naetrojene (khase e sireletsang), le trace hydrogen chloride, e nang le mocheso o tloaelehileng oa ho sebetsa oa hoo e ka bang 1250 ° C. E entsoe ka theknoloji e kopaneng ea khatiso ea 3D, e na le litaba tse sa hloekang tsa motheo <300 ppm, mme e ka hlomelloa ka boikhethelo ka CVD silicon carbide coating, (litšila tse koahelang <5 ppm). Ho kopanya mocheso o phahameng oa mocheso (≈20 W/m·K) le botsitso bo ikhethang ba mocheso oa mocheso (ho hanyetsa likhahla tsa mocheso> 800 ° C), e loketse bakeng sa lits'ebetso tse hlokang semiconductor tse joalo ka oxidation, diffusion, le deposition-filimi e tšesaane, ho netefatsa maemo a sebopeho, botsitso le botsitso ba nako e telele tlas'a sepakapaka.
SiC Ceramic Fork Arms Kenyelletso
Tlhahiso ea Semiconductor
Ha ho etsoa liphaephe tsa semiconductor, matsoho a fereko a SiC ceramic a sebelisoa haholo ho fetisa le ho beha liphaphatha, tse fumanehang hangata ho:
- Thepa ea Wafer Processing Equipment: Joalo ka likhasete tsa wafer le likepe tsa tšebetso, tse sebetsang ka botsitso maemong a mocheso o phahameng le a senyang.
- Mechini ea Lithography: E sebelisoa ka likarolo tse nepahetseng joalo ka methati, litataiso, le matsoho a robotiki, moo ho tiea ha eona ho phahameng le ho fetoha ha mocheso o tlase ho netefatsa ho nepahala ha motsamao oa boemo ba nanometer.
- Mekhoa ea ho Etching le ea Phatlalatso: E sebetsa e le li-trays tsa ICP etching le likarolo tsa ts'ebetso ea semiconductor diffusion, bohloeki ba bona bo phahameng le ho hanyetsa kutu ho thibela tšilafalo ka likamoreng tsa ts'ebetso.
Industrial Automation le Robotics
Matsoho a fereko a SiC ceramic ke likarolo tsa bohlokoa ho liroboto tse sebetsang hantle tsa indasteri le lisebelisoa tse ikemetseng:
- Li-Effects tsa Liroboto: E sebelisetsoa ho tšoara, ho kopanya le ho sebetsa ka mokhoa o nepahetseng. Thepa ea bona e bobebe (tekanyo ~ 3.21 g/cm³) e ntlafatsa lebelo le ts'ebetso ea liroboto, athe boima ba bona bo phahameng (Vickers hardness ~ 2500) bo tiisa ho hanyetsa moaparo o ikhethang.
- Mehala ea Tlhahiso e Ikemetseng: Maemong a hlokang ho ts'oaroa ha nako e telele, ho sebetsa ka mokhoa o nepahetseng haholo (mohlala, libaka tsa polokelo ea e-commerce, polokelo ea fektheri), libetsa tsa fereko tsa SiC li tiisa ts'ebetso e tsitsitseng ea nako e telele.
Sefofane le Matla a Macha
Libakeng tse feteletseng, matsoho a SiC ceramic fork a phahamisa khanyetso ea mocheso o phahameng, ho hanyetsa kutu, le ho hanyetsa mocheso oa mocheso:
- Aerospace: E sebelisoa likarolong tse mahlonoko tsa sepakapaka le li-drones, moo thepa ea tsona e bobebe le e matla haholo e thusang ho fokotsa boima ba 'mele le ho ntlafatsa ts'ebetso.
- Matla a Macha: E sebelisoa lisebelisoa tsa tlhahiso bakeng sa indasteri ea photovoltaic (mohlala, libono tsa ho hasana) hape e le likarolo tse nepahetseng tsa meralo ea tlhahiso ea betri ea lithium-ion.

Ho sebetsa ha Indasteri ea Mocheso o Phahameng
Matsoho a fereko a SiC ceramic a ka mamella mocheso o fetang 1600 ° C, a etsa hore a tšoanelehe bakeng sa:
- Metallurgy, Ceramics, and Glass Industries: E sebelisoa ho li-manipulator tsa mocheso o phahameng, li-setter plate le li-push plate.
