SiC Substrate SiC Epi-wafer conductive/semi mofuta 4 6 8 inch

SiC Substrate SiC Epi-wafer conductive/semi type 4 6 8 inch Image Featured

Tlhaloso e Khutšoanyane:

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SiC Substrate SiC Epi-wafer Brief

Re fana ka pokello e felletseng ea li-substrates tsa SiC tsa boleng bo holimo le li-wafer tsa sic ka li-polytypes tse ngata le li-doping profiles-ho kenyeletsoa 4H-N (n-type conductive), 4H-P (p-type conductive), 4H-HPSI (high-purity semi-insulating), le 6H-P (p-type conductive) - 4 ″ conductive) ″ 6 ″ kaofela, 6″ ″ 4 ho fihlela ho 12 ″. Ka holim'a li-substrates tse se nang letho, litšebeletso tsa rona tsa kholo ea epi wafer li fana ka li-wafers tsa epitaxial (epi) tse nang le botenya bo laoloang ka thata (1-20 µm), likhahla tsa doping, le ho teteana ha bokooa.

Mohala o mong le o mong oa sic le epi wafer o hlahlojoa ka har'a mohala (micropipe density <0.1 cm⁻², bokaholimo ba Ra <0.2 nm) le sebopeho se felletseng sa motlakase (CV, 'mapa oa resistivity) ho netefatsa ts'ebetso e ts'oanang ea kristale. Ebang e sebelisetsoa li-module tsa motlakase oa motlakase, li-amplifiers tsa RF tse phahameng-frequency, kapa lisebelisoa tsa optoelectronic (LED, photodetectors), substrate ea rona ea SiC le mehala ea sehlahisoa sa epi e fana ka ts'epo, botsitso ba mocheso, le matla a ho senyeha a hlokoang ke lits'ebetso tsa kajeno tse boima haholo.

Mefuta le ts'ebeliso ea SiC Substrate 4H-N

4H-N SiC substrate Polytype (Hexagonal) Sebopeho

Wide bandgap ea ~ 3.26 eV e netefatsa ts'ebetso e tsitsitseng ea motlakase le matla a mocheso tlas'a maemo a phahameng a mocheso le mocheso o phahameng oa motlakase.

SiC substrateDoping ea mofuta oa N

Doping ea naetrojene e laoloang ka nepo e fana ka likhahla ho tloha ho 1×10¹⁶ ho isa ho 1×10¹⁹ cm⁻³ le lisebelisoa tsa elektronike tsa mocheso oa kamore ho fihla ho ~900 cm²/V·s, ho fokotsa tahlehelo ea conduction.

SiC substrateWide Resistivity & Uniformity

Botenya bo teng ba 0.01–10 Ω·cm le botenya ba wafer ba 350–650 µm bo nang le ±5% ea ho mamella li-doping le botenya—e loketseng ho etsoa ha lisebelisoa tse matla haholo.

SiC substrateTekanyo e tlase ea Sekoli

Boima ba micropipe <0.1 cm⁻² le density ea basal-plane dislocation < 500 cm⁻², ho fana ka > 99% ea tlhahiso ea lisebelisoa le botšepehi bo phahameng ba kristale.

SiC substrateE ikhethang Thermal Conductivity

Thermal conductivity ho fihla ho ~ 370 W/m·K e thusa ho tlosa mocheso hantle, ho matlafatsa ts'epehi ea sesebelisoa le ho teteka ha matla.

SiC substrateLikopo tse reriloeng

Li-SiC MOSFET, li-schottky diode, li-module tsa motlakase le lisebelisoa tsa RF bakeng sa li-drive tsa likoloi tsa motlakase, li-inverters tsa letsatsi, li-drive tsa indasteri, li-traction systems, le limmaraka tse ling tse boima tsa motlakase.

