4H-N HPSI SiC wafer 6H-N 6H-P 3C-N SiC Epitaxial wafer bakeng sa MOS kapa SBD
Karolo e Khutšoanyane ea SiC Substrate SiC Epi-wafer
Re fana ka pokello e felletseng ea li-substrate tsa SiC tsa boleng bo holimo le li-wafer tsa sic ka mefuta e mengata ea polytype le li-doping profiles—ho kenyeletsoa 4H-N (n-type conductive), 4H-P (p-type conductive), 4H-HPSI (high-purity semi-insulating), le 6H-P (p-type conductive)—ka bophara ho tloha ho 4″, 6″, le 8″ ho fihlela ho 12″. Ka ntle ho li-substrate tse se nang letho, lits'ebeletso tsa rona tsa kholo ea epi wafer tse ekelitsoeng boleng li fana ka li-wafer tsa epitaxial (epi) tse nang le botenya bo laoloang ka thata (1–20 µm), maemo a doping, le botenya ba liphoso.
Wafer e 'ngoe le e 'ngoe ea sic le epi wafer li hlahlojoa ka thata ka har'a mohala (botenya ba micropipe <0.1 cm⁻², ho rarahana ha bokaholimo Ra <0.2 nm) le tlhaloso e felletseng ea motlakase (CV, 'mapa oa resistivity) ho netefatsa ho tšoana ho ikhethang ha kristale le ts'ebetso. Ebang e sebelisoa bakeng sa li-module tsa motlakase tsa motlakase, li-amplifiers tsa RF tse nang le maqhubu a phahameng, kapa lisebelisoa tsa optoelectronic (LED, li-photodetector), mela ea rona ea lihlahisoa tsa SiC substrate le epi wafer e fana ka ts'epo, botsitso ba mocheso le matla a ho senyeha a hlokoang ke lits'ebetso tse thata ka ho fetisisa tsa kajeno.
Thepa le ts'ebeliso ea mofuta oa SiC Substrate 4H-N
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Sebopeho sa 4H-N SiC substrate Polytype (Hexagonal)
Sekheo se seholo sa ~3.26 eV se netefatsa ts'ebetso e tsitsitseng ea motlakase le ho tiea ha mocheso tlas'a maemo a mocheso o phahameng le a matla a motlakase.
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Substrate ea SiCHo sebelisa Doping ea Mofuta oa N
Ho laolwa hantle ha naetrojene ho hlahisa maemo a carrier ho tloha ho 1×10¹⁶ ho isa ho 1×10¹⁹ cm⁻³ le ho tsamaya ha dielektrone mochesong wa kamore ho fihlela ho ~900 cm²/V·s, e leng se fokotsang tahlehelo ya ho tsamaisa motlakase.
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Substrate ea SiCHo hanyetsa ka bophara le ho tšoana
Mefuta e fumanehang ea resistivity ea 0.01–10 Ω·cm le botenya ba wafer ba 350–650 µm ka mamello ea ±5% ho doping le botenya—e loketse bakeng sa tlhahiso ea lisebelisoa tse matla haholo.
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Substrate ea SiCBotebo bo Phahameng ba Sekoli
Botenya ba micropipe < 0.1 cm⁻² le botenya ba dislocation ba basal-plane < 500 cm⁻², e fanang ka tlhahiso ya sesebediswa ya > 99% le botshepehi bo phahameng ba kristale.
- Substrate ea SiCHo khanna ho ikhethang ha mocheso
Ho tsamaisa mocheso ho fihlela ho ~370 W/m·K ho thusa ho tlosa mocheso ka katleho, ho eketsa ts'epo ea sesebelisoa le bongata ba matla.
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Substrate ea SiCLikopo tse reriloeng
Li-MOSFET tsa SiC, li-diode tsa Schottky, li-module tsa motlakase le lisebelisoa tsa RF bakeng sa li-drive tsa likoloi tsa motlakase, li-inverter tsa letsatsi, li-drive tsa indasteri, litsamaiso tsa ho hula, le limmaraka tse ling tsa motlakase le lisebelisoa tsa elektroniki tse hlokang matla.
Tlhaloso ea wafer ea SiC ea mofuta oa 6inch 4H-N | ||
| Thepa | Kereiti ea Tlhahiso ea Lefela la MPD (Kereiti ea Z) | Kereiti ea Dummy (Kereiti ea D) |
| Sehlopha | Kereiti ea Tlhahiso ea Lefela la MPD (Kereiti ea Z) | Kereiti ea Dummy (Kereiti ea D) |
| Bophara | 149.5 mm - 150.0 mm | 149.5 mm - 150.0 mm |
| Mofuta oa poly | 4H | 4H |
| Botenya | 350 µm ± 15 µm | 350 µm ± 25 µm |
| Boikutlo ba Wafer | Mothapo o sa sebetseng: 4.0° ho ea ho <1120> ± 0.5° | Mothapo o sa sebetseng: 4.0° ho ea ho <1120> ± 0.5° |
| Botebo ba Micropipe | ≤ 0.2 cm² | ≤ 15 cm² |
| Ho hanyetsa | 0.015 - 0.024 Ω·cm | 0.015 - 0.028 Ω·cm |
| Boikutlo ba Motheo bo bataletseng | [10-10] ± 50° | [10-10] ± 50° |
| Bolelele ba Sephara ba Motheo | 475 mm ± 2.0 mm | 475 mm ± 2.0 mm |
| Ho se kenyeletsoe ha Moeli | 3 mm | 3 mm |
| LTV/TIV / Seqha / Koba | ≤ 2.5 µm / ≤ 6 µm / ≤ 25 µm / ≤ 35 µm | ≤ 5 µm / ≤ 15 µm / ≤ 40 µm / ≤ 60 µm |
| Ho ba le makukuno | Ra ea Poland ≤ 1 nm | Ra ea Poland ≤ 1 nm |
| CMP Ra | ≤ 0.2 nm | ≤ 0.5 nm |
| Mapetso a Moeli ka Leseli le Matla a Phahameng | Bolelele bo bokellaneng ≤ 20 mm bolelele bo le bong ≤ 2 mm | Bolelele bo bokellaneng ≤ 20 mm bolelele bo le bong ≤ 2 mm |
| Lipoleiti tsa Hex ka Leseli le Phahameng la Matla | Sebaka se bokellaneng ≤ 0.05% | Sebaka se bokellaneng ≤ 0.1% |
| Libaka tsa Polytype ka Leseli le Matla a Phahameng | Sebaka se bokellaneng ≤ 0.05% | Sebaka se bokellaneng ≤ 3% |
| Ho kenyeletsoa ha Khabone e Bonahalang | Sebaka se bokellaneng ≤ 0.05% | Sebaka se bokellaneng ≤ 5% |