- Nuclear Energy: Ka lebaka la ho hanyetsa mahlaseli a tsona, li loketse likarolo tse itseng tsa li-reactor tsa nyutlelie.
Thepa ea Bongaka
Lefapheng la bongaka, matsoho a fereko ea SiC ceramic a sebelisetsoa haholo-holo:
- Liroboto tsa Bongaka le Lisebelisoa tsa ho Buoa: Li bohlokoa bakeng sa ho lumellana ha tsona, ho hanyetsa ho bola, le botsitso libakeng tsa ho thibela likokoana-hloko.
SiC Coating Overview
| Lintho tse tloaelehileng | Diyuniti | Litekanyetso |
| Sebopeho |
| FCC mohato oa β |
| Boitloaelo | Karolo (%) | 111 khethang |
| Boima ba bongata | g/cm³ | 3.21 |
| Ho thatafala | Vickers thata | 2500 |
| Matla a Mocheso | J·kg-1 ·K-1 | 640 |
| Katoloso ea mocheso 100–600 °C (212–1112 °F) | 10-6K-1 | 4.5 |
| Modulus e monyane | Gpa (4pt bend, 1300 ℃) | 430 |
| Boholo ba lijo-thollo | μm | 2~10 |
| Sublimation Mocheso | ℃ | 2700 |
| Felexural Matla | MPa (RT 4-point) | 415 |
| Thermal conductivity | (W/mK) | 300 |
Silicon Carbide Ceramic Structural Parts Overview
SiC Seal Parts Overview
Litiiso tsa SiC ke khetho e nepahetseng bakeng sa libaka tse thata (tse kang mocheso o phahameng, khatello e phahameng, mecha ea litaba e senyang, le ho apara ka lebelo le phahameng) ka lebaka la ho thatafala ha tsona, ho hanyetsa ho roala, ho hanyetsa mocheso o phahameng (ho mamella mocheso ho fihlela ho 1600 ° C kapa esita le 2000 ° C), le ho hanyetsa kutu. Ts'ebetso ea bona e phahameng ea mocheso e thusa ho fokotsa mocheso o sebetsang hantle, ha thepa ea bona e tlaase ea likhohlano le thepa ea ho itlotsa e ntse e tiisa ho tšepahala ho tiisa le bophelo bo bolelele ba tšebeletso tlas'a maemo a feteletseng a ts'ebetso. Litšobotsi tsena li etsa hore litiiso tsa SiC li sebelisoe haholo liindastering tse kang li-petrochemicals, merafo, tlhahiso ea semiconductor, ho hloekisa metsi a litšila le matla, ho fokotsa haholo litšenyehelo tsa tlhokomelo, ho fokotsa nako ea ho theoha, le ho matlafatsa ts'ebetso ea lisebelisoa le polokeho.
SiC Ceramic Plates e Khutšoanyane
Lipoleiti tsa ceramic tsa Silicon Carbide (SiC) li tumme ka ho thatafala ha tsona ho ikhethang (Mohs hardness ho fihla ho 9.5, ea bobeli ho daemane), conductivity e ikhethang ea mocheso (e fetang hole boholo ba li-ceramics bakeng sa taolo e nepahetseng ea mocheso), le ho se sebetse hantle ha lik'hemik'hale le ho hanyetsa mocheso oa mocheso (ho sa tsotellehe li-acids tse matla, li-acids tse potlakileng tsa alkali). Thepa ena e netefatsa botsitso ba sebopeho le ts'ebetso e ts'epahalang maemong a feteletseng (mohlala, mocheso o phahameng, abrasion, le corrosion), ha e ntse e lelefatsa bophelo ba ts'ebeletso le ho fokotsa litlhoko tsa tlhokomelo.
Lipoleiti tsa ceramic tsa SiC li sebelisoa haholo masimong a ts'ebetso e phahameng:
•Abrasives and Grinding Tools: Ho sebelisa boima bo phahameng haholo bakeng sa ho etsa mabili a silang le lithulusi tsa ho bentša, ho ntlafatsa ho nepahala le ho tšoarella ha maemo libakeng tse hohlang.
• Refractory Materials: E sebetsa e le lilara tsa sebōpi le likarolo tsa sebōpi, ho boloka botsitso bo ka holimo ho 1600 ° C ho ntlafatsa katleho ea mocheso le ho fokotsa litšenyehelo tsa tlhokomelo.
