Li-substrate tsa Semiconductor tsa Moloko o Latelang: Sapphire, Silicon, le Silicon Carbide

Indastering ea semiconductor, li-substrate ke thepa ea motheo eo ts'ebetso ea sesebelisoa e itšetlehileng ka eona. Thepa ea tsona ea 'mele, ea mocheso le ea motlakase e ama ka kotloloho katleho, ts'epo le boholo ba ts'ebeliso. Har'a likhetho tsohle, safire (Al₂O₃), silicon (Si), le silicon carbide (SiC) e se e le li-substrate tse sebelisoang haholo, e 'ngoe le e 'ngoe e ipabola libakeng tse fapaneng tsa theknoloji. Sengoloa sena se hlahloba litšobotsi tsa tsona tsa thepa, libaka tsa ts'ebeliso le mekhoa ea nts'etsopele ea nakong e tlang.

Sapphire: Pere ea Mosebetsi ea Optical

Sapphire ke mofuta o le mong oa aluminium oxide o nang le kristale e le 'ngoe e nang le lattice e nang le mahlakore a tšeletseng. Litšobotsi tsa eona tsa bohlokoa li kenyelletsa ho thatafala ho ikhethang (ho thatafala ha Mohs 9), ho pepeseha ha optical ho tloha ho ultraviolet ho ea ho infrared, le ho hanyetsa lik'hemik'hale ka matla, e leng se etsang hore e be e loketseng lisebelisoa tsa optoelectronic le libaka tse thata. Mekhoa e tsoetseng pele ea kholo joalo ka Heat Exchange Method le mokhoa oa Kyropoulos, hammoho le chemical-mechanical polishing (CMP), li hlahisa li-wafer tse nang le ho hlaka ha bokaholimo ba sub-nanometer.

Fensetere e Ikhethileng ea Karolo ea Optical e Bōpiloeng ke Sapphire

Di-substrate tsa sapphire di sebediswa haholo ho di-LED le di-Micro-LED e le di-layers tsa GaN epitaxial, moo di-substrate tsa sapphire tse nang le dipaterone (PSS) di ntlafatsang bokgoni ba ho ntsha lesedi. Di boetse di sebediswa disebedisweng tsa RF tse nang le maqhubu a hodimo ka lebaka la thepa ya tsona ya ho kenya motlakase, le disebedisweng tsa elektroniki tsa bareki le tsa sefofane e le difensetere tse sireletsang le dikoahelo tsa sensor. Meedi e kenyeletsa ho tsamaisa mocheso ka tlase haholo (35–42 W/m·K) le ho se tsamaisane ha lattice le GaN, e leng se hlokang di-buffer layers ho fokotsa diphoso.

Silicon: Motheo oa Microelectronics

Silicon e ntse e le mokokotlo oa lisebelisoa tsa elektroniki tsa setso ka lebaka la tikoloho ea eona e hōlileng ea indasteri, ho tsamaisoa ha motlakase ho fetoloang ka ho sebelisa lithethefatsi, le thepa e itekanetseng ea mocheso (ho tsamaisoa ha mocheso ~150 W/m·K, ntlha ea ho qhibiliha 1410°C). Ho feta 90% ea lipotoloho tse kopantsoeng, ho kenyeletsoa li-CPU, lisebelisoa tsa memori le tsa logic, li etsoa holim'a li-wafer tsa silicon. Silicon e boetse e laola lisele tsa photovoltaic 'me e sebelisoa haholo lisebelisoa tsa motlakase o tlase ho isa bohareng joalo ka li-IGBT le li-MOSFET.

Leha ho le jwalo, silicon e tobane le diphephetso ditshebedisong tsa motlakase o phahameng le maqhubu a phahameng ka lebaka la lekhalo la yona le lesesaane la bandgap (1.12 eV) le lekhalo le sa tobang la bandgap, e leng se fokotsang bokgoni ba ho ntsha kgase.

Silicon Carbide: Moqapi ea Matla a Phahameng

SiC ke thepa ea semiconductor ea moloko oa boraro e nang le bandgap e pharaletseng (3.2 eV), motlakase o phahameng oa ho phatloha (3 MV/cm), motlakase o phahameng oa ho tsamaisa mocheso (~490 W/m·K), le lebelo le potlakileng la ho sata ha lielektrone (~2×10⁷ cm/s). Litšobotsi tsena li etsa hore e be e loketseng lisebelisoa tse nang le motlakase o phahameng, matla a phahameng le maqhubu a phahameng. Li-substrate tsa SiC hangata li lengoa ka lipalangoang tsa mouoane oa 'mele (PVT) mochesong o fetang 2000°C, ka litlhoko tse rarahaneng le tse nepahetseng tsa ts'ebetso.

Ditshebediso di kenyeletsa dikoloi tsa motlakase, moo SiC MOSFET e ntlafatsang bokgoni ba inverter ka 5–10%, ditsamaiso tsa puisano tsa 5G tse sebedisang SiC e thibelang mocheso bakeng sa disebediswa tsa GaN RF, le digridi tse bohlale tse nang le phetiso ya motlakase o otlolohileng wa motlakase o phahameng (HVDC) tse fokotsang tahlehelo ya matla ka ho fihla ho 30%. Meeli ke ditjeo tse hodimo (di-wafer tsa di-inch tse 6 di bitsa tjhelete e ngata ka makgetlo a 20–30 ho feta silicon) le diphephetso tsa ho sebetsana le tsona ka lebaka la ho thatafala ho feteletseng.

Mesebetsi e Tlatsetsang le Tebello ea Bokamoso

Safira, silicon, le SiC li theha tikoloho e tlatsetsang ea substrate indastering ea semiconductor. Safira e laola li-optoelectronics, silicon e tšehetsa li-microelectronics tsa setso le lisebelisoa tsa motlakase tse tlase ho isa bohareng, 'me SiC e etella pele li-elektroniki tsa motlakase tse nang le motlakase o phahameng, maqhubu a phahameng le bokhoni bo phahameng.

Lintlafatso tsa nakong e tlang li kenyelletsa ho atolosa lits'ebetso tsa safire ho li-LED tse tebileng tsa UV le li-micro-LED, ho nolofalletsa heteroepitaxy ea GaN e thehiloeng ho Si ho ntlafatsa ts'ebetso ea maqhubu a phahameng, le ho eketsa tlhahiso ea SiC wafer ho fihlela ho lisenthimithara tse 8 ka chai e ntlafetseng le bokhoni ba litšenyehelo. Hammoho, lisebelisoa tsena li khanna boqapi ho pholletsa le 5G, AI, le motsamao oa motlakase, li bopa moloko o latelang oa theknoloji ea semiconductor.


Nako ea poso: Pulungoana-24-2025