LT Lithium Tantalate (LiTaO3) Crystal 2inch/3inch/4inch/6寸inch Orientaiton Y-42°/36°/108° Botenya 250-500um

Tlhaloso e Khutšoanyane:

Li-wafers tsa LiTaO₃ li emela sistimi ea bohlokoa ea lisebelisoa tsa piezoelectric le ferroelectric, e bonts'ang li-coezoelectric coefficients tse ikhethang, botsitso ba mocheso, le thepa ea optical, e leng se etsang hore e be tsa bohlokoa bakeng sa li-filters tsa maqhubu a holimo (SAW), li-resonator tsa bulk acoustic wave (BAW), li-optical modulators, le li-infrared. XKH e ikakhetse ka setotsoana ho R&D ea boleng bo holimo ea LiTaO₃ le tlhahiso, e sebelisa khōlo e tsoetseng pele ea kristale ea Czochralski (CZ) le lits'ebetso tsa mokelikeli oa epitaxy (LPE) ho netefatsa homogeneity e phahameng ea kristale e nang le sekoli <100/cm².

XKH e fana ka li-wafers tsa 3-inch, 4-inch, le 6-inch LiTaO₃ tse nang le mekhoa e mengata ea crystallographic (X-cut, Y-cut, Z-cut), e tšehetsang doping e hlophisitsoeng (Mg, Zn) le phekolo ea poling ho finyella litlhoko tse khethehileng tsa kopo. Dielectric constant (ε~ 40-50), piezoelectric coefficient (d₃₃~8-10 pC/N), le mocheso oa Curie (~ 600 ° C) li theha LiTaO₃ e le karolo e khethiloeng ea li-filters tsa maqhubu a phahameng le li-sensor tse nepahetseng.

Tlhahiso ea rona e kenyellelitsoeng ho ea holimo e akaretsa kholo ea kristale, ho belisoa, ho bentša le ho behoa ha lifilimi tse tšesaane, tse nang le bokhoni ba khoeli le khoeli ba tlhahiso e fetang 3,000 li-wafers ho sebeletsa likhokahano tsa 5G, lisebelisoa tsa elektroniki tsa bareki, li-photonics le liindasteri tsa ts'ireletso. Re fana ka tlhahlobo e felletseng ea botekgeniki, sebopeho sa mehlala, le lits'ebeletso tsa prototyping tse tlase ho fana ka tharollo e ntlafalitsoeng ea LiTaO₃.

Re romelle lengolo-tsoibila

Likaroloana

Litekanyetso tsa tekheniki

Lebitso	Optical-grade LiTaO3	Boemo ba tafole ea molumo LiTaO3
Axial	Z khaola + / - 0,2 °	36 ° Y sehiloeng / 42 ° Y sehiloeng / X sehiloeng(+ / - 0.2 °)
Diameter	76.2mm + / - 0.3mm/100±0.2mm	76.2mm + /-0.3mm100mm + /-0.3mm 0r 150±0.5mm
Sefofane sa Datum	22mm +/ - 2mm	22mm + /-2mm32mm + /-2mm
Botenya	500um + /-5mm1000um + /-5mm	500um + /-20mm350um + /-20mm
TTV	≤ 10um	≤ 10um
Mocheso oa curie	605 °C + / - 0.7 °C (Mokhoa oa DTA)	605 °C + / -3 °C (DTAmokgwa
Boleng ba bokaholimo	Ho bentša ka mahlakoreng a mabeli	Ho bentša ka mahlakoreng a mabeli
Mathoko a chamfered	ho pota-pota	ho pota-pota

Litšobotsi Tsa Sehlooho

1. Sebopeho sa Crystal le Ts'ebetso ea Motlakase

· Crystallographic Stability: 100% 4H-SiC polytype dominance, zero multicrystalline inclusions (mohlala, 6H / 15R), e nang le XRD rocking curve e tletseng bophara ba halofo-maximum (FWHM) ≤32.7 arcsec.
· High Carrier Mobility: Motsamao oa elektrone oa 5,400 cm²/V·s (4H-SiC) le motsamao oa masoba a 380 cm²/V·s, o nolofalletsang meralo ea lisebelisoa tsa maqhubu a holimo.
·Radiation Hardness: E mamella mabone a 1 MeV a neutron a nang le moeli oa ts'enyo ea phalliso ea 1×10¹⁵ n/cm², e loketseng sebaka sa sefofane le lisebelisoa tsa nyutlelie.

