6inch HPSI SiC substrate wafer Silicon Carbide Semi-nyepa sa SiC safers

6inch HPSI SiC substrate wafer Silicon Carbide Semi-insulting SiC wafers Setšoantšo se hlahang

Tlhaloso e Khutšoanyane:

Sephaphatha sa kristale se le seng sa boleng bo holimo (Silicon Carbide ho tloha SICC) ho ea indastering ea elektroniki le ea optoelectronic.3inch SiC wafer ke thepa ea semiconductor ea moloko o latelang, liphaephe tse sireletsang silicon-carbide tse bophara ba lisenthimithara tse 3.Li-wafers li etselitsoe ho etsa lisebelisoa tsa motlakase, RF le optoelectronics.

Re romelle lengolo-tsoibila

Lintlha tsa Sehlahisoa

Li-tag tsa Sehlahisoa

PVT Silicon Carbide Crystal SiC Growth Technology

Mekhoa ea hona joale ea khōlo ea SiC single crystal haholo-holo e kenyelletsa tse tharo tse latelang: mokhoa oa mokelikeli oa mokelikeli, mokhoa o phahameng oa mocheso oa lik'hemik'hale oa mouoane, le mokhoa oa ho tsamaisa mouoane oa 'mele (PVT).Har'a tsona, mokhoa oa PVT ke theknoloji e batlisisitsoeng ka ho fetisisa le e hōlileng tsebong bakeng sa kholo ea SiC e le 'ngoe ea kristale,' me mathata a eona a tekheniki ke:

(1) SiC kristale e le 'ngoe ka mocheso o phahameng oa 2300 ° C ka holim'a kamore ea graphite e koetsoeng ho phethela ts'ebetso ea phetoho ea "solid - gas - solid", potoloho ea kholo e telele, e thata ho e laola, 'me e atisa ho ba le microtubules, inclusions le mefokolo e meng.

(2) Silicon carbide single kristale, ho kenyelletsa le mefuta e fetang 200 e fapaneng ea kristale, empa tlhahiso ea mofuta o le mong feela oa kristale, ho bonolo ho hlahisa phetoho ea mofuta oa kristale ts'ebetsong ea kholo e bakang mefokolo ea mefuta e mengata, ts'ebetso ea ho itokisa e le 'ngoe. mofuta o itseng oa kristale o thata ho laola botsitso ba ts'ebetso, mohlala, mokhoa o ka sehloohong oa mofuta oa 4H.

(3) Silicon carbide e le 'ngoe ea kristale e ntseng e hōla sebakeng sa mocheso ho na le mocheso oa mocheso, e leng se etsang hore ts'ebetso ea ho hōla ha kristale ho be le khatello ea kelello ea tlhaho ea tlhaho le ho senyeha ho bakoang ke ho senyeha, liphoso le mefokolo e meng.

(4) Silicon carbide e le 'ngoe ea kholo ea kristale e hloka ho laola ka thata ho kenngoa ha litšila tse ka ntle, e le ho fumana kristale e phahameng haholo e sireletsang semi-insulating kapa kristale e tsamaisoang ka tataiso.Bakeng sa li-semi-insulating silicon carbide substrates tse sebelisoang lisebelisoa tsa RF, thepa ea motlakase e hloka ho finyelloa ka ho laola khatello e tlase haholo ea litšila le mefuta e itseng ea mefokolo ea lintlha ka har'a kristale.