| Ho ngoatheloa ha bokaholimo ba Silicon ke Leseli le Matla a Phahameng | Bolelele bo bokellaneng ≤ bophara ba wafer e le 1 | |
| Li-chips tsa Edge ka Leseli le Phahameng la Matla | Ha ho letho le dumelletsweng bophara le botebo ba ≥ 0.2 mm | 7 e lumelletsoe, ≤ 1 mm ka 'ngoe |
| Ho Sefahla Sekere sa Khoele | < 500 cm³ | < 500 cm³ |
| Tšilafalo ea Bokaholimo ba Silicon ke Leseli le Matla a Phahameng | ||
| Sephutheloana | Cassette ea wafer e nang le li-multi-wafer kapa setshelo se le seng sa wafer | Cassette ea wafer e nang le li-multi-wafer kapa setshelo se le seng sa wafer |
Tlhaloso ea wafer ea SiC ea mofuta oa 8inch 4H-N | ||
| Thepa | Kereiti ea Tlhahiso ea Lefela la MPD (Kereiti ea Z) | Kereiti ea Dummy (Kereiti ea D) |
| Sehlopha | Kereiti ea Tlhahiso ea Lefela la MPD (Kereiti ea Z) | Kereiti ea Dummy (Kereiti ea D) |
| Bophara | 199.5 mm - 200.0 mm | 199.5 mm - 200.0 mm |
| Mofuta oa poly | 4H | 4H |
| Botenya | 500 µm ± 25 µm | 500 µm ± 25 µm |
| Boikutlo ba Wafer | 4.0° ho ea ho <110> ± 0.5° | 4.0° ho ea ho <110> ± 0.5° |
| Botebo ba Micropipe | ≤ 0.2 cm² | ≤ 5 cm² |
| Ho hanyetsa | 0.015 - 0.025 Ω·cm | 0.015 - 0.028 Ω·cm |
| Boikutlo bo Hlomphehang | ||
| Ho se kenyeletsoe ha Moeli | 3 mm | 3 mm |
| LTV/TIV / Seqha / Koba | ≤ 5 µm / ≤ 15 µm / ≤ 35 µm / 70 µm | ≤ 5 µm / ≤ 15 µm / ≤ 35 µm / 100 µm |
| Ho ba le makukuno | Ra ea Poland ≤ 1 nm | Ra ea Poland ≤ 1 nm |
| CMP Ra | ≤ 0.2 nm | ≤ 0.5 nm |
| Mapetso a Moeli ka Leseli le Matla a Phahameng | Bolelele bo bokellaneng ≤ 20 mm bolelele bo le bong ≤ 2 mm | Bolelele bo bokellaneng ≤ 20 mm bolelele bo le bong ≤ 2 mm |
| Lipoleiti tsa Hex ka Leseli le Phahameng la Matla | Sebaka se bokellaneng ≤ 0.05% | Sebaka se bokellaneng ≤ 0.1% |
| Libaka tsa Polytype ka Leseli le Matla a Phahameng | Sebaka se bokellaneng ≤ 0.05% | Sebaka se bokellaneng ≤ 3% |
| Ho kenyeletsoa ha Khabone e Bonahalang | Sebaka se bokellaneng ≤ 0.05% | Sebaka se bokellaneng ≤ 5% |
| Ho ngoatheloa ha bokaholimo ba Silicon ke Leseli le Matla a Phahameng | Bolelele bo bokellaneng ≤ bophara ba wafer e le 1 | |
| Li-chips tsa Edge ka Leseli le Phahameng la Matla | Ha ho letho le dumelletsweng bophara le botebo ba ≥ 0.2 mm | 7 e lumelletsoe, ≤ 1 mm ka 'ngoe |
| Ho Sefahla Sekere sa Khoele | < 500 cm³ | < 500 cm³ |
| Tšilafalo ea Bokaholimo ba Silicon ke Leseli le Matla a Phahameng | ||
| Sephutheloana | Cassette ea wafer e nang le li-multi-wafer kapa setshelo se le seng sa wafer | Cassette ea wafer e nang le li-multi-wafer kapa setshelo se le seng sa wafer |
4H-SiC ke thepa e sebetsang hantle e sebediswang bakeng sa di-elektroniki tsa motlakase, disebediswa tsa RF, le ditshebediso tsa mocheso o phahameng. "4H" e bolela sebopeho sa kristale, se nang le mahlakore a tsheletseng, mme "N" e bontsha mofuta wa doping o sebediswang ho ntlafatsa tshebetso ya thepa.
The4H-SiCMofuta ona o sebelisoa hangata bakeng sa:
Lisebelisoa tsa Elektroniki tsa Matla:E sebelisoa lisebelisoa tse kang di-diode, li-MOSFET, le li-IGBT bakeng sa literene tsa motlakase tsa likoloi tsa motlakase, mechini ea indasteri, le litsamaiso tsa matla a nchafatsoang.
Theknoloji ea 5G:Ka tlhoko ea 5G ea likarolo tse sebetsang khafetsa le tse sebetsang hantle haholo, bokhoni ba SiC ba ho sebetsana le motlakase o phahameng le ho sebetsa mochesong o phahameng bo etsa hore e be ntle bakeng sa li-amplifiers tsa motlakase tsa seteishene sa motheo le lisebelisoa tsa RF.
Mekhoa ea Matla a Letsatsi:Litšobotsi tse ntle tsa SiC tsa ho sebetsana le motlakase li loketse li-inverter le li-converter tsa photovoltaic (matla a letsatsi).
Likoloi tsa Motlakase (li-EV):SiC e sebelisoa haholo litereneng tsa motlakase tsa motlakase bakeng sa phetoho e sebetsang hantle ea matla, tlhahiso e tlase ea mocheso, le matla a mangata a matla.
Thepa le ts'ebeliso ea mofuta oa SiC Substrate 4H Semi-Insulation
Thepa:
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Mekhoa ea taolo ea ho se be le lipeipi tse nyenyane: E netefatsa hore ha ho na liphaephe tse nyane, e ntlafatsa boleng ba substrate.
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Mekhoa ea taolo ea monocrystalline: E netefatsa sebopeho se le seng sa kristale bakeng sa thepa e ntlafalitsoeng ea thepa.
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Mekhoa ea taolo ea ho kenyelletsa: E fokotsa boteng ba litšila kapa lintho tse kenyellelitsoeng, e leng se etsang hore ho be le substrate e hloekileng.
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Mekhoa ea taolo ea ho hanyetsa: E lumella taolo e nepahetseng ea ho hanyetsa motlakase, e leng ea bohlokoa bakeng sa ts'ebetso ea sesebelisoa.
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Mekhoa ea taolo le taolo ea litšila: E laola le ho fokotsa ho kenngoa ha litšila ho boloka botsitso ba substrate.
