Wafer ea Sapphire ea lisenthimithara tse 2 50.8mm C-Plane M-plane R-plane A-plane Botenya 350um 430um 500um

Wafer ea Sapphire ea lisenthimithara tse 2 50.8mm C-Plane M-plane R-plane A-plane Botenya 350um 430um 500um Setšoantšo se Hlahisitsoeng

Tlhaloso e Khutšoanyane:

Safira ke thepa e nang le motswako o ikhethang oa thepa ea 'mele, ea lik'hemik'hale le ea mahlo, e etsang hore e hanele mocheso o phahameng, ho thothomela ha mocheso, khoholeho ea metsi le lehlabathe, le ho ngoapa.

Romella imeile ho rona

Likaroloana

Tlhaloso ea litsela tse fapaneng

Boikutlo	C(0001)-Mokhahlelo		R(1-102)-Mokhahlelo		M(10-10) -Mokhahlelo	A(11-20)-Mokhahlelo
Thepa ea 'mele	Mokhahlelo oa C o na le khanya ea kristale, 'me li-axe tse ling li na le khanya e mpe. Plane C e bataletse, ka ho khetheha e sehiloe.		Sefofane sa R se thata hanyane ho feta A.		Sefofane sa M se na le sepekere se nang le litepisi, ha se bonolo ho se seha, se bonolo ho se seha.	Bothata ba A-plane bo phahame haholo ho feta ba C-plane, bo bonahatsoang ka ho hanyetsa ho tsofala, ho hanyetsa ho ngoapa le ho thatafala ho hoholo; Lehlakore la A-plane ke sefofane se kang zigzag, se bonolo ho se seha;
Likopo	Li-substrate tsa safire tse shebaneng le C li sebelisetsoa ho holisa lifilimi tse bolokiloeng tsa III-V le II-VI, tse kang gallium nitride, tse ka hlahisang lihlahisoa tsa LED tse putsoa, li-diode tsa laser, le lits'ebetso tsa ho lemoha mahlaseli a infrared. Lebaka le ka sehloohong ke hore ts'ebetso ea kholo ea kristale ea safire ho potoloha C-axis e butsoitse, litšenyehelo li tlase haholo, thepa ea 'mele le ea lik'hemik'hale li tsitsitse,' me theknoloji ea epitaxy holim'a C-plane e butsoitse ebile e tsitsitse.		Kgolo ya substrate e shebaneng le R ya di-extrasystal tse fapaneng tsa silicon tse bolokilweng, tse sebediswang dipotolohong tse kopaneng tsa microelectronics. Ho phaella moo, dipotoloho tse kopaneng tsa lebelo le phahameng le di-sensor tsa kgatello le tsona di ka thehwa tshebetsong ya tlhahiso ya filimi ya kgolo ya silicon ya epitaxial. Substrate ya mofuta wa R e ka boela ya sebediswa tlhahisong ya loto, dikarolo tse ding tse tsamaisang matla a ho fetisa, di-resistor tse hanyetsanang haholo, gallium arsenide.		E sebelisoa haholo-holo ho holisa lifilimi tsa GaN epitaxial tse seng polar/semi-polar ho ntlafatsa katleho ea khanya.	E shebaneng le substrate ya A e hlahisa permittivity/medium e tshwanang, mme tekanyo e phahameng ya insulation e sebediswa theknolojing ya di-microelectronics tse kopantsweng. Di-superconductor tsa mocheso o phahameng di ka hlahiswa ho tswa ho dikristale tse telele tsa A-base.
Bokhoni ba ho sebetsana	Sehlomathiso sa Sapphire sa Pattern (PSS): Ka sebopeho sa Kgolo kapa Ho Etching, dipaterone tsa sebopeho sa microstructure tse ikgethang tsa nanoscale di entswe mme tsa etswa hodima substrate ya safire ho laola sebopeho sa tlhahiso ya lesedi la LED, le ho fokotsa diphoso tse fapaneng hara GaN e melang hodima substrate ya safire, ho ntlafatsa boleng ba epitaxy, le ho ntlafatsa bokgoni ba ka hare ba quantum ba LED le ho eketsa bokgoni ba ho ntsha lesedi. Ho phaella moo, prism ea safire, seipone, lense, lesoba, khoune le likarolo tse ling tsa sebopeho li ka fetoloa ho latela litlhoko tsa bareki.
Phatlalatso ea thepa	Botenya	Bothata	ntlha ea ho qhibiliha	Letšoao la refractive (le bonahalang le la infrared)	Phetisetso (DSP)	Phetoho ea dielectric
Phatlalatso ea thepa	3.98g/cm3	9(likhoeli)	2053℃	1.762~1.770	≥85%	11.58@300K ho C axis (9.4 ho A axis)

Setšoantšo se qaqileng

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E fetileng: Lithium Niobate Wafer ea LiNbO3 LN ea lisenthimithara tse 8

E 'ngoe: Botenya ba lisenthimithara tse 2 50.8mm 0.1mm 0.2mm 0.43mm Wafer ea Sapphire C-Plane M-plane R-plane A-plane

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