2 inch 50.8mm Sapphire Wafer C-Plane M-plane R-plane A-plane Botenya 350um 430um 500um

2 inch 50.8mm Sapphire Wafer C-Plane M-plane R-plane A-plane Botenya 350um 430um 500um Featured Image

Tlhaloso e Khutšoanyane:

Sapphire ke thepa ea motsoako o ikhethang oa 'mele, lik'hemik'hale le lisebelisoa tsa optical, tse etsang hore e se ke ea hlola e e-ba mocheso o phahameng, mocheso oa mocheso, khoholeho ea metsi le lehlabathe, le ho phunya.

Re romelle lengolo-tsoibila

Lintlha tsa Sehlahisoa

Li-tag tsa Sehlahisoa

Tlhaloso ea li-orientation tse fapaneng

Boitloaelo	C(0001)-Axis		R(1-102)-Axis		M(10-10) -Axis	A(11-20)-Axis
Thepa ea nama	C axis e na le khanya ea kristale, 'me lilepe tse ling li na le khanya e mpe.Sefofane sa C se bataletse, ka ho khetheha se sehiloe.		Sefofane sa R se thata ho feta A.		M plane e hatakeloa serrated, ha ho bonolo ho seha, ho bonolo ho seha.	Boima ba sefofane sa A bo phahame haholo ho feta sefofane sa C, se bonts'ang ka ho hanyetsa ho apara, ho hanyetsa ho hanyetsa le ho thata haholo;Lehlakoreng la A-sefofane ke sefofane sa zigzag, seo ho leng bonolo ho se khaola;
Lisebelisoa	Li-substrates tsa safire tse shebaneng le C li sebelisetsoa ho holisa lifilimi tse kentsoeng ka III-V le II-VI, joalo ka gallium nitride, e ka hlahisang lihlahisoa tse boputsoa tsa LED, li-laser diode, le lisebelisoa tsa detector tsa infrared. Sena ke haholo-holo hobane mokhoa oa ho hōla ha kristale ea safire haufi le C-axis e hōlile, litšenyehelo li batla li le tlaase, thepa ea 'mele le ea lik'hemik'hale e tsitsitse,' me theknoloji ea epitaxy ka sefofane sa C e hōlile ebile e tsitsitse.		Kholo ea substrate e shebaneng le R ea li-extrasystals tse fapaneng tsa silicon, tse sebelisoang lipotolohong tse kopaneng tsa li-microelectronics. Ho phaella moo, lipotoloho tse kopantsoeng ka lebelo le phahameng le li-sensor tsa khatello li ka boela tsa thehoa ts'ebetsong ea tlhahiso ea filimi ea kholo ea epitaxial silicon.Substrate ea mofuta oa R e ka boela ea sebelisoa ho hlahisa loto, likarolo tse ling tsa superconducting, li-resistors tse phahameng tsa ho hanyetsa, gallium arsenide.		E sebelisoa haholo ho holisa lifilimi tsa epitaxial tsa non-polar/semi-polar GaN ho ntlafatsa katleho e khanyang.	E lebisitsoeng ho substrate e hlahisa tumello e lekanang / e bohareng, 'me tekanyo e phahameng ea ho kenya letsoho e sebelisoa ho theknoloji ea hybrid microelectronics.Li-superconductors tse phahameng tsa mocheso li ka hlahisoa ho tsoa ho likristale tse telele tsa A-base.
Bokhoni ba ho sebetsa	Mohlala oa Sapphire Substrate (PSS): Ka mokhoa oa Khōlo kapa Etching, lipaterone tsa nanoscale tse ikhethileng tse tloaelehileng li entsoe le ho etsoa holim'a sapphire substrate ho laola sebopeho sa khanya ea LED, le ho fokotsa mefokolo e fapaneng lipakeng tsa GaN e ntseng e hola holim'a sapphire substrate. , ntlafatsa boleng ba epitaxy, le ho ntlafatsa katleho ea ka hare ea LED le ho eketsa bokhoni ba ho ntša leseli. Ntle le moo, sapphire prism, seipone, lense, lesoba, cone le likarolo tse ling tsa sebopeho li ka etsoa ho latela litlhoko tsa bareki.
Phatlalatso ea thepa	Botenya	Ho thatafala	qhibiliha ntlha	Lenane la refractive (le bonahalang le infrared)	Phetiso (DSP)	Dielectric kamehla
Phatlalatso ea thepa	3.98g/cm3	9(mohs)	2053 ℃	1.762 ~ 1.770	≥85%	11.58@300K ho C axis(9.4 at Axis)

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