English

SiC silicon carbide wafer SiC wafer 4H-N 6H-N HPSI (High purity Semi-Insulating) 4H/6H-P 3C -n mofuta 2 3 4 6 8inch fumaneha

SiC silicon carbide wafer SiC wafer 4H-N 6H-N HPSI(High purity Semi-Insulating) 4H/6H-P 3C -n mofuta 2 3 4 6 8inch fumaneha Featured Image
  • SiC silicon carbide wafer SiC wafer 4H-N 6H-N HPSI (High purity Semi-Insulating) 4H/6H-P 3C -n mofuta 2 3 4 6 8inch fumaneha
  • SiC silicon carbide wafer SiC wafer 4H-N 6H-N HPSI (High purity Semi-Insulating) 4H/6H-P 3C -n mofuta 2 3 4 6 8inch fumaneha
  • SiC silicon carbide wafer SiC wafer 4H-N 6H-N HPSI (High purity Semi-Insulating) 4H/6H-P 3C -n mofuta 2 3 4 6 8inch fumaneha
  • SiC silicon carbide wafer SiC wafer 4H-N 6H-N HPSI (High purity Semi-Insulating) 4H/6H-P 3C -n mofuta 2 3 4 6 8inch fumaneha
  • SiC silicon carbide wafer SiC wafer 4H-N 6H-N HPSI (High purity Semi-Insulating) 4H/6H-P 3C -n mofuta 2 3 4 6 8inch fumaneha
  • SiC silicon carbide wafer SiC wafer 4H-N 6H-N HPSI (High purity Semi-Insulating) 4H/6H-P 3C -n mofuta 2 3 4 6 8inch fumaneha

Tlhaloso e Khutšoanyane:

Re fana ka likhetho tse fapaneng tsa liphaephe tsa boleng bo holimo tsa SiC (Silicon Carbide), tse tsepamisitseng maikutlo haholo liphaepheng tsa mofuta oa N-4H-N le 6H-N, tse loketseng ts'ebeliso ea li-optoelectronics tse tsoetseng pele, lisebelisoa tsa motlakase le libaka tse nang le mocheso o phahameng. . Li-wafers tsena tsa mofuta oa N li tsejoa ka mokhoa oa tsona oa ho futhumatsa mocheso o ikhethang, botsitso bo ikhethang ba motlakase, le ho tšoarella ho makatsang, ho li etsa hore li phethahale bakeng sa lits'ebetso tse sebetsang hantle joalo ka lisebelisoa tsa elektroniki tsa motlakase, litsamaiso tsa ho khanna likoloi tsa motlakase, li-inverters tse nchafalitsoeng le lisebelisoa tsa motlakase tsa indasteri. Ntle le linyehelo tsa rona tsa mofuta oa N, re boetse re fana ka li-wafers tsa P-type 4H/6H-P le 3C SiC bakeng sa litlhoko tse khethehileng, ho kenyelletsa le lisebelisoa tse phahameng tsa maqhubu le tsa RF, hammoho le lisebelisoa tsa photonic. Li-wafers tsa rona li fumaneha ka boholo ho tloha ho 2 inches ho ea ho 8 inches, 'me re fana ka litharollo tse hlophisitsoeng ho finyella litlhoko tse khethehileng tsa likarolo tse fapaneng tsa indasteri. Bakeng sa lintlha tse ling kapa lipotso, ka kopo ikutloe u lokolohile ho ikopanya le rona.


Lintlha tsa Sehlahisoa

Li-tag tsa Sehlahisoa

Thepa

4H-N le 6H-N (N-mofuta oa SiC Wafers)

Kopo:Haholo-holo e sebelisoa ho lisebelisoa tsa motlakase tsa motlakase, li-optoelectronics, le lits'ebetsong tsa mocheso o phahameng.

Sebaka sa Diameter:50.8 mm ho isa ho 200 mm.

Botenya:350 μm ± 25 μm, ka botenya ba boikhethelo ba 500 μm ± 25 μm.

Resistivity:N-mofuta oa 4H / 6H-P: ≤ 0.1 Ω · cm (Z-grade), ≤ 0.3 Ω · cm (P-grade); N-mofuta 3C-N: ≤ 0.8 mΩ·cm (Z-grade), ≤ 1 mΩ·cm (P-grade).

Bokhopo:Ra ≤ 0.2 nm (CMP kapa MP).

Boima ba Micropipe (MPD):<1 ea/cm².

TTV: ≤ 10 μm bakeng sa bophara bohle.

Warp: ≤ 30 μm (≤ 45 μm bakeng sa li-wafers tse 8-inch).