•Indasteri ea Semiconductor: E sebetsa e le litšepe tsa lisebelisoa tsa elektroniki tse matla a holimo (mohlala, diode tsa motlakase le liamplifiers tsa RF), tse tšehetsang tšebetso ea matla a phahameng le mocheso o phahameng ho matlafatsa ts'epehi le ts'ebetso ea matla.
• Casting and Smelting : Ho fetola thepa ea khale tšebetsong ea tšepe ho etsa bonnete ba hore mocheso o fetisetsoa hantle le hore o hana ho bola ha lik’hemik’hale, ho matlafatsa boleng ba metallurgic le ho boloka litšenyehelo.
SiC Wafer Boat Abstract
Likepe tsa ceramic tsa XKH SiC li fana ka botsitso bo phahameng ba mocheso, ho se sebetse ha lik'hemik'hale, boenjiniere bo nepahetseng, le katleho ea moruo, ho fana ka tharollo e sebetsang hantle haholo bakeng sa tlhahiso ea semiconductor. Li ntlafatsa haholo polokeho ea li-wafer, bohloeki, le katleho ea tlhahiso, li li etsa likarolo tsa bohlokoahali molemong oa ho etsa li-wafer tse tsoetseng pele.
Lisebelisoa tsa likepe tsa ceramic tsa SiC:
Likepe tsa SiC ceramic li sebelisoa haholo lits'ebetsong tsa semiconductor tse ka pele, ho kenyelletsa:
• Mehato ea ho Deposition: Tse kang LPCVD (Low-Pressure Chemical Vapor Deposition) le PECVD (Plasma-Enhanced Chemical Vapor Deposition).
• Liphekolo tsa Mocheso o Holimo: Ho kenyeletsoa oxidation ea mocheso, annealing, diffusion, le ion implantation.
• Mehato ea ho hloekisa le ho hloekisa: Mehato ea ho hloekisa le ho sebetsana le lik'hemik'hale.
E lumellana le maemo a sepakapaka le a vacuum,
li loketse masela a batlang ho fokotsa likotsi tsa tšoaetso le ho ntlafatsa katleho ea tlhahiso.
Lintlha tsa SiC Wafer Boat:
| Theknoloji Thepa | ||||
| Index | Yuniti | Boleng | ||
| Lebitso la Boitsebiso | Reaction Sintered Silicon Carbide | Pressureless Sintered Silicon Carbide | Recrystallized Silicon Carbide | |
| Sebopeho | RBSiC | SSiC | R-SiC | |
| Boima ba Bongata | g/cm3 | 3 | 3.15 ± 0.03 | 2.60-2,70 |
| Flexural Matla | MPa (kpsi) | 338(49) | 380(55) | 80-90 (20°C) 90-100(1400°C) |
| Matla a Khatellang | MPa (kpsi) | 1120(158) | 3970(560) | > 600 |
| Ho thatafala | Knoop | 2700 | 2800 | / |
| Qetello e Fetang | MPa m1/2 | 4.5 | 4 | / |
| Thermal Conductivity | W/mk | 95 | 120 | 23 |
| Coefficient ea Katoloso ea Thermal | 10-6.1/°C | 5 | 4 | 4.7 |
| Mocheso o khethehileng | Joule/g 0k | 0.8 | 0.67 | / |
| Mocheso o moholo moeeng | ℃ | 1200 | 1500 | 1600 |
| Elastic modulus | GPA | 360 | 410 | 240 |
Li-Ceramics tsa SiC tse fapaneng tse bonts'ang likarolo tse fapaneng tsa tloaelo
SiC Ceramic Membrane
SiC ceramic membrane ke tharollo e tsoetseng pele ea ho hloekisa e entsoeng ka silicon carbide e hloekileng, e nang le mohaho o matla oa mekhahlelo e meraro (lesela la ts'ehetso, lesela la phetoho, le lera la karohano) le entsoeng ka mekhoa e phahameng ea mocheso oa sintering. Moralo ona o netefatsa matla a ikhethang a mochini, kabo e nepahetseng ea boholo ba pore, le ho tšoarella ho ikhethang. E ipabola lits'ebetsong tse fapaneng tsa indasteri ka ho arola hantle, ho tsepamisa mohopolo le ho hloekisa maro. Ts'ebeliso ea mantlha e kenyelletsa ho hloekisa metsi le metsi a litšila (ho tlosa lintho tse thata tse emisitsoeng, libaktheria le lintho tse silafatsang tsa tlhaho), ts'ebetso ea lijo le lino (ho hlakisa le ho tšela lero, lebese le lino tse lomositsoeng), ts'ebetso ea meriana le biotechnology (ho hloekisa li-biofluids le li-intermediates), ts'ebetso ea lik'hemik'hale (ho sefa maro le metsi a senyang le oli e hlahisoang). ho tlosa tshilafatso).
