8 inch SiC silicon carbide wafer 4H-N mofuta oa 0.5mm oa sehlopha sa lipatlisiso sa tlhahiso ea sehlopha sa substrate e bentšitsoeng ka mokhoa o ikhethileng

8 inch SiC silicon carbide wafer 4H-N mofuta wa 0.5mm tlhahiso ya sehlopha sa dipatlisiso sa sehlopha sa substrate e bentšitsoeng ka mokhoa o ikgethang Setšoantšo se Hlahisitsoeng

Tlhaloso e Khutšoanyane:

Silicon carbide (SiC), e tsejoang hape e le silicon carbide, ke semiconductor e nang le silicon le carbon ka mokhoa oa lik'hemik'hale oa SiC. SiC e sebelisoa lisebelisoa tsa elektroniki tsa semiconductor tse sebetsang mochesong o phahameng kapa khatello e phahameng, kapa ka bobeli. SiC hape ke e 'ngoe ea likarolo tsa bohlokoa tsa LED, ke substrate e tloaelehileng bakeng sa ho holisa lisebelisoa tsa GaN, 'me e ka boela ea sebelisoa e le sinki ea mocheso bakeng sa li-LED tse matla haholo.
Substrate ea silicon carbide ea lisenthimithara tse 8 ke karolo ea bohlokoa ea moloko oa boraro oa thepa ea semiconductor, e nang le litšobotsi tsa matla a tšimo a ho senyeha ho hoholo, ho khanna ha mocheso ho phahameng, sekhahla se phahameng sa ho kheloha ha lielektrone, jj., 'me e loketse ho etsa lisebelisoa tsa elektroniki tsa mocheso o phahameng, tsa motlakase o phahameng le tse matla a phahameng. Masimo a eona a mantlha a ts'ebeliso a kenyelletsa likoloi tsa motlakase, lipalangoang tsa terene, phetiso le phetoho ea motlakase o phahameng, li-photovoltaics, puisano ea 5G, polokelo ea matla, litsi tsa data tsa matla a sefofane le tsa khomphutha ea AI.

Romella imeile ho rona

Likaroloana

Likarolo tsa mantlha tsa substrate ea silicon carbide ea lisenthimithara tse 8 tsa mofuta oa 4H-N li kenyelletsa:

1. Bongata ba microtubule: ≤ 0.1/cm² kapa ka tlase, jwalo ka ha bongata ba microtubule bo fokotsehile haholo ho ba ka tlase ho 0.05/cm² dihlahisweng tse ding.
2. Karolelano ea sebopeho sa kristale: Karolelano ea sebopeho sa kristale ea 4H-SiC e fihla ho 100%.
3. Ho hanyetsa: 0.014~0.028 Ω·cm, kapa ho tsitsisa ho feta pakeng tsa 0.015-0.025 Ω·cm.
4. Ho ba thata ha bokaholimo: CMP Si Face Ra≤0.12nm.
5. Botenya: Hangata 500.0±25μm kapa 350.0±25μm.
6. Sekhutlo sa ho tjhesa: 25±5° kapa 30±5° bakeng sa A1/A2 ho latela botenya.
7. Bongata ba ho falla ha lehare: ≤3000/cm².
8. Tšilafalo ea tšepe ea bokaholimo: ≤1E+11 liathomo/cm².
9. Ho kobeha le ho phunya: ≤ 20μm le ≤2μm, ka ho latellana.
Litšobotsi tsena li etsa hore li-substrate tsa silicon carbide tsa lisenthimithara tse 8 li be le bohlokoa ba ts'ebeliso tlhahisong ea lisebelisoa tsa elektroniki tse nang le mocheso o phahameng, maqhubu a phahameng le matla a phahameng.

Wafer ea carbide ea silicon ea lisenthimithara tse 8 e na le lits'ebetso tse 'maloa.

