8 inch SiC silicon carbide wafer 4H-N mofuta oa 0.5mm tlhahiso ea sehlopha sa lipatlisiso sehlopheng sa moetlo o bentšitsoeng

8 inch SiC silicon carbide wafer 4H-N mofuta oa 0.5mm tlhahiso ea sehlopha sa lipatlisiso sehlopheng sa tloaelo se betliloeng sa substrate Featured Image

Tlhaloso e Khutšoanyane:

Silicon carbide (SiC), eo hape e tsejoang e le silicon carbide, ke semiconductor e nang le silicon le carbon e nang le foromo ea lik'hemik'hale SiC. SiC e sebelisoa lisebelisoa tsa elektronike tsa semiconductor tse sebetsang ka mocheso o phahameng kapa likhatello tse phahameng, kapa ka bobeli. SiC hape ke e 'ngoe ea likarolo tsa bohlokoa tsa LED, ke karolo e tloaelehileng ea lisebelisoa tsa GaN tse ntseng li hola, hape e ka sebelisoa e le sets'oants'o sa mocheso bakeng sa li-LED tse matla a phahameng.
8-inch silicon carbide substrate ke karolo ea bohlokoa ea moloko oa boraro oa thepa ea semiconductor, e nang le litšobotsi tsa matla a maholo a ho senyeha ha tšimo, mocheso o phahameng oa mocheso, lebelo le phahameng la ho phalla ha elektronike, joalo-joalo, 'me e loketse ho etsa mocheso o phahameng. lisebelisoa tsa elektronike tse matla haholo, le tse matla haholo. Libaka tsa eona tse ka sehloohong tsa ts'ebeliso li kenyelletsa likoloi tsa motlakase, lipalangoang tsa terene, phetisetso ea matla a matla a matla le phetoho, photovoltaics, puisano ea 5G, polokelo ea matla, sebaka sa sefofane, le litsi tsa data tsa AI tsa mantlha tsa khomphutha.

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Lintlha tsa Sehlahisoa

Li-tag tsa Sehlahisoa

Likarolo tsa mantlha tsa mofuta oa 8-inch silicon carbide substrate 4H-N li kenyelletsa:

1. Microtubule density: ≤ 0.1/cm² kapa tlase, joalo ka microtubule density e fokotsehile haholo ho isa tlase ho 0.05/cm² lihlahisoa tse ling.
2. Karolelano ea foromo ea Crystal: Karo-karolelano ea foromo ea kristale ea 4H-SiC e fihla ho 100%.
3. Resistivity: 0.014~0.028 Ω·cm, kapa e tsitsitseng ho feta pakeng tsa 0.015-0.025 Ω·cm.
4. Bokaholimo ba sefahleho: CMP Si Face Ra≤0.12nm.
5. Botenya: Hangata 500.0±25μm kapa 350.0±25μm.
6. Chamfering angle: 25 ± 5 ° kapa 30 ± 5 ° bakeng sa A1 / A2 ho itšetlehile ka botenya.
7. Kakaretso ea khatello ea maikutlo: ≤3000 / cm².
8. Tšilafalo ea tšepe ea bokaholimo: ≤1E+11 liathomo/cm².
9. Ho kheloha le warpage: ≤ 20μm le ≤2μm, ka ho latellana.
Litšobotsi tsena li etsa hore 8-inch silicon carbide substrates e be le boleng ba ts'ebeliso ea bohlokoa ha ho etsoa lisebelisoa tsa elektronike tse nang le mocheso o phahameng, maqhubu a phahameng le matla a phahameng.

8inch silicon carbide wafer e na le lits'ebetso tse 'maloa.

