SiC silicon carbidesesebelisoa se bua ka sesebelisoa se entsoeng ka silicon carbide e le thepa e tala.
Ho ea ka thepa e fapaneng ea ho hanyetsa, e arotsoe ka lisebelisoa tsa motlakase tsa conductive silicon carbide lesemi-insulated silicon carbideLisebelisoa tsa RF.
Mefuta e ka sehloohong ea lisebelisoa le lisebelisoa tsa silicon carbide
Melemo e ka sehloohong ea SiC ho fetaSi lisebelisoake:
SiC e na le lekhalo la sehlopha ka makhetlo a 3 ho feta Si, e ka fokotsang ho lutla le ho eketsa mamello ea mocheso.
SiC e na le makhetlo a 10 ho feta matla a tšimo ea Si, e ka ntlafatsa sekhahla sa hona joale, maqhubu a ts'ebetso, ho mamella matla a motlakase le ho fokotsa tahlehelo ea ho tima, e loketseng haholoanyane bakeng sa lisebelisoa tse phahameng tsa motlakase.
SiC e na le lebelo la elektrone saturation drift habeli la Si, kahoo e ka sebetsa ka lebelo le holimo.
SiC e na le makhetlo a 3 ho feta mocheso oa mocheso oa Si, ts'ebetso e ntle ea ho senya mocheso, e ka tšehetsa matla a matla a matla le ho fokotsa litlhoko tsa ho senya mocheso, ho etsa hore sesebelisoa se be bobebe.
Conductive substrate
Conductive substrate: Ka ho tlosa litšila tse fapaneng ka har'a kristale, haholo-holo litšila tse sa tebang, ho fihlela matla a kahare a kristale.
E tsamaisangkarolo ea silicon carbideSephaphatha sa SiC
Sesebediswa sa matla sa silicon carbide ke ka ho hola ha silicon carbide epitaxial layer ho conductive substrate, letlapa la silicon carbide epitaxial le ntse le sebetsoa, ho kenyeletsoa tlhahiso ea Schottky diode, MOSFET, IGBT, joalo-joalo, e sebelisoang haholo likoloing tsa motlakase, matla a photovoltaic. tlhahiso, lipalangoang tsa terene, setsi sa data, ho tjhaja le lisebelisoa tse ling. Melemo ea ts'ebetso ke e latelang:
Litšobotsi tse ntlafalitsoeng tsa khatello e phahameng. Matla a silicon carbide a senyehang a feta makhetlo a 10 ho feta a silicon, e leng se etsang hore ho hanyetsa khatello e phahameng ea lisebelisoa tsa silicon carbide ho phahame haholo ho feta lisebelisoa tse lekanang tsa silicon.
Litšobotsi tse molemo tsa mocheso o phahameng. Silicon carbide e na le conductivity e phahameng ea mocheso ho feta silicon, e etsang hore mocheso oa mochine o be bonolo le ho fokotsa mocheso oa mocheso o phahameng. Ho hanyetsa mocheso o phahameng ho ka etsa hore ho be le keketseho e kholo ea matla a matla, ha ho ntse ho fokotsa litlhoko tsa tsamaiso ea pholileng, e le hore terminal e ka ba e bobebe haholoanyane le e nyenyane.
Tšebeliso e tlase ea matla. ① Sesebelisoa sa Silicon carbide se na le khanyetso e tlase haholo le tahlehelo e tlase; (2) Hona joale ho lutla ha lisebelisoa tsa silicon carbide ho fokotsehile haholo ho feta lisebelisoa tsa silicon, ka hona ho fokotsa tahlehelo ea matla; ③ Ha ho na ts'ebetso ea hona joale ea mohatla ts'ebetsong ea ho tima lisebelisoa tsa silicon carbide, 'me tahlehelo ea ho fetoha e tlaase, e leng ho ntlafatsang haholo ho fetola maqhubu a lisebelisoa tse sebetsang.
Semi-insulated SiC substrate: N doping e sebelisoa ho laola ka nepo ho hanyetsa ha lihlahisoa tsa conductive ka ho lekanya kamano e tsamaellanang lipakeng tsa nitrogen doping concentration, sekhahla sa kholo le kristale resistivity.
Bohloeki bo phahameng ba semi-insulating substrate lintho tse bonahalang
Lisebelisoa tsa RF tse entsoeng ka semi-insulated silicon carbon-based li etsoa hape ka ho hola gallium nitride epitaxial layer holim'a semi-insulated silicon carbide substrate ho lokisa silicon nitride epitaxial sheet, ho kenyeletsoa HEMT le lisebelisoa tse ling tsa gallium nitride RF, tse sebelisoang haholo lipuisanong tsa 5G, puisano ea koloi. lits'ebetso tsa ts'ireletso, phetiso ea data, sebaka sa sefofane.
Sekhahla se matla sa silicon carbide le gallium nitride ke makhetlo a 2.0 le 2.5 ho feta a silicon ka ho latellana, kahoo lebelo la ts'ebetso ea lisebelisoa tsa silicon carbide le gallium nitride le leholo ho feta la lisebelisoa tse tloaelehileng tsa silicon. Leha ho le joalo, thepa ea gallium nitride e na le bothata ba ho hanyetsa mocheso o fokolang, ha silicon carbide e na le mocheso o motle oa ho hanyetsa le mocheso oa mocheso, o ka etsang hore ho be le mocheso o futsanehileng oa lisebelisoa tsa gallium nitride, kahoo indasteri e nka silicon carbide e nang le semi-insulated e le substrate. , 'me gan epitaxial layer e holisoa holim'a silicon carbide substrate ho etsa lisebelisoa tsa RF.
Haeba ho na le tlolo ea molao, hlakola lebitso
Nako ea poso: Jul-16-2024