Kenyelletso ea Edge:3 limilimithara ho 6 limilimithara ho itšetlehile ka mofuta oa sephaphatha.

Sephutheloana:Multi-wafer cassette kapa single wafer setshelo.

Ohter boholo bo fumanehang 3inch 4inch 6inch 8inch

HPSI (High Purity Semi-Insulating SiC Wafers)

Kopo:E sebelisoa bakeng sa lisebelisoa tse hlokang khanyetso e phahameng le ts'ebetso e tsitsitseng, joalo ka lisebelisoa tsa RF, lisebelisoa tsa photonic, le li-sensor.

Sebaka sa Diameter:50.8 mm ho isa ho 200 mm.

Botenya:Botenya bo tloaelehileng ba 350 μm ± 25 μm ka likhetho tsa li-wafers tse teteaneng ho fihla ho 500 μm.

Bokhopo:Ra ≤ 0.2 nm.

Boima ba Micropipe (MPD): ≤ 1 ea/cm².

Resistivity:Khanyetso e phahameng, hangata e sebelisoang lits'ebetsong tsa semi-insulating.

Warp: ≤ 30 μm (bakeng sa boholo bo nyane), ≤ 45 μm bakeng sa bophara bo boholo.

TTV: ≤ 10 μm.

Ohter boholo bo fumanehang 3inch 4inch 6inch 8inch

4H-P,6H-P&3C Sephaphatha sa SiC(P-mofuta oa SiC Wafers)

Kopo:Haholo-holo bakeng sa lisebelisoa tsa matla le tse phahameng-frequency.

Sebaka sa Diameter:50.8 mm ho isa ho 200 mm.

Botenya:350 μm ± 25 μm kapa likhetho tse ikhethileng.

Resistivity:P-mofuta 4H/6H-P: ≤ 0.1 Ω·cm (Z-grade), ≤ 0.3 Ω·cm (P-grade).

Bokhopo:Ra ≤ 0.2 nm (CMP kapa MP).

Boima ba Micropipe (MPD):<1 ea/cm².

TTV: ≤ 10 μm.

Kenyelletso ea Edge:ho tloha ho 3 ho isa ho 6 mm.

Warp: ≤ 30 μm bakeng sa boholo bo nyane, ≤ 45 μm bakeng sa boholo bo boholo.

Ohter boholo bo fumanehang 3inch 4inch 6inch5×5 10×10

Lethathamo la Li-Parameters tsa Boitsebiso bo sa Feleng

Thepa

2 inch

3 intshi

4inch

6 intshi

8inch

Mofuta

4H-N/HPSI/
6H-N/4H/6H-P/3C;

4H-N/HPSI/
6H-N/4H/6H-P/3C;

4H-N/HPSI//4H/6H-P/3C;

4H-N/HPSI//4H/6H-P/3C;

4H-N/HPSI/4H-SEMI

Diameter

50.8 ± 0.3 limilimithara

76.2±0.3mm

100±0.3mm

150±0.3mm

200 ± 0.3 limilimithara

Botenya

330 ± 25 um

350 ±25 um

350 ±25 um

350 ±25 um

350 ±25 um

350±25um

500±25um

500±25um

500±25um

500±25um

kapa e etselitsoeng motho

kapa e etselitsoeng motho

kapa e etselitsoeng motho

kapa e etselitsoeng motho

kapa e etselitsoeng motho

Boqhobane

Ra ≤ 0.2nm

Ra ≤ 0.2nm

Ra ≤ 0.2nm

Ra ≤ 0.2nm

Ra ≤ 0.2nm

Warp

≤30um

≤30um

≤30um

≤30um

≤45um

TTV

≤ 10um

≤ 10um

≤ 10um

≤ 10um

≤ 10um

Qhepa/ Cheka

CMP/MP

MPD

<1ea/cm-2

<1ea/cm-2

<1ea/cm-2

<1ea/cm-2

<1ea/cm-2

Sebopeho

Round, Flat 16mm; OF bolelele 22mm; EA Bolelele ba 30/32.5mm; EA Bolelele ba 47.5mm; NOTCH; NOTCH;

Bevel

45 °, SEMI Spec; C Sebopeho

 Kereiti

Phaello ea tlhahiso ea MOS&SBD; Sehlopha sa lipatlisiso; Sehlopha sa Dummy, Kereiti ea sephaphatha sa peo

Litlhaloso

Diameter, Botenya, Boitloaelo, litlhaloso tse ka holimo li ka etsoa ka kopo ea hau

 

Lisebelisoa

·Matla a Elektronike

Li-wafer tsa mofuta oa N li bohlokoa lisebelisoa tsa elektroniki ka lebaka la bokhoni ba tsona ba ho sebetsana le motlakase o phahameng le hona joale. Li sebelisoa hangata ho li-converter tsa motlakase, li-inverters le li-drive tsa liindasteri tse kang matla a tsosolositsoeng, likoloi tsa motlakase le li-automation tsa indasteri.