1. Lisebelisoa tsa motlakase: Li-wafer tsa SiC li sebelisoa haholo tlhahisong ea lisebelisoa tsa motlakase tsa motlakase tse kang li-MOSFET tsa motlakase (li-transistors tsa tšepe-oxide-semiconductor field-effect), li-diode tsa Schottky, le li-module tsa kopanyo ea motlakase. Ka lebaka la conductivity e phahameng ea mocheso, motlakase o phahameng oa ho senyeha, le motsamao o phahameng oa li-elektrone oa SiC, lisebelisoa tsena li ka finyella phetoho e sebetsang hantle le e sebetsang hantle ea matla libakeng tse nang le mocheso o phahameng, motlakase o phahameng le maqhubu a phahameng.

2. Lisebelisoa tsa Optoelectronic: Li-wafer tsa SiC li bapala karolo ea bohlokoa lisebelisoa tsa optoelectronic, tse sebelisetsoang ho etsa li-photodetector, li-laser diode, mehloli ea ultraviolet, jj. Thepa e phahameng ea optical le elektroniki ea Silicon carbide e etsa hore e be thepa e khethiloeng, haholo-holo lits'ebetsong tse hlokang mocheso o phahameng, maqhubu a phahameng le maemo a phahameng a matla.

3. Lisebelisoa tsa Maqhubu a Radio (RF): Li-chip tsa SiC li boetse li sebelisoa ho etsa lisebelisoa tsa RF tse kang li-amplifier tsa matla a RF, li-switch tsa maqhubu a phahameng, li-sensor tsa RF, le tse ling. Botsitso bo phahameng ba mocheso ba SiC, litšobotsi tsa maqhubu a phahameng, le tahlehelo e tlase li etsa hore e be e loketseng lits'ebetso tsa RF tse kang puisano ea waelese le litsamaiso tsa radar.

4. Di-elektroniki tse nang le mocheso o phahameng: Ka lebaka la botsitso ba tsona bo phahameng ba mocheso le ho tenyetseha ha mocheso, di-wafer tsa SiC di sebediswa ho hlahisa dihlahiswa tsa elektroniki tse reretsweng ho sebetsa dibakeng tse nang le mocheso o phahameng, ho kenyeletswa le di-elektroniki tse nang le motlakase o phahameng, di-sensor le balaodi.

Litsela tse ka sehloohong tsa ts'ebeliso ea substrate ea silicon carbide ea lisenthimithara tse 8 ea mofuta oa 4H-N li kenyelletsa tlhahiso ea lisebelisoa tsa elektroniki tse nang le mocheso o phahameng, maqhubu a phahameng le matla a phahameng, haholo-holo masimong a lisebelisoa tsa elektroniki tsa likoloi, matla a letsatsi, tlhahiso ea matla a moea, literene tsa motlakase, li-server, lisebelisoa tsa lapeng le likoloi tsa motlakase. Ho phaella moo, lisebelisoa tse kang SiC MOSFET le Schottky diode li bontšitse ts'ebetso e ntle haholo maqhubung a ho fetola, liteko tsa potoloho e khuts'oane, le lits'ebetsong tsa inverter, li khanna ts'ebeliso ea tsona lielektronikeng tsa motlakase.

XKH e ka etsoa ka botenya bo fapaneng ho latela litlhoko tsa bareki. Ho na le mekhoa e fapaneng ea ho rarahana ha bokaholimo le ho bentša. Mefuta e fapaneng ea ho sebelisa doping (joalo ka ho sebelisa naetrojene) ea tšehetsoa. XKH e ka fana ka tšehetso ea tekheniki le lits'ebeletso tsa boeletsi ho netefatsa hore bareki ba ka rarolla mathata ts'ebetsong ea ts'ebeliso. Substrate ea silicon carbide ea lisenthimithara tse 8 e na le melemo e meholo mabapi le phokotso ea litšenyehelo le bokhoni bo eketsehileng, e leng se ka fokotsang litšenyehelo tsa yuniti ea chip ka hoo e ka bang 50% ha e bapisoa le substrate ea lisenthimithara tse 6. Ho phaella moo, botenya bo eketsehileng ba substrate ea lisenthimithara tse 8 bo thusa ho fokotsa ho kheloha ha geometrical le ho sotha ha bohale nakong ea machining, ka hona ho ntlafatsa chai.