Litlhaloso tsa mofuta oa 6inch 4H-N oa SiC
Thepa	Kereiti ea Tlhahiso ea Zero MPD (Mophato oa Z)	Sehlopha sa Dummy (D Grade)
Kereiti	Kereiti ea Tlhahiso ea Zero MPD (Mophato oa Z)	Sehlopha sa Dummy (D Grade)
Diameter	149.5 limilimithara - 150.0 limilimithara	149.5 limilimithara - 150.0 limilimithara
Mofuta oa poly	4H	4H
Botenya	350 µm ± 15 µm	350 µm ± 25 µm
Wafer Orientation	Off axis: 4.0° ho leba <1120> ± 0.5°	Off axis: 4.0° ho leba <1120> ± 0.5°
Boima ba Micropipe	≤ 0.2 cm²	≤ 15 cm²
Ho hanyetsa	0.015 - 0.024 Ω·cm	0.015 - 0.028 Ω·cm
Maemo a Motheo a Flat	[10-10] ± 50°	[10-10] ± 50°
Bolelele ba Phatlalatso ba Pele	475 limilimithara ± 2.0 limilimithara	475 limilimithara ± 2.0 limilimithara
Kenyelletso ea Edge	3 limilimithara	3 limilimithara
LTV/TIV / Bow / Warp	≤ 2.5 µm / ≤ 6 µm / ≤ 25 µm / ≤ 35 µm	≤ 5 µm / ≤ 15 µm / ≤ 40 µm / ≤ 60 µm
Boqhobane	Polish Ra ≤ 1 nm	Polish Ra ≤ 1 nm
CMP Ra	≤ 0.2 nm	≤ 0.5 nm
Edge Cracks By High Intensity Leseli	Bolelele bo akaretsang ≤ 20 mm bolelele bo le bong ≤ 2 mm	Bolelele bo akaretsang ≤ 20 mm bolelele bo le bong ≤ 2 mm
Hex Plates By High Intensity Light	Sebaka sa pokello ≤ 0.05%	Sebaka sa pokello ≤ 0.1%
Libaka tsa Polytype Ka Leseli le Matla a Phahameng	Sebaka sa pokello ≤ 0.05%	Kakaretso ≤ 3%
Likakaretso tsa Carbon tse bonoang	Sebaka sa pokello ≤ 0.05%	Kakaretso ≤ 5%
Silicon Surface Scratches By High Intensity Light		Kakaretso ea bolelele ≤ 1 wafer bophara
Edge Chips Ka Leseli le Matla a Phahameng	Ha e lumelloe ≥ 0.2 mm bophara le botebo	7 e lumelletsoe, ≤ 1 mm ka 'ngoe
Ho kheloha ha Screw Dislocation	<500cm³	<500cm³
Tšilafalo ea Sefahleho sa Silicon Ka Leseli le Matla a Phahameng
Sephutheloana	Multi-wafer Cassette Kapa Single Wafer Container	Multi-wafer Cassette Kapa Single Wafer Container

Litlhaloso tsa mofuta oa 8inch 4H-N oa SiC
Thepa	Kereiti ea Tlhahiso ea Zero MPD (Mophato oa Z)	Sehlopha sa Dummy (D Grade)
Kereiti	Kereiti ea Tlhahiso ea Zero MPD (Mophato oa Z)	Sehlopha sa Dummy (D Grade)
Diameter	199.5 limilimithara - 200.0 limilimithara	199.5 limilimithara - 200.0 limilimithara
Mofuta oa poly	4H	4H
Botenya	500 µm ± 25 µm	500 µm ± 25 µm
Wafer Orientation	4.0° ho leba <110> ± 0.5°	4.0° ho leba <110> ± 0.5°
Boima ba Micropipe	≤ 0.2 cm²	≤ 5 cm²
Ho hanyetsa	0.015 - 0.025 Ω·cm	0.015 - 0.028 Ω·cm
Noble Orientation
Kenyelletso ea Edge	3 limilimithara	3 limilimithara
LTV/TIV / Bow / Warp	≤ 5 µm / ≤ 15 µm / ≤ 35 µm / 70 µm	≤ 5 µm / ≤ 15 µm / ≤ 35 µm / 100 µm
Boqhobane	Polish Ra ≤ 1 nm	Polish Ra ≤ 1 nm
CMP Ra	≤ 0.2 nm	≤ 0.5 nm
Edge Cracks By High Intensity Leseli	Bolelele bo akaretsang ≤ 20 mm bolelele bo le bong ≤ 2 mm	Bolelele bo akaretsang ≤ 20 mm bolelele bo le bong ≤ 2 mm
Hex Plates By High Intensity Light	Sebaka sa pokello ≤ 0.05%	Sebaka sa pokello ≤ 0.1%
Libaka tsa Polytype Ka Leseli le Matla a Phahameng	Sebaka sa pokello ≤ 0.05%	Kakaretso ≤ 3%
Likakaretso tsa Carbon tse bonoang	Sebaka sa pokello ≤ 0.05%	Kakaretso ≤ 5%
Silicon Surface Scratches By High Intensity Light		Kakaretso ea bolelele ≤ 1 wafer bophara
Edge Chips Ka Leseli le Matla a Phahameng	Ha e lumelloe ≥ 0.2 mm bophara le botebo	7 e lumelletsoe, ≤ 1 mm ka 'ngoe
Ho kheloha ha Screw Dislocation	<500cm³	<500cm³
Tšilafalo ea Sefahleho sa Silicon Ka Leseli le Matla a Phahameng
Sephutheloana	Multi-wafer Cassette Kapa Single Wafer Container	Multi-wafer Cassette Kapa Single Wafer Container

4H-SiC ke lisebelisoa tse sebetsang hantle tse sebelisoang bakeng sa lisebelisoa tsa motlakase tsa motlakase, lisebelisoa tsa RF, le lisebelisoa tsa mocheso o phahameng. "4H" e bolela sebopeho sa kristale, se nang le mahlakore a mabeli, 'me "N" e bontša mofuta oa doping o sebelisoang ho ntlafatsa ts'ebetso ea thepa.