Liphaephe tsa SiC
Li-tubes tsa SiC (silicon carbide) ke likaroloana tsa ceramic tse sebetsang hantle tse etselitsoeng lisebelisoa tsa sebōpi sa semiconductor, tse entsoeng ka silicon carbide e hloekileng e hloekileng ka ho fetisisa ka mekhoa e tsoetseng pele ea sintering. Li bonts'a mocheso o ikhethang oa mocheso, botsitso ba mocheso o phahameng (ho sa tsotellehe ho feta 1600 ° C), le lik'hemik'hale tse hanyetsanang le kutu. Li-coefficient tsa bona tse tlase tsa katoloso ea mocheso le matla a phahameng a mochini li netefatsa botsitso ba maemo tlas'a libaesekele tse futhumetseng haholo, ka mokhoa o atlehileng ho fokotsa khatello ea maikutlo le ho roala. Li-tubes tsa SiC li loketse libono tsa phallo, libono tsa oxidation, le lits'ebetso tsa LPCVD/PECVD, tse nolofalletsang kabo ea mocheso o ts'oanang le maemo a tsitsitseng a ts'ebetso ho fokotsa bofokoli ba wafer le ho ntlafatsa homogeneity ea filimi e tšesaane. Ho phaella moo, mohaho o teteaneng, o se nang porous le lik'hemik'hale tsa lik'hemik'hale tsa SiC li hanela khoholeho e tsoang likhase tse sebetsang tse kang oksijene, hydrogen, le ammonia, ho lelefatsa bophelo ba tšebeletso le ho netefatsa bohloeki ba ts'ebetso. Li-tubes tsa SiC li ka etsoa ka boholo le botenya ba marako, ka ho sebetsa ka mokhoa o nepahetseng ho finyella libaka tse ka hare tse boreleli le concentricity e phahameng ho tšehetsa phallo ea laminar le profiles tse leka-lekaneng tsa mocheso. Mekhoa ea ho bentša kapa ea ho roala holim'a metsi e boetse e fokotsa ho hlahisa likaroloana le ho matlafatsa ho hanyetsa ha kutu, ho finyella litlhoko tse thata tsa tlhahiso ea semiconductor bakeng sa ho nepahala le ho tšepahala.
SiC Ceramic Cantilever Paddle
Moqapi oa monolithic oa li-blades tsa SiC cantilever o matlafatsa haholo matla a mochine le ho tšoana ha mocheso ha o ntse o felisa manonyeletso le lintlha tse fokolang tse tloaelehileng ka thepa e kopantsoeng. Bokaholimo ba tsona bo bentšitsoe ka nepo ho isa pheletsong ea seipone, 'me bo fokotsa tlhahiso ea likaroloana le ho fihlela litekanyetso tsa phaposi ea bohloeki. Inertia ea tlhaho ea lik'hemik'hale ea SiC e thibela ho tsoa, ho bola, le ts'ilafalo ea ts'ebetso libakeng tse sebetsang hantle (mohlala, oksijene, mouoane), ho netefatsa botsitso le ts'epahalo lits'ebetsong tsa phallo / oxidation. Leha ho na le libaesekele tse potlakileng tsa mocheso, SiC e boloka botšepehi ba sebopeho, e lelefatsa bophelo ba ts'ebeletso le ho fokotsa nako ea ho lokisa. Sebopeho se bobebe sa SiC se thusa karabelo e potlakileng ea mocheso, ho potlakisa litheko tsa ho futhumatsa / pholileng le ho ntlafatsa tlhahiso le matla a matla. Li-blades tsena li fumaneha ka boholo bo ka khonehang (bo lumellana le 100mm ho isa ho 300mm + wafers) 'me li ikamahanya le meralo e fapaneng ea sebōpi, li fana ka ts'ebetso e tsitsitseng ka bobeli le mekhoa ea morao-rao ea semiconductor.