· Optoelectronics
Lisebelisoa tsa SiC tsa mofuta oa N, haholo-holo bakeng sa lisebelisoa tsa optoelectronic, li sebelisoa lisebelisoa tse kang light-emitting diodes (LED) le laser diode. Ts'ebetso ea bona e phahameng ea mocheso le li-bandgap tse pharaletseng li etsa hore e be tse loketseng lisebelisoa tsa optoelectronic tse sebetsang hantle haholo.

·Lisebelisoa tsa Mocheso o Phahameng
Li-wafers tsa 4H-N 6H-N SiC li loketse hantle bakeng sa tikoloho ea mocheso o phahameng, joalo ka lisensara le lisebelisoa tsa motlakase tse sebelisoang sebakeng sa sefofane, likoloi, le lits'ebetsong tsa indasteri moo ho qhala mocheso le botsitso maemong a mocheso a phahameng.

·Lisebelisoa tsa RF
Li-wafers tsa 4H-N 6H-N SiC li sebelisoa lisebelisoa tsa maqhubu a seea-le-moea (RF) tse sebetsang maemong a phahameng a maqhubu. Li sebelisoa mekhoeng ea puisano, thekenoloji ea radar, le puisano ea sathelaete, moo matla a phahameng a matla le ts'ebetso e hlokahalang.

·Lisebelisoa tsa Photonic
Ho li-photonics, li-wafers tsa SiC li sebelisoa bakeng sa lisebelisoa tse kang li-photodetectors le li-modulator. Thepa e ikhethang ea thepa e e lumella hore e atlehe ho hlahisa leseli, ho feto-fetoha ha maemo, le ho lemoha lits'ebetsong tsa puisano tsa optical le lisebelisoa tsa litšoantšo.

·Li-sensor
Li-wafers tsa SiC li sebelisoa mefuteng e fapaneng ea li-sensor, haholo-holo libakeng tse thata moo lisebelisoa tse ling li ka hlolehang. Tsena li kenyelletsa mocheso, khatello le li-sensor tsa lik'hemik'hale, tse bohlokoa mafapheng a kang likoloi, oli le khase, le tlhahlobo ea tikoloho.

·Litsamaiso tsa ho khanna likoloi tsa motlakase
Theknoloji ea SiC e bapala karolo ea bohlokoa likoloing tsa motlakase ka ho ntlafatsa ts'ebetso le ts'ebetso ea litsamaiso tsa ho khanna. Ka li-semiconductors tsa motlakase tsa SiC, likoloi tsa motlakase li ka fumana bophelo bo betere ba betri, linako tsa ho tjhaja kapele, le ts'ebeliso e ntle ea matla.

·Li-Sensors tse tsoetseng pele le li-converter tsa Photonic
Litheknolojing tse tsoetseng pele tsa sensor, li-wafers tsa SiC li sebelisoa bakeng sa ho theha li-sensor tse nepahetseng haholo bakeng sa lits'ebetso ho liroboto, lisebelisoa tsa bongaka le tlhahlobo ea tikoloho. Ho li-converter tsa photonic, thepa ea SiC e sebelisoa hampe ho thusa phetoho e nepahetseng ea matla a motlakase ho mats'oao a optical, e leng ntho ea bohlokoa mekhoeng ea puisano ea mehala le marang-rang a marang-rang a potlakileng.

Q&A

Q: 4H ke eng ho 4H SiC?
A: "4H" ho 4H SiC e bua ka sebopeho sa kristale sa silicon carbide, haholo-holo sebopeho sa hexagonal se nang le likarolo tse 'nè (H). "H" e bontša mofuta oa hexagonal polytype, e khethollang ho tse ling tsa SiC polytypes tse kang 6H kapa 3C.

Q: Thermal conductivity ea 4H-SiC ke eng?
A:Thermal conductivity ea 4H-SiC (Silicon Carbide) e ka ba 490-500 W / m·K mocheso oa kamore. Ts'ebetso ena e phahameng ea mocheso e etsa hore e be e loketseng bakeng sa lits'ebetso tsa elektronike tse matla le libakeng tse nang le mocheso o phahameng, moo mocheso o sebetsang hantle o leng bohlokoa.

  • E fetileng:
  • E 'ngoe:
    • Ngola molaetsa wa hao mona mme o re romele wona

    Lihlopha tsa lihlahisoa

    Tobetsa Enter ho batla kapa ESC ho koala