2.Thermal le Mechanical Properties

· Exceptional Thermal Conductivity: 4.9 W/cm·K (4H-SiC), tse tharo tsa silicon, ts'ebetso e tšehetsang ka holimo ho 200 ° C.
· Mocheso o Motla oa Katoloso ea Mocheso: CTE ea 4.0 × 10⁻⁶/K (25-1000 ° C), ho netefatsa ho lumellana le liphutheloana tse thehiloeng ka silicon le ho fokotsa khatello ea mocheso.

3.Defect Control le Processing Precision
.
· Boima ba Micropipe: <0.3 cm⁻² (li-wafers tse 8-inch), density deslocation <1,000 cm⁻² (e netefalitsoe ka KOH etching).
· Boleng ba Bokahohle: CMP e bentšitsoe ho Ra <0.2 nm, e finyella litlhoko tsa EUV lithography-grade flatness.

Lisebelisoa tsa Bohlokoa

Domain	Scenarios ea Kopo	Melemo ea Technical
Lipuisano tsa Optical	100G/400G lasers, silicon photonics hybrid modules	Li-substrates tsa peo ea InP li nolofalletsa sehlopha se otlolohileng (1.34 eV) le Si-based heteroepitaxy, ho fokotsa tahlehelo ea ho kopanya mahlo.
Likoloi tse Ncha tsa Matla	Li-inverters tse phahameng tsa 800V, li-charger tsa onboard (OBC)	Li-substrates tsa 4H-SiC li mamella> 1,200 V, li fokotsa tahlehelo ea conduction ka 50% le bophahamo ba tsamaiso ka 40%.
5G Communications	Lisebelisoa tsa RF tsa millimeter-wave (PA/LNA), li-amplifiers tsa motlakase tsa setsi sa motheo	Semi-insulating SiC substrates (resistivity >10⁵ Ω·cm) e thusa ho kopanya maqhubu a phahameng (60 GHz+).
Lisebelisoa tsa Indasteri	Li-sensor tsa mocheso o phahameng, li-transformer tsa hajoale, li-monitor tsa reactor ea nyutlelie	Li-substrates tsa peo ea InSb (0.17 eV bandgap) li fana ka maikutlo a khoheli ho fihla ho 300%@10 T.

LiTaO₃ Wafers - Litšobotsi tsa Bohlokoa

1. Ts'ebetso e phahameng ea Piezoelectric

· Li-coezoelectric coefficients tse phahameng (d₃₃~8-10 pC/N, K²~0.5%) li thusa lisebelisoa tsa SAW/BAW tsa maqhubu a phahameng tse nang le tahlehelo ea ho kenya <1.5dB bakeng sa lifilthara tsa 5G RF

* Khokahano e ntle ka ho fetesisa ea motlakase e ts'ehetsa meralo ea li-filter-bandwidth (≥5%) bakeng sa lits'ebetso tsa sub-6GHz le mmWave

2. Thepa ea Optical

* Ponaletso ea Broadband (> 70% phetisetso ho tloha 400-5000nm) bakeng sa li-modulators tsa electro-optic tse fihletseng> 40GHz bandwidth

· Ho ba le ts'oaetso e matla ea mahlo (χ⁽²⁾~30pm/V) e thusa ho hlahisa mofuta oa bobeli oa harmonic (SHG) lits'ebetsong tsa laser.