Kenyelletso ea Alumina Vacuum Chuck
Li-vacuum chucks tsa Al₂O₃ ke lisebelisoa tsa bohlokoa tlhahisong ea semiconductor, tse fanang ka ts'ehetso e tsitsitseng le e nepahetseng lits'ebetsong tse ngata:•Thinning: E fana ka ts'ehetso e ts'oanang nakong ea ho fokotsa liphaephe, ho netefatsa hore ho fokotsoa ka mokhoa o nepahetseng haholo oa "substrate" ho ntlafatsa phallo ea mocheso oa chip le ts'ebetso ea sesebelisoa.
•Dicing: E fana ka adsorption e bolokehileng nakong ea ho qoelisoa ha li-wafer, ho fokotsa likotsi tsa tšenyo le ho etsa bonnete ba hore li-chips li hloekile.
•Ho hloekisa: Sebaka sa eona se boreleli, se ts'oanang sa adsorption se thusa ho tlosa litšila ntle le ho senya liphaphatha nakong ea ho hloekisa.
•Transport—: E fana ka tshehetso e tshepehang le e bolokehileng nakong ya ho tshwara le ho tsamaisa wafer, ho fokotsa dikotsi tsa tshenyo le tshilafalo.

1. Uniform Micro-Porous Ceramic Technology
• E sebelisa li-nano-powders ho etsa li-pores tse arolelanoang ka ho lekana le tse hokahaneng, tse hlahisang porosity e phahameng le sebopeho se teteaneng ka mokhoa o ts'oanang bakeng sa tšehetso e tsitsitseng le e ka tšeptjoang.
2. Thepa e ikhethang ea thepa
-E entsoe ka 99.99% alumina ea ultra-pure (Al₂O₃), e bonts'a:
• Thermal Properties: Ho hanyetsa mocheso o phahameng le ho sebetsa hantle ha mocheso, ho loketse libaka tse phahameng tsa mocheso oa semiconductor.
• Mechanical Properties: Matla a phahameng le ho tiea ho netefatsa ho tšoarella, ho se mamelle, le bophelo bo bolelele ba tšebeletso.
• Melemo e Eketsehileng: Motlakase o phahameng o kentsoeng le ho thibela kutu, o ikamahanya le maemo a fapaneng a tlhahiso.
3. Bophahamo bo Phahameng le ho Bapana•E netefatsa ho sebetsanoa ka mokhoa o nepahetseng le o tsitsitseng oa liphaphatha tse nang le flatness e phahameng le ho bapisa, ho fokotsa likotsi tsa tšenyo le ho netefatsa liphetho tse tsitsitseng tsa ho sebetsa. Moea oa eona o motle oa ho kenella le matla a tšoanang a adsorption a eketsa ts'epahalo ea ts'ebetso.
Al₂O₃ vacuum chuck e kopanya theknoloji e tsoetseng pele ea li-micro-porous, thepa e ikhethang ea thepa, le ho nepahala ho phahameng, ho ts'ehetsa lits'ebetso tsa bohlokoa tsa semiconductor, ho netefatsa ts'ebetso, ts'epahalo, le taolo ea tšilafalo ho pholletsa le mekhahlelo ea ho sesa, ho qoela, ho hloekisa le ho tsamaisa.

Alumina Robot Arm & Alumina Ceramic End Effector Brief
Matsoho a liroboto tsa Alumina (Al₂O₃) ke likarolo tsa bohlokoa bakeng sa ho sebetsana le li-wafer ha ho etsoa li-semiconductor. Ba ikopanya ka kotloloho le li-wafers 'me ba ikarabella bakeng sa phetisetso e nepahetseng le ho beha maemong a thata joalo ka vacuum kapa maemo a mocheso o phahameng. Boleng ba bona ba mantlha bo mabapi le ho netefatsa polokeho ea li-wafer, ho thibela tšilafalo, le ho ntlafatsa ts'ebetso ea lisebelisoa le lihlahisoa ka thepa e ikhethang.
| Feature Dimension | Tlhaloso e Felletseng |
| Mechanical Properties | Alumina e hloekileng haholo (mohlala,> 99%) e fana ka boima bo phahameng (bothata ba Mohs ho fihla ho 9) le matla a feto-fetohang (ho fihla ho 250-500 MPa), e netefatsa ho hanyetsa le ho qoba ho senyeha, kahoo e lelefatsa bophelo ba tšebeletso.
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| Insulation ea motlakase | Thempereichara ea kamore e fihlang ho 10¹⁵ Ω·cm le matla a ho tiisa a 15 kV/mm—e thibela ka mokhoa o sebetsang electrostatic discharge (ESD), e sireletsang li-wafers tse nang le bokooa hore li se ke tsa kena-kenana le motlakase.
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| Thermal Stability | Sebaka se qhibilihang se fihlang ho 2050 ° C se thusa ho mamella mekhoa ea mocheso o phahameng (mohlala, RTA, CVD) tlhahisong ea semiconductor. Katoloso e tlase ea mocheso e fokotsa ho soahlamana le ho boloka botsitso tlas'a mocheso.
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| Ho se lekane ha lik'hemik'hale | Ho kenella ho li-acids tse ngata, li-alkalis, likhase tse sebetsang, le lisebelisoa tsa ho hloekisa, ho thibela tšilafalo ea likaroloana kapa ho lokolloa ha ion ea tšepe. Sena se tiisa tikoloho ea tlhahiso e hloekileng haholo 'me se qoba tšilafalo ea bokaholimo.
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| Melemo e meng | Theknoloji ea ho sebetsana le batho ba hōlileng e fana ka litšenyehelo tse phahameng; bokaholimo bo ka belisoa ka nepo ho isa bokhobeng bo tlase, e leng ho fokotsang likotsi tse ka hlahisoang ke likaroloana.
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Matsoho a liroboto tsa Alumina ceramic a sebelisoa haholo lits'ebetsong tsa tlhahiso ea li-semiconductor tse ka pele, ho kenyelletsa:
• Tšoaro ea Wafer le Positioning : Fetisetsa ka mokhoa o bolokehileng le ka mokhoa o nepahetseng liphaphatha (mohlala, boholo ba 100mm ho isa ho 300mm+) sebakeng sa vacuum kapa se hloekileng haholo, ho fokotsa tšenyo le likotsi tsa tšilafalo.
•High-Temperature Processes: Tse kang raid thermal annealing (RTA), chemical vapor deposition (CVD), le plasma etching, moo li bolokang botsitso tlas’a mocheso o phahameng, ho netefatsa ts’ebetso e tsitsitseng le chai.
•Automated Wafer Handling Systems: E kenyelelitsoe ho liroboto tse sebetsanang le liphaephe e le li-effectors tsa ho qetela ho tsamaisa phetisetso ea liphaephe lipakeng tsa lisebelisoa, ho ntlafatsa katleho ea tlhahiso.
Qetello
XKH e sebetsa ka ho khetheha ho R&D le tlhahiso ea lisebelisoa tsa silicon carbide (SiC) le alumina (Al₂O₃) tse entsoeng ka ceramic, ho kenyeletsoa matsoho a robotic, cantilever paddles, vacuum chucks, likepe tsa wafer, li-tubes tsa sebōpi le likarolo tse ling tse sebetsang hantle, tse sebeletsang li-semiconductors, matla a macha, sebaka sa moea le moea o phahameng. Re khomarela tlhahiso e nepahetseng, taolo e tiileng ea boleng, le mahlale a mahlale a morao-rao, a matlafatsang mekhoa e tsoetseng pele ea sintering (mohlala, sintering e se nang khatello, reaction sintering) le mekhoa e nepahetseng ea machining (mohlala, CNC grinding, polishing) ho netefatsa ho hanyetsa mocheso o phahameng, matla a mochini, ho se sebetse ha lik'hemik'hale, le ho nepahala ho nepahetseng. Re ts'ehetsa ho itloaetsa ho ipapisitse le lits'oants'o, ho fana ka litharollo tse hlophisitsoeng bakeng sa boholo, libopeho, liphetho tsa bokaholimo, le limaraka tsa thepa ho fihlela litlhoko tse ikhethileng tsa bareki. Re ikemiselitse ho fana ka likarolo tse ka tšeptjoang le tse sebetsang hantle tsa ceramic bakeng sa tlhahiso ea maemo a holimo lefatšeng ka bophara, ho ntlafatsa ts'ebetso ea lisebelisoa le katleho ea tlhahiso bakeng sa bareki ba rona.






