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Mekhoa ea taolo ea bophara ba mehato ea substrate: E fana ka taolo e nepahetseng holim'a bophara ba mehato, e netefatsa botsitso ho pholletsa le substrate
Tlhaloso ea substrate ea 6Inch 4H-semi SiC | ||
| Thepa | Kereiti ea Tlhahiso ea Lefela la MPD (Kereiti ea Z) | Kereiti ea Dummy (Kereiti ea D) |
| Bophara (mm) | 145 mm - 150 mm | 145 mm - 150 mm |
| Mofuta oa poly | 4H | 4H |
| Botenya (um) | 500 ± 15 | 500 ± 25 |
| Boikutlo ba Wafer | Mothating: ± 0.0001° | Mothating: ± 0.05° |
| Botebo ba Micropipe | ≤ 15 cm-2 | ≤ 15 cm-2 |
| Ho hanyetsa (Ωcm) | ≥ 10E3 | ≥ 10E3 |
| Boikutlo ba Motheo bo bataletseng | (0-10)° ± 5.0° | (10-10)° ± 5.0° |
| Bolelele ba Sephara ba Motheo | Notch | Notch |
| Ho se kenyeletsoe ha Moeli (mm) | ≤ 2.5 µm / ≤ 15 µm | ≤ 5.5 µm / ≤ 35 µm |
| LTV / Sekotlolo / Sekotlolo | ≤ 3 µm | ≤ 3 µm |
| Ho ba le makukuno | Ra ea Poland ≤ 1.5 µm | Ra ea Poland ≤ 1.5 µm |
| Li-chips tsa Edge ka Leseli le Phahameng la Matla | ≤ 20 µm | ≤ 60 µm |
| Lipoleiti tsa Mocheso ka Leseli le Phahameng la Matla | Kakaretso ≤ 0.05% | Kakaretso ≤ 3% |
| Libaka tsa Polytype ka Leseli le Matla a Phahameng | Ho kenyeletsoa ha Khabone e Bonahalang ≤ 0.05% | Kakaretso ≤ 3% |
| Ho ngoatheloa ha bokaholimo ba Silicon ke Leseli le Matla a Phahameng | ≤ 0.05% | Kakaretso ≤ 4% |
| Li-chips tsa Edge ka Leseli le Phahameng la Matla (Boholo) | Ha ea Lumelloa > 02 mm Bophara le Botebo | Ha ea Lumelloa > 02 mm Bophara le Botebo |
| Ho Atoloha ha Sekerefo sa Thuso | ≤ 500 µm | ≤ 500 µm |
| Tšilafalo ea Bokaholimo ba Silicon ke Leseli le Matla a Phahameng | ≤ 1 x 10^5 | ≤ 1 x 10^5 |
| Sephutheloana | Cassette ea wafer e nang le li-wafer tse ngata kapa setshelo se le seng sa wafer | Cassette ea wafer e nang le li-wafer tse ngata kapa setshelo se le seng sa wafer |
Tlhaloso ea Substrate ea SiC ea 4-Inch 4H-Semi Insulating
| Paramethara | Kereiti ea Tlhahiso ea Lefela la MPD (Kereiti ea Z) | Kereiti ea Dummy (Kereiti ea D) |
|---|---|---|
| Matlotlo a 'Mele | ||
| Bophara | 99.5 mm – 100.0 mm | 99.5 mm – 100.0 mm |
| Mofuta oa poly | 4H | 4H |
| Botenya | 500 μm ± 15 μm | 500 μm ± 25 μm |
| Boikutlo ba Wafer | Mothating: <600h > 0.5° | Mothating: <000h > 0.5° |
| Matlo a Motlakase | ||
| Boima ba Micropipe (MPD) | ≤1 cm⁻² | ≤15 cm⁻² |
| Ho hanyetsa | ≥150 Ω·cm | ≥1.5 Ω·cm |
| Mamello ea Jiometri | ||
| Boikutlo ba Motheo bo bataletseng | (0x10) ± 5.0° | (0x10) ± 5.0° |
| Bolelele ba Sephara ba Motheo | 52.5 mm ± 2.0 mm | 52.5 mm ± 2.0 mm |
| Bolelele ba Bobedi bo Sephara | 18.0 mm ± 2.0 mm | 18.0 mm ± 2.0 mm |
| Boikutlo bo Bobedi bo bataletseng | 90° CW ho tloha Prime flat ± 5.0° (Si e shebile holimo) | 90° CW ho tloha Prime flat ± 5.0° (Si e shebile holimo) |
| Ho se kenyeletsoe ha Moeli | 3 mm | 3 mm |
| LTV / TTV / Seqha / Koba | ≤2.5 μm / ≤5 μm / ≤15 μm / ≤30 μm | ≤10 μm / ≤15 μm / ≤25 μm / ≤40 μm |
| Boleng ba Bokaholimo | ||
| Bokgopo ba Bokaholimo (Polish Ra) | ≤1 nm | ≤1 nm |
| Bokgopo ba Bokaholimo (CMP Ra) | ≤0.2 nm | ≤0.2 nm |
| Mapetso a Moeli (Leseli le Matla a Phahameng) | Ha ea lumelloa | Bolelele bo bokellaneng ≥10 mm, lepetso le le leng ≤2 mm |
| Liphoso tsa Poleiti ea Hexagonal | Sebaka se kopaneng sa ≤0.05% | Sebaka se kopaneng sa ≤0.1% |
| Libaka tsa ho Kenyelletsoa ha Mefuta e Mengata | Ha ea lumelloa | Sebaka se kopaneng sa ≤1% |
| Ho kenyeletsoa ha Khabone e Bonahalang | Sebaka se kopaneng sa ≤0.05% | Sebaka se kopaneng sa ≤1% |
| Mekhabiso ea Silicon Surface | Ha ea lumelloa | Bolelele ba kakaretso ba bophara ba wafer bo ≤1 |
| Li-chips tsa Edge | Ha ho letho le dumelletsweng (bophara/botebo ba ≥0.2 mm) | ≤5 ditshipi (ka 'ngoe ≤1 mm) |
| Tšilafalo ea Bokaholimo ba Silicon | Ha ea hlalosoa | Ha ea hlalosoa |
| Sephutheloana | ||
| Sephutheloana | Khasete ea wafer e nang le wafer e ngata kapa setshelo sa wafer e le 'ngoe | Khasete ea li-wafer tse ngata kapa |
Kopo:
TheLisebelisoa tse sireletsang mocheso tsa SiC 4Hli sebelisoa haholo-holo lisebelisoa tsa elektroniki tse matla haholo le tse sebelisang maqhubu a mangata, haholo-holoTšimo ea RFLi-substrate tsena li bohlokoa bakeng sa lits'ebetso tse fapaneng ho kenyeletsoalitsamaiso tsa puisano tsa microwave, radar e nang le mekhahleloleli-detector tsa motlakase tse se nang mohala. Ho tsamaisa ha tsona mocheso o phahameng le litšobotsi tse ntle tsa motlakase li etsa hore li be ntle bakeng sa lits'ebetso tse boima lits'ebetsong tsa motlakase le litsamaiso tsa puisano.
Thepa le ts'ebeliso ea mofuta oa SiC epi wafer 4H-N
Matlotlo le Litšebeliso tsa Wafer ea Epi ea Mofuta oa SiC 4H-N le Epi
Matlotlo a SiC 4H-N Type Epi Wafer:
Sebopeho sa Thepa:
SiC (Silicon Carbide): E tsebahala ka ho thatafala ha eona ho ikhethang, ho tsamaisa mocheso o phahameng, le thepa e ntle ea motlakase, SiC e loketse lisebelisoa tsa elektroniki tse sebetsang hantle.
Mofuta oa Polytype oa 4H-SiC: Polytype ea 4H-SiC e tsebahala ka bokhoni ba eona bo phahameng le botsitso lits'ebetsong tsa elektroniki.
Doping ea mofuta oa N: Ho sebelisa doping ea mofuta oa N (e nang le naetrojene) ho fana ka motsamao o motle oa lielektrone, e leng se etsang hore SiC e lokele lits'ebetso tsa maqhubu a phahameng le matla a phahameng.
Ho khanna ha mocheso o phahameng:
Li-wafer tsa SiC li na le conductivity e phahameng ea mocheso, hangata ho tloha ho120–200 W/m·K, e ba lumellang ho laola mocheso ka katleho disebedisweng tse nang le matla a maholo jwalo ka di-transistors le di-diode.
Lekhalo le Sephara la Band:
Ka lekhalo la3.26 eV, 4H-SiC e ka sebetsa ka di-voltage tse phahameng, maqhubu le dithempereichara ha e bapiswa le disebediswa tsa setso tse thehilweng ho silicon, e leng se etsang hore e be ntle bakeng sa ditshebediso tse sebetsang hantle le tse nang le tshebetso e phahameng.
Matlotlo a Motlakase:
Ho tsamaea ha SiC ka dielektrone tse ngata le ho tsamaisa motlakase ho etsa hore e be ntle bakeng samotlakase oa elektronike, e fanang ka lebelo le potlakileng la ho chencha le bokgoni bo phahameng ba ho sebetsana le motlakase le motlakase, e leng se fellang ka ditsamaiso tsa taolo ya motlakase tse sebetsang hantle haholoanyane.
Khanyetso ea Mekaniki le Lik'hemik'hale:
SiC ke e 'ngoe ea thepa e thata ka ho fetisisa, e latela taemane feela, 'me e hanela haholo oxidation le mafome, e leng se etsang hore e tšoarelle maemong a thata.
Litšebeliso tsa SiC 4H-N Type Epi Wafer:
Lisebelisoa tsa Elektroniki tsa Matla:
Li-wafer tsa epi tsa mofuta oa SiC 4H-N li sebelisoa haholo holi-MOSFET tsa matla, Li-IGBTlediodebakeng saphetoho ea matlalitsamaisong tse kangli-inverter tsa letsatsi, likoloi tsa motlakaselelitsamaiso tsa polokelo ea matla, e fanang ka ts'ebetso e ntlafalitsoeng le ts'ebeliso e ntle ea matla.
Likoloi tsa Motlakase (li-EV):
In literene tsa motlakase tsa likoloi tsa motlakase, balaoli ba enjeneleliteishene tsa ho tjhaja, Li-wafer tsa SiC li thusa ho fihlella ts'ebetso e betere ea betri, ho tjhaja kapele, le ts'ebetso e ntlafetseng ea matla ka kakaretso ka lebaka la bokhoni ba tsona ba ho sebetsana le matla le mocheso o phahameng.
Mekhoa ea Matla a Nchafatsoang:
Li-Inverter tsa Letsatsi: Li-wafer tsa SiC li sebelisoa holitsamaiso tsa matla a letsatsibakeng sa ho fetola matla a DC ho tloha ho diphanele tsa letsatsi ho ya ho AC, ho eketsa bokgoni ba tsamaiso le tshebetso ka kakaretso.
Li-turbine tsa MoeaTheknoloji ea SiC e sebelisoa holitsamaiso tsa taolo ea turbine ea moea, ho ntlafatsa tlhahiso ea motlakase le katleho ea phetoho.
Lifofane le Tšireletso:
Li-wafer tsa SiC li loketse ho sebelisoalisebelisoa tsa elektroniki tsa lifofanelelits'ebetso tsa sesole, ho kenyeletsoalitsamaiso tsa radarlelisebelisoa tsa elektroniki tsa sathelaete, moo khanyetso e phahameng ea mahlaseli le botsitso ba mocheso li leng bohlokoa.
Dikopo tsa Mocheso o Phahameng le Maqhubu a Phahameng:
Li-wafer tsa SiC li ipabola hahololisebelisoa tsa elektroniki tse mocheso o phahameng, e sebediswang holienjine tsa lifofane, sefofa-sebakenglelitsamaiso tsa ho futhumatsa tsa indasteri, kaha li boloka ts'ebetso maemong a mocheso o feteletseng. Ho feta moo, lekhalo la tsona le leholo le lumella ts'ebeliso holits'ebetso tse sebelisoang khafetsa haholojoalo kaLisebelisoa tsa RFlepuisano ea microwave.
| Tlhaloso ea axial ea epit ea mofuta oa N ea lisenthimithara tse 6 | |||
| Paramethara | yuniti | Z-MOS | |
| Mofuta | Motlakase / Dopant | - | Mofuta oa N / Naetrojene |
| Lera la Buffer | Botenya ba Lera la Buffer | um | 1 |
| Mamello ea Botenya ba Lera la Buffer | % | ± 20% | |
| Ho tsepamisa maikutlo ha lera la buffer | cm-3 | 1.00E+18 | |
| Mamello ea ho Tšoenyeha ha Lera la Buffer | % | ± 20% | |
| Lera la 1 la Epi | Botenya ba Lera la Epi | um | 11.5 |
| Botenya ba Lera la Epi Ho tšoana | % | ± 4% | |
| Mamello ea Botenya ba Epi Layers ((Spec- Boholo ，Bonyane)/Tlhahlobo) | % | ± 5% | |
| Ho tsepamisa maikutlo ha Epi Layer | cm-3 | 1E 15~ 1E 18 | |
| Mamello ea Mahloriso a Epi Layer | % | 6% | |
| Ho tšoana ha mahloriso a Epi Layer (σ /e mahareng) | % | ≤5% | |
| Ho Tšoana ha Mahloriso a Epi Layer <(boholo-motsotso)/(boholo+motsotso> | % | ≤ 10% | |
| Sebopeho sa Wafer sa Epitaixal | Seqha | um | ≤±20 |
| WARP | um | ≤30 | |
| TTV | um | ≤ 10 | |
| LTV | um | ≤2 | |
| Litšobotsi tse Akaretsang | Bolelele ba ho ngoapa | mm | ≤30mm |
| Li-chips tsa Edge | - | HA HO LE E 'NGOE | |
| Tlhaloso ea liphoso | ≥97% (E lekantsoe ka 2*2, Liphoso tsa babolai li kenyelletsa: Liphoso li kenyelletsa Liphaephe tse nyenyane/Likoti tse kholo, Carrot, Likhutlotharo | ||
| Tšilafalo ea tšepe | liathomo/cm² | d f f ll i ≤5E10 liathomo/cm2 (Al, Cr, Fe, Ni, Cu, Zn, Hg,Na,K,Ti,Ca &Mn) | |
| Sephutheloana | Litlhaloso tsa ho paka | likhomphutha/lebokose | khasete ea wafer e nang le wafer e ngata kapa setshelo se le seng sa wafer |
| Tlhaloso ea epitaxial ea mofuta oa N ea lisenthimithara tse 8 | |||
| Paramethara | yuniti | Z-MOS | |
| Mofuta | Motlakase / Dopant | - | Mofuta oa N / Naetrojene |
| Lera la buffer | Botenya ba Lera la Buffer | um | 1 |
| Mamello ea Botenya ba Lera la Buffer | % | ± 20% | |
| Ho tsepamisa maikutlo ha lera la buffer | cm-3 | 1.00E+18 | |
| Mamello ea ho Tšoenyeha ha Lera la Buffer | % | ± 20% | |
| Lera la 1 la Epi | Karolelano ea Botenya ba Li-Epi Layers | um | 8 ~ 12 |
| Botenya ba Epi Layers Ho tšoana (σ/karolelano) | % | ≤2.0 | |
| Mamello ea Botenya ba Epi Layers ((Spec -Max, Min)/Spec) | % | ±6 | |
| Karolelano ea Doping ea Nete ea Epi Layers | cm-3 | 8E+15 ~2E+16 | |
| Ho tšoana ha Net Doping ea Epi Layers (σ/karolelano) | % | ≤5 | |
| Mamello ea ho sebelisa lithethefatsi tsa Epi Layers ((Spec -Max，) | % | ± 10.0 | |
| Sebopeho sa Wafer sa Epitaixal | Mi )/S ) Koahela | um | ≤50.0 |
| Seqha | um | ± 30.0 | |
| TTV | um | ≤ 10.0 | |
| LTV | um | ≤4.0 (10mm × 10mm) | |
| Kakaretso Litšobotsi | Mengoapo | - | Bolelele bo bokellaneng≤ 1/2 bophara ba Wafer |
| Li-chips tsa Edge | - | ≤2 ditshipi, radius ka 'ngoe ≤1.5mm | |
| Tšilafalo ea Tšepe tse ka Holimo | liathomo/cm2 | ≤5E10 liathomo/cm2 (Al, Cr, Fe, Ni, Cu, Zn, Hg,Na,K,Ti,Ca &Mn) | |
| Tlhahlobo e Phethahetseng ea Sekoli | % | ≥ 96.0 (Liphoso tsa 2X2 li kenyelletsa Micropipe / Likoti tse Kholo, Carrot, Liphoso tse khutlotharo, Litšitiso, Linear/IGSF-s, BPD) | |
| Tšilafalo ea Tšepe tse ka Holimo | liathomo/cm2 | ≤5E10 liathomo/cm2 (Al, Cr, Fe, Ni, Cu, Zn, Hg,Na,K,Ti,Ca &Mn) | |
| Sephutheloana | Litlhaloso tsa ho paka | - | khasete ea wafer e nang le wafer e ngata kapa setshelo se le seng sa wafer |
Lipotso le Likarabo tsa SiC wafer
P1: Melemo ea bohlokoa ea ho sebelisa li-wafer tsa SiC ho feta li-wafer tsa silicon tsa setso ka har'a lisebelisoa tsa motlakase ke efe?
A1:
Li-wafer tsa SiC li fana ka melemo e 'maloa ea bohlokoa ho feta li-wafer tsa silicon (Si) tsa setso ka lisebelisoa tsa elektroniki tse sebetsang ka motlakase, ho kenyeletsoa:
Bokgoni bo Phahameng: SiC e na le lekhalo le pharaletseng la bandgap (3.26 eV) ha e bapisoa le silicon (1.1 eV), e lumellang lisebelisoa ho sebetsa ka li-voltage tse phahameng, maqhubu le mocheso. Sena se lebisa tahlehelong e tlase ea matla le katleho e phahameng litsamaisong tsa phetoho ea matla.
Ho khanna ho Phahameng ha Thermal: Ho tsamaisa mocheso ha SiC ho phahame haholo ho feta ha silicon, e leng se nolofalletsang ho qhala ha mocheso hamolemo lits'ebetsong tsa matla a maholo, e leng se ntlafatsang ts'epo le bophelo ba lisebelisoa tsa motlakase.
Ho Sebetsana le Voltage e Phahameng le Hona Joale: Lisebelisoa tsa SiC li ka sebetsana le maemo a phahameng a motlakase le a hona joale, e leng se etsang hore li lokele lits'ebetso tse nang le matla a maholo joalo ka likoloi tsa motlakase, litsamaiso tsa matla a nchafatsoang, le li-drive tsa liindasteri.
Lebelo la ho Fetola ka Potlako: Disebediswa tsa SiC di na le bokgoni ba ho fetola ka potlako, e leng se thusang ho fokotsa tahlehelo ya matla le boholo ba sistimi, e leng se etsang hore di be ntle bakeng sa ditshebediso tse sebetsang maqhubu a phahameng.
P2: Ke ditshebediso dife tse ka sehloohong tsa di-wafer tsa SiC indastering ya dikoloi?
A2:
Indastering ea likoloi, li-wafer tsa SiC li sebelisoa haholo-holo ho:
Literene tsa motlakase tsa likoloi tsa motlakase (EV)Likarolo tse thehiloeng ho SiC joalo kali-inverterleli-MOSFET tsa matlantlafatsa bokgoni le tshebetso ya di-powertrain tsa dikoloi tsa motlakase ka ho nolofalletsa lebelo le potlakileng la ho chencha le boima bo phahameng ba matla. Sena se lebisa bophelong bo bolelele ba betri le tshebetso e ntlafetseng ka kakaretso ya koloi.
Litjhaja tse ka Boema-fofaneng: Disebediswa tsa SiC di thusa ho ntlafatsa bokgoni ba ditsamaiso tsa ho tjhaja ka hara sekepe ka ho nolofalletsa dinako tse potlakileng tsa ho tjhaja le taolo e betere ya mocheso, e leng ntho ya bohlokwa bakeng sa di-EV ho tshehetsa diteishene tsa ho tjhaja tse nang le matla a maholo.
Mekhoa ea Taolo ea Libetri (BMS)Theknoloji ea SiC e ntlafatsa bokhoni balitsamaiso tsa taolo ea betri, e lumellang taolo e betere ea motlakase, ts'ebetso e phahameng ea matla, le bophelo bo bolelele ba betri.
Li-converter tsa DC-DC: Li-wafer tsa SiC li sebelisoa hoLi-converter tsa DC-DCho fetolela matla a DC a nang le motlakase o phahameng ho ba matla a DC a nang le motlakase o tlase ka katleho e kholoanyane, e leng ntho ea bohlokoa likoloing tsa motlakase ho laola matla ho tloha betring ho ea likarolong tse fapaneng ka koloing.
Tshebetso e phahameng ya SiC ditshebedisong tsa motlakase o phahameng, mocheso o phahameng, le bokgoni bo phahameng e etsa hore e be bohlokwa bakeng sa phetoho ya indasteri ya dikoloi ho ya ho motsamao wa motlakase.
Tlhaloso ea wafer ea SiC ea mofuta oa 6inch 4H-N | ||
| Thepa | Kereiti ea Tlhahiso ea Lefela la MPD (Kereiti ea Z) | Kereiti ea Dummy (Kereiti ea D) |
| Sehlopha | Kereiti ea Tlhahiso ea Lefela la MPD (Kereiti ea Z) | Kereiti ea Dummy (Kereiti ea D) |
| Bophara | 149.5 mm – 150.0 mm | 149.5 mm – 150.0 mm |
| Mofuta oa poly | 4H | 4H |
| Botenya | 350 µm ± 15 µm | 350 µm ± 25 µm |
| Boikutlo ba Wafer | Mothapo o sa sebetseng: 4.0° ho ea ho <1120> ± 0.5° | Mothapo o sa sebetseng: 4.0° ho ea ho <1120> ± 0.5° |
| Botebo ba Micropipe | ≤ 0.2 cm² | ≤ 15 cm² |
| Ho hanyetsa | 0.015 – 0.024 Ω·cm | 0.015 – 0.028 Ω·cm |
| Boikutlo ba Motheo bo bataletseng | [10-10] ± 50° | [10-10] ± 50° |
| Bolelele ba Sephara ba Motheo | 475 mm ± 2.0 mm | 475 mm ± 2.0 mm |
| Ho se kenyeletsoe ha Moeli | 3 mm | 3 mm |
| LTV/TIV / Seqha / Koba | ≤ 2.5 µm / ≤ 6 µm / ≤ 25 µm / ≤ 35 µm | ≤ 5 µm / ≤ 15 µm / ≤ 40 µm / ≤ 60 µm |
| Ho ba le makukuno | Ra ea Poland ≤ 1 nm | Ra ea Poland ≤ 1 nm |
| CMP Ra | ≤ 0.2 nm | ≤ 0.5 nm |
| Mapetso a Moeli ka Leseli le Matla a Phahameng | Bolelele bo bokellaneng ≤ 20 mm bolelele bo le bong ≤ 2 mm | Bolelele bo bokellaneng ≤ 20 mm bolelele bo le bong ≤ 2 mm |
| Lipoleiti tsa Hex ka Leseli le Phahameng la Matla | Sebaka se bokellaneng ≤ 0.05% | Sebaka se bokellaneng ≤ 0.1% |
| Libaka tsa Polytype ka Leseli le Matla a Phahameng | Sebaka se bokellaneng ≤ 0.05% | Sebaka se bokellaneng ≤ 3% |
| Ho kenyeletsoa ha Khabone e Bonahalang | Sebaka se bokellaneng ≤ 0.05% | Sebaka se bokellaneng ≤ 5% |
| Ho ngoatheloa ha bokaholimo ba Silicon ke Leseli le Matla a Phahameng | Bolelele bo bokellaneng ≤ bophara ba wafer e le 1 | |
| Li-chips tsa Edge ka Leseli le Phahameng la Matla | Ha ho letho le dumelletsweng bophara le botebo ba ≥ 0.2 mm | 7 e lumelletsoe, ≤ 1 mm ka 'ngoe |
| Ho Sefahla Sekere sa Khoele | < 500 cm³ | < 500 cm³ |
| Tšilafalo ea Bokaholimo ba Silicon ke Leseli le Matla a Phahameng | ||
| Sephutheloana | Cassette ea wafer e nang le li-multi-wafer kapa setshelo se le seng sa wafer | Cassette ea wafer e nang le li-multi-wafer kapa setshelo se le seng sa wafer |
Tlhaloso ea wafer ea SiC ea mofuta oa 8inch 4H-N | ||
| Thepa | Kereiti ea Tlhahiso ea Lefela la MPD (Kereiti ea Z) | Kereiti ea Dummy (Kereiti ea D) |
| Sehlopha | Kereiti ea Tlhahiso ea Lefela la MPD (Kereiti ea Z) | Kereiti ea Dummy (Kereiti ea D) |
| Bophara | 199.5 mm – 200.0 mm | 199.5 mm – 200.0 mm |
| Mofuta oa poly | 4H | 4H |
| Botenya | 500 µm ± 25 µm | 500 µm ± 25 µm |
| Boikutlo ba Wafer | 4.0° ho ea ho <110> ± 0.5° | 4.0° ho ea ho <110> ± 0.5° |
| Botebo ba Micropipe | ≤ 0.2 cm² | ≤ 5 cm² |
| Ho hanyetsa | 0.015 – 0.025 Ω·cm | 0.015 – 0.028 Ω·cm |
| Boikutlo bo Hlomphehang | ||
| Ho se kenyeletsoe ha Moeli | 3 mm | 3 mm |
| LTV/TIV / Seqha / Koba | ≤ 5 µm / ≤ 15 µm / ≤ 35 µm / 70 µm | ≤ 5 µm / ≤ 15 µm / ≤ 35 µm / 100 µm |
| Ho ba le makukuno | Ra ea Poland ≤ 1 nm | Ra ea Poland ≤ 1 nm |
| CMP Ra | ≤ 0.2 nm | ≤ 0.5 nm |
| Mapetso a Moeli ka Leseli le Matla a Phahameng | Bolelele bo bokellaneng ≤ 20 mm bolelele bo le bong ≤ 2 mm | Bolelele bo bokellaneng ≤ 20 mm bolelele bo le bong ≤ 2 mm |
| Lipoleiti tsa Hex ka Leseli le Phahameng la Matla | Sebaka se bokellaneng ≤ 0.05% | Sebaka se bokellaneng ≤ 0.1% |
| Libaka tsa Polytype ka Leseli le Matla a Phahameng | Sebaka se bokellaneng ≤ 0.05% | Sebaka se bokellaneng ≤ 3% |
| Ho kenyeletsoa ha Khabone e Bonahalang | Sebaka se bokellaneng ≤ 0.05% | Sebaka se bokellaneng ≤ 5% |
| Ho ngoatheloa ha bokaholimo ba Silicon ke Leseli le Matla a Phahameng | Bolelele bo bokellaneng ≤ bophara ba wafer e le 1 | |
| Li-chips tsa Edge ka Leseli le Phahameng la Matla | Ha ho letho le dumelletsweng bophara le botebo ba ≥ 0.2 mm | 7 e lumelletsoe, ≤ 1 mm ka 'ngoe |
| Ho Sefahla Sekere sa Khoele | < 500 cm³ | < 500 cm³ |
| Tšilafalo ea Bokaholimo ba Silicon ke Leseli le Matla a Phahameng | ||
| Sephutheloana | Cassette ea wafer e nang le li-multi-wafer kapa setshelo se le seng sa wafer | Cassette ea wafer e nang le li-multi-wafer kapa setshelo se le seng sa wafer |
Tlhaloso ea substrate ea 6Inch 4H-semi SiC | ||
| Thepa | Kereiti ea Tlhahiso ea Lefela la MPD (Kereiti ea Z) | Kereiti ea Dummy (Kereiti ea D) |
| Bophara (mm) | 145 mm – 150 mm | 145 mm – 150 mm |
| Mofuta oa poly | 4H | 4H |
| Botenya (um) | 500 ± 15 | 500 ± 25 |
| Boikutlo ba Wafer | Mothating: ± 0.0001° | Mothating: ± 0.05° |
| Botebo ba Micropipe | ≤ 15 cm-2 | ≤ 15 cm-2 |
| Ho hanyetsa (Ωcm) | ≥ 10E3 | ≥ 10E3 |
| Boikutlo ba Motheo bo bataletseng | (0-10)° ± 5.0° | (10-10)° ± 5.0° |
| Bolelele ba Sephara ba Motheo | Notch | Notch |
| Ho se kenyeletsoe ha Moeli (mm) | ≤ 2.5 µm / ≤ 15 µm | ≤ 5.5 µm / ≤ 35 µm |
| LTV / Sekotlolo / Sekotlolo | ≤ 3 µm | ≤ 3 µm |
| Ho ba le makukuno | Ra ea Poland ≤ 1.5 µm | Ra ea Poland ≤ 1.5 µm |
| Li-chips tsa Edge ka Leseli le Phahameng la Matla | ≤ 20 µm | ≤ 60 µm |
| Lipoleiti tsa Mocheso ka Leseli le Phahameng la Matla | Kakaretso ≤ 0.05% | Kakaretso ≤ 3% |
| Libaka tsa Polytype ka Leseli le Matla a Phahameng | Ho kenyeletsoa ha Khabone e Bonahalang ≤ 0.05% | Kakaretso ≤ 3% |
| Ho ngoatheloa ha bokaholimo ba Silicon ke Leseli le Matla a Phahameng | ≤ 0.05% | Kakaretso ≤ 4% |
| Li-chips tsa Edge ka Leseli le Phahameng la Matla (Boholo) | Ha ea Lumelloa > 02 mm Bophara le Botebo | Ha ea Lumelloa > 02 mm Bophara le Botebo |
| Ho Atoloha ha Sekerefo sa Thuso | ≤ 500 µm | ≤ 500 µm |
| Tšilafalo ea Bokaholimo ba Silicon ke Leseli le Matla a Phahameng | ≤ 1 x 10^5 | ≤ 1 x 10^5 |
| Sephutheloana | Cassette ea wafer e nang le li-wafer tse ngata kapa setshelo se le seng sa wafer | Cassette ea wafer e nang le li-wafer tse ngata kapa setshelo se le seng sa wafer |
Tlhaloso ea Substrate ea SiC ea 4-Inch 4H-Semi Insulating
| Paramethara | Kereiti ea Tlhahiso ea Lefela la MPD (Kereiti ea Z) | Kereiti ea Dummy (Kereiti ea D) |
|---|---|---|
| Matlotlo a 'Mele | ||
| Bophara | 99.5 mm – 100.0 mm | 99.5 mm – 100.0 mm |
| Mofuta oa poly | 4H | 4H |
| Botenya | 500 μm ± 15 μm | 500 μm ± 25 μm |
| Boikutlo ba Wafer | Mothating: <600h > 0.5° | Mothating: <000h > 0.5° |
| Matlo a Motlakase | ||
| Boima ba Micropipe (MPD) | ≤1 cm⁻² | ≤15 cm⁻² |
| Ho hanyetsa | ≥150 Ω·cm | ≥1.5 Ω·cm |
| Mamello ea Jiometri | ||
| Boikutlo ba Motheo bo bataletseng | (0×10) ± 5.0° | (0×10) ± 5.0° |
| Bolelele ba Sephara ba Motheo | 52.5 mm ± 2.0 mm | 52.5 mm ± 2.0 mm |
| Bolelele ba Bobedi bo Sephara | 18.0 mm ± 2.0 mm | 18.0 mm ± 2.0 mm |
| Boikutlo bo Bobedi bo bataletseng | 90° CW ho tloha Prime flat ± 5.0° (Si e shebile holimo) | 90° CW ho tloha Prime flat ± 5.0° (Si e shebile holimo) |
| Ho se kenyeletsoe ha Moeli | 3 mm | 3 mm |
| LTV / TTV / Seqha / Koba | ≤2.5 μm / ≤5 μm / ≤15 μm / ≤30 μm | ≤10 μm / ≤15 μm / ≤25 μm / ≤40 μm |
| Boleng ba Bokaholimo | ||
| Bokgopo ba Bokaholimo (Polish Ra) | ≤1 nm | ≤1 nm |
| Bokgopo ba Bokaholimo (CMP Ra) | ≤0.2 nm | ≤0.2 nm |
| Mapetso a Moeli (Leseli le Matla a Phahameng) | Ha ea lumelloa | Bolelele bo bokellaneng ≥10 mm, lepetso le le leng ≤2 mm |
| Liphoso tsa Poleiti ea Hexagonal | Sebaka se kopaneng sa ≤0.05% | Sebaka se kopaneng sa ≤0.1% |
| Libaka tsa ho Kenyelletsoa ha Mefuta e Mengata | Ha ea lumelloa | Sebaka se kopaneng sa ≤1% |
| Ho kenyeletsoa ha Khabone e Bonahalang | Sebaka se kopaneng sa ≤0.05% | Sebaka se kopaneng sa ≤1% |
| Mekhabiso ea Silicon Surface | Ha ea lumelloa | Bolelele ba kakaretso ba bophara ba wafer bo ≤1 |
| Li-chips tsa Edge | Ha ho letho le dumelletsweng (bophara/botebo ba ≥0.2 mm) | ≤5 ditshipi (ka 'ngoe ≤1 mm) |
| Tšilafalo ea Bokaholimo ba Silicon | Ha ea hlalosoa | Ha ea hlalosoa |
| Sephutheloana | ||
| Sephutheloana | Khasete ea wafer e nang le wafer e ngata kapa setshelo sa wafer e le 'ngoe | Khasete ea li-wafer tse ngata kapa |
| Tlhaloso ea axial ea epit ea mofuta oa N ea lisenthimithara tse 6 | |||
| Paramethara | yuniti | Z-MOS | |
| Mofuta | Motlakase / Dopant | - | Mofuta oa N / Naetrojene |
| Lera la Buffer | Botenya ba Lera la Buffer | um | 1 |
| Mamello ea Botenya ba Lera la Buffer | % | ± 20% | |
| Ho tsepamisa maikutlo ha lera la buffer | cm-3 | 1.00E+18 | |
| Mamello ea ho Tšoenyeha ha Lera la Buffer | % | ± 20% | |
| Lera la 1 la Epi | Botenya ba Lera la Epi | um | 11.5 |
| Botenya ba Lera la Epi Ho tšoana | % | ± 4% | |
| Mamello ea Botenya ba Epi Layers ((Spec- Boholo ，Bonyane)/Tlhahlobo) | % | ± 5% | |
| Ho tsepamisa maikutlo ha Epi Layer | cm-3 | 1E 15~ 1E 18 | |
| Mamello ea Mahloriso a Epi Layer | % | 6% | |
| Ho tšoana ha mahloriso a Epi Layer (σ /e mahareng) | % | ≤5% | |
| Ho Tšoana ha Mahloriso a Epi Layer <(boholo-motsotso)/(boholo+motsotso> | % | ≤ 10% | |
| Sebopeho sa Wafer sa Epitaixal | Seqha | um | ≤±20 |
| WARP | um | ≤30 | |
| TTV | um | ≤ 10 | |
| LTV | um | ≤2 | |
| Litšobotsi tse Akaretsang | Bolelele ba ho ngoapa | mm | ≤30mm |
| Li-chips tsa Edge | - | HA HO LE E 'NGOE | |
| Tlhaloso ea liphoso | ≥97% (E lekantsoe ka 2*2, Liphoso tsa babolai li kenyelletsa: Liphoso li kenyelletsa Liphaephe tse nyenyane/Likoti tse kholo, Carrot, Likhutlotharo | ||
| Tšilafalo ea tšepe | liathomo/cm² | d f f ll i ≤5E10 liathomo/cm2 (Al, Cr, Fe, Ni, Cu, Zn, Hg,Na,K,Ti,Ca &Mn) | |
| Sephutheloana | Litlhaloso tsa ho paka | likhomphutha/lebokose | khasete ea wafer e nang le wafer e ngata kapa setshelo se le seng sa wafer |
| Tlhaloso ea epitaxial ea mofuta oa N ea lisenthimithara tse 8 | |||
| Paramethara | yuniti | Z-MOS | |
| Mofuta | Motlakase / Dopant | - | Mofuta oa N / Naetrojene |
| Lera la buffer | Botenya ba Lera la Buffer | um | 1 |
| Mamello ea Botenya ba Lera la Buffer | % | ± 20% | |
| Ho tsepamisa maikutlo ha lera la buffer | cm-3 | 1.00E+18 | |
| Mamello ea ho Tšoenyeha ha Lera la Buffer | % | ± 20% | |
| Lera la 1 la Epi | Karolelano ea Botenya ba Li-Epi Layers | um | 8 ~ 12 |
| Botenya ba Epi Layers Ho tšoana (σ/karolelano) | % | ≤2.0 | |
| Mamello ea Botenya ba Epi Layers ((Spec -Max, Min)/Spec) | % | ±6 | |
| Karolelano ea Doping ea Nete ea Epi Layers | cm-3 | 8E+15 ~2E+16 | |
| Ho tšoana ha Net Doping ea Epi Layers (σ/karolelano) | % | ≤5 | |
| Mamello ea ho sebelisa lithethefatsi tsa Epi Layers ((Spec -Max，) | % | ± 10.0 | |
| Sebopeho sa Wafer sa Epitaixal | Mi )/S ) Koahela | um | ≤50.0 |
| Seqha | um | ± 30.0 | |
| TTV | um | ≤ 10.0 | |
| LTV | um | ≤4.0 (10mm × 10mm) | |
| Kakaretso Litšobotsi | Mengoapo | - | Bolelele bo bokellaneng≤ 1/2 bophara ba Wafer |
| Li-chips tsa Edge | - | ≤2 ditshipi, radius ka 'ngoe ≤1.5mm | |
| Tšilafalo ea Tšepe tse ka Holimo | liathomo/cm2 | ≤5E10 liathomo/cm2 (Al, Cr, Fe, Ni, Cu, Zn, Hg,Na,K,Ti,Ca &Mn) | |
| Tlhahlobo e Phethahetseng ea Sekoli | % | ≥ 96.0 (Liphoso tsa 2X2 li kenyelletsa Micropipe / Likoti tse Kholo, Carrot, Liphoso tse khutlotharo, Litšitiso, Linear/IGSF-s, BPD) | |
| Tšilafalo ea Tšepe tse ka Holimo | liathomo/cm2 | ≤5E10 liathomo/cm2 (Al, Cr, Fe, Ni, Cu, Zn, Hg,Na,K,Ti,Ca &Mn) | |
| Sephutheloana | Litlhaloso tsa ho paka | - | khasete ea wafer e nang le wafer e ngata kapa setshelo se le seng sa wafer |
P1: Melemo ea bohlokoa ea ho sebelisa li-wafer tsa SiC ho feta li-wafer tsa silicon tsa setso ka har'a lisebelisoa tsa motlakase ke efe?
A1:
Li-wafer tsa SiC li fana ka melemo e 'maloa ea bohlokoa ho feta li-wafer tsa silicon (Si) tsa setso ka lisebelisoa tsa elektroniki tse sebetsang ka motlakase, ho kenyeletsoa:
Bokgoni bo Phahameng: SiC e na le lekhalo le pharaletseng la bandgap (3.26 eV) ha e bapisoa le silicon (1.1 eV), e lumellang lisebelisoa ho sebetsa ka li-voltage tse phahameng, maqhubu le mocheso. Sena se lebisa tahlehelong e tlase ea matla le katleho e phahameng litsamaisong tsa phetoho ea matla.
Ho khanna ho Phahameng ha Thermal: Ho tsamaisa mocheso ha SiC ho phahame haholo ho feta ha silicon, e leng se nolofalletsang ho qhala ha mocheso hamolemo lits'ebetsong tsa matla a maholo, e leng se ntlafatsang ts'epo le bophelo ba lisebelisoa tsa motlakase.
Ho Sebetsana le Voltage e Phahameng le Hona Joale: Lisebelisoa tsa SiC li ka sebetsana le maemo a phahameng a motlakase le a hona joale, e leng se etsang hore li lokele lits'ebetso tse nang le matla a maholo joalo ka likoloi tsa motlakase, litsamaiso tsa matla a nchafatsoang, le li-drive tsa liindasteri.
Lebelo la ho Fetola ka Potlako: Disebediswa tsa SiC di na le bokgoni ba ho fetola ka potlako, e leng se thusang ho fokotsa tahlehelo ya matla le boholo ba sistimi, e leng se etsang hore di be ntle bakeng sa ditshebediso tse sebetsang maqhubu a phahameng.
P2: Ke ditshebediso dife tse ka sehloohong tsa di-wafer tsa SiC indastering ya dikoloi?
A2:
Indastering ea likoloi, li-wafer tsa SiC li sebelisoa haholo-holo ho:
Literene tsa motlakase tsa likoloi tsa motlakase (EV)Likarolo tse thehiloeng ho SiC joalo kali-inverterleli-MOSFET tsa matlantlafatsa bokgoni le tshebetso ya di-powertrain tsa dikoloi tsa motlakase ka ho nolofalletsa lebelo le potlakileng la ho chencha le boima bo phahameng ba matla. Sena se lebisa bophelong bo bolelele ba betri le tshebetso e ntlafetseng ka kakaretso ya koloi.
Litjhaja tse ka Boema-fofaneng: Disebediswa tsa SiC di thusa ho ntlafatsa bokgoni ba ditsamaiso tsa ho tjhaja ka hara sekepe ka ho nolofalletsa dinako tse potlakileng tsa ho tjhaja le taolo e betere ya mocheso, e leng ntho ya bohlokwa bakeng sa di-EV ho tshehetsa diteishene tsa ho tjhaja tse nang le matla a maholo.
Mekhoa ea Taolo ea Libetri (BMS)Theknoloji ea SiC e ntlafatsa bokhoni balitsamaiso tsa taolo ea betri, e lumellang taolo e betere ea motlakase, ts'ebetso e phahameng ea matla, le bophelo bo bolelele ba betri.
Li-converter tsa DC-DC: Li-wafer tsa SiC li sebelisoa hoLi-converter tsa DC-DCho fetolela matla a DC a nang le motlakase o phahameng ho ba matla a DC a nang le motlakase o tlase ka katleho e kholoanyane, e leng ntho ea bohlokoa likoloing tsa motlakase ho laola matla ho tloha betring ho ea likarolong tse fapaneng ka koloing.
Tshebetso e phahameng ya SiC ditshebedisong tsa motlakase o phahameng, mocheso o phahameng, le bokgoni bo phahameng e etsa hore e be bohlokwa bakeng sa phetoho ya indasteri ya dikoloi ho ya ho motsamao wa motlakase.
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