3. Botsitso ba Tikoloho

· Mocheso o phahameng oa Curie (600°C) o boloka karabo ea piezoelectric maemong a likoloi (-40°C ho isa ho 150°C)

· Ho se sebetse ha lik'hemik'hale khahlano le li-acids/alkalies (pH1-13) ho netefatsa ts'epahalo lits'ebetsong tsa sensor ea indasteri.

4. Customization bokgoni

Boenjineri ba tataiso: X-cut (51°), Y-cut (0°), Z-cut (36°) bakeng sa likarabo tse lokiselitsoeng tsa piezoelectric

Likhetho tsa doping: Mg-doped (ho hanyetsa tšenyo ea mahlo), Zn-doped (e ntlafalitsoeng d₃₃)

· Surface finishes: Epitaxial-ready polishing (Ra<0.5nm), ITO/Au metallization

LiTaO₃ Wafers - Lisebelisoa tsa mantlha

1. RF Front-End Modules

· Li-filters tsa 5G NR SAW (Sehlopha sa n77/n79) se nang le mocheso oa mocheso oa maqhubu (TCF) <|-15ppm/°C|

· Ultra-wideband BAW resonator bakeng sa WiFi 6E/7 (5.925-7.125GHz)

2. Lifoto tse Kopantsoeng

· Li-modulator tsa lebelo le holimo tsa Mach-Zehnder (> 100Gbps) bakeng sa likhokahano tse kopaneng tsa mahlo.

· Li-detectors tsa infrared tsa QWIP tse nang le cutoff wavelengths tse ka khonehang ho tloha ho 3-14μm

3. Lisebelisoa tsa Elektronike tsa Likoloi

* Li-sensor tsa ho paka tsa Ultrasonic tse nang le> 200kHz maqhubu a ts'ebetso

· Li-transducer tsa TPMS piezoelectric tse pholohang -40°C ho isa ho 125°C libaesekele tse futhumetseng

4. Mekhoa ea Tšireletso

· Lisefe tsa seamoheli sa EW tse nang le >60dB ntle le sehlopha se hanang

· Lifensetere tsa IR tse batlang Limissile tse fetisang mahlaseli a MWIR a 3-5μm

5. Emerging Technologies

· Optomechanical quantum transducer bakeng sa phetoho ea microwave-to-optical

· Litlhophiso tsa PMUT bakeng sa litšoantšo tsa ultrasound tsa bongaka (>20MHz resolution)

LiTaO₃ Wafers - XKH Services

1. Tsamaiso ea Phepelo

· Ho sebetsana le Boule-to-wafer ka nako ea ho etella pele ea libeke tse 4 bakeng sa litlhaloso tse tloaelehileng

· Tlhahiso e ntlafalitsoeng ka litšenyehelo e fana ka melemo ea 10-15% ho feta bahlolisani

2. Custom Solutions

· Sehlahisoa se ikhethileng: 36 ° ± 0.5 ° Y-cut bakeng sa ts'ebetso e nepahetseng ea SAW

· Liqapi tse entsoeng ka maiketsetso: MgO (5mol%) doping bakeng sa lisebelisoa tsa optical

Litšebeletso tsa tšepe: Cr/Au (100/1000Å) mohlala oa li-electrode

3. Tšehetso ea Theknoloji

· Sebopeho sa lintho tse bonahalang: XRD rocking curves (FWHM <0.01 °), tlhahlobo ea bokaholimo ba AFM

* Ketsiso ea sesebelisoa: Mohlala oa FEM bakeng sa ntlafatso ea moralo oa filthara ea SAW

Qetello

Li-wafers tsa LiTaO₃ li ntse li tsoela pele ho thusa tsoelo-pele ea theknoloji ho pholletsa le likhokahano tsa RF, li-photonics tse kopantsoeng, le li-sensor tse thata tsa tikoloho. Bokhoni ba thepa ea XKH, ho nepahala ha tlhahiso, le ts'ehetso ea boenjineri ba ts'ebeliso li thusa bareki ho hlola liphephetso tsa moralo litsamaisong tsa elektroniki tsa moloko o tlang.