1. Lisebelisoa tsa motlakase: Li-wafers tsa SiC li sebelisoa haholo ha ho etsoa lisebelisoa tsa elektronike tse matla tse kang matla a MOSFET (metal-oxide-semiconductor field-effect transistors), Schottky diode, le li-module tsa ho kopanya matla. Ka lebaka la mocheso o phahameng oa mocheso, matla a phahameng a ho senyeha ha matla, le ho tsamaea ha elektronike e phahameng ea SiC, lisebelisoa tsena li ka finyella phetoho e sebetsang hantle, e phahameng ea ts'ebetso ea matla ka mocheso o phahameng, o nang le matla a mangata le a mangata.

2. Lisebelisoa tsa Optoelectronic: Li-wafers tsa SiC li phetha karolo ea bohlokoa ho lisebelisoa tsa optoelectronic, tse sebelisetsoang ho etsa li-photodetectors, laser diode, mehloli ea mahlaseli a kotsi, joalo-joalo. Lintho tse phahameng tsa Silicon carbide tsa optical le elektronike li etsa hore e be thepa ea khetho, haholo-holo lits'ebetsong tse hlokang mocheso o phahameng, maqhubu a phahameng, le maemo a phahameng a matla.

3. Lisebelisoa tsa Radio Frequency (RF): Li-chips tsa SiC li boetse li sebelisetsoa ho etsa lisebelisoa tsa RF tse kang li-amplifiers tsa matla a RF, li-switches tse phahameng, li-sensors tsa RF, le tse ling. Botsitso bo phahameng ba mocheso oa SiC, litšoaneleho tsa maqhubu a phahameng, le tahlehelo e tlase li etsa hore e be e loketseng lits'ebetso tsa RF joalo ka likhokahano tse se nang mohala le lisebelisoa tsa radar.

4.Lisebelisoa tsa elektronike tse nang le mocheso o phahameng: Ka lebaka la botsitso ba tsona bo phahameng ba mocheso le mocheso oa mocheso, li-wafers tsa SiC li sebelisetsoa ho hlahisa lihlahisoa tsa elektronike tse etselitsoeng ho sebetsa libakeng tse phahameng tsa mocheso, ho kenyelletsa le lisebelisoa tsa elektronike tse matla, li-sensor le balaoli.

Mekhoa ea mantlha ea ts'ebeliso ea mofuta oa 8-inch silicon carbide substrate 4H-N e kenyelletsa tlhahiso ea lisebelisoa tsa elektronike tse nang le mocheso o phahameng, maqhubu a phahameng le matla a phahameng, haholo-holo lefapheng la lisebelisoa tsa motlakase tsa likoloi, matla a letsatsi, tlhahiso ea matla a moea, motlakase. literene, li-server, lisebelisoa tsa lapeng, le likoloi tsa motlakase. Ho feta moo, lisebelisoa tse kang SiC MOSFETs le Schottky diode li bonts'itse ts'ebetso e ntle haholo ea ho fetola maqhubu, liteko tsa nako e khuts'oane, le lisebelisoa tsa inverter, tse tsamaisang ts'ebeliso ea tsona ho lisebelisoa tsa motlakase tsa motlakase.

XKH e ka etsoa ka botenya bo fapaneng ho latela litlhoko tsa bareki. Ho na le mefuta e fapaneng ea liphekolo tsa ho roala holimo le ho bentša. Mefuta e fapaneng ea doping (joalo ka nitrogen doping) e tšehetsoa. XKH e ka fana ka ts'ehetso ea tekheniki le lits'ebeletso tsa boeletsi ho netefatsa hore bareki ba ka rarolla mathata nakong ea ts'ebeliso. Karolo ea 8-inch silicon carbide substrate e na le melemo e mengata mabapi le ho fokotsa litšenyehelo le ho eketseha ha bokhoni, e ka fokotsang litšenyehelo tsa unit chip ka hoo e ka bang 50% ha e bapisoa le substrate ea 6-inch. Ho feta moo, botenya bo ntseng bo eketseha ba 8-inch substrate bo thusa ho fokotsa ho kheloha ha li-geometrical le ho phunya ka bohale nakong ea machining, kahoo ho ntlafatsa chai.