The4H-SiCMofuta ona o sebelisoa hangata bakeng sa:

Motlakase oa Motlakase:E sebelisoa ho lisebelisoa tse kang diode, MOSFETs, le IGBTs bakeng sa likoloi tsa motlakase tsa motlakase, mechine ea indasteri, le lisebelisoa tsa matla a tsosolositsoeng.
Theknoloji ea 5G:Ka tlhokahalo ea 5G ea likarolo tse phahameng le tse sebetsang hantle haholo, bokhoni ba SiC ba ho sebetsana le maqhubu a phahameng le ho sebetsa ka mocheso o phahameng o etsa hore e be e loketseng bakeng sa li-amplifiers tsa setsi sa setsi le lisebelisoa tsa RF.
Sistimi ea Matla a Letsatsi:Lisebelisoa tse ntle tsa SiC tsa ho sebetsana le matla li loketse li-inverters le li-converter tsa photovoltaic (matla a letsatsi).
Likoloi tsa Motlakase (EVs):SiC e sebelisoa haholo ho li-powertrains tsa EV bakeng sa phetolo ea matla e sebetsang hantle haholoanyane, tlhahiso e tlase ea mocheso, le matla a phahameng a matla.

Mefuta le ts'ebeliso ea SiC Substrate 4H Semi-Insulating

Thepa:

Mekhoa ea ho laola boima ba 'mele ntle le micropipe: E netefatsa ho ba sieo ha li-micropipes, ho ntlafatsa boleng ba substrate.
Mekhoa ea ho laola monocrystalline: E netefatsa sebopeho se le seng sa kristale bakeng sa thepa e ntlafalitsoeng ea thepa.
Mekhoa ea ho laola li-inclusions: E fokotsa ho ba teng ha litšila kapa li-inclusions, ho netefatsa substrate e hloekileng.
Mekhoa ea ho laola ho hanyetsa: E lumella taolo e nepahetseng ea resistivity ea motlakase, e leng ea bohlokoa bakeng sa ts'ebetso ea sesebelisoa.
Mekhoa ea ho laola le ho laola litšila: E laola le ho fokotsa ho kenngoa ha litšila ho boloka botšepehi ba substrate.
Mekhoa ea ho laola bophara ba mehato ea substrate: E fana ka taolo e nepahetseng holim'a bophara ba mehato, ho netefatsa ho tsitsisa ho pholletsa le substrate

6Inch 4H-semi SiC substrate litlhaloso
Thepa	Kereiti ea Tlhahiso ea Zero MPD (Mophato oa Z)	Sehlopha sa Dummy (D Grade)
Diameter (mm)	145 limilimithara - 150 limilimithara	145 limilimithara - 150 limilimithara
Mofuta oa poly	4H	4H
Botenya (um)	500 ± 15	500 ± 25
Wafer Orientation	Ka lehlakoreng le leng: ±0.0001°	Ka lehlakoreng le leng: ±0.05°
Boima ba Micropipe	≤ 15 cm-2	≤ 15 cm-2
Ho hanyetsa (Ωcm)	≥ 10E3	≥ 10E3
Maemo a Motheo a Flat	(0-10)° ± 5.0°	(10-10)° ± 5.0°
Bolelele ba Phatlalatso ba Pele	Notch	Notch
Kenyelletso ea moeli (mm)	≤ 2.5 µm / ≤ 15 µm	≤ 5.5 µm / ≤ 35 µm
LTV / Bowl / Warp	≤3 µm	≤3 µm
Boqhobane	Polish Ra ≤ 1.5 µm	Polish Ra ≤ 1.5 µm
Edge Chips Ka Leseli le Matla a Phahameng	≤ 20 µm	≤ 60 µm
Lipoleiti Tsa Mocheso Ka Leseli le Matla a Phahameng	Kakaretso ≤ 0.05%	Kakaretso ≤ 3%
Libaka tsa Polytype Ka Leseli le Matla a Phahameng	Likakaretso tsa Carbon tse Bonahalang ≤ 0.05%	Kakaretso ≤ 3%
Silicon Surface Scratches By High Intensity Light	≤ 0.05%	Kakaretso ≤ 4%
Edge Chips Ka Leseli le Matla a Phahameng (Boholo)	Ha e lumelloe > 02 mm Bophara le Botebo	Ha e lumelloe > 02 mm Bophara le Botebo
The Aid Screw Dilation	≤ 500 µm	≤ 500 µm
Tšilafalo ea Sefahleho sa Silicon Ka Leseli le Matla a Phahameng	≤ 1 x 10^5	≤ 1 x 10^5
Sephutheloana	Multi-wafer Cassette kapa Single Wafer Container	Multi-wafer Cassette kapa Single Wafer Container

Tlhaloso ea 4-Inch 4H-Semi Insulating SiC Substrate

Paramethara	Kereiti ea Tlhahiso ea Zero MPD (Mophato oa Z)	Sehlopha sa Dummy (D Grade)
Lintho Tsa 'Mele
Diameter	99.5 limilimithara - 100.0 limilimithara	99.5 limilimithara - 100.0 limilimithara
Mofuta oa poly	4H	4H
Botenya	500 μm ± 15 μm	500 μm ± 25 μm
Wafer Orientation	Ka lehlakoreng le leng: <600h> 0.5°	Ka lehlakoreng le leng: <000h> 0.5°
Thepa ea Motlakase
Boima ba Micropipe (MPD)	≤1 cm⁻²	≤15 cm⁻²
Ho hanyetsa	≥150 Ω·cm	≥1.5 Ω·cm
Mamello ea Geometri
Maemo a Motheo a Flat	(0x10) ± 5.0°	(0x10) ± 5.0°
Bolelele ba Phatlalatso ba Pele	52.5 limilimithara ± 2.0 limilimithara	52.5 limilimithara ± 2.0 limilimithara
Bolelele ba Bokhabane ba Bobeli	18.0 limilimithara ± 2.0 limilimithara	18.0 limilimithara ± 2.0 limilimithara
Boemo ba Bobeli ba Flat	90 ° CW ho tloha Prime flat ± 5.0 ° (Si sefahleho holimo)	90 ° CW ho tloha Prime flat ± 5.0 ° (Si sefahleho holimo)
Kenyelletso ea Edge	3 limilimithara	3 limilimithara
LTV / TTV / Bow / Warp	≤2.5 μm / ≤5 μm / ≤15 μm / ≤30 μm	≤10 μm / ≤15 μm / ≤25 μm / ≤40 μm
Boleng ba Sefahleho
Bokhopo ba Bokahohle (Polish Ra)	≤1 nm	≤1 nm
Bokhopo ba Bokaholimo (CMP Ra)	≤0.2 nm	≤0.2 nm
Edge Cracks (Leseli le Phahameng ka ho Fetisisa)	Ha e lumelloe	Kakaretso bolelele ≥10 limilimithara, petso e le 'ngoe ≤2 limilimithara
Litšitiso tsa Letlapa la Hexagonal	≤0.05% sebaka sa pokello	≤0.1% sebaka sa pokello
Libaka tsa Kenyelletso ea Polytype	Ha e lumelloe	≤1% sebaka sa pokello
Likakaretso tsa Carbon tse bonoang	≤0.05% sebaka sa pokello	≤1% sebaka sa pokello
Silicon Surface Scratches	Ha e lumelloe	≤1 wafer bophara bo akaretsang bolelele
Li-Chips tsa Edge	Ha e lumelloe (≥0.2 mm bophara/botebo)	≤5 chips (e 'ngoe le e 'ngoe ≤1 mm)
Tšilafalo ea Silicon Surface	Ha ea hlalosoa	Ha ea hlalosoa
Sephutheloana
Sephutheloana	Multi-wafer cassette kapa single-wafer setshelo	Multi-wafer cassette kapa

Kopo:

TheSiC 4H Semi-Insulating substratesli sebelisoa haholo-holo lisebelisoa tsa elektronike tse matla le tse phahameng, haholo-holo hoSebaka sa RF. Li-substrates tsena li bohlokoa bakeng sa lits'ebetso tse fapaneng ho kenyeletsoamekhoa ea puisano ea microwave, radar e hlophisitsoeng ka mekhahlelo, lelisebelisoa tsa motlakase tse se nang mohala. Ts'ebetso ea bona e phahameng ea mocheso le litšoaneleho tse ntle tsa motlakase li li etsa hore e be tse loketseng bakeng sa lits'ebetso tse hlokahalang ho lisebelisoa tsa motlakase tsa motlakase le lits'ebetso